公开(公告)号：US20130173042A1

公开(公告)日：2013-07-04

申请号：US13612937

申请日：2012-09-13

申请人： Toshihiro Morisawa ,  Daisuke Shiraishi ,  Satomi Inoue ,  Akira Kagoshima

发明人： Toshihiro Morisawa ,  Daisuke Shiraishi ,  Satomi Inoue ,  Akira Kagoshima

IPC分类号： G05B19/18

CPC分类号： G05B19/4184 ,  G05B2219/32191 ,  G05B2219/45031 ,  Y02P90/14 ,  Y02P90/22

摘要： Semiconductor manufacturing equipment includes: a controller controlling driving and processes of various parts of the semiconductor manufacturing equipment, and a sensor monitoring each physical amount in the semiconductor manufacturing equipment or a status of each chemical response amount; a database; and an arithmetic section executing: processing of reading out equipment data, calculating a correlation matrix between time points based on a plurality of pieces of signal data to be compared, calculating eigen values and eigen vectors from the correlation matrix, and calculating principal component scores by principal component analysis; processing of comparing magnitudes of the eigen values of the principal components, arranging the eigen values in descending order to display a list thereof; and processing of displaying a scatter diagram where the principal component scores of the respective signals are plotted in a feature space selecting the principal component corresponding to the eigen value having a contribution ratio.

摘要翻译： 半导体制造设备包括：控制半导体制造设备的各个部分的驱动和处理的控制器，以及监测半导体制造设备中的每个物理量的传感器或每个化学响应量的状态; 数据库 以及算术部，其执行：读出设备数据，基于要比较的多条信号数据计算时间点之间的相关矩阵，从所述相关矩阵计算特征值和特征向量，以及通过 主成分分析; 对主成分的特征值的大小进行比较处理，按照降序排列本征值，显示其列表; 以及处理显示散射图，其中各个信号的主分量分数被绘制在选择与具有贡献率的本征值相对应的主分量的特征空间中。

公开(公告)号：US20120310403A1

公开(公告)日：2012-12-06

申请号：US13514708

申请日：2010-12-03

申请人： Toshihiro Morisawa ,  Daisuke Shiraishi ,  Satomi Inoue ,  Akira Kagoshima

发明人： Toshihiro Morisawa ,  Daisuke Shiraishi ,  Satomi Inoue ,  Akira Kagoshima

IPC分类号： G05B19/18

CPC分类号： H01J37/32972 ,  H01J37/32935

摘要： Based on a model for determining optical emission intensity values Y at wavelengths from actuator values X of an etching apparatus, X is calculated from Y to achieve preferable Run-to-Run control over Y. A relation between X and Y is defined as a control model (matrix model C1, ratio-constraint model C2) based on an algebraical expression with ΔX as an input and ΔY as an output. In etching process control, ΔX (manipulated volume) is calculated from ΔY (controlled volume) using the control model, based on a non-control optical emission intensity value Y, to set X (S1) for the etching process, during which Y is monitored. Based on an actual value for Y, a non-control optical emission intensity value Y to be used in the next wafer etching process is calculated.

摘要翻译： 基于用于确定来自蚀刻装置的致动器值X的波长的光发射强度值Y的模型，从Y计算X以实现对Y的优选的运行到运行控制.X和Y之间的关系被定义为对照 基于具有＆Dgr; X作为输入的代数表达式的模型（矩阵模型C1，比率约束模型C2）和＆Dgr; Y作为输出。 在蚀刻过程控制中，使用基于非控制光发射强度值Y的控制模型从＆Dgr; Y（受控体积）计算＆Dgr; X（操纵体积）以设定用于蚀刻工艺的X（S1） 在此期间Y被监控。 基于Y的实际值，计算在下一个晶片蚀刻工艺中使用的非控制光发射强度值Y.

