公开(公告)号：US5876797A

公开(公告)日：1999-03-02

申请号：US946845

申请日：1997-10-08

申请人： Israel Beinglass ,  David K. Carlson

发明人： Israel Beinglass ,  David K. Carlson

IPC分类号： C23C16/24 ,  H01L21/203 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/24

摘要： A method of producing doped and undoped silicon layers on a substrate by chemical vapor deposition at elevated pressures of from about 10 to about 350 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temperature adjusted to obtain a silicon deposit of predetermined crystallinity, and the silicon precursor gases fed to the chamber to a preselected high pressure. Both undoped and doped silicon can be deposited at high rates up to about 3000 angstroms per minute.

摘要翻译： 通过在约10至约350托的升高的压力下通过化学气相沉积在衬底上产生掺杂和未掺杂的硅层的方法，由此以可行的速率进行沉积。 将衬底装载在真空室中，调节温度以获得预定结晶度的硅沉积物，并将硅前驱体气体供给到预定的高压。 未掺杂和掺杂的硅都可以以高达每分钟约3000埃的速率沉积。

公开(公告)号：US5700520A

公开(公告)日：1997-12-23

申请号：US668025

申请日：1996-06-19

申请人： Israel Beinglass ,  David K. Carlson

发明人： Israel Beinglass ,  David K. Carlson

IPC分类号： C23C16/24 ,  H01L21/203 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/24

摘要： A method of producing doped and undoped silicon layers on a substrate by chemical vapor deposition at elevated pressures of from about 10 to about 350 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temperature adjusted to obtain a silicon deposit of predetermined crystallinity, and the silicon precursor gases fed to the chamber to a preselected high pressure. Both undoped and doped silicon can be deposited at high rates up to about 3000 angstroms per minute.

摘要翻译： 通过在约10至约350托的升高的压力下通过化学气相沉积在衬底上产生掺杂和未掺杂的硅层的方法，由此以可行的速率进行沉积。 将衬底装载在真空室中，调节温度以获得预定结晶度的硅沉积物，并将硅前驱体气体供给到预定的高压。 未掺杂和掺杂的硅都可以以高达每分钟约3000埃的速率沉积。

公开(公告)号：US5316794A

公开(公告)日：1994-05-31

申请号：US989248

申请日：1992-12-11

申请人： David K. Carlson ,  Norma B. Riley

发明人： David K. Carlson ,  Norma B. Riley

IPC分类号： H01L21/205 ,  C23C16/44 ,  H01L21/00 ,  H01L21/31 ,  C23C16/00

CPC分类号： H01L21/67017 ,  C23C16/4401 ,  Y10S118/07

摘要： A process and apparatus is disclosed for providing access to the interior of a vacuum deposition chamber in a vacuum deposition apparatus without exposing residues, such as chlorosilane residues, within the chamber to moisture and/or oxygen-containing gases. The process comprises first placing over the upper surface of the vacuum deposition apparatus an enclosure which has a bottom opening large enough to completely cover the top opening to the chamber, and which is capable of being filled with one or more non-reactive gases. One or more non-reactive gases are then flowed into the enclosure to purge moisture and/or oxygen-containing gases from the enclosure. After the enclosure has been mounted on the apparatus and purged by the flow of non-reactive gases therein, the vacuum deposition chamber may be opened, while continuing the flow of non-reactive gases into the enclosure. After servicing, the vacuum deposition chamber may be resealed, the flow of non-reactive gases shut off, and the enclosure then removed from the apparatus. In a preferred embodiment, the flow of non-reactive gases into the enclosure is positioned to flow down from the top of the enclosure at a right angle to openings in the sidewall of the enclosure provided for accessing the vacuum deposition chamber, to thereby provide a gas curtain of non-reactive gas flow across the openings to inhibit ingress of moisture and/or oxygen-containing gases, as well as particulate impurities, into the enclosure.

