公开(公告)号：US09891639B2

公开(公告)日：2018-02-13

申请号：US14147814

申请日：2014-01-06

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Jimmy Fort ,  Fabrice Marinet

IPC: H02J1/10 ,  H02J3/38 ,  H02J7/34 ,  G05F1/46 ,  G06F1/26 ,  G06F1/32 ,  G06F21/75

CPC classification number: G05F1/462 ,  G06F1/26 ,  G06F1/3237 ,  G06F21/755 ,  Y02D10/128 ,  Y10T307/549

Abstract: The current signature of an electronic function is masked by controlling a current source that supplies power for the electronic function is controlled in a dynamically-varying manner. Excess current is detected and compared to a threshold. If the detected excess current meets the threshold, the operation of the electronic function is modified, for example by controlling a clock.

公开(公告)号：US20160133582A1

公开(公告)日：2016-05-12

申请号：US14686908

申请日：2015-04-15

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Julien Mercier ,  Jimmy Fort ,  Alexandre Sarafianos

IPC: H01L23/00 ,  H01L27/092 ,  H01L29/732 ,  H01L27/06

CPC classification number: H01L23/576 ,  G09C1/00 ,  H01L23/57 ,  H01L27/0635 ,  H01L27/0658 ,  H01L27/092 ,  H01L29/7322 ,  H01L2924/0002 ,  H04L9/004 ,  H04L2209/12 ,  H01L2924/00

Abstract: A device for detecting a laser attack made on an integrated circuit chip comprises a bipolar transistor of a first type formed in a semiconductor substrate, that bipolar transistor comprising a parasitic bipolar transistor of a second type. A buried region, forming the base of the parasitic bipolar transistor, operates as a detector of the variations in current flowing caused by impingement of laser light on the substrate.

公开(公告)号：US09070697B2

公开(公告)日：2015-06-30

申请号：US14531025

申请日：2014-11-03

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Jimmy Fort ,  Alexandre Sarafianos ,  Julien Mercier

IPC: H01L29/00 ,  H01L23/00 ,  H01L29/732 ,  H01L27/092 ,  H01L27/06

CPC classification number: H01L23/576 ,  G09C1/00 ,  H01L23/57 ,  H01L27/0635 ,  H01L27/0658 ,  H01L27/092 ,  H01L29/7322 ,  H01L2924/0002 ,  H04L9/004 ,  H04L2209/12 ,  H01L2924/00

Abstract: A device for detecting a laser attack made on an integrated circuit chip comprises a bipolar transistor of a first type formed in a semiconductor substrate, that bipolar transistor comprising a parasitic bipolar transistor of a second type. A buried region, forming the base of the parasitic bipolar transistor, operates as a detector of the variations in current flowing caused by impingement of laser light on the substrate.

Abstract translation: 用于检测在集成电路芯片上形成的激光攻击的装置包括形成在半导体衬底中的第一类型的双极晶体管，该双极晶体管包括第二类型的寄生双极晶体管。 形成寄生双极晶体管的基极的掩埋区域作为由激光照射在衬底上引起的电流变化的检测器。

公开(公告)号：US08907452B2

公开(公告)日：2014-12-09

申请号：US13751549

申请日：2013-01-28

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Jimmy Fort ,  Alexandre Sarafianos ,  Julien Mercier

IPC: H01L27/082

CPC classification number: H01L23/576 ,  G09C1/00 ,  H01L23/57 ,  H01L27/0635 ,  H01L27/0658 ,  H01L27/092 ,  H01L29/7322 ,  H01L2924/0002 ,  H04L9/004 ,  H04L2209/12 ,  H01L2924/00

Abstract: A device for detecting a laser attack in an integrated circuit chip formed in the upper P-type portion of a semiconductor substrate incorporating an NPN bipolar transistor having an N-type buried layer, including a detector of the variations of the current flowing between the base of said NPN bipolar transistor and the substrate.

Abstract translation: 一种用于检测形成在具有N型掩埋层的NPN双极晶体管的半导体衬底的上部P型部分中形成的集成电路芯片中的激光攻击的装置，包括：检测器， 的NPN双极晶体管和衬底。

公开(公告)号：US08819609B2

公开(公告)日：2014-08-26

申请号：US13625697

申请日：2012-09-24

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Mathieu Lisart ,  Fabrice Marinet

IPC: G06F17/50 ,  G06K19/073 ,  G06F21/72 ,  H04L9/00 ,  H01L23/00

CPC classification number: G06F1/26 ,  G06F21/72 ,  G06K19/07309 ,  H01L21/76224 ,  H01L23/576 ,  H01L2924/0002 ,  H03K3/84 ,  H03K19/003 ,  H04L9/004 ,  H04L2209/12 ,  Y10T29/49155 ,  H01L2924/00

Abstract: The disclosure relates to a countermeasure method in an electronic microcircuit, comprising successive process phases executed by a circuit of the microcircuit, and adjusting a power supply voltage between power supply and ground terminals of the circuit, as a function of a random value generated for the process phase, at each process phase executed by the circuit.

Abstract translation: 本公开涉及一种电子微电路中的对策方法，包括由微电路的电路执行的连续处理阶段，以及根据为该电路产生的随机值调整电路与电路的接地端之间的电源电压 处理阶段，在电路执行的每个处理阶段。

公开(公告)号：US20140027881A1

公开(公告)日：2014-01-30

申请号：US13953003

申请日：2013-07-29

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Pascal Fornara

IPC: H01L27/00

CPC classification number: H01L27/00 ,  G04F10/10 ,  G11C27/024 ,  H01L28/40 ,  H01L28/60

Abstract: An electric charge flow element including, on an insulating support, a stack of a first electrode, of a dielectric layer having at least one portion capable of letting charges flow by tunnel effect, and of a second electrode, wherein at least one of the electrodes is made of undoped polysilicon.

Abstract translation: 一种电荷流动元件，包括在绝缘支撑件上，具有至少一部分能够通过隧道效应使电荷流动的介电层的第一电极的堆叠和第二电极，其中至少一个所述电极 由未掺杂的多晶硅制成。

公开(公告)号：US20130159791A1

公开(公告)日：2013-06-20

申请号：US13715157

申请日：2012-12-14

Applicant: Proton World International N.V. ,  STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Jean-Louis Modave ,  Gilles Van Assche ,  Ronny Van Keer

IPC: G06F11/00

CPC classification number: G06F21/554 ,  G06F11/006 ,  G06F11/073 ,  G06F11/0751 ,  G06F11/079 ,  G06F21/755 ,  G06F2207/7219

Abstract: The disclosure concerns a method implemented by a processing device. The method includes performing a first execution by the processing device of a computing function based on one or more initial parameters stored in a first memory device. The execution of the computing function generates one or more modified values of at least one of the initial parameters, wherein during the first execution the one or more initial parameters are read from the first memory device and the one or more modified values are stored in a second memory device. The method also includes performing a second execution by the processing device of the computing function based on the one or more initial parameters stored in the first memory device.

Abstract translation: 本公开涉及由处理装置实现的方法。 该方法包括：基于存储在第一存储器设备中的一个或多个初始参数来执行计算功能的处理设备的第一执行。 计算功能的执行产生至少一个初始参数的一个或多个修改值，其中在第一次执行期间，从第一存储器件读取一个或多个初始参数，并且将一个或多个修改值存储在 第二存储设备。 该方法还包括基于存储在第一存储器件中的一个或多个初始参数来执行计算功能的处理设备的第二执行。