公开(公告)号：US07948783B2

公开(公告)日：2011-05-24

申请号：US12515898

申请日：2007-11-12

申请人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura ,  Nobuyuki Ishiwata ,  Shuichi Tahara

发明人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura ,  Nobuyuki Ishiwata ,  Shuichi Tahara

IPC分类号： G11C15/02

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： An MRAM comprises: a plurality of magnetic memory cells each having a magnetoresistive element; and a magnetic field application section. The magnetic field application section applies an offset adjustment magnetic field in a certain direction to the plurality of magnetic memory cells from outside the plurality of magnetic memory cells. Respective data stored in the plurality of magnetic memory cells become the same when the offset adjustment magnetic field is removed.

摘要翻译： MRAM包括：多个具有磁阻元件的磁存储单元; 和磁场施加部。 磁场施加部从多个磁存储单元的外部向多个磁存储单元施加一定方向的偏移调整磁场。 当去除偏移调整磁场时，存储在多个磁存储单元中的各个数据变得相同。

公开(公告)号：US20110116306A1

公开(公告)日：2011-05-19

申请号：US13054577

申请日：2009-07-02

申请人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Norikazu Oshima ,  Nobuyuki Ishiwata

发明人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Norikazu Oshima ,  Nobuyuki Ishiwata

IPC分类号： G11C11/22 ,  H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/10

摘要： A domain wall motion type MRAM has: a magnetic recording layer 10 being a ferromagnetic layer having perpendicular magnetic anisotropy; a pair of current supply terminals 14a and 14b connected to the magnetic recording layer 10 for supplying a current to the magnetic recording layer 10; and an anti-ferromagnetic layer 45 being in contact with a first region R1 of the magnetic recording layer 10. The first region R1 includes a part of a current supply region RA of the magnetic recording layer 10 that is between the pair of current supply terminals 14a and 14b.

摘要翻译： 畴壁运动型MRAM具有：具有垂直磁各向异性的铁磁层的磁记录层10; 连接到用于向磁记录层10提供电流的磁记录层10的一对电流供给端子14a和14b; 以及与磁记录层10的第一区域R1接触的反铁磁层45.第一区域R1包括在一对电流供给端子之间的磁记录层10的电流供应区域RA的一部分 14a和14b。

公开(公告)号：US20100193890A1

公开(公告)日：2010-08-05

申请号：US12671012

申请日：2008-07-07

申请人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata

发明人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228

摘要： A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic recording layer includes: a magnetization switching area having reversible magnetization; a first magnetization pinned area connected to a first boundary of the magnetization switching area and having magnetization whose direction is pinned in a first direction; and a second magnetization pinned area connected to a second boundary of the magnetization switching area and having magnetization whose direction is pinned in a second direction. The magnetic reading layer includes: a magnetic sensing layer whose direction of magnetization changes based on a direction of the magnetization of the magnetization switching area; a nonmagnetic barrier layer provided on the magnetic sensing layer; and a pinned layer provided on the nonmagnetic barrier layer.

摘要翻译： 磁性随机存取存储器包括：包含铁磁层并具有垂直磁各向异性的磁记录层; 以及设置在磁记录层上并用于读取信息的磁读取层。 磁记录层包括：具有可逆磁化的磁化切换区域; 第一磁化固定区域，连接到磁化开关区域的第一边界并且具有方向被固定在第一方向上的磁化; 以及连接到所述磁化开关区域的第二边界并具有其方向被固定在第二方向上的磁化的第二磁化固定区域。 磁读取层包括：磁化方向的磁感应层根据磁化转换区域的磁化方向而变化; 设置在所述磁敏感层上的非磁性阻挡层; 以及设置在非磁性阻挡层上的钉扎层。

公开(公告)号：US07369375B2

公开(公告)日：2008-05-06

申请号：US11477411

申请日：2006-06-30

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A first magnetic layer is provided on the lower conductive layer. On the first magnetic layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

