公开(公告)号：US08784677B2

公开(公告)日：2014-07-22

申请号：US12856725

申请日：2010-08-16

申请人： Daisuke Shiraishi ,  Akira Kagoshima ,  Satomi Inoue ,  Shigeru Nakamoto

发明人： Daisuke Shiraishi ,  Akira Kagoshima ,  Satomi Inoue ,  Shigeru Nakamoto

IPC分类号： H01L21/66 ,  H01L21/465

CPC分类号： H01L21/31116 ,  H01J37/32192 ,  H01J37/32972 ,  H01L21/31122

摘要： A plasma processing apparatus for applying an etching processing to a wafer by using at least two steps of the etching processing which operate with plasma formed within a pressure-reduced processing chamber, the wafer being located within the processing chamber inside a vacuum vessel, and having a mask on a silicon-composed substrate and a film structure, the film structure including processing-target films located under the mask, wherein the plasma processing apparatus is equipped with a function for processing another different wafer in such a manner that a processing condition at a precedent-stage step of the two steps of the etching processing in the processing of the different wafer is adjusted based on a result obtained by detecting a time which has elapsed until termination of a subsequent-stage step of the two steps of the etching processing.

摘要翻译： 一种等离子体处理装置，其通过使用在减压处理室内形成的等离子体进行蚀刻处理的至少两个步骤对晶片施加蚀刻处理，所述晶片位于真空容器内的处理室内，并且具有 硅构成基板上的掩模和膜结构，所述膜结构包括位于掩模下方的处理目标膜，其中所述等离子体处理装置具有用于处理另一不同晶片的功能， 基于通过检测经过的时间直到蚀刻处理的两个步骤的后续步骤的结束为止，调整在不同晶片的处理中的蚀刻处理的两个步骤的前两级步骤 。

公开(公告)号：US08828184B2

公开(公告)日：2014-09-09

申请号：US13356676

申请日：2012-01-24

申请人： Akira Kagoshima ,  Daisuke Shiraishi ,  Yuji Nagatani

发明人： Akira Kagoshima ,  Daisuke Shiraishi ,  Yuji Nagatani

IPC分类号： C23C16/52 ,  H01L21/3065 ,  H01J37/32

CPC分类号： H01J37/3299 ,  G05B13/00 ,  G05B13/021 ,  G05B13/042 ,  G05B19/4184 ,  H01J37/32449 ,  H01J37/32926 ,  H01J37/32935 ,  H01J2237/3343 ,  H01L22/20 ,  H01L22/26

摘要： A plasma processing apparatus includes a plasma processing chamber, a process monitor which monitors a condition in the plasma processing chamber, an actuator which controls a parameter constituting a plasma processing condition, N+1 correction amount calculating units which calculate a correction amount of a manipulated variable on the basis of a difference between a process monitor value monitored by the process monitor and a desired value of the process monitor and a correlation between the process monitor value and a manipulated variable, which is the parameter, the correlation having been acquired in advance, and N manipulated variable adding units that add a manipulated variable having a priority level next to an N-th manipulated variable. The N-th manipulated variable adding unit defines a correction amount calculated by the N+1-th correction amount calculating unit as the correction amount of an N+1-th manipulated variable.

摘要翻译： 等离子体处理装置包括等离子体处理室，监视等离子体处理室中的状态的处理监视器，控制构成等离子体处理条件的参数的致动器，N + 1校正量计算单元，其计算被操纵的校正量 基于由过程监视器监视的过程监视值和过程监视器的期望值之间的差异以及过程监视值与作为参数的操作变量之间的相关性的变量，预先获取了相关性 ，以及N个操纵变量添加单元，其添加具有与第N个操作变量相邻的优先级的操作变量。 第N操作量增加单元将由第N + 1次校正量计算单元计算的校正量定义为第N + 1个操作变量的校正量。

公开(公告)号：US20120018094A1

公开(公告)日：2012-01-26

申请号：US12856725

申请日：2010-08-16

申请人： Daisuke SHIRAISHI ,  Akira Kagoshima ,  Satomi Inoue ,  Shigeru Nakamoto

发明人： Daisuke SHIRAISHI ,  Akira Kagoshima ,  Satomi Inoue ,  Shigeru Nakamoto

IPC分类号： H01L21/66 ,  H01L21/465

CPC分类号： H01L21/31116 ,  H01J37/32192 ,  H01J37/32972 ,  H01L21/31122

摘要： A plasma processing apparatus for applying an etching processing to a wafer by using at least two steps of the etching processing which operate with plasma formed within a pressure-reduced processing chamber, the wafer being located within the processing chamber inside a vacuum vessel, and having a mask on a silicon-composed substrate and a film structure, the film structure including processing-target films located under the mask, wherein the plasma processing apparatus is equipped with a function for processing another different wafer in such a manner that a processing condition at a precedent-stage step of the two steps of the etching processing in the processing of the different wafer is adjusted based on a result obtained by detecting a time which has elapsed until termination of a subsequent-stage step of the two steps of the etching processing.

