公开(公告)号：US12119362B2

公开(公告)日：2024-10-15

申请号：US17185129

申请日：2021-02-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Sanshiro Shishido ,  Shinichi Machida ,  Takeyoshi Tokuhara ,  Katsuya Nozawa

IPC: H01L27/14 ,  G02B5/20 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/0384 ,  H01L27/142 ,  H01L31/0256

CPC classification number: H01L27/14625 ,  G02B5/208 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14667 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/03845 ,  H01L27/142 ,  H01L27/14643 ,  H01L2031/0344

Abstract: A light sensor includes a photoelectric conversion layer and a long-pass filter that is disposed above the photoelectric conversion layer. The photoelectric conversion layer has a spectral sensitivity characteristic having a first peak at a first wavelength that is longer than a cut-on wavelength of the long-pass filter, and a spectral sensitivity of the photoelectric conversion layer at the cut-on wavelength is greater than or equal to 0% and less than or equal to 50% of a spectral sensitivity of the photoelectric conversion layer at the first wavelength.

公开(公告)号：US12081878B2

公开(公告)日：2024-09-03

申请号：US18303285

申请日：2023-04-19

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Tsutomu Kobayashi ,  Kazuko Nishimura ,  Yasuo Miyake ,  Sanshiro Shishido

IPC: H04N23/76 ,  H04N23/55 ,  H04N23/72 ,  H04N23/75 ,  H04N25/50 ,  H10K39/32 ,  G02B5/20

CPC classification number: H04N23/76 ,  H04N23/72 ,  H04N23/75 ,  H04N25/50 ,  H10K39/32 ,  G02B5/205 ,  H04N23/55

Abstract: A camera system includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting incident light into electric charge; voltage application circuitry that supplies a first voltage and a second voltage less than the first voltage between the first electrode and the second electrode such that the first voltage is applied at least one time in a frame; and a controller that derives a total length of at least one period in which the first voltage is applied in the frame, the total length corresponding to an attenuation ratio set for the frame, and causes the voltage supply circuitry to supply the first voltage in the at least one period having the total length in the frame.

公开(公告)号：US11910625B2

公开(公告)日：2024-02-20

申请号：US17219954

申请日：2021-04-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Nozawa ,  Takeyoshi Tokuhara ,  Nozomu Matsukawa ,  Sanshiro Shishido

IPC: H10K39/32 ,  H04N5/33 ,  H04N25/709 ,  H10K30/30 ,  H10K10/29 ,  H10K30/20

CPC classification number: H10K39/32 ,  H04N5/33 ,  H04N25/709 ,  H10K10/29 ,  H10K30/211 ,  H10K30/30

Abstract: An imaging device includes a pixel electrode, a counter electrode that faces the pixel electrode, a first photoelectric conversion layer that is located between the pixel electrode and the counter electrode and that generates first signal charge, a second photoelectric conversion layer that is located between the first photoelectric conversion layer and the pixel electrode and that generates second signal charge, a first barrier layer that is located between the first photoelectric conversion layer and the second photoelectric conversion layer and that forms a first heterojunction barrier against the first signal charge in the first photoelectric conversion layer, and a charge accumulator that is electrically connected to the pixel electrode and that accumulates the first signal charge and the second signal charge.

公开(公告)号：US11646328B2

公开(公告)日：2023-05-09

申请号：US17039018

申请日：2020-09-30

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Kyosuke Kobinata ,  Sanshiro Shishido ,  Yoshihiro Sato

IPC: H01L27/146 ,  H01L31/0224 ,  H04N5/378 ,  H04N5/353 ,  H04N5/374 ,  H04N5/357

CPC classification number: H01L27/14605 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14665 ,  H01L31/022408 ,  H04N5/353 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378

Abstract: An imaging device including a semiconductor substrate; a first pixel including a first photoelectric converter configured to convert incident light into charge, and a first diffusion region in the semiconductor substrate, configured to electrically connected to the first photoelectric converter and a second pixel including a second photoelectric converter, configured to convert incident light into charge, and a second diffusion region in the semiconductor substrate, configured to electrically connected to the second photoelectric converter, wherein an area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, both the first diffusion region and the second diffusion region overlap with the first photoelectric converter in the plan view, and neither the first diffusion region nor the second diffusion region overlaps with the second photoelectric converter in the plan view.