摘要翻译： 磁阻效应头设置有设置有凹部的下导电层，在凹部设置有垂直偏置层。 第一磁性层设置在下导电层上。 在第一磁性层上，按照以下顺序层叠非磁性层，固定层，固定层和上层，以便不被放置在垂直偏置层的正上方。 非磁性层，固定层，固定层和上层被埋在绝缘层中。 此外，在上层和绝缘层上设置有上导电层。 在由垂直偏置层施加的磁场的方向上，自由层的长度比固定层长，并且自由层设置在垂直偏置层附近，固定层和垂直偏置之间的距离 层保持不变。

公开(公告)号：US20080074799A1

公开(公告)日：2008-03-27

申请号：US11632387

申请日：2005-06-30

申请人： Nobuyuki Ishiwata

发明人： Nobuyuki Ishiwata

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/13 ,  H01F10/3204 ,  H01F10/3254 ,  H01F41/302 ,  H01L27/228 ,  H01L43/10

摘要： A magnetoresistance element includes an antiferromagnetic layer, a fixed ferromagnetic layer, a first nonmagnetic layer and a free ferromagnetic layer. The antiferromagnetic layer is formed on the upper surface side of a substrate. The fixed ferromagnetic layer is formed on the antiferromagnetic layer. The first nonmagnetic layer is formed on the fixed ferromagnetic layer. The free ferromagnetic layer is formed on the first nonmagnetic layer. The fixed ferromagnetic layer is provided with an amorphous layer. The amorphous layer contains amorphous material having a composition expressed by a chemical formula of X—Y-Z. X is an element selected from Co, Fe and Ni. Y is an element selected from Al, Si, Mg, Ta, Nb, Zr, Hf, W, Mo, Ti and V. Z is an element selected from N, C and B.

摘要翻译： 磁阻元件包括反铁磁层，固定铁磁层，第一非磁性层和自由铁磁层。 反铁磁性层形成在基板的上表面侧。 固定铁磁层形成在反铁磁层上。 第一非磁性层形成在固定的铁磁层上。 自由铁磁层形成在第一非磁性层上。 固定铁磁层设置有非晶层。 非晶层含有由化学式X-Y-Z表示的组成的无定形材料。 X是选自Co，Fe和Ni的元素。 Y是选自Al，Si，Mg，Ta，Nb，Zr，Hf，W，Mo，Ti和V.的元素.Z是选自N，C和B的元素。

公开(公告)号：US20070047158A1

公开(公告)日：2007-03-01

申请号：US11477411

申请日：2006-06-30

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

摘要翻译： 磁阻效应头设置有设置有凹部的下导电层，在凹部设置有垂直偏置层。 在下导电层上提供自由层。 在自由层上，按照以下顺序层叠非磁性层，固定层，固定层和上层，以便不被放置在垂直偏置层的正上方。 非磁性层，固定层，固定层和上层被埋在绝缘层中。 此外，在上层和绝缘层上设置有上导电层。 在由垂直偏置层施加的磁场的方向上，自由层的长度比固定层长，并且自由层设置在垂直偏置层附近，固定层与垂直偏置之间的距离 层保持不变。

公开(公告)号：US07085109B1

公开(公告)日：2006-08-01

申请号：US09532444

申请日：2000-03-23

申请人： Nobuyuki Ishiwata

发明人： Nobuyuki Ishiwata

IPC分类号： G11B5/127

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3929 ,  G11B5/4826

摘要： In a spin value type transducer including two magnetic shield layers, a patterned magnetoresistance element is in direct contact with one of the magnetic shield layers. A permanent magnet layer and an electrode layer are formed on the sides of the patterned magnetoresistance element.

