公开(公告)号：US20210333045A1

公开(公告)日：2021-10-28

申请号：US17301962

申请日：2021-04-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoungjin Jang ,  Jiyong Park ,  Jinhong Yu ,  Seungjae Lee ,  Jisick Hwang

IPC: F25D27/00 ,  F25D25/02 ,  F21V33/00

Abstract: A refrigerator including a storage chamber. The refrigerator also includes a first sidewall and a second sidewall arranged to form at least a portion of both side surfaces of the storage chamber. The refrigerator further includes a light source arranged on the first sidewall to illuminate an inside of the storage chamber. The refrigerator also includes a light guide member provided inside the storage chamber and formed to extend between the first sidewall and the second sidewall to guide light emitted from the light source. The light guide member includes an incident surface arranged to face the first sidewall and an exit surface through which the light guided by the light guide member is emitted to an outside of the light guide member.

公开(公告)号：US20210165599A1

公开(公告)日：2021-06-03

申请号：US17035925

申请日：2020-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myeongjong Ju ,  Mingon Shin ,  Seungjae Lee ,  Hwasoo Lee

IPC: G06F3/06

Abstract: A storage device is configured to be connected to a host device via a physical cable which includes a power line and a data line. The storage device includes a non-volatile memory, a data path controller configured to temporarily deactivate the data line while power is supplied from the host device via the power line, and a memory controller. The memory controller includes a biometric module configured to receive biometric data and perform user authentication based on the biometric data; a biometric processing circuit configured to change a state of the memory controller, based on a result of the user authentication; and a data processing circuit configured to encrypt and decrypt data. The data path controller is configured to temporarily deactivate the data line in response to the changed state of the memory controller.

公开(公告)号：US20210088833A1

公开(公告)日：2021-03-25

申请号：US16997485

申请日：2020-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Hun KWON ,  Youngchol Lee ,  Keunbum Lee ,  Seungjae Lee

IPC: G02F1/1335

Abstract: Provided is a display device. The display device includes a display panel; a light source configured to emit light toward the display panel; a diffuser plate configured to diffuse incident light and disposed between the light source and the display panel; an optical lens configured to diffuse the light emitted by the light source; and at least one support provided adjacent to an edge of the optical lens and protruding toward the diffuser plate, the optical lens being integrally formed with the at least one support.

公开(公告)号：US10896641B2

公开(公告)日：2021-01-19

申请号：US16205969

申请日：2018-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suyeon Kim ,  Youngman Lee ,  Seungjae Lee ,  Namhyeon Jeon ,  Kwangtai Kim ,  Hyungsup Byeon

IPC: G09G3/3233 ,  G09G5/02 ,  G09G3/3225

Abstract: In one embodiment, there is a method for compensating for distortion on a display of an electronic device. The method comprises reading from a first memory first information for performing first compensation of pixel data, acquiring second information for performing second compensation of the pixel data, providing the second information to the display, and generating third information based on the first information and the second information.

公开(公告)号：US10560971B2

公开(公告)日：2020-02-11

申请号：US15775106

申请日：2016-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungkuk Seo ,  Jaecheol Kwon ,  Yukyung Kim ,  Seungyun Song ,  Seungjae Lee ,  Jongmu Choi ,  Sungjun Kim ,  Janghoon Lee ,  Yeunwook Lim

IPC: H04W76/10 ,  H04W8/26 ,  H04W88/06 ,  H04W88/04 ,  H04W72/04 ,  H04W84/12

Abstract: The present invention may include an electronic device comprising: a communication module for supporting first short-range wireless communication and second short-range wireless communication; and a processor which is functionally connected to the communication module, wherein the processor is configured to: establish a connection to a first external device over at least one channel in a band through the communication module, using the first short-range wireless communication; while the connection to the first external device is established, identify a request for performing the second short-range wireless communication with a second external device; and connect the second external device to the first external device or an external communication server over the at least one channel in the band, using the second short-range wireless communication, in response to the request. However, the present invention is not limited to the above-described embodiment, and may include other embodiments.

公开(公告)号：US09368597B2

公开(公告)日：2016-06-14

申请号：US14660191

申请日：2015-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungbum Koo ,  Seungjae Lee ,  Shinhye Kim ,  Zulkamain ,  Narae Oh ,  Jeong-Kyu Lee

IPC: H01L21/283 ,  H01L29/66 ,  H01L29/423 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/78 ,  H01L27/11 ,  H01L23/528

CPC classification number: H01L29/66545 ,  H01L21/283 ,  H01L21/31 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/32133 ,  H01L21/768 ,  H01L21/76897 ,  H01L23/528 ,  H01L27/1104 ,  H01L29/165 ,  H01L29/4232 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are provided. The methods may include forming a sacrificial gate pattern on a substrate, forming a first spacer on a sidewall of the sacrificial gate pattern and forming a first interlayer dielectric (ILD) layer covering a sidewall of the first spacer and exposing a top surface of the first spacer. The first spacer may expose an upper portion of the sidewall of the sacrificial gate pattern. The methods may also include forming a capping insulating pattern covering top surfaces of the first spacer and the first ILD layer, replacing the sacrificial gate pattern with a gate electrode structure and patterning the capping insulating pattern to form a second spacer on the first spacer and between the gate electrode structure and the first ILD layer. The second spacer may be formed of a material having a dielectric constant higher than a dielectric constant of the first spacer.

