Abstract:
A method of making a solid layer of a semiconducting material involves selecting a mold having a leading edge thickness and a different trailing edge thickness such that in respective plots of solid layer thickness versus effective submersion time for submersion of the leading and trailing edges into molten semiconducting material, a thickness of the solid layer adjacent to the leading and trailing edges are substantially equal. The mold is submersed into and withdrawn from the molten semiconducting material to form a solid layer of semiconducting material over an external surface of the mold.
Abstract:
A system and method are described herein for self-referencing a sensor that is used to detect a biomolecular binding event and/or kinetics which occur in a sample solution flowing along side a reference solution in a micron-sized deep flow channel.
Abstract:
Composite carbon electrodes for use in, for example, Capacitive Deionization (CDI) of a fluid stream or, for example, an electric double layer capacitor (EDLC) are described. Methods of making the composite carbon electrodes are also described. The composite carbon electrode comprises an electrically conductive porous matrix comprising carbon; and an electric double layer capacitor, comprising an activated carbonized material, dispersed throughout the pore volume of the electrically conductive porous matrix.
Abstract:
A thin film battery comprises a substrate, anode and cathode current collector layers formed over the substrate, anode and cathode layers formed over and in electrical contact with respective ones of the current collector layers, and an electrolyte layer formed between the anode and cathode layers. The thin film battery further comprises a barrier layer formed from a material such as tin oxide, tin phosphate, tin fluorophosphate, chalcogenide glass, tellurite glass or borate glass. The barrier layer is configured to encapsulate the thin film battery layers and substantially inhibit or prevent exposure of the thin film battery layers to air or moisture.
Abstract:
A method for treating semiconducting materials is disclosed. In the disclosed method, a semiconducting material having a crystalline structure is provided, at least a portion of the semiconducting material is exposed to a heat source to create a melt pool, and the semiconducting material is then cooled. Semiconducting materials treated by the method are also disclosed.
Abstract:
Feed materials are melted in a furnace to form a glass melt at a first temperature T1, the glass melt containing at least one fining agent. The glass melt is cooled to a second temperature T2 less than T1, and an oxygen-containing gas is bubbled through the cooled melt. The glass melt is then re-heated to a third temperature T3 equal to or greater than the first temperature T1.
Abstract:
A method and apparatus for providing a uniform coating thickness along an axial direction within an internal portion of a substrate tube is disclosed. A gas delivery unit is configured to coat the internal portion of the substrate tube. The gas delivery unit includes an insert. At least one of an inner diameter of the insert, a length of the insert, a gap between the insert and the substrate tube, and a flow of the gas mixture delivered to the substrate tube is configured to provide the uniform coating thickness along the axial direction.