公开(公告)号：US20120044433A1

公开(公告)日：2012-02-23

申请号：US13278219

申请日：2011-10-21

申请人： Yoshiharu HIRAKATA ,  Takeshi NISHI ,  Shunpei YAMAZAKI

发明人： Yoshiharu HIRAKATA ,  Takeshi NISHI ,  Shunpei YAMAZAKI

IPC分类号： G02F1/1337

CPC分类号： G02F1/13454 ,  G02F1/1339 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248

摘要： In an active matrix semiconductor display device in which pixel TFTs and driver circuit TFT are formed on the same substrate in an integral manner, the cell gap is controlled by gap retaining members that are disposed between a pixel area and driver circuit areas. This makes it possible to provide a uniform cell thickness profile over the entire semiconductor display device. Further, since conventional grainy spacers are not used, stress is not imposed on the driver circuit TFTs when a TFT substrate and an opposed substrate are bonded together. This prevents the driver circuit TFTs from being damaged.

摘要翻译： 在其中像素TFT和驱动电路TFT以整体方式形成在同一基板上的有源矩阵半导体显示装置中，通过设置在像素区域和驱动电路区域之间的间隙保持构件来控制单元间隙。 这使得可以在整个半导体显示装置上提供均匀的电池厚度分布。 此外，由于不使用常规的颗粒状间隔物，当TFT基板和相对的基板接合在一起时，驱动电路TFT不施加应力。 这防止驱动电路TFT被损坏。

公开(公告)号：US20120040501A1

公开(公告)日：2012-02-16

申请号：US13285256

申请日：2011-10-31

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L21/8238 ,  H01L21/336

CPC分类号： H01L27/3262 ,  H01L21/28114 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/3244 ,  H01L27/3248 ,  H01L29/42384 ,  H01L29/66492 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/5256 ,  H01L2029/7863 ,  H01L2227/32

摘要： There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low concentration through the first gate electrode. In the semiconductor layer, two kinds of n−-type impurity regions are formed between a channel formation region and n+-type impurity regions. Some of the n−-type impurity regions overlap with a gate electrode, and the other n−-type impurity regions do not overlap with the gate electrode. Since the two kinds of n−-type impurity regions are formed, an off current can be reduced, and deterioration of characteristics can be suppressed.

摘要翻译： 提供了具有改进的可靠性的薄膜晶体管。 栅电极包括具有锥形部分的第一栅电极和宽度比第一栅电极窄的第二栅电极。 半导体层通过第一栅电极掺杂低浓度的磷。 在半导体层中，在沟道形成区域和n +型杂质区域之间形成两种n型杂质区域。 n型杂质区域中的一些与栅电极重叠，其他n型杂质区域与栅电极不重叠。 由于形成了两种n型杂质区，所以可以减少截止电流，并且可以抑制特性劣化。

公开(公告)号：US20120037993A1

公开(公告)日：2012-02-16

申请号：US13280716

申请日：2011-10-25

申请人： Shunpei YAMAZAKI ,  Yuugo Goto ,  Tsutomu Murakawa

发明人： Shunpei YAMAZAKI ,  Yuugo Goto ,  Tsutomu Murakawa

IPC分类号： H01L29/78 ,  H01L29/06

CPC分类号： H01L27/1218

摘要： A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate having flexibility; a semiconductor film including a channel formation region and an impurity region over the first island-like reinforcement film; a first conductive film over the channel formation region with a gate insulating film interposed therebetween; a second island-like reinforcement film covering the first conductive film and the gate insulating film.

