公开(公告)号：US20140073064A1

公开(公告)日：2014-03-13

申请号：US14086054

申请日：2013-11-21

Applicant: QUALCOMM Incorporated

Inventor： Seung Hyuk Kang ,  Xia Li ,  Wei-Chuan Chen ,  Kangho Lee ,  Xiaochun Zhu ,  Wah Nam Hsu

IPC: H01L43/12

CPC classification number: H01L43/12 ,  H01L43/08

Abstract: A magnetic tunnel junction (MTJ) with direct contact is manufactured having lower resistances, improved yield, and simpler fabrication. The lower resistances improve both read and write processes in the MTJ. The MTJ layers are deposited on a bottom electrode aligned with the bottom metal. An etch stop layer may be deposited adjacent to the bottom metal to prevent overetch of an insulator surrounding the bottom metal. The bottom electrode is planarized before deposition of the MTJ layers to provide a substantially flat surface. Additionally, an underlayer may be deposited on the bottom electrode before the MTJ layers to promote desired characteristics of the MTJ.

Abstract translation: 具有直接接触的磁性隧道结（MTJ）被制造成具有较低的电阻，提高的产量和更简单的制造。 较低的电阻提高了MTJ中的读取和写入过程。 MTJ层沉积在与底部金属对准的底部电极上。 蚀刻停止层可以沉积在底部金属附近，以防止围绕底部金属的绝缘体的过蚀刻。 在沉积MTJ层之前将底部电极平坦化以提供基本平坦的表面。 另外，可以在MTJ层之前的底部电极上沉​​积底层以促进MTJ的期望特性。

公开(公告)号：US20140035075A1

公开(公告)日：2014-02-06

申请号：US14048704

申请日：2013-10-08

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Seung Hyuk Kang ,  Xia Li ,  Kangho Lee

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic tunnel junction device includes a Synthetic Anti-Ferromagnetic (SAF) layer, a first free layer, and second free layer. The magnetic tunnel junction device further includes a spacer layer between the first and second free layers. The first free layer is magneto-statically coupled to the second free layer. A thickness of the spacer layer is at least 4 Angstroms.

Abstract translation: 磁性隧道结装置包括合成反铁磁（SAF）层，第一自由层和第二自由层。 磁性隧道结装置还包括在第一和第二自由层之间的间隔层。 第一自由层被磁静态耦合到第二自由层。 间隔层的厚度至少为4埃。

公开(公告)号：US09813049B2

公开(公告)日：2017-11-07

申请号：US14824460

申请日：2015-08-12

Applicant: QUALCOMM Incorporated

Inventor： Jimmy Kan ,  Manu Rastogi ,  Kangho Lee ,  Seung Hyuk Kang

IPC: H03K5/153 ,  H03K3/3565 ,  H03K3/45 ,  H03K3/012 ,  H03K5/24

CPC classification number: H03K3/3565 ,  H03K3/012 ,  H03K3/45 ,  H03K3/455 ,  H03K5/2409 ,  H03K5/2472

Abstract: A particular apparatus includes a magnetic tunnel junction (MTJ) device and a transistor. The MTJ device and the transistor are included in a comparator that has a hysteresis property associated with multiple transition points that correspond to magnetic switching points of the MTJ device.

公开(公告)号：US20170178741A1

公开(公告)日：2017-06-22

申请号：US15450055

申请日：2017-03-06

Applicant: QUALCOMM Incorporated

Inventor： Jung Pill Kim ,  Taehyun Kim ,  Kangho Lee ,  Seung H. Kang ,  Xia Li ,  Wah Nam Hsu

IPC: G11C17/02 ,  G11C11/16

CPC classification number: G11C17/18 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  G11C17/02 ,  G11C17/16 ,  G11C17/165

Abstract: A one time programming (OTP) apparatus unit cell includes magnetic tunnel junctions (MTJs) with reversed connections for placing the MTJ in an anti-parallel resistance state during programming. Increased MTJ resistance in its anti-parallel resistance state causes a higher programming voltage which reduces programming time and programming current.

公开(公告)号：US20170141729A1

公开(公告)日：2017-05-18

申请号：US15417468

申请日：2017-01-27

Applicant: QUALCOMM Incorporated

Inventor： Jimmy Kan ,  Kangho Lee ,  Seung Hyuk Kang

IPC: H03B15/00

CPC classification number: H03B15/006 ,  G01R33/09 ,  G01R33/1284 ,  G11B5/314 ,  G11B5/3146 ,  G11B5/35 ,  G11B5/3909 ,  G11B2005/0024 ,  G11B2005/3996

Abstract: An apparatus includes a polarizer of a spin-torque oscillator (STO). The polarizer has a perpendicular magnetic anisotropy (PMA) and is configured to receive a first signal having a current density of between 0.51×106 amps per square centimeter (amps/cm2) and 15.3×106 amps/cm2. The apparatus also includes a magnetically soft oscillating region including an antiferromagnetic (AF) coupling layer coupling a first free layer to a second free layer and located between the polarizer and a reference region. The reference region is configured to output a second signal responsive to the first signal, the second signal having a frequency less than 8 gigahertz (GHz).