摘要翻译： 公开了一种用于提供在真空沉积设备中进入真空沉积室内部的方法和装置，而不会在室内的残留物例如氯硅烷残留物暴露于湿气和/或含氧气体中。 该方法包括首先在真空沉积设备的上表面上放置外壳，该外壳具有足够大的底部开口以完全覆盖该腔室的顶部开口，并且能够填充一种或多种非反应性气体。 然后将一个或多个非反应性气体流入外壳以从外壳清除湿气和/或含氧气体。 在外壳已经安装在设备上并且被其中的非反应性气体流清除之后，可以打开真空沉积室，同时继续将非反应性气体流入外壳。 维修后，真空沉积室可以重新密封，非反应性气体的流动被切断，然后将外壳从设备中取出。 在优选实施例中，进入外壳的非反应性气体的流动被定位成从壳体的顶部以直角向下流动，所述开口设置在用于进入真空沉积室的外壳的侧壁中的开口处，从而提供 非活性气体的气幕流过开口，以阻止水分和/或含氧气体以及颗粒杂质进入外壳。

公开(公告)号：US08960235B2

公开(公告)日：2015-02-24

申请号：US13284416

申请日：2011-10-28

申请人： David K. Carlson

发明人： David K. Carlson

IPC分类号： C23C16/455 ,  H01J37/32

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45574 ,  F17D1/04 ,  H01J37/32633 ,  Y10T137/6579 ,  Y10T137/85938 ,  Y10T137/87153 ,  Y10T137/87265 ,  Y10T137/87281 ,  Y10T137/87885

摘要： A gas dispersion apparatus for use with a process chamber, comprising: a quartz body having a top, a ring coupled to a bottom surface of the top and a bottom plate having dispersion holes coupled to the ring opposite the top; a plurality of quartz plates disposed between the top and the bottom plate, wherein the plurality of plates are positioned above one another and spaced apart to form a plenum above each of the plurality of plates and the bottom plate; a plurality of quartz tubes to couple the plenums to the plurality of dispersion holes, each of the plurality of quartz tubes having a first end disposed within one of the plenums and having a second end coupled to one of the dispersion holes; and a plurality of conduits disposed through the top, wherein each of the plurality of conduits is coupled to one of the plenums.

摘要翻译： 一种与处理室一起使用的气体分散装置，包括：具有顶部的石英体，联接到顶部的底部表面的环和具有与顶部相对的环的分隔孔的底板; 设置在所述顶板和所述底板之间的多个石英板，其中所述多个板彼此相互间隔开并间隔开，以在所述多个板和所述底板的每一个上方形成气室; 多个石英管，用于将所述通风室连接到所述多个分散孔，所述多个石英管中的每一个具有设置在一个所述增压室内的第一端，并且具有联接到所述分散孔中的一个的第二端; 以及多个通过所述顶部布置的导管，其中所述多个导管中的每一个连接到所述增压室之一。

公开(公告)号：US07758697B2

公开(公告)日：2010-07-20

申请号：US11969139

申请日：2008-01-03

申请人： Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

发明人： Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

IPC分类号： C30B21/02

CPC分类号： C07F7/0896 ,  C01B33/04 ,  C01B33/107 ,  C07F7/12 ,  C23C16/24 ,  C23C16/30

摘要： Methods for depositing a silicon-containing film are described. The methods may include delivering a silicon compound to a surface or a substrate, and reacting the silicon compound to grow the silicon-containing film. The silicon compound may be one or more compounds having a formula selected from the group Si4X8, Si4X10, Si5X10, and Si5X12, where X is independently a hydrogen or halogen.

