公开(公告)号：US11775203B2

公开(公告)日：2023-10-03

申请号：US17376437

申请日：2021-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngdeok Seo ,  Jinyoung Kim ,  Sehwan Park ,  Dongmin Shin ,  Woohyun Kang ,  Shinho Oh

IPC: G06F3/00 ,  G06F3/06 ,  G06N3/08

CPC classification number: G06F3/0655 ,  G06F3/064 ,  G06F3/0604 ,  G06F3/0679 ,  G06N3/08

Abstract: A method of operating a nonvolatile memory device is provided. The method includes: dividing a memory block of a plurality of memory blocks provided in the nonvolatile memory device into a plurality of retention groups; generating time-difference information including a plurality of erase program interval (EPI) values corresponding to the plurality of retention groups; generating offset information including a plurality of offset values corresponding to differences between a plurality of default read voltages and a plurality of corrected read voltages; generating compensated read voltages corresponding to a read address based on the offset information and the time-difference information; and performing a read operation to read data from the nonvolatile memory device based on the read address and the compensated read voltages.

公开(公告)号：US20230154552A1

公开(公告)日：2023-05-18

申请号：US17847545

申请日：2022-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junho Kim ,  Jinyoung Kim ,  Sehwan Park ,  Seoyoung Lee ,  Jisang Lee ,  Joonsuc Jang

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C16/08

CPC classification number: G11C16/3459 ,  G11C16/3404 ,  G11C16/102 ,  G11C16/26 ,  G11C16/08

Abstract: Aggressor memory cells connected to one or more aggressor wordlines are grouped into aggressor cell groups by performing a read operation with respect to the aggressor wordlines based on one or more grouping read voltages, where the aggressor wordlines are adjacent to a selected wordline corresponding to a read address among wordlines of a memory block. Selected memory cells connected to the selected wordline are grouped into a selected cell groups respectively corresponding to the aggressor cell groups. Group read conditions respectively corresponding to the selected cell groups are determined and group read operations are performed with respect to the plurality of selected cell groups based on the group read conditions. The read errors are reduced by grouping the selected memory cells into the selected cell groups according to the change of operation environments.

公开(公告)号：US11514997B2

公开(公告)日：2022-11-29

申请号：US17156801

申请日：2021-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinyoung Kim ,  Sehwan Park ,  Ilhan Park ,  Sangwan Nam

IPC: G11C29/42 ,  G11C29/18 ,  G11C29/44 ,  G11C29/12

Abstract: A controller including: control pins for providing control signals to a nonvolatile memory; a buffer memory configured to store first to third tables; and an error correction code (ECC) circuit configured to correct an error in first data read from the nonvolatile memory according to a first read command, wherein the first table stores first offset information, the second table stores second offset information, and the third table stores third offset information, wherein the third offset information corresponds to a history read level and is determined by the first and second offset information, and when the error of the first data is uncorrectable, an on-chip valley search operation is performed by the nonvolatile memory according to a second read command, detection information of the on-chip valley search operation is received according to a specific command, and the second offset information which corresponds to the detection information is generated.

公开(公告)号：US11500706B2

公开(公告)日：2022-11-15

申请号：US17233816

申请日：2021-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wandong Kim ,  Jinyoung Kim ,  Sehwan Park ,  Hyun Seo ,  Sangwan Nam

IPC: G11C7/00 ,  G06F11/07 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  G11C11/56 ,  G11C16/34

Abstract: An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data, calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.

公开(公告)号：US11482263B2

公开(公告)日：2022-10-25

申请号：US17239647

申请日：2021-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sehwan Park ,  Jinyoung Kim ,  Youngdeok Seo ,  Ilhan Park

IPC: G11C7/10 ,  G11C7/14 ,  G11C7/18 ,  G11C8/08

Abstract: A storage device includes at least one non-volatile memory device and a controller configured to control the at least one non-volatile memory device. The at least one non-volatile memory device performs an on-chip valley search (OVS) operation by latching a read command at an edge of a write enable (WE) signal according to a command latch enable (CLE) signal and an address latch enable (ALE) signal. The controller receives detection information according to the OVS operation from the at least one non-volatile memory device in response to a specific command. The OVS operation includes a first OVS operation using a read level and a second OVS operation using a changed read level.

