公开(公告)号：US09768322B2

公开(公告)日：2017-09-19

申请号：US15225592

申请日：2016-08-01

申请人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

发明人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

IPC分类号： H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01L23/00 ,  H01L21/8234 ,  H01L21/4763 ,  H01L21/324 ,  H01L21/321 ,  H01L21/383 ,  H01L21/477 ,  H01L21/428 ,  H01L29/45 ,  H01L21/44 ,  H01L23/31

CPC分类号： H01L29/7869 ,  H01L21/321 ,  H01L21/324 ,  H01L21/383 ,  H01L21/428 ,  H01L21/44 ,  H01L21/47635 ,  H01L21/477 ,  H01L21/823418 ,  H01L23/3171 ,  H01L23/564 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

公开(公告)号：US20160163774A1

公开(公告)日：2016-06-09

申请号：US15009323

申请日：2016-01-28

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L27/32 ,  H01L51/52

CPC分类号： H01L27/3218 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3262 ,  H01L27/3265 ,  H01L51/5284

摘要： A full-color AM OLED includes a transparent substrate, a color filter positioned on an upper surface of the substrate, and a metal oxide thin film transistor backpanel positioned in overlying relationship on the color filter and defining an array of pixels. An array of OLEDs is formed on the backpanel and positioned to emit light downwardly through the backpanel, the color filter, and the substrate in a full-color display. Light emitted by each OLED includes a first emission band with wavelengths extending across the range of two of the primary colors and a second emission band with wavelengths extending across the range of the remaining primary color. The color filter includes for each pixel, two zones separating the first emission band into two separate primary colors and a third zone passing the second emission band.

摘要翻译： 全色AM OLED包括透明基板，位于基板的上表面上的滤色器和金属氧化物薄膜晶体管背板，其位于滤色器上并且限定像素阵列。 OLED阵列形成在背板上并且定位成以全色显示器向下通过背板，滤色器和基板发光。 由每个OLED发射的光包括第一发射带，其波长在两种原色的范围内延伸，第二发射带具有延伸超过剩余原色范围的波长。 滤色器包括每个像素，将第一发射带分成两个分开的原色的两个区和通过第二发射带的第三区。

公开(公告)号：US20150357480A1

公开(公告)日：2015-12-10

申请号：US14829812

申请日：2015-08-19

申请人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong ,  Juergen Musulf ,  Karl Birger Kristoffer Ottosson

发明人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong ,  Juergen Musulf ,  Karl Birger Kristoffer Ottosson

IPC分类号： H01L29/786 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L21/283 ,  H01L21/324

CPC分类号： H01L29/78693 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/324 ,  H01L29/42364 ,  H01L29/7869 ,  H01L51/052

摘要： A thin film semiconductor device has a semiconductor layer including a composite/blend/mixture of an amorphous/nanocrystalline semiconductor ionic metal oxide and an amorphous/nanocrystalline non-semiconducting covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a semiconductive channel, and agate terminal is positioned in communication with the semiconductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.

摘要翻译： 薄膜半导体器件具有包括非晶/纳米晶体半导体离子金属氧化物和非晶/纳米晶体非半导体共价金属氧化物的复合/共混物/混合物的半导体层。 一对端子定位成与半导体层连通并且限定半导体通道，并且玛瑙端子被定位成与半导体沟道连通并进一步定位成控制沟道的传导。 本发明还包括在沉积过程中沉积包括使用氮气的混合物的方法，以控制所得半导体层中的载流子浓度。

公开(公告)号：US20140001462A1

公开(公告)日：2014-01-02

申请号：US13536641

申请日：2012-06-28

申请人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Tian Xiao ,  Juergen Musolf

发明人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Tian Xiao ,  Juergen Musolf

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L21/467 ,  H01L21/4763 ,  H01L23/535 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78696

摘要： A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.