公开(公告)号：US07079360B2

公开(公告)日：2006-07-18

申请号：US10835399

申请日：2004-04-30

申请人： Nobuyuki Ishiwata

发明人： Nobuyuki Ishiwata

IPC分类号： G11B5/33

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3929 ,  G11B5/4826

摘要： In a spin value type transducer including two magnetic shield layers, a patterned magnetoresistance element is in direct contact with one of the magnetic shield layers. A permanent magnet layer and an electrode layer are formed on the sides of the patterned magnetoresistance element.

摘要翻译： 在包括两个磁屏蔽层的自旋值型换能器中，图案化磁阻元件与磁屏蔽层之一直接接触。 在图案化磁阻元件的侧面上形成永磁体层和电极层。

公开(公告)号：US20060114608A1

公开(公告)日：2006-06-01

申请号：US11333897

申请日：2006-01-18

申请人： Shinsaku Saitho ,  Haruo Urai ,  Nobuyuki Ishiwata ,  Kiyotaka Shimabayashi ,  Yoshihiro Nonaka ,  Tamaki Toba

发明人： Shinsaku Saitho ,  Haruo Urai ,  Nobuyuki Ishiwata ,  Kiyotaka Shimabayashi ,  Yoshihiro Nonaka ,  Tamaki Toba

IPC分类号： G11B5/147

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/313

摘要： To accurately decrease the gap depth between an upper pole layer and a lower pole layer and the front-end portion width of the upper pole layer. A thin-film magnetic head of the present invention is constituted by forming a lower shielding layer, a read gap layer holding an MR magnetosensitive element, a common pole layer, and a write gap layer in order on an insulating substrate, forming a first flattening layer, a coil pattern layer, and a second flattening layer laminated in order on the write gap layer excluding the vicinity of an ABS plane, and forming an upper pole layer on the write gap layer and the second flattening layer nearby an ABS plane. Moreover, a concave portion is formed on the common pole layer at a position separated from the ABS plane, the concave portion is filled with a nonmagnetic body, and the gap depth between the upper pole layer and the common pole layer is determined by the concave portion.

公开(公告)号：US07054107B2

公开(公告)日：2006-05-30

申请号：US10375239

申请日：2003-02-27

申请人： Shinsaku Saitho ,  Haruo Urai ,  Nobuyuki Ishiwata ,  Kiyotaka Shimabayashi ,  Yoshihiro Nonaka ,  Tamaki Toba

发明人： Shinsaku Saitho ,  Haruo Urai ,  Nobuyuki Ishiwata ,  Kiyotaka Shimabayashi ,  Yoshihiro Nonaka ,  Tamaki Toba

IPC分类号： G11B5/147

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/313

摘要： To accurately decrease the gap depth between an upper pole layer and a lower pole layer and the front-end portion width of the upper pole layer.A thin-film magnetic head of the present invention is constituted by forming a lower shielding layer, a read gap layer holding an MR magnetosensitive element, a common pole layer, and a write gap layer in order on an insulating substrate, forming a first flattening layer, a coil pattern layer, and a second flattening layer laminated in order on the write gap layer excluding the vicinity of an ABS plane, and forming an upper pole layer on the write gap layer and the second flattening layer nearby an ABS plane. Moreover, a concave portion is formed on the common pole layer at a position separated from the ABS plane, the concave portion is filled with a nonmagnetic body, and the gap depth between the upper pole layer and the common pole layer is determined by the concave portion.

摘要翻译： 为了精确地减小上极层和下极层之间的间隙深度和上极层的前端部宽度。 本发明的薄膜磁头通过在绝缘基板上依次形成下屏蔽层，保持MR磁敏元件，公共极层和写间隙层的读取间隙层，形成第一扁平化 层，线圈图案层和在除了ABS平面附近的写入间隙层上顺序层叠的第二平坦化层，并且在ABS平面附近的写间隙层和第二平坦化层上形成上极层。 此外，在与ABS平面分离的位置处，在公共极层上形成凹部，凹部填充有非磁性体，上极层和公共极层之间的间隙深度由凹部 一部分。