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    METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE
    51.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE 失效
    制造半导体光学器件的方法

    公开(公告)号：US20080293176A1

    公开(公告)日：2008-11-27

    申请号：US12039267

    申请日：2008-02-28

    申请人： Takafumi Oka ,  Shinji Abe

    发明人： Takafumi Oka ,  Shinji Abe

    IPC分类号： H01L33/00

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2086 ,  H01S5/2202 ,  H01S5/2214 ,  H01S5/34333

    摘要： A method for manufacturing a semiconductor optical device includes: forming a first resist pattern on top surface of a laminated semiconductor structure; forming channels and a waveguide ridge by dry etching using the first resist pattern as a mask; forming an SiO2 film on the waveguide ridge and the channels, leaving the first resist pattern on a top surface of the waveguide ridge; forming a second resist pattern covering the SiO2 film on the channels, and exposing the top surface of the SiO2 film on top of the waveguide ridge; removing the SiO2 film by dry etching using the second resist pattern as a mask; removing the first and second resist patterns by a wet method; and forming a p-side electrode.

    摘要翻译： 一种制造半导体光学器件的方法包括：在层叠半导体结构的顶表面上形成第一抗蚀剂图案; 通过使用第一抗蚀剂图案作为掩模的干蚀刻形成通道和波导脊; 在波导脊和通道上形成SiO 2膜，将第一抗蚀剂图案留在波导脊的顶表面上; 在所述通道上形成覆盖所述SiO 2膜的第二抗蚀剂图案，并且将所述SiO 2膜的顶表面暴露在所述波导脊的顶部; 通过使用第二抗蚀剂图案作为掩模的干蚀刻去除SiO 2膜; 通过湿法去除第一和第二抗蚀剂图案; 并形成p侧电极。

    Communication control system and control method thereof
    52.
    发明授权
    Communication control system and control method thereof 失效
    通信控制系统及其控制方法

    公开(公告)号：US07006442B1

    公开(公告)日：2006-02-28

    申请号：US09717293

    申请日：2000-11-22

    申请人： Shinji Abe ,  Shinji Ueno

    发明人： Shinji Abe ,  Shinji Ueno

    IPC分类号： H04L12/56 ,  G06F13/00

    CPC分类号： H04L49/901 ,  H04L49/90

    摘要： In a communication control system for controlling packet transfer conducted by a plurality of logical channels between nodes, a circuit is provided for recording, in a descriptor for recording information regarding transfer by each logical channel, information including a stop bit, an activation bit, the number of logical channel to be activated, an identification value, the number of logical channel to be monitored and a monitoring identification value which are information regarding the order of transfer by each logical channel, and a data link layer includes a circuit for executing transfer by each logical channel based on the order of transfer by each logical channel designated by a descriptor.

    摘要翻译： 在用于控制由节点之间的多个逻辑信道进行的分组传送的通信控制系统中，提供电路，用于在用于记录关于每个逻辑信道的传送的信息的描述符中记录包括停止位，激活位， 要激活的逻辑信道的数量，识别值，要监视的逻辑信道的数量和作为关于每个逻辑信道的传送顺序的信息的监视标识值，以及数据链路层包括用于执行传输的电路 每个逻辑信道基于由描述符指定的每个逻辑信道的传送顺序。

    Process for producing olefinic polymer
    53.
    发明授权
    Process for producing olefinic polymer 失效
    制备烯烃聚合物的方法

    公开(公告)号：US06858681B2

    公开(公告)日：2005-02-22

    申请号：US10400539

    申请日：2003-03-28

    申请人： Satoru Ohtani ,  Shinji Abe ,  Hiroto Nishida

    发明人： Satoru Ohtani ,  Shinji Abe ,  Hiroto Nishida

    IPC分类号： B01J8/24 ,  C08F2/34 ,  C08F210/16

    CPC分类号： B01J8/1827 ,  C08F210/16 ,  C08F2/001 ,  C08F2/34 ,  C08F2/005 ,  C08F210/14 ,  C08F2500/12 ,  C08F2500/18 ,  C08F2500/17

