摘要:
A plasma sputter etching/deposition system comprising an electron-emitting hollow cathode arc-source combined with a conventional plasma sputter etching/deposition system such as a magnetron. The electrons emitted are coupled into the intrinsic high energy, e.g., magnetic field and are accelerated by the plasma potential and cause a significant increase plasma density. The resultant combination allows much greater sputtering/deposition efficiency than was possible with previous devices. According to a further aspect of the invention, switched operation is possible, whereby etching may vary from isotropic to anisotropic. A side discharge hollow cathode structure is also described for enhancing certain sputtering/deposition processes, wherein electrons may be emitted from one or more openings at the side of a hollow cathode chamber to achieve more uniform electron emission in a large process chamber.
摘要:
A technique for a nanodevice is provided that includes a reservoir filled with a conductive fluid and a membrane separating the reservoir. The membrane includes an electrode layer having a tunneling junction formed therein. A nanopore is formed through the membrane, and the nanopore is formed through other layers of the membrane such that the nanopore is aligned with the tunneling junction of the electrode layer. When a voltage is applied to the electrode layer, a tunneling current is generated by a base in the tunneling junction to be measured as a signature for distinguishing the base. When an organic coating is formed on an inside surface of the tunneling junction, transient bonds are formed between the electrode layer and the base.
摘要:
For a cross slit structure that contains a nanopore, a layer is produced including a first spacer that penetrates through the layer. A subsequent layer over, and in direct contact with, the layer is also produced. The subsequent layer includes a second spacer penetrating through the subsequent layer. The first spacer and the second spacer are selectively etched away, creating a first slit and a second slit. Respective projections of these slits are crossing one another at an angle. At such a crossing an opening is formed which provides for fluid connectivity through the two layers.
摘要:
A filter includes a membrane having a plurality of nanochannels formed therein. A first surface charge material is deposited on an end portion of the nanochannels. The first surface charge material includes a surface charge to electrostatically influence ions in an electrolytic solution such that the nanochannels reflect ions back into the electrolytic solution while passing a fluid of the electrolytic solution. Methods for making and using the filter are also provided.
摘要:
A filter includes a membrane having a plurality of nanochannels formed therein. Functionalized nanoparticles are deposited through self assembly onto surfaces defining the nanochannels so as to decrease the final diameter of the membrane. Methods for making and using the filter are also provided.
摘要:
A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.
摘要:
A nanodevice includes a reservoir filled with a conductive fluid and a membrane separating the reservoir. The membrane includes an insulating layer. A nanopore is formed through the membrane, and an organic coating is provided on the insulating layer to form a transient bond to a DNA molecule in the nanopore. The transient bond is stronger than thermal motion, such that the transient bond can hold the DNA molecule against the thermal motion. When a voltage is applied across the membrane, the voltage will break the transient bond to move the DNA molecule through the nanopore in a controllable state.
摘要:
A nanodevice is provided. A reservoir is filled with an ionic fluid. A membrane separates the reservoir, and the membrane includes electrode layers separated by insulating layers in which the electrode layers have an organic coating. A nanopore is formed through the membrane, and the organic coating on the electrode layers forms transient bonds to a base of a molecule in the nanopore. When a first voltage is applied to the electrode layers a tunneling current is generated by the base in the nanopore, and the tunneling current travels through the transient bonds formed to the base to be measured as a current signature for distinguishing the base.
摘要:
Methods are provided for fabricating devices. A first layer is formed. A hardmask on the first layer is formed. Features on the hardmask are patterned. The sizes of features on the hardmask are reduced by applying a plasma treatment process to form reduced size features. Also, the size of features on the hardmask can be enlarged to form enlarged size features by applying the plasma treatment process and/or removing the oxidized part of the feature during plasma treatment process. Another method may include a first layer formed on a substrate and a second layer formed on the first layer. First features are patterned on the first layer, and second features are patterned on the second layer. A size of second features on the second layer is closed due to the different oxidation rate of the two layers during the plasma treatment process, to form a self-sealed channel and/or self-buried trench.
摘要:
Techniques for forming a phase change memory cell. An example apparatus includes a substrate and a bottom electrode carried by the substrate. The bottom electrode is a thermal conductor. A phase change layer, including phase change material, is disposed over the bottom electrode. A thermal insulating layer is disposed above the phase change layer. A heater is configured to temporarily melt the phase change material such that the phase change material crystallizes without voids within a switching region after melting.