摘要翻译： 即使在施加诸如弯曲的外力并且在半导体器件中产生应力的情况下，诸如晶体管的元件的损坏也减小的半导体器件。 半导体器件包括在具有柔性的衬底上的第一岛状增强膜; 包括第一岛状增强膜上的沟道形成区域和杂质区域的半导体膜; 在沟道形成区域上的第一导电膜，其间插入有栅极绝缘膜; 覆盖第一导电膜和栅极绝缘膜的第二岛状加强膜。

公开(公告)号：US20120032159A1

公开(公告)日：2012-02-09

申请号：US13277478

申请日：2011-10-20

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Masaharu NAGAI ,  Yutaka MATSUDA ,  Kengo AKIMOTO ,  Gen FUJII ,  Tetsuji YAMAGUCHI

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Masaharu NAGAI ,  Yutaka MATSUDA ,  Kengo AKIMOTO ,  Gen FUJII ,  Tetsuji YAMAGUCHI

IPC分类号： H01L51/52

CPC分类号： H01L51/529 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/66757 ,  H01L51/5206 ,  H01L51/5246 ,  H01L2251/5315 ,  H01L2251/5323

摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant, planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.

摘要翻译： 本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。 根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。 显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，在耐热平坦化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁 第一电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。

公开(公告)号：US20120025186A1

公开(公告)日：2012-02-02

申请号：US13270416

申请日：2011-10-11

申请人： Shunpei YAMAZAKI ,  Takeshi NISHI ,  Mayumi MIZUKAMI ,  Hisao IKEDA

发明人： Shunpei YAMAZAKI ,  Takeshi NISHI ,  Mayumi MIZUKAMI ,  Hisao IKEDA

IPC分类号： H01L51/52 ,  H01L51/54

CPC分类号： H01L27/3244 ,  H01L27/3211 ,  H01L27/3276 ,  H01L51/0059 ,  H01L51/5012 ,  H01L51/5016 ,  H01L51/5036 ,  H01L51/5048 ,  H01L51/56 ,  H01L2251/5315 ,  H01L2251/558 ,  Y10S428/917

摘要： The luminance of different colors of light emitted from EL elements in a pixel portion of a light emitting device is equalized and the luminance of light emitted from the EL elements is raised. The pixel portion of the light emitting device has EL elements whose EL layers contain triplet compounds and EL elements whose EL layers contain singlet compounds in combination. The luminance of light emitted from the plural EL elements is thus equalized. Furthermore, a hole transporting layer has a laminate structure to thereby cause the EL elements to emit light of higher luminance.

摘要翻译： 从发光元件的像素部分的EL元件发出的不同颜色的光的亮度被均衡，从EL元件发出的光的亮度升高。 发光器件的像素部分具有EL层，其EL层含有三重态化合物，EL层包含单层化合物的EL层。 因此，从多个EL元件发射的光的亮度相等。 此外，空穴传输层具有层叠结构，从而使EL元件发射更高亮度的光。

公开(公告)号：US20120021540A1

公开(公告)日：2012-01-26

申请号：US13244397

申请日：2011-09-24

申请人： Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Yohei MONMA ,  Takahiro IGUCHI ,  Hiroki ADACHI ,  Shunpei YAMAZAKI

发明人： Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Yohei MONMA ,  Takahiro IGUCHI ,  Hiroki ADACHI ,  Shunpei YAMAZAKI

IPC分类号： H01L21/66 ,  H01L31/0203

CPC分类号： H01L27/14625 ,  H01L27/14806 ,  H01L31/075

摘要： A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.

摘要翻译： 半导体器件包括多个半导体集成电路，该多个半导体集成电路与结构体结合，纤维体浸渍有机树脂。 多个半导体集成电路设置在形成在结构体中的开口处，并且各自包括光电转换元件，具有阶梯侧的透光基板，第一表面侧的突出部的宽度小于 设置在透光基板的第二表面上的半导体集成电路部分和覆盖透光基板的第一表面和侧表面的彩色透光树脂层。 多个半导体集成电路包括不同颜色的彩色透光树脂层。

公开(公告)号：US20120019567A1

公开(公告)日：2012-01-26

申请号：US13184587

申请日：2011-07-18

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC分类号： G09G3/36 ,  G09G5/02 ,  G09G5/10

CPC分类号： G09G3/3677 ,  G09G3/3413 ,  G09G3/342 ,  G09G3/3688 ,  G09G2310/0205 ,  G09G2310/0218 ,  G09G2310/0235 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2310/08 ,  G09G2320/0242

摘要： To improve the image quality of a liquid crystal display device. In the liquid crystal display device, writing of an image signal and the turning on the backlights are not sequentially performed in the entire pixel portion but are sequentially performed per specific region of the pixel portion. Thus, it is possible to increase the frequency of input of an image signal to each pixel of the liquid crystal display device. Accordingly, deterioration of display such as color break generated in the liquid crystal display device can be suppressed, and the image quality can be improved.