公开(公告)号：US09646670B2

公开(公告)日：2017-05-09

申请号：US15158658

申请日：2016-05-19

Applicant: QUALCOMM Incorporated

Inventor： Kangho Lee ,  Jimmy Kan ,  Seung Hyuk Kang

IPC: G11C11/00 ,  G11C11/16 ,  G11C11/18 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11C8/00

CPC classification number: G11C11/1675 ,  G11C8/005 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/18 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods and apparatus relating to spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy are disclosed. In an example, disclosed is a three-terminal magnetic tunnel junction (MTJ) storage element that is programmed via a combination of voltage-controlled magnetic anisotropy (VCMA) and spin-orbit torque (SOT) techniques. Also disclosed is a memory controller configured to program the three-terminal MTJ storage element via VCMA and SOT techniques. The disclosed devices improve efficiency over conventional devices by using less write energy, while having a design that is simpler and more scalable than conventional devices. The disclosed devices also have increased thermal stability without increasing required switching current, as critical switching current between states is essentially the same.

公开(公告)号：US09634237B2

公开(公告)日：2017-04-25

申请号：US14581361

申请日：2014-12-23

Applicant: QUALCOMM Incorporated

Inventor： Kangho Lee ,  Jimmy Kan ,  Xiaochun Zhu ,  Matthias Georg Gottwald ,  Chando Park ,  Seung Hyuk Kang

IPC: H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01F10/32

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

公开(公告)号：US09620706B2

公开(公告)日：2017-04-11

申请号：US14558103

申请日：2014-12-02

Applicant: QUALCOMM Incorporated

Inventor： Kangho Lee ,  Chando Park ,  Jimmy Kan ,  Matthias Georg Gottwald ,  Xiaochun Zhu ,  Seung Hyuk Kang

IPC: H01L29/82 ,  H01L21/02 ,  H01L21/00 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L43/12

Abstract: An apparatus includes a capping layer disposed on top of a free layer. The apparatus also includes a magnetic etch stop layer disposed on top of the capping layer. The capping layer and the magnetic etch stop layer are included in a spin-transfer torque magnetoresistive random access memory (STT-MRAM) magnetic tunnel junction (MTJ) device.

公开(公告)号：US09601687B2

公开(公告)日：2017-03-21

申请号：US14179502

申请日：2014-02-12

Applicant: QUALCOMM Incorporated

Inventor： Chando Park ,  Kangho Lee ,  Seung Hyuk Kang

IPC: H01L43/00 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) and methods for fabricating a MTJ are described. An MTJ includes a fixed layer and a barrier layer on the fixed layer. Such an MTJ also includes a free layer interfacing with the barrier layer. The free layer has a crystal structure in accordance with the barrier layer. The MTJ further includes an amorphous capping layer interfacing with the free layer.

公开(公告)号：US09595917B2

公开(公告)日：2017-03-14

申请号：US14818549

申请日：2015-08-05

Applicant: QUALCOMM Incorporated

Inventor： Jimmy Kan ,  Kangho Lee ,  Seung Hyuk Kang

IPC: G11B5/31 ,  H03B15/00 ,  G11B5/35 ,  G11B5/00

CPC classification number: H03B15/006 ,  G01R33/09 ,  G01R33/1284 ,  G11B5/314 ,  G11B5/3146 ,  G11B5/35 ,  G11B5/3909 ,  G11B2005/0024 ,  G11B2005/3996

Abstract: An apparatus includes a polarizer, a first free layer, a second free layer, and an antiferromagnetic (AF) coupling layer. The polarizer has a perpendicular magnetic anisotropy (PMA). The polarizer, the first free layer, the second free layer, and the AF coupling layer are included in a spin-torque oscillator (STO). The AF coupling layer is positioned between the first free layer and the second free layer.

Abstract translation: 一种装置包括偏振器，第一自由层，第二自由层和反铁磁（AF）耦合层。 偏振器具有垂直磁各向异性（PMA）。 偏振器，第一自由层，第二自由层和AF耦合层包括在自旋扭矩振荡器（STO）中。 AF耦合层位于第一自由层和第二自由层之间。