摘要翻译： 一种等离子体处理装置，其通过使用在减压处理室内形成的等离子体进行蚀刻处理的至少两个步骤对晶片施加蚀刻处理，所述晶片位于真空容器内的处理室内，并且具有 硅构成基板上的掩模和膜结构，所述膜结构包括位于掩模下方的处理目标膜，其中所述等离子体处理装置具有用于处理另一不同晶片的功能， 基于通过检测经过的时间直到蚀刻处理的两个步骤的后续步骤的结束为止，调整在不同晶片的处理中的蚀刻处理的两个步骤的前两级步骤 。

公开(公告)号：US06830649B2

公开(公告)日：2004-12-14

申请号：US10080539

申请日：2002-02-25

申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Yoshimi Torii ,  Tatehito Usui

发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Yoshimi Torii ,  Tatehito Usui

IPC分类号： C23F1400

CPC分类号： H01L21/67167 ,  H01L21/02071 ,  H01L21/31138 ,  H01L21/67207 ,  H01L21/67745 ,  H01L22/12 ,  H01L2924/0002 ,  Y10S414/139 ,  H01L2924/00

摘要： A semiconductor manufacturing apparatus comprising an integrated measuring instrument for measuring the form or size of the element to be formed into a wafer, an etching unit for etching the wafer by making use of plasma generated under reduced pressure, an ashing unit for ashing the etched wafer, a wetting unit for wetting the etched wafer, a drying unit for drying the wafer which has gone through the wetting treatment, a transport means whereby the wafers housed in a wafer cassette are transported one by one successively to said metrology and each treating unit, and a transport chamber provided with a wafer cassette inlet for receiving a cassette containing sheets of wafer to be etched, in which said metrology, etching unit, ashing unit, wetting unit, drying unit and transport means are connected by a depressurizable transport passage.

摘要翻译： 一种半导体制造装置，包括用于测量要形成晶片的元件的形状或尺寸的集成测量仪器，用于通过利用在减压下产生的等离子体来蚀刻晶片的蚀刻单元，用于灰化蚀刻晶片的灰化单元 用于润湿蚀刻的晶片的润湿单元，用于干燥已经经过润湿处理的晶片的干燥单元，其中容纳在晶片盒中的晶片依次传送到所述计量单元和每个处理单元的传送装置， 以及传送室，其设置有用于接收包含要蚀刻的晶片的盒的晶片盒入口，其中所述测量，蚀刻单元，灰化单元，润湿单元，干燥单元和输送装置通过可减压的输送通道连接。

公开(公告)号：US06771481B2

公开(公告)日：2004-08-03

申请号：US09796494

申请日：2001-03-02

申请人： Ryoji Nishio ,  Seiichiro Kanno ,  Hideyuki Yamamoto ,  Akira Kagoshima

发明人： Ryoji Nishio ,  Seiichiro Kanno ,  Hideyuki Yamamoto ,  Akira Kagoshima

IPC分类号： B23B3128

CPC分类号： H01J37/32082 ,  H01J37/32706 ,  H01J37/3299 ,  Y10T29/49124 ,  Y10T279/23

摘要： A plasma processing apparatus comprises: a body that comprises a vacuum processing chamber with a wafer stage on which a semiconductor wafer is held, a plasma producing unit for producing plasma within the vacuum chamber, and a high frequency source for applying a high frequency bias voltage to the wafer stage. A control unit controls various parameters of the body of the plasma processing apparatus. The control unit comprises a detecting unit for detecting the high frequency voltage or high frequency current applied to the wafer stage and for calculating a difference in phase between the high frequency voltage and the high frequency current, and a unit for obtaining a characteristic of the plasma or an electric characteristic of the plasma processing apparatus based on the detected high frequency voltage, the detected high frequency current, and the obtained difference in phase.

摘要翻译： 一种等离子体处理装置包括：主体，其包括具有保持半导体晶片的晶片台的真空处理室，用于在真空室内产生等离子体的等离子体产生单元和用于施加高频偏置电压的高频源 到晶片台。 控制单元控制等离子体处理装置的主体的各种参数。 控制单元包括用于检测施加到晶片台的高频电压或高频电流并用于计算高频电压和高频电流之间的相位差的检测单元，以及用于获得等离子体的特性的单元 或基于检测到的高频电压，检测到的高频电流和所获得的相位差的等离子体处理装置的电特性。

