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    Thin Film Anisotropic Magnetoresistor Device and Formation
    52.
    发明申请
    Thin Film Anisotropic Magnetoresistor Device and Formation 有权

    公开(公告)号：US20240407268A1

    公开(公告)日：2024-12-05

    申请号：US18804178

    申请日：2024-08-14

    Applicant: Texas Instruments Incorporated

    Inventor： Fuchao Wang ,  Christopher Eric Brannon ,  William David French ,  Dok Won Lee

    IPC: H10N50/01 ,  G01R33/00 ,  G01R33/09 ,  H01L21/306 ,  H10N50/10 ,  H10N50/80 ,  H10N59/00

    Abstract: Apparatus, and their methods of manufacture, including an integrated circuit device having metallization layers for interconnecting underlying electronic devices. Contacts contact conductors of an uppermost one of the metallization layers. A planarized first dielectric layer covers the contacts and the uppermost one of the metallization layers. An anisotropic magnetoresistive (AMR) stack is on the first dielectric layer between vertically aligned portions of an etch stop layer formed on the first dielectric layer and a second dielectric layer formed on the etch stop layer. Vias extend through the first dielectric layer to electrically connect the AMR stack and the contacts. A chemical-mechanical planarization (CMP) stop layer is on the AMR stack. A third dielectric layer is on the CMP stop layer. A passivation layer contacts the second dielectric layer portions, the third dielectric layer, and each opposing end of the AMR stack and the CMP stop layer.

    HALL SENSOR WITH MAGNETIC FLUX CONCENTRATOR
    53.
    发明公开
    HALL SENSOR WITH MAGNETIC FLUX CONCENTRATOR 审中-公开

    公开(公告)号：US20240329164A1

    公开(公告)日：2024-10-03

    申请号：US18193099

    申请日：2023-03-30

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Dok Won Lee ,  Keith Ryan Green ,  Fanping Sui ,  Charles Parkhurst

    IPC: G01R33/07 ,  G01R33/00 ,  H10N52/01 ,  H10N52/80

    CPC classification number: G01R33/077 ,  G01R33/0011 ,  H10N52/01 ,  H10N52/80

    Abstract: The present disclosure generally relates to magnetic field sensors with magnetic flux concentrators, and more particularly, to Hall sensors (which may be vertical or in-plane field Hall sensors) with magnetic flux concentrators. In an example, a sensor device includes a semiconductor die, a first magnetic flux concentrator, and a second magnetic flux concentrator. The semiconductor die includes a semiconductor substrate and an interconnect structure. The semiconductor substrate includes a Hall sensor in a semiconductor material. The interconnect structure is over the semiconductor substrate. The first magnetic flux concentrator is over the semiconductor die. The second magnetic flux concentrator is over the semiconductor die. At least part of the Hall sensor is laterally between the first magnetic flux concentrator and the second magnetic flux concentrator.

    SEMICONDUCTOR INTEGRATED FLUXGATE DEVICE SHIELDED BY DISCRETE MAGNETIC PLATE
    56.
    发明公开
    SEMICONDUCTOR INTEGRATED FLUXGATE DEVICE SHIELDED BY DISCRETE MAGNETIC PLATE 审中-公开

    公开(公告)号：US20230243874A1

    公开(公告)日：2023-08-03

    申请号：US18295788

    申请日：2023-04-04

    Applicant: Texas Instruments Incorporated

    Inventor： Dok Won Lee

    IPC: G