公开(公告)号：US20210143050A1

公开(公告)日：2021-05-13

申请号：US16676663

申请日：2019-11-07

Applicant: QUALCOMM Incorporated

Inventor： Junjing BAO ,  Ye LU ,  Haitao CHENG

IPC: H01L21/764 ,  H01L29/06 ,  H01L49/02

Abstract: Certain aspects of the present disclosure generally relate to a semiconductor device including an air gap underneath passive devices. The semiconductor device generally includes a substrate layer, a passive device layer, and a dielectric layer disposed between the substrate layer and the passive device layer, wherein the dielectric layer includes an air gap disposed beneath at least one passive device in the passive device layer.

公开(公告)号：US20210028115A1

公开(公告)日：2021-01-28

申请号：US16517845

申请日：2019-07-22

Applicant: QUALCOMM Incorporated

Inventor： Junjing BAO ,  Peijie FENG ,  Haining YANG ,  Jun YUAN

IPC: H01L23/532 ,  H01L23/535 ,  H01L29/45 ,  H01L21/768

Abstract: Certain aspects of the present disclosure generally relate to an integrated device including a low parasitic middle-of-line (MOL) structure. The integrated device generally includes a plurality of semiconductor devices; an MOL structure disposed above the plurality of semiconductor devices and comprising a dielectric layer; a first barrier-less conductor extending between a first terminal of a semiconductor device in the plurality of semiconductor devices and into the MOL structure; and a first air gap disposed between a lateral surface of an upper portion of the first barrier-less conductor and the dielectric layer of the MOL structure.

公开(公告)号：US20200066858A1

公开(公告)日：2020-02-27

申请号：US16112484

申请日：2018-08-24

Applicant: QUALCOMM Incorporated

Inventor： Junjing BAO ,  Peijie FENG ,  Ye LU ,  Bin YANG

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/51 ,  H01L29/66

Abstract: A thin film transistor may include an insulating substrate and a layer of semiconductor material disposed over the insulating substrate. The thin film transistor may further include a gate electrode, a source electrode and a drain electrode disposed over the insulating substrate. The thin film transistor may further include a layer of first dielectric material disposed in between the gate electrode and the source and drain electrodes, and a layer of second dielectric material in contact with the layer of first dielectric material. The second dielectric material has a negative index.

公开(公告)号：US20180342513A1

公开(公告)日：2018-11-29

申请号：US15663602

申请日：2017-07-28

Applicant: QUALCOMM Incorporated

Inventor： Ye LU ,  Junjing BAO ,  Bin YANG ,  Lixin GE ,  Yun YUE

IPC: H01L27/092 ,  H01L29/04 ,  H01L21/78 ,  H01L29/16 ,  H01L29/423 ,  H01L29/49 ,  H01L29/06 ,  H01L21/8238

Abstract: A complementary metal-oxide-semiconductor (CMOS) transistor may include a first semiconductor structure and a gate stack on the first semiconductor structure. The gate stack may include a gate dielectric layer on the first semiconductor structure, a work function material on the gate dielectric layer, and a gate metal fill material on the work function material of the gate stack. The gate metal fill material may include a low resistivity carbon alloy. A dielectric fill material may be included on the gate stack.

公开(公告)号：US20160211216A1

公开(公告)日：2016-07-21

申请号：US14819159

申请日：2015-08-05

Applicant: QUALCOMM Incorporated

Inventor： Jeffrey Junhao Xu ,  Junjing BAO ,  John Jianhong ZHU ,  Stanley Seungchul SONG ,  Niladri Narayan MOJUMDER ,  Choh Fei YEAP

IPC: H01L23/532 ,  G05B19/418 ,  H01L21/768 ,  B29C67/00 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/53223 ,  B29C64/386 ,  B33Y50/02 ,  G05B19/418 ,  G05B2219/45031 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76871 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53219 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit device includes a first metal layer including aluminum. The integrated circuit device includes a second metal layer including an interconnect structure. The interconnect structure includes a layer of first material including aluminum. The integrated circuit device includes an inter-diffusion layer that includes aluminum. The inter-diffusion layer is proximate to the first metal layer and proximate to the layer of first material including aluminum. The integrated circuit device includes a self-forming barrier layer that includes aluminum. The self-forming barrier layer is proximate to a dielectric layer and proximate to the layer of first material including aluminum.

Abstract translation: 集成电路器件包括包括铝的第一金属层。 集成电路器件包括具有互连结构的第二金属层。 互连结构包括一层包括铝的第一材料。 集成电路器件包括包括铝的互扩散层。 互扩散层靠近第一金属层并且靠近包括铝的第一材料层。 集成电路器件包括包含铝的自形成阻挡层。 自形成阻挡层靠近电介质层并且靠近包括铝的第一材料层。