公开(公告)号：US20110315661A1

公开(公告)日：2011-12-29

申请号：US13144097

申请日：2009-11-20

申请人： Toshihiro Morisawa ,  Daisuke Shiraishi ,  Satomi Inoue

发明人： Toshihiro Morisawa ,  Daisuke Shiraishi ,  Satomi Inoue

IPC分类号： C23F1/00 ,  C23F1/08 ,  G01J3/28

CPC分类号： G01N21/68 ,  H01J37/32935 ,  H01J37/32972 ,  H05H1/0037

摘要： There is provided an etching apparatus in which, without setting the information of the substance and the chemical reaction, a small number of representative wavelengths can be selected from a waveform at a lot of wavelengths, and an analysis process of etching data which needs large man-hours can be eliminated to efficiently set the monitoring of the etching. The etching apparatus includes: a lot/wafer/step-depending OES-data searching/acquiring function 511 for acquiring a plurality of optical emission intensity waveforms along an etching-treatment time axis; a waveform-change-existence judgment function 521 for judging the existence of the change of the plurality of light emission intensity waveforms; a waveform-correlation-matrix calculating function 522 for calculating a correlation matrix between the optical emission intensity waveforms; a waveform classifying function 523 for classifying the optical emission intensity waveforms into groups; and a representative-waveform selecting function 524 for selecting a representative optical emission intensity waveform from the group.

摘要翻译： 提供了一种蚀刻装置，其中，在不设置物质的信息和化学反应的情况下，可以从大量波长的波形中选择少数代表性波长，并且需要大量人物的蚀刻数据的分析处理 - 可以消除小时以有效地设置蚀刻的监测。 蚀刻装置包括：许多/晶片/逐步依赖的OES数据搜索/获取功能511，用于获取沿蚀刻处理时间轴的多个发光强度波形; 用于判断多个发光强度波形的变化的存在的波形变化存在判断功能521; 用于计算光发射强度波形之间的相关矩阵的波形相关矩阵计算功能522; 波长分类功能523，用于将光发射强度波形分组成组; 以及用于从组中选择代表性的光发射强度波形的代表波形选择功能524。

公开(公告)号：US4894359A

公开(公告)日：1990-01-16

申请号：US200553

申请日：1988-05-31

申请人： Ryuzo Ueno ,  Shinichi Katsura ,  Yoshirou Uchiyama ,  Satomi Inoue

发明人： Ryuzo Ueno ,  Shinichi Katsura ,  Yoshirou Uchiyama ,  Satomi Inoue

IPC分类号： B41M5/30 ,  C07C69/92 ,  B41M5/18

CPC分类号： B41M5/30 ,  C07C69/92 ,  Y10S428/913

摘要： The present invention provides a novel bis(phenoxymethyl)benzene derivative or bis(naphthoxymethyl)benzene derivative, which improves the stability of image on a heat sensitive recording paper composed of a leuco dye and a developer.

公开(公告)号：US09110461B2

公开(公告)日：2015-08-18

申请号：US13612937

申请日：2012-09-13

申请人： Toshihiro Morisawa ,  Daisuke Shiraishi ,  Satomi Inoue ,  Akira Kagoshima

发明人： Toshihiro Morisawa ,  Daisuke Shiraishi ,  Satomi Inoue ,  Akira Kagoshima

IPC分类号： G05B19/18 ,  G05B19/418

CPC分类号： G05B19/4184 ,  G05B2219/32191 ,  G05B2219/45031 ,  Y02P90/14 ,  Y02P90/22

摘要： Semiconductor manufacturing equipment includes: a controller controlling driving and processes of various parts of the semiconductor manufacturing equipment, and a sensor monitoring each physical amount in the semiconductor manufacturing equipment or a status of each chemical response amount; a database; and an arithmetic section executing: processing of reading out equipment data, calculating a correlation matrix between time points based on a plurality of pieces of signal data to be compared, calculating eigen values and eigen vectors from the correlation matrix, and calculating principal component scores by principal component analysis; processing of comparing magnitudes of the eigen values of the principal components, arranging the eigen values in descending order to display a list thereof; and processing of displaying a scatter diagram where the principal component scores of the respective signals are plotted in a feature space selecting the principal component corresponding to the eigen value having a contribution ratio.