摘要翻译： 提高液晶显示装置的图像质量。 在液晶显示装置中，在整个像素部分中不顺序地执行图像信号的写入和背光的转动，而是在像素部分的每个特定区域依次执行。 因此，可以将图像信号的输入频率增加到液晶显示装置的每个像素。 因此，能够抑制液晶显示装置中产生的色差等显示的劣化，能够提高图像质量。

公开(公告)号：US20120001954A1

公开(公告)日：2012-01-05

申请号：US13167019

申请日：2011-06-23

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kouhei TOYOTAKA

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kouhei TOYOTAKA

IPC分类号： G09G5/10 ,  G09G3/36

CPC分类号： G09G3/3406 ,  G09G3/2025 ,  G09G3/3413 ,  G09G3/3607 ,  G09G3/3659 ,  G09G2300/0456 ,  G09G2330/021

摘要： A liquid crystal display device comprising a backlight and a pixel portion including first to 2n-th scan lines, wherein, in a first case of expressing a color image, first pixels controlled by the first to n-th scan lines are configured to express a first image using at least one of first to third hues supplied in a first rotating order, and second pixels controlled by the (n+1)-th to 2n-th scan lines are configured to express a second image using at least one of the first to third hues supplied in a second rotating order, wherein, in a second case of expressing a monochrome image, the first and second pixels controlled by the first to 2n-th scan lines are configured to express the monochrome image by external light reflected by the reflective pixel electrode, and wherein the first rotating order is different from the second rotating order.

摘要翻译： 一种液晶显示装置，包括背光源和包括第一至第2n扫描线的像素部分，其中，在表示彩色图像的第一种情况下，由第一至第n扫描线控制的第一像素被配置为表示 使用以第一旋转顺序提供的第一至第三色调中的至少一个色调的第一图像，以及由第（n + 1）至第2n扫描线控制的第二像素，被配置为使用至少一个 第一至第三色调以第二旋转顺序提供，其中，在表示单色图像的第二种情况下，由第一至第2n扫描线控制的第一和第二像素被配置为通过由 所述反射像素电极，并且其中所述第一旋转顺序与所述第二旋转顺序不同。

公开(公告)号：US20110309368A1

公开(公告)日：2011-12-22

申请号：US13223582

申请日：2011-09-01

申请人： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

发明人： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

IPC分类号： H01L33/08

CPC分类号： H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

摘要： Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

摘要翻译： 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。

公开(公告)号：US20110284839A1

公开(公告)日：2011-11-24

申请号：US13107283

申请日：2011-05-13

申请人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Kosei NODA

发明人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Kosei NODA

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/385 ,  H01L27/1225 ,  H01L29/7869

摘要： It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. An oxide semiconductor film serving as a channel formation region of a transistor is formed by a sputtering method at a temperature higher than 200° C., so that the number of water molecules eliminated from the oxide semiconductor film can be 0.5/nm3 or less according to thermal desorption spectroscopy. A substance including a hydrogen atom such as hydrogen, water, a hydroxyl group, or hydride which causes variation in the electric characteristics of a transistor including an oxide semiconductor is prevented from entering the oxide semiconductor film, whereby the oxide semiconductor film can be highly purified and made to be an electrically i-type (intrinsic) semiconductor.

摘要翻译： 本发明的目的是提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。 通过溅射法在高于200℃的温度下形成用作晶体管的沟道形成区的氧化物半导体膜，从氧化物半导体膜中除去的水分子数可以为0.5nm / nm 3以下 到热解吸光谱。 包含氢原子的物质，例如氢，水，羟基或氢化物，其导致包括氧化物半导体的晶体管的电特性发生变化，从而防止氧化物半导体膜进入氧化物半导体膜，由此氧化物半导体膜可以被高度纯化 并制成电i型（本征）半导体。