公开(公告)号：US09520697B2

公开(公告)日：2016-12-13

申请号：US14600506

申请日：2015-01-20

Applicant: Soraa Laser Diode, Inc.

Inventor： Dan Steigerwald ,  Melvin McLaurin ,  Eric Goutain ,  Alexander Sztein ,  Po Shan Hsu ,  Paul Rudy ,  James W. Raring

IPC: H01L21/00 ,  H01S5/40 ,  H01S5/02 ,  H01S5/343 ,  H01S5/22 ,  H01S5/042 ,  H01S5/00

CPC classification number: H01S5/4087 ,  H01S5/005 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/34333 ,  H01S5/4012 ,  H01S5/4031 ,  H01S5/4056 ,  H01S5/4093

Abstract: A method for manufacturing a multi-emitter laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Abstract translation: 一种用于制造多发射体激光二极管器件的方法，包括提供具有表面区域并形成覆盖在表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，活性区域包括至少一层有源层， n型包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

公开(公告)号：US20160294162A1

公开(公告)日：2016-10-06

申请号：US15176076

申请日：2016-06-07

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  Dan Steigerwald ,  James W. Raring

IPC: H01S5/40 ,  H01S5/02 ,  H01S5/323 ,  H01S5/22

CPC classification number: H01S5/4093 ,  H01L24/83 ,  H01L24/95 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01S5/0203 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/32325 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

公开(公告)号：US09379525B2

公开(公告)日：2016-06-28

申请号：US14312427

申请日：2014-06-23

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  Dan Steigerwald ,  James W. Raring

IPC: H01L21/00 ,  H01S5/40 ,  H01S5/02 ,  H01S5/30 ,  H01L23/00

CPC classification number: H01S5/4093 ,  H01L24/83 ,  H01L24/95 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01S5/0203 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/32325 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层 包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

公开(公告)号：US09246311B1

公开(公告)日：2016-01-26

申请号：US14534636

申请日：2014-11-06

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Po Shan Hsu ,  Alexander Sztein

IPC: H01S5/34 ,  H01S5/343 ,  H01S5/042 ,  H01S5/22 ,  H01S5/20 ,  H01S5/02 ,  H01S5/323 ,  H01S5/30

CPC classification number: H01S5/34333 ,  H01S5/0206 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/0224 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/30 ,  H01S5/32308 ,  H01S2301/173

Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.

Abstract translation: 一种制造激光二极管器件的方法包括提供含有氮和氮的衬底构件，其包括表面区域，覆盖表面区域的剥离材料，n型含镓和氮的材料; 覆盖n型含镓和氮的材料的有源区，p型含镓和氮的材料; 以及覆盖所述p型含镓和氮的材料的第一透明导电氧化物材料以及覆盖所述第一透明导电氧化物材料的界面区域。 该方法包括将界面区域粘合到手柄基板上，并将释放材料经受能量源以引发含镓和氮的衬底构件的释放。

公开(公告)号：US09209596B1

公开(公告)日：2015-12-08

申请号：US14175622

申请日：2014-02-07

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

IPC: H01L21/302 ,  H01S5/00 ,  H01L29/20 ,  H01L33/16

CPC classification number: H01S5/34333 ,  H01L24/29 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/50 ,  H01S5/00 ,  H01S5/0202 ,  H01S5/0206 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202

Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between reference crystal orientation and the selected direction of the first handle substrate; and a processed region formed overlying each of the substrates configured concurrently while being bonded to the first handle substrate. Depending upon the embodiment, the processed region can include any combination of the aforementioned processing steps and/or steps.

Abstract translation: 在一个实例中，本发明提供一种含镓和氮的多层结构及相关方法。 该结构具有多个含镓和氮的半导体衬底，每个含镓和氮的半导体衬底（“衬底”）具有覆盖每个衬底的顶侧的多个外延生长层。 该结构对于每个基板具有参考晶体方向的取向。 该结构具有耦合到每个基板的第一手柄基板，使得每个基板与沿第一手柄基板的选定方向配置的空间区域对齐，该空间区域具有比总背面区域 多个基板被布置成覆盖在第一手柄基板上的平铺构造。 每个基板的参考晶体方向在10度以内平行于选定方向的空间区域。 该结构具有第一接合介质，其设置在第一手柄基板和每个基板之间，同时保持参考晶体取向与第一手柄基板的选定方向之间的对准; 以及被形成为覆盖在被结合到第一手柄基板的同时构成的每个基板的处理区域。 根据实施例，经处理的区域可以包括上述处理步骤和/或步骤的任何组合。