摘要翻译： 半导体制造设备包括：控制半导体制造设备的各个部分的驱动和处理的控制器，以及监测半导体制造设备中的每个物理量的传感器或每个化学响应量的状态; 数据库 以及算术部，其执行：读出设备数据，基于要比较的多条信号数据计算时间点之间的相关矩阵，从所述相关矩阵计算特征值和特征向量，以及通过 主成分分析; 对主成分的特征值的大小进行比较处理，按照降序排列本征值，显示其列表; 以及处理显示散射图，其中各个信号的主分量分数被绘制在选择与具有贡献率的本征值相对应的主分量的特征空间中。

公开(公告)号：US08812151B2

公开(公告)日：2014-08-19

申请号：US13479518

申请日：2012-05-24

申请人： Teruo Nakata ,  Keita Nogi ,  Satomi Inoue ,  Michinori Kawaguchi

发明人： Teruo Nakata ,  Keita Nogi ,  Satomi Inoue ,  Michinori Kawaguchi

IPC分类号： G06F7/00 ,  G06F19/00

CPC分类号： G05B19/41865 ,  G05B2219/45032 ,  H01L21/67276 ,  Y02P90/18 ,  Y02P90/20

摘要： An efficient method of controlling transportation in a linear tool type vacuum process device in a state that a length of time required for a process is not stable. For each process chamber, the number of unprocessed wafers that are in process or are being transported to the process chamber is counted, and in deciding a transport destination of a wafer, when the number of unprocessed wafers is equal to or larger than a charge limit amount, a transport destination of a wafer is decided excluding the process chamber. Also, a wafer holding mechanism on a transport path to a process chamber is reserved, and a transport destination of a processed member to be transported next is decided according to a status of reservation.

摘要翻译： 一种在线性工具式真空处理装置中控制运输的有效方法，其处理过程所需的时间长度不稳定。 对于每个处理室，计数正在处理或正在运送到处理室的未处理晶片的数量，并且在确定晶片的传送目的地时，当未处理的晶片的数量等于或大于充电极限 除了处理室之外，决定晶片的传送目的地。 此外，保留了到处理室的传送路径上的晶片保持机构，并且根据预约状态来决定随后要传送的被处理部件的传送目的地。

公开(公告)号：US08486290B2

公开(公告)日：2013-07-16

申请号：US13144097

申请日：2009-11-20

申请人： Toshihiro Morisawa ,  Daisuke Shiraishi ,  Satomi Inoue

发明人： Toshihiro Morisawa ,  Daisuke Shiraishi ,  Satomi Inoue

IPC分类号： G01R31/00

CPC分类号： G01N21/68 ,  H01J37/32935 ,  H01J37/32972 ,  H05H1/0037

摘要： There is provided an etching apparatus in which, without setting the information of the substance and the chemical reaction, a small number of representative wavelengths can be selected from a waveform at a lot of wavelengths, and an analysis process of etching data which needs large man-hours can be eliminated to efficiently set the monitoring of the etching. The etching apparatus includes: a lot/wafer/step-depending OES-data searching/acquiring function 511 for acquiring a plurality of optical emission intensity waveforms along an etching-treatment time axis; a waveform-change-existence judgment function 521 for judging the existence of the change of the plurality of light emission intensity waveforms; a waveform-correlation-matrix calculating function 522 for calculating a correlation matrix between the optical emission intensity waveforms; a waveform classifying function 523 for classifying the optical emission intensity waveforms into groups; and a representative-waveform selecting function 524 for selecting a representative optical emission intensity waveform from the group.

摘要翻译： 提供了一种蚀刻装置，其中，在不设置物质的信息和化学反应的情况下，可以从大量波长的波形中选择少数代表性波长，并且需要大量人物的蚀刻数据的分析处理 - 可以消除小时以有效地设置蚀刻的监测。 蚀刻装置包括：许多/晶片/逐步依赖的OES数据搜索/获取功能511，用于获取沿蚀刻处理时间轴的多个发光强度波形; 用于判断多个发光强度波形的变化的存在的波形变化存在判断功能521; 用于计算光发射强度波形之间的相关矩阵的波形相关矩阵计算功能522; 波形分类功能523，用于将光发射强度波形分组成组; 以及用于从该组中选择代表性的光发射强度波形的代表波形选择功能524。

公开(公告)号：US20120018094A1

公开(公告)日：2012-01-26

申请号：US12856725

申请日：2010-08-16

申请人： Daisuke SHIRAISHI ,  Akira Kagoshima ,  Satomi Inoue ,  Shigeru Nakamoto

发明人： Daisuke SHIRAISHI ,  Akira Kagoshima ,  Satomi Inoue ,  Shigeru Nakamoto

IPC分类号： H01L21/66 ,  H01L21/465

CPC分类号： H01L21/31116 ,  H01J37/32192 ,  H01J37/32972 ,  H01L21/31122

摘要： A plasma processing apparatus for applying an etching processing to a wafer by using at least two steps of the etching processing which operate with plasma formed within a pressure-reduced processing chamber, the wafer being located within the processing chamber inside a vacuum vessel, and having a mask on a silicon-composed substrate and a film structure, the film structure including processing-target films located under the mask, wherein the plasma processing apparatus is equipped with a function for processing another different wafer in such a manner that a processing condition at a precedent-stage step of the two steps of the etching processing in the processing of the different wafer is adjusted based on a result obtained by detecting a time which has elapsed until termination of a subsequent-stage step of the two steps of the etching processing.