公开(公告)号：US20100068009A1

公开(公告)日：2010-03-18

申请号：US12388617

申请日：2009-02-19

申请人： Shingo Kimura ,  Shouji Okiguchi ,  Akira Kagoshima ,  Shinji Obama

发明人： Shingo Kimura ,  Shouji Okiguchi ,  Akira Kagoshima ,  Shinji Obama

IPC分类号： H01L21/67 ,  H01L21/00 ,  H01L21/677 ,  H01L21/673

CPC分类号： H01L21/67745 ,  H01L21/67778

摘要： A vacuum processing apparatus includes a plurality of vacuum containers; a vacuumized transfer unit connected with the vacuum containers and having a transfer chamber; a plurality of lock chambers connected to the vacuumized transfer unit; a vacuumized transferring section arranged in the transfer chamber to transfer the sample between each of the lock chambers and each of the processing chambers inside the plurality of vacuum containers; an atmospheric transfer container having a space through which the sample is transferred under the atmospheric pressure; an atmospheric transfer unit arranged in the atmospheric transfer container and adapted to transfer the sample from a cassette; and a controller operative on the basis of schedule information of a plurality of operations to adjust the operations, the information including times of stagnation of the plurality of samples and set therefor.

摘要翻译： 真空处理装置包括多个真空容器; 与真空容器连接并具有传送室的真空转印单元; 连接到所述真空转印单元的多个锁定室; 设置在所述传送室中的抽真空转印部分，用于将所述样品在每个所述锁定室与所述多个真空容器内的所述处理室内传送; 具有空气的大气转移容器，样品在大气压下通过该空间传送; 大气转移单元，布置在大气转移容器中并适于从样品盒传送样品; 以及控制器，其基于多个操作的调度信息进行操作以调整操作，所述信息包括所述多个样本的停滞时间并为此设置。

公开(公告)号：US08731706B2

公开(公告)日：2014-05-20

申请号：US12388617

申请日：2009-02-19

申请人： Shingo Kimura ,  Shouji Okiguchi ,  Akira Kagoshima ,  Shinji Obama

发明人： Shingo Kimura ,  Shouji Okiguchi ,  Akira Kagoshima ,  Shinji Obama

IPC分类号： H01L21/67

CPC分类号： H01L21/67745 ,  H01L21/67778

摘要： A vacuum processing apparatus includes a plurality of vacuum containers; a vacuumized transfer unit connected with the vacuum containers and having a transfer chamber; a plurality of lock chambers connected to the vacuumized transfer unit; a vacuumized transferring section arranged in the transfer chamber to transfer the sample between each of the lock chambers and each of the processing chambers inside the plurality of vacuum containers; an atmospheric transfer container having a space through which the sample is transferred under the atmospheric pressure; an atmospheric transfer unit arranged in the atmospheric transfer container and adapted to transfer the sample from a cassette; and a controller operative on the basis of schedule information of a plurality of operations to adjust the operations, the information including times of stagnation of the plurality of samples and set therefor.

摘要翻译： 真空处理装置包括多个真空容器; 与真空容器连接并具有传送室的真空转印单元; 连接到所述真空转印单元的多个锁定室; 设置在所述传送室中的抽真空转印部分，用于将所述样品在每个所述锁定室与所述多个真空容器内的所述处理室内传送; 具有空气的大气转移容器，样品在大气压下通过该空间传送; 大气转移单元，布置在大气转移容器中并适于从样品盒传送样品; 以及控制器，其基于多个操作的调度信息进行操作以调整操作，所述信息包括所述多个样本的停滞时间并为此设置。

公开(公告)号：US20100258246A1

公开(公告)日：2010-10-14

申请号：US12511220

申请日：2009-07-29

申请人： Takehisa Iwakoshi ,  Masaru Izawa ,  Akira Kagoshima

发明人： Takehisa Iwakoshi ,  Masaru Izawa ,  Akira Kagoshima

IPC分类号： H01L21/3065

CPC分类号： H01J37/3299 ,  H01J37/32935

摘要： A plasma processing system includes a processing chamber provided with a plasma generation unit for applying radio-frequency power to supplied processing gas to generate plasma and a stage for holding workpieces, and a control computer for generating plasma in accordance with preset processing conditions to sequentially apply plasma processing to the workpieces and also for sequentially collecting system parameter values each of which represents a state of the plasma processing. The computer is provided with a record unit for storing, in every predetermined period, a frequency that each of the collected system parameter values deviates from a preset reference value, an occurrence rate calculation unit for calculating, based on the frequency, an occurrence rate that the each of the system parameter values deviates from the reference value, and a comparison unit for comparing the occurrence rate with a preset reference value to diagnose a state of the system.

摘要翻译： 等离子体处理系统包括：处理室，其具有用于向提供的处理气体施加射频功率以产生等离子体的等离子体产生单元和用于保持工件的载物台;以及用于根据预设的处理条件产生等离子体的控制计算机， 对工件进行等离子体处理，并且还用于顺序收集系统参数值，每个系统参数值表示等离子体处理的状态。 计算机设有记录单元，用于在每个预定时间段内存储每个所收集的系统参数值偏离预设参考值的频率;发生率计算单元，用于基于频率计算出发生率 每个系统参数值偏离参考值，以及比较单元，用于将发生率与预设的参考值进行比较，以诊断系统的状态。