摘要翻译： 描述了沉积含硅膜的方法。 所述方法可以包括将硅化合物递送到表面或基底，并使硅化合物反应生长含硅膜。 硅化合物可以是一种或多种具有选自Si 4 X 8，Si 4 X 10，Si 5 X 10和Si 5 X 12的式的化合物，其中X独立地是氢或卤素。

公开(公告)号：US20070267143A1

公开(公告)日：2007-11-22

申请号：US11435065

申请日：2006-05-16

申请人： David K. Carlson

发明人： David K. Carlson

IPC分类号： C23F1/00 ,  C03C25/68

CPC分类号： C23C16/4412

摘要： Embodiments of the invention relate to methods and apparatus are disclosed for forming films using CVD. One or more method and apparatus embodiments include preventing the formation of bonds and/or breaking bonds that permit polymers to form in an exhaust line of a CVD apparatus.

摘要翻译： 本发明的实施例涉及用于使用CVD形成膜的方法和装置。 一种或多种方法和装置实施方案包括防止在CVD装置的排气管线中形成允许聚合物形成的键和/或断裂键。

公开(公告)号：US6083323A

公开(公告)日：2000-07-04

申请号：US5311

申请日：1998-01-09

申请人： David K. Carlson ,  Norma Riley ,  Roger N. Anderson

发明人： David K. Carlson ,  Norma Riley ,  Roger N. Anderson

IPC分类号： C23C16/44 ,  C23C16/48 ,  C23C16/52 ,  H01L21/00 ,  B08B5/00 ,  B08B9/00

CPC分类号： C23C16/4405 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67248 ,  Y10S438/905

摘要： An apparatus and a concomitant method for controlling coolant (air) flow proximate a reaction chamber within a workpiece processing system such that the temperature of a wall of the reaction chamber is maintained at a predefined target temperature. The target temperature is typically a temperature that optimizes a process concurrently being accomplished within the chamber, e.g., utilizing one temperature during deposition processes and a different temperature during cleaning processes. The apparatus contains a temperature measuring device to measure the temperature of the chamber wall. The measured temperature is compared to the predefined target temperature. A closed loop system controls the air flow proximate the chamber walls such that the measured temperature becomes substantially equal to the target temperature. Air flow control is provided by an air flow control device located within an inlet conduit that supplies air to a shroud for channeling the air past the reaction chamber. The shroud forms a portion of a housing which supports and encloses the reaction chamber.

摘要翻译： 一种用于控制工件处理系统内的反应室附近的冷却剂（空气）流的装置和并发方法，使得反应室的壁的温度保持在预定的目标温度。 目标温度通常是优化室内同时进行的过程的温度，例如在沉积过程期间利用一个温度和在清洁过程期间不同的温度。 该装置包含用于测量室壁温度的温度测量装置。 将测量的温度与预定的目标温度进行比较。 闭环系统控制靠近室壁的空气流，使得测量的温度基本上等于目标温度。 空气流量控制由位于入口管道内的空气流量控制装置提供，该进气管道将空气供给到护罩，以将空气引导通过反应室。 护罩形成支撑并包围反应室的壳体的一部分。

公开(公告)号：US5914050A

公开(公告)日：1999-06-22

申请号：US934920

申请日：1997-09-22

申请人： Paul B. Comita ,  David K. Carlson ,  Kimberly E. Klinck ,  Harold J. Mellen, III

发明人： Paul B. Comita ,  David K. Carlson ,  Kimberly E. Klinck ,  Harold J. Mellen, III

IPC分类号： C23C16/44 ,  C23C16/48 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/4405 ,  C23C16/4401

摘要： Chemical vapor deposition apparatus 10 which includes a chemical vapor deposition processing chamber 12 having a base ring 18 and upper and lower quartz windows 20 and 22, and a quartz liner 26 lining the base ring 18, wherein a purge channel 46 is formed, in an outer surface of the liner 26, to remove contaminant material from an interface between the base ring 18 and the liner 26.