摘要翻译： 一种等离子体处理装置，其通过使用在减压处理室内形成的等离子体进行蚀刻处理的至少两个步骤对晶片施加蚀刻处理，所述晶片位于真空容器内的处理室内，并且具有 硅构成基板上的掩模和膜结构，所述膜结构包括位于掩模下方的处理目标膜，其中所述等离子体处理装置具有用于处理另一不同晶片的功能， 基于通过检测经过的时间直到蚀刻处理的两个步骤的后续步骤的结束为止，调整在不同晶片的处理中的蚀刻处理的两个步骤的前两级步骤 。

公开(公告)号：US20120303158A1

公开(公告)日：2012-11-29

申请号：US13479518

申请日：2012-05-24

申请人： Teruo NAKATA ,  Keita Nogi ,  Satomi Inoue ,  Michinori Kawaguchi

发明人： Teruo NAKATA ,  Keita Nogi ,  Satomi Inoue ,  Michinori Kawaguchi

IPC分类号： H01L21/677 ,  G06F7/00

CPC分类号： G05B19/41865 ,  G05B2219/45032 ,  H01L21/67276 ,  Y02P90/18 ,  Y02P90/20

摘要： An efficient method of controlling transportation in a linear tool type vacuum process device in a state that a length of time required for a process is not stable. For each process chamber, the number of unprocessed wafers that are in process or are being transported to the process chamber is counted, and in deciding a transport destination of a wafer, when the number of unprocessed wafers is equal to or larger than a charge limit amount, a transport destination of a wafer is decided excluding the process chamber. Also, a wafer holding mechanism on a transport path to a process chamber is reserved, and a transport destination of a processed member to be transported next is decided according to a status of reservation.

摘要翻译： 一种在线性工具式真空处理装置中控制运输的有效方法，其处理过程所需的时间长度不稳定。 对于每个处理室，计数正在处理或正在运送到处理室的未处理晶片的数量，并且在确定晶片的传送目的地时，当未处理的晶片的数量等于或大于充电极限 除了处理室之外，决定晶片的传送目的地。 此外，保留了到处理室的传送路径上的晶片保持机构，并且根据预约状态来决定随后要传送的被处理部件的传送目的地。

公开(公告)号：US08992721B2

公开(公告)日：2015-03-31

申请号：US12696571

申请日：2010-01-29

申请人： Akira Kagoshima ,  Daisuke Shiraishi ,  Satomi Inoue ,  Shigeru Nakamoto ,  Shoji Ikuhara ,  Toshihiro Morisawa

发明人： Akira Kagoshima ,  Daisuke Shiraishi ,  Satomi Inoue ,  Shigeru Nakamoto ,  Shoji Ikuhara ,  Toshihiro Morisawa

IPC分类号： G05B13/04 ,  H01J37/32

CPC分类号： H01J37/32926 ,  G05B13/048 ,  G05B2219/31357 ,  H01J37/32935

摘要： A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, a process model indicating variation of the state of a process processing apparatus can be added to a control loop in such run-to-run control that process conditions are changed according to each wafer process, so that stable processed results can be obtained even when variation occurs in processes.

摘要翻译： 一种等离子体处理装置，包括：监视器，其监视在等离子体处理时产生的处理量; 监视值估计单元，其具有监视量变化模型，用于根据处理样本的数量存储处理量的监视值的变化，并且通过参考监视量变化估计下一个样本的处理的监视值 楷模; 以及控制量计算单元，其存储用于控制真空处理装置的处理量的控制量与监视值之间的关系，并且基于估计监视值与目标值的偏差来计算控制量，从而控制 下一个试样的加工量。 因此，表示处理处理装置的状态的变化的处理模型可以在这样的运行控制中被添加到控制回路中，即，根据每个晶片处理改变处理条件，从而甚至可以获得稳定的处理结果 当过程发生变化时。