公开(公告)号：US20220139484A1

公开(公告)日：2022-05-05

申请号：US17353583

申请日：2021-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyoung Kim ,  Sehwan Park ,  Youngdeok Seo ,  Ilhan Park

IPC: G11C29/42 ,  G11C29/44 ,  G11C16/34 ,  G11C16/04 ,  G11C16/26 ,  G11C16/08 ,  G11C16/24

Abstract: A nonvolatile memory device includes a plurality of memory blocks and a control logic circuit configured to perform a first page on-chip valley search (OVS) operation on memory cells connected to one wordline of a memory block selected in response to an address, among the plurality of memory blocks, in response to a first read command. The control logic circuit is further configured to change a read level of at least one state using detection information of the first page OVS operation, and to perform a second page read operation on the memory cells using the changed read level in response to a second read command.

公开(公告)号：US20220139475A1

公开(公告)日：2022-05-05

申请号：US17328487

申请日：2021-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngdeok SEO ,  Jinyoung Kim ,  Sehwan Park ,  Dongmin Shin

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/10 ,  G11C16/08 ,  G06K9/62 ,  G06N20/10

Abstract: A non-volatile memory device includes a memory cell array including memory cells, a page buffer circuit including page buffers respectively connected to bit lines, a buffer memory, and a control logic configured to control a read operation on the memory cells. In the read operation, the control logic obtains valley search detection information including read target block information and word line information by performing a valley search sensing operation on a distribution of threshold voltages of the memory cells, obtains a plurality of read levels using a read information model by inputting the valley search detection information into the read information model, and performs a main sensing operation for the read operation.

公开(公告)号：US10956367B2

公开(公告)日：2021-03-23

申请号：US16694395

申请日：2019-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sehwan Park

IPC: G06F3/0482 ,  G06F3/0481 ,  G06F16/14 ,  G06F16/242 ,  G06F3/0488 ,  G06F3/023

Abstract: A method and apparatus are provided for executing a plurality of applications. Based on receiving a first user input, a first window comprising a plurality of number keys is displayed. Based on a second user input selecting one of the plurality of number keys in the first window, the first window and a second window are displayed together on the display. Based on an application being selected from a list of applications in the second window, the selected application is mapped to the selected number key. After the selected application is mapped, a third user input is received corresponding to the selected number key. In response to receiving the third user input, a first function is performed associated with the selected application. The first function is different from a function associated with another application mapped to another number key of the plurality of number keys.

公开(公告)号：US10572106B2

公开(公告)日：2020-02-25

申请号：US15371758

申请日：2016-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sehwan Park ,  Jaeyong Lee ,  Sungwook Park ,  Jihoon Lee

IPC: G06F3/048 ,  G06F3/0482 ,  G06F3/0489 ,  G06F3/0488 ,  G06F3/0484 ,  G06F17/22

Abstract: A method and an apparatus for performing a Uniform Resource Locator (URL) linkage function using a keypad that changes a screen to a mapped URL when a predetermined key is selected are provided. The method includes displaying the keypad that executes the URL linkage function, sensing a predetermined type of touch generated on a predetermined key existing in the keypad, displaying, in a pop-up menu, a URL item registered in advance on the key, in response to the predetermined type of touch, and changing a screen to a selected URL when a predetermined URL is selected in the pop-up menu.

公开(公告)号：US09805733B2

公开(公告)日：2017-10-31

申请号：US13934839

申请日：2013-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sehwan Park

IPC: G10L15/22 ,  H04W12/06 ,  G10L21/00 ,  H04M1/725

CPC classification number: G10L21/00 ,  G10L15/22 ,  G10L2015/223 ,  H04M1/7253 ,  H04M2250/74 ,  H04W12/06

Abstract: A method of connecting a service between a device and at least one other device is provided. The method includes recording, by the device, a user voice input in a state where a voice command button has been input, outputting first information based on the recorded user voice when an input of the voice command button is cancelled, receiving, by the device, second information corresponding to the first information, recognizing a service type according to the first information and the second information, connecting the device to a subject device in an operation mode of the device determined according to the recognized service type, and performing a service with the connected subject device.