摘要翻译： 化学气相沉积装置10包括具有基环18和上，下石英窗20和22的化学气相沉积处理室12和衬在基环18上的石英衬垫26，其中形成有净化通道46 衬套26的外表面，以从基环18和衬套26之间的界面去除污染物质。

公开(公告)号：US5411593A

公开(公告)日：1995-05-02

申请号：US167675

申请日：1993-12-14

申请人： David K. Carlson ,  Norma B. Riley

发明人： David K. Carlson ,  Norma B. Riley

IPC分类号： H01L21/205 ,  C23C16/44 ,  H01L21/00 ,  H01L21/31 ,  C23C16/00

CPC分类号： H01L21/67017 ,  C23C16/4401 ,  Y10S118/07

摘要： A process and apparatus is disclosed for providing access to the interior of a vacuum deposition chamber in a vacuum deposition apparatus without exposing residues, such as chlorosilane residues, within the chamber to moisture and/or oxygen-containing gases. The process comprises first placing over the upper surface of the vacuum deposition apparatus an enclosure which has a bottom opening large enough to completely cover the top opening to the chamber, and which is capable of being filled with one or more non-reactive gases. One or more non-reactive gases are then flowed into the enclosure to purge moisture and/or oxygen-containing gases from the enclosure. After the enclosure has been mounted on the apparatus and purged by the flow of non-reactive gases therein, the vacuum deposition chamber may be opened, while continuing the flow of non-reactive gases into the enclosure. After servicing, the vacuum deposition chamber may be resealed, the flow of non-reactive gases shut off, and the enclosure then removed from the apparatus. In a preferred embodiment, the flow of non-reactive gases into the enclosure is positioned to flow down from the top of the enclosure at a right angle to openings in the sidewall of the enclosure provided for accessing the vacuum deposition chamber, to thereby provide a gas curtain of non-reactive gas flow across the openings to inhibit ingress of moisture and/or oxygen-containing gases, as well as particulate impurities, into the enclosure.

摘要翻译： 公开了一种用于提供在真空沉积设备中进入真空沉积室内部的方法和装置，而不会在室内的残留物例如氯硅烷残留物暴露于湿气和/或含氧气体中。 该方法包括首先在真空沉积设备的上表面上放置外壳，该外壳具有足够大的底部开口以完全覆盖该腔室的顶部开口，并且能够填充一种或多种非反应性气体。 然后将一个或多个非反应性气体流入外壳以从外壳清除湿气和/或含氧气体。 在外壳已经安装在设备上并且被其中的非反应性气体流清除之后，可以打开真空沉积室，同时继续将非反应性气体流入外壳。 维修后，真空沉积室可以重新密封，非反应性气体的流动被切断，然后将外壳从设备中取出。 在优选实施例中，进入外壳的非反应性气体的流动被定位成从壳体的顶部以直角向下流动，所述开口位于设置用于进入真空沉积室的外壳的侧壁中的开口处，从而提供 非活性气体的气幕流过开口，以阻止水分和/或含氧气体以及颗粒杂质进入外壳。

公开(公告)号：US5116181A

公开(公告)日：1992-05-26

申请号：US354161

申请日：1989-05-19

申请人： David W. Severns ,  Brian Tompson ,  Paul R. Lindstrom ,  David K. Carlson

发明人： David W. Severns ,  Brian Tompson ,  Paul R. Lindstrom ,  David K. Carlson

IPC分类号： H01L21/205 ,  C23C16/54 ,  C30B25/02 ,  C30B35/00 ,  H01L21/673 ,  H01L21/687

CPC分类号： H01L21/68764 ,  C23C16/4401 ,  C23C16/54 ,  C30B25/02 ,  C30B35/005 ,  H01L21/68707 ,  H01L21/68771

摘要： A susceptor carrying semiconductor wafers for processing is suspended from a compliant attachment at its upper end and is lowered into a reaction chamber for processing. At the completion of processing, the susceptor is withdrawn vertically to permit a robot to unload the processed wafers and load unprocessed wafers. In order to fix the position of the susceptor during the loading operations, a support carriage is moved into position to engage the lower end of the susceptor. Noxious and corrosive chloride vapors are simultaneously withdrawn from the reaction chamber by a vacuum line attached to the support carriage.