Abstract translation: 提供了制造半导体器件的半导体器件和方法。 所述方法可以包括在衬底上形成牺牲栅极图案，在牺牲栅极图案的侧壁上形成第一间隔物，并形成覆盖第一间隔物的侧壁的第一层间电介质（ILD）层，并暴露第一间隔物的顶表面 间隔 第一间隔物可以暴露牺牲栅极图案的侧壁的上部。 所述方法还可以包括形成覆盖第一间隔物和第一ILD层的顶表面的封盖绝缘图案，用栅极电极结构代替牺牲栅极图案，并且图案化封盖绝缘图案以在第一间隔物上形成第二间隔物， 栅电极结构和第一ILD层。 第二间隔物可以由具有高于第一间隔物的介电常数的介电常数的材料形成。

公开(公告)号：US20150333148A1

公开(公告)日：2015-11-19

申请号：US14660191

申请日：2015-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungbum KOO ,  Seungjae Lee ,  Shinhye Kim ,  Zulkarnain ,  Narae Oh ,  Jeong-Kyu Lee

IPC: H01L29/66 ,  H01L21/283 ,  H01L21/31 ,  H01L21/3105 ,  H01L23/528 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/78 ,  H01L27/11 ,  H01L29/423 ,  H01L21/311

CPC classification number: H01L29/66545 ,  H01L21/283 ,  H01L21/31 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/32133 ,  H01L21/768 ,  H01L21/76897 ,  H01L23/528 ,  H01L27/1104 ,  H01L29/165 ,  H01L29/4232 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are provided. The methods may include forming a sacrificial gate pattern on a substrate, forming a first spacer on a sidewall of the sacrificial gate pattern and forming a first interlayer dielectric (ILD) layer covering a sidewall of the first spacer and exposing a top surface of the first spacer. The first spacer may expose an upper portion of the sidewall of the sacrificial gate pattern. The methods may also include forming a capping insulating pattern covering top surfaces of the first spacer and the first ILD layer, replacing the sacrificial gate pattern with a gate electrode structure and patterning the capping insulating pattern to form a second spacer on the first spacer and between the gate electrode structure and the first ILD layer. The second spacer may be formed of a material having a dielectric constant higher than a dielectric constant of the first spacer.

Abstract translation: 提供了制造半导体器件的半导体器件和方法。 所述方法可以包括在衬底上形成牺牲栅极图案，在牺牲栅极图案的侧壁上形成第一间隔物，并形成覆盖第一间隔物的侧壁的第一层间电介质（ILD）层，并暴露第一间隔物的顶表面 间隔 第一间隔物可以暴露牺牲栅极图案的侧壁的上部。 所述方法还可以包括形成覆盖第一间隔物和第一ILD层的顶表面的封盖绝缘图案，用栅极电极结构代替牺牲栅极图案，并且图案化封盖绝缘图案以在第一间隔物上形成第二间隔物， 栅电极结构和第一ILD层。 第二间隔物可以由具有高于第一间隔物的介电常数的介电常数的材料形成。

公开(公告)号：US09086996B2

公开(公告)日：2015-07-21

申请号：US13941568

申请日：2013-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjae Lee ,  Jinyub Lee

IPC: G06F21/78 ,  G06F12/14 ,  G06F21/79

CPC classification number: G06F12/14 ,  G06F12/1433 ,  G06F21/78 ,  G06F21/79 ,  G06F2212/202

Abstract: A nonvolatile memory device includes a memory cell array and a read/write circuit connected to the memory cell array through bit lines. The read method of the nonvolatile memory device includes receiving a security read request, receiving security information, and executing a security read operation in response to the security read request. The security read operation includes reading of security data from the memory cell array using the read/write circuit, storing of the read security data in a register, performing security decoding on the read security data stored in the register using the received security information, resetting the read/write circuit, and outputting a result of the security decoding.

Abstract translation: 非易失性存储器件包括存储单元阵列和通过位线连接到存储单元阵列的读/写电路。 非易失性存储器件的读取方法包括接收安全读取请求，接收安全信息，以及响应于安全读取请求执行安全读取操作。 安全读取操作包括使用读/写电路从存储单元阵列读取安全数据，将读取的安全数据存储在寄存器中，使用接收到的安全信息对存储在寄存器中的读取的安全数据执行安全解码，重置 读/写电路，并输出安全解码的结果。