    摘要： The process for producing an olefinic polymer comprises introducing a saturated aliphatic hydrocarbon in a liquid phase state and in a vapor phase state into the aforementioned fluidized-bed and (co)polymerizing in the condition that when the inside radius of the cylinder section of the fluidized-bed reactor is defined as a distance of 1, the relationship between the concentration (C1) of the saturated aliphatic hydrocarbon put in a liquid state in the peripheral portion of the cylinder section at a relative distance of 0.7 to 1.0 from the center of the cylinder section as a start point and the concentration (C2) of the saturated aliphatic hydrocarbon put in a liquid state in the center portion of the cylinder section at a relative distance less than 0.7 from the center fulfills the following equation: C1>C2 at a place close to the upstream section of said gas distributing plate.

    摘要翻译： 制备烯烃聚合物的方法包括将液相状态和气相状态的饱和脂族烃引入上述流化床和（共）聚合，条件是当流化床的圆筒部分的内半径 反应器被定义为距离1的距离，在圆筒部分的周边部分中的液体状态的饱和脂族烃的浓度（C1）之间的距离为距离中心的0.7至1.0的相对距离 气缸部分作为起始点，并且在中心部分的中心部分处于液态的饱和脂族烃的浓度（C2）在距中心小于0.7的相对距离处满足以下等式：C1> C2 靠近所述气体分配板的上游部分。

    Rolling bearing
    54.
    发明授权
    Rolling bearing 有权
    滚动轴承

    公开(公告)号：US06715924B2

    公开(公告)日：2004-04-06

    申请号：US10200335

    申请日：2002-07-23

    申请人： Shinji Abe ,  Atsushi Yao ,  Tomohiro Haruta

    发明人： Shinji Abe ,  Atsushi Yao ,  Tomohiro Haruta

    IPC分类号： F16C3358

    CPC分类号： F16C19/06 ,  F16C33/585

    摘要： Within bounds on both sides of an axial center of each of the raceways of an outer and inner ring, a curvature radius of a raceway portion in a dimensional range covering at least 45% of a raceway width with respect to the axial center thereof is defined to be within the range of between ±1 &mgr;m to/from a mean curvature radius of the raceway in the dimensional range.

    摘要翻译： 在外圈和内圈的每个滚道的轴向中心的两侧的边界内，限定了覆盖滚道宽度相对于其轴心的至少45％的尺寸范围内的滚道部分的曲率半径 在尺寸范围内处于±1mum至/距滚道的平均曲率半径之间的范围内。

    Two-stroke cycle multispark ignition type gasoline engine
    57.
    发明授权
    Two-stroke cycle multispark ignition type gasoline engine 失效
    二冲程多点火式点火式汽油机

    公开(公告)号：US4538568A

    公开(公告)日：1985-09-03

    申请号：US599604

    申请日：1984-04-16

    申请人： Tetsuzo Fujikawa ,  Shinji Abe

    发明人： Tetsuzo Fujikawa ,  Shinji Abe

    IPC分类号： F02P15/08 ,  F02B1/02 ,  F02B1/04 ,  F02B23/08 ,  F02B75/02 ,  F02P15/02 ,  F02P15/10

    CPC分类号： F02P15/02 ,  F02P15/10 ,  F02B1/04 ,  F02B2075/025

    摘要： An internal combustion engine of the spark ignition type developing a maximum output power at about 8000 rpm includes at least two ignition plugs for each cylinder and projections formed on the inner wall surface of a cylinder head for producing a squishy current. The engine also includes an ignition device including a delay circuit for delaying the ignition time in the high-speed rotation range, to thereby provide improvements in the output power and fuel consumption rate over the entire rotation range.