公开(公告)号：US11563057B2

公开(公告)日：2023-01-24

申请号：US17083376

申请日：2020-10-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takeyoshi Tokuhara ,  Sanshiro Shishido ,  Yasuo Miyake ,  Shinichi Machida

IPC: H01L27/30 ,  H01L27/146

Abstract: An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 μm or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 μm or longer and shorter than 1.1 μm is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 μm or longer.

公开(公告)号：US11552115B2

公开(公告)日：2023-01-10

申请号：US16886621

申请日：2020-05-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Sanshiro Shishido ,  Masashi Murakami ,  Kazuko Nishimura

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/374 ,  H04N5/378 ,  H04N5/225

Abstract: An imaging device having a semiconductor substrate that includes a first photoelectric converter, and a second photoelectric converter adjacent to the first photoelectric converter. The imaging device further includes a capacitive element one end of which is coupled to the first photoelectric converter, where the first capacitive element at least partly overlaps, in a plan view, with the second photoelectric converter.

公开(公告)号：US11546521B2

公开(公告)日：2023-01-03

申请号：US17405501

申请日：2021-08-18

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshiaki Satou ,  Sanshiro Shishido ,  Yasuo Miyake ,  Kazuko Nishimura ,  Hiroshi Iwai ,  Osamu Shibata

IPC: H04N5/235 ,  H04N5/232 ,  H01L27/146 ,  G06T7/73

Abstract: A camera system including an imaging device that captures a first image by a normal exposure including only one exposure and that captures a second image by a multiple exposure including a plurality of exposures; and a control circuit. The the imaging device captures the second image in a first frame period, and the control circuit determines, based on the second image captured in the first frame period, whether to capture an image by the normal exposure or capture an image by the multiple exposure in a second frame period following the first frame period.

公开(公告)号：US11233965B2

公开(公告)日：2022-01-25

申请号：US16437975

申请日：2019-06-11

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Shinichi Machida ,  Takeyoshi Tokuhara ,  Manabu Nakata ,  Sanshiro Shishido ,  Masaaki Yanagida ,  Masumi Izuchi

IPC: H04N5/378 ,  H04N5/374 ,  H01L27/30 ,  H01L51/42 ,  H01L51/00

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

公开(公告)号：US10887539B2

公开(公告)日：2021-01-05

申请号：US16700957

申请日：2019-12-02

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Hidenari Kanehara ,  Yasuo Miyake ,  Sanshiro Shishido

IPC: H04N3/14 ,  H04N5/335 ,  H04N5/3745 ,  H04N5/374 ,  H04N5/376 ,  H01L27/146 ,  H04N5/378

Abstract: An imaging device includes: a first chip that includes pixels arranged in a row, the pixels including: a first pixel including a first photoelectric converter and a first transistor, having a first control terminal, coupled to the first photoelectric converter; and a second pixel including a second photoelectric converter and a second transistor, having a second control terminal, coupled to the second photoelectric converter; and a second chip including: a signal line extending along the row; a first buffer circuit having a first input terminal and a first output terminal, the first input terminal being coupled to the signal line, the first output terminal being coupled to the first control terminal; and a second buffer circuit having a second input terminal and a second output terminal, the second input terminal being coupled to the signal line, the second output terminal being coupled to the second control terminal.

公开(公告)号：US10735652B2

公开(公告)日：2020-08-04

申请号：US16439834

申请日：2019-06-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Manabu Nakata ,  Shinichi Machida ,  Takeyoshi Tokuhara ,  Sanshiro Shishido ,  Masaaki Yanagida ,  Masumi Izuchi

IPC: H04N5/232 ,  H04N5/235 ,  H04N9/07 ,  H04N5/33 ,  H04N9/04 ,  H01L27/30

Abstract: A method for controlling an imaging device having a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band, and that allows switching of an operation mode from the first mode to the second mode or from the second mode to the first mode. The method including causing the imaging device to perform imaging in the first mode or the second mode; determining, with a predetermined frequency or in response to a predetermined trigger, whether to maintain a current operation mode or switch the current operation mode on the basis of first image information in the first imaging wavelength band and second image information in the second imaging wavelength band; and in accordance with the determination, selectively maintaining the current operation mode or switching the current operation mode.