摘要翻译： 一种制造稳定的高迁移率金属氧化物薄膜晶体管的方法包括以下步骤：提供衬底，将栅极定位在衬底上，以及在栅极上沉积栅极电介质层，并且将衬底部分未被栅极覆盖。 包括金属氧化物半导体膜和金属氧化物钝化膜的多层膜活性层沉积在栅极电介质上，钝化膜位于与半导体膜的重叠关系中。 蚀刻停止层位于钝化膜的表面上并限定有源层中的沟道区。 在蚀刻停止层的相对侧上的多个膜有源层的一部分被修改以形成欧姆接触，并且金属源极/漏极触点位于多个膜有源层的修改部分上。

公开(公告)号：US08435832B2

公开(公告)日：2013-05-07

申请号：US13406824

申请日：2012-02-28

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78621

摘要： A method of fabricating MOTFTs on transparent substrates includes positioning opaque gate metal on the front surface of a transparent substrate and depositing transparent gate dielectric, transparent metal oxide semiconductor material, and passivation material on the gate metal and the surrounding area. Portions of the passivation material are exposed from the rear surface of the substrate. Exposed portions are removed to define a channel area overlying the gate area. A relatively thick conductive metal material is selectively deposited on the exposed areas of the semiconductor material to form thick metal source/drain contacts. The selective deposition includes either plating or printing and processing a metal paste.

摘要翻译： 在透明基板上制造MOTFT的方法包括在透明基板的前表面上定位不透明栅极金属，并在栅极金属和周围区域上沉积透明栅极电介质，透明金属氧化物半导体材料和钝化材料。 钝化材料的一部分从基板的后表面露出。 去除暴露部分以限定覆盖栅极区域的沟道区域。 相对厚的导电金属材料被选择性地沉积在半导体材料的暴露区域上以形成厚的金属源极/漏极触点。 选择性沉积包括电镀或印刷和加工金属浆料。

公开(公告)号：US20120300147A1

公开(公告)日：2012-11-29

申请号：US13366503

申请日：2012-02-06

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： G02F1/136

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78606

摘要： A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.

摘要翻译： 在透明基板上制造金属氧化物TFT的方法包括以下步骤：在衬底的前表面上定位不透明栅极金属区域，沉积覆盖栅极金属和周围区域的透明栅极电介质和透明金属氧化物半导体层，沉积透明钝化 在所述半导体材料上沉积光致抗蚀剂，在所述钝化材料上沉积光致抗蚀剂，曝光和显影所述光致抗蚀剂以去除暴露部分，蚀刻所述钝化材料以留下限定沟道区的钝化区，在所述钝化区上沉积透明导电材料， 导电材料，曝光和显影光致抗蚀剂以去除未曝光部分，并且蚀刻导电材料以在沟道区域的相对侧上留下源极和漏极区域。

公开(公告)号：US08273600B2

公开(公告)日：2012-09-25

申请号：US13195882

申请日：2011-08-02

申请人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong

发明人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565

摘要： A method of fabricating MOTFTs on transparent substrates by positioning opaque gate metal on the substrate front surface and depositing gate dielectric material overlying the gate metal and a surrounding area and metal oxide semiconductor material on the dielectric material. Depositing selectively removable etch stop material on the semiconductor material and photoresist on the etch stop material to define an isolation area in the semiconductor material. Removing uncovered portions of the etch stop. Exposing the photoresist from the substrate rear surface using the gate metal as a mask and removing exposed portions leaving the etch stop material overlying the gate metal covered. Etching the semiconductor material to isolate the TFT. Selectively etching the etch stop layer to leave a portion overlying the gate metal defining a channel area. Depositing and patterning conductive material to form source and drain areas on opposed sides of the channel area.

摘要翻译： 一种在透明基板上制造MOTFT的方法，该方法是将不透明栅极金属定位在衬底前表面上，并沉积覆盖在栅极金属上的栅介质材料以及介电材料上的周围区域和金属氧化物半导体材料。 在半导体材料和蚀刻停止材料上的光致抗蚀剂上沉积选择性可移除的蚀刻停止材料以限定半导体材料中的隔离区域。 去除蚀刻停止件的未覆盖部分。 使用栅极金属作为掩模从基板后表面露出光致抗蚀剂，并去除暴露部分，留下覆盖栅极金属的蚀刻停止材料。 蚀刻半导体材料以隔离TFT。 选择性地蚀刻蚀刻停止层以留下覆盖栅极金属的部分限定沟道区域。 沉积和图案化导电材料以在通道区域的相对侧上形成源区和漏区。