    摘要翻译： 以大约8000rpm发展最大输出功率的火花点火式内燃机包括至少两个点火塞，每个气缸和凸起形成在气缸盖的内壁表面上，用于产生潮湿的电流。 发动机还包括点火装置，其包括用于延迟高速旋转范围内的点火时间的延迟电路，从而提供在整个旋转范围内的输出功率和燃料消耗率的改善。

    Fault-tolerant system and fault-tolerant control method
    58.
    发明授权
    Fault-tolerant system and fault-tolerant control method 有权
    容错系统和容错控制方法

    公开(公告)号：US08924772B2

    公开(公告)日：2014-12-30

    申请号：US13229956

    申请日：2011-09-12

    申请人： Shinji Abe

    发明人： Shinji Abe

    IPC分类号： G06F11/00 ,  G06F11/20 ,  G06F11/16

    CPC分类号： G06F11/2028 ,  G06F11/1645 ,  G06F11/1654 ,  G06F11/2038

    摘要： A fault-tolerant system including a plurality of modules each further including a CPU subsystem, a fault-tolerant control unit, and an I/O subsystem, wherein the fault-tolerant control unit includes a master FT control LSI chip and at least one slave FT control LSI chip. One module is placed in an active state while the other module is placed in a standby state, so that I/O requests made by CPU subsystems of these modules are selectively delivered to I/O subsystems based on the master/slave relationship. Upon receiving fault information representing a failed subsystem which is either the CPU subsystem or the I/O subsystem found in the module, the master FT control LSI chip sends a command for controlling isolation of the failed subsystem to the slave FT control LSI chip, so that the slave FT control LSI chip controls isolation of the failed subsystem based on the command.

    摘要翻译： 一种容错系统，包括多个模块，每个模块还包括CPU子系统，容错控制单元和I / O子系统，其中所述容错控制单元包括主FT控制LSI芯片和至少一个从机 FT控制LSI芯片。 一个模块处于活动状态，而另一个模块处于待机状态，因此这些模块的CPU子系统产生的I / O请求将根据主/从关系选择性地传送到I / O子系统。 主机FT控制LSI芯片接收到代表模块中发现的CPU子系统或I / O子系统的故障子系统的故障信息时，发送用于控制故障子系统与从FT控制LSI芯片隔离的命令，因此 从属FT控制LSI芯片根据命令控制故障子系统的隔离。

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    59.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体发光元件及其制造方法

    公开(公告)号：US20110193126A1

    公开(公告)日：2011-08-11

    申请号：US12911772

    申请日：2010-10-26

    申请人： Takafumi Oka ,  Shinji Abe ,  Kazushige Kawasaki ,  Hitoshi Sakuma

    发明人： Takafumi Oka ,  Shinji Abe ,  Kazushige Kawasaki ,  Hitoshi Sakuma

    IPC分类号： H01L33/40 ,  H01L21/283

    CPC分类号： H01S5/32341 ,  H01L33/20 ,  H01L33/385 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/22

    摘要： A semiconductor light-emitting element comprises: a semiconductor substrate; a semiconductor laminated structure including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, and a contact layer that are sequentially laminated on the semiconductor substrate; a ridge portion in an upper portion of the semiconductor laminated structure; a channel portion adjoining opposite sides of the ridge portion; a terrace portion adjoining opposite sides of the channel portion and, with the channel portion, sandwiching the ridge portion; a first insulating film covering the channel portion and having openings on the ridge portion and the terrace portion; a single-layer adhesive layer on the first insulating film; a Pd electrode on the ridge portion and a part of the single-layer adhesive layer and electrically connected to the contact layer of the ridge portion; and a second insulating layer covering a portion not covered by the Pd electrode of the single-layer adhesive layer, and the terrace portion.

    摘要翻译： 半导体发光元件包括：半导体衬底; 半导体层叠结构，其包括依次层叠在所述半导体基板上的第一导电型半导体层，有源层，第二导电型半导体层和接触层; 半导体层叠结构的上部的脊部; 邻接所述脊部的相对侧的通道部分; 邻接通道部分的相对侧的平台部分，以及通道部分，夹住所述脊部; 覆盖所述通道部分并且在所述脊部和所述平台部分上具有开口的第一绝缘膜; 第一绝缘膜上的单层粘合剂层; 脊状部分上的Pd电极和单层粘合剂层的一部分，并且电连接到脊部的接触层; 以及覆盖单层粘合剂层的Pd电极未被覆盖的部分的第二绝缘层和露台部。