公开(公告)号：US20120182284A1

公开(公告)日：2012-07-19

申请号：US13006799

申请日：2011-01-14

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： G06F3/038

CPC分类号： G09G3/3266 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2300/0439 ,  G09G2300/0842 ,  G09G2310/0218 ,  G09G2310/0267

摘要： An active matrix incorporated in a color display device includes an array of pixels arranged in n rows and m columns, each pixel having x elements including at least a red, a green, and a blue element. A plurality of m data lines, a different one of the plurality of m data lines being coupled one each to each column of pixels and to each element in each pixel in the column of pixels. A plurality of xn scan lines is provided, the xn scan lines being divided into n groups of x scan lines each. A different group of three xn scan lines is coupled to each row of the n rows of pixels and each of the different x scan lines in each group is coupled to a different one of the x elements.

摘要翻译： 结合在彩色显示装置中的有源矩阵包括排列成n行m列的像素阵列，每个像素具有至少包括红色，绿色和蓝色元素的x个元素。 多条m条数据线，多条m条数据线中的一条不同的一条线连接到每一列的像素，并与像素列的每个像素中的每一个元素相连。 提供多个xn个扫描线，xn条扫描线分为n组x条扫描线。 三个xn扫描线的不同组耦合到n行像素的每行，并且每组中的每个不同的x扫描线耦合到x个元素中的不同的x元素。

公开(公告)号：US08193594B2

公开(公告)日：2012-06-05

申请号：US13015013

申请日：2011-01-27

申请人： Gang Yu ,  Chan-Long Shieh ,  Hsing-Chung Lee

发明人： Gang Yu ,  Chan-Long Shieh ,  Hsing-Chung Lee

IPC分类号： H01L21/00 ,  H01L47/00 ,  H01L29/04

CPC分类号： H01L29/861 ,  G02F1/1365 ,  G02F1/167 ,  H01L29/22 ,  H01L29/417 ,  H01L29/786 ,  H01L45/00 ,  H01L51/0035 ,  H01L51/0579 ,  H01L51/0587

摘要： Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.

摘要翻译： 提供了具有高导通/截止电流比和高击穿电压特性的两端开关器件。 这些器件可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。 开关器件包括两个电极和位于电极之间的宽带半导体材料层。 根据一个示例，阴极包括具有低功函数的金属，阳极包括具有p +或p ++类型的导电性的有机材料，并且宽带半导体包括金属氧化物。 阴极和阳极材料之间的功函数差异优选为至少约0.6eV。 可以实现在约15V的电压范围内的至少10,000的开/关电流比。 如果需要，可以在具有低熔点的柔性聚合物基材上形成装置。

公开(公告)号：US20110309389A1

公开(公告)日：2011-12-22

申请号：US13170382

申请日：2011-06-28

申请人： Gang Yu ,  Chan-Long Shieh

发明人： Gang Yu ,  Chan-Long Shieh

IPC分类号： H01L33/08 ,  H01L33/00

CPC分类号： H01L27/322 ,  H01L27/3244 ,  H01L51/5036

摘要： A full-color AM OLED includes a transparent substrate, a color filter positioned on an upper surface of the substrate, and a metal oxide thin film transistor backpanel positioned in overlying relationship on the color filter and defining an array of pixels. An array of OLEDs is formed on the backpanel and positioned to emit light downwardly through the backpanel, the color filter, and the substrate in a full-color display. Light emitted by each OLED includes a first emission band with wavelengths extending across the range of two of the primary colors and a second emission band with wavelengths extending across the range of the remaining primary color. The color filter includes for each pixel, two zones separating the first emission band into two separate primary colors and a third zone passing the second emission band.

摘要翻译： 全色AM OLED包括透明基板，位于基板的上表面上的滤色器和金属氧化物薄膜晶体管背板，其位于滤色器上并且限定像素阵列。 OLED阵列形成在背板上并且定位成以全色显示器向下通过背板，滤色器和基板发光。 由每个OLED发射的光包括第一发射带，其波长在两种原色的范围内延伸，第二发射带具有延伸超过剩余原色范围的波长。 滤色器包括每个像素，将第一发射带分成两个分开的原色的两个区和通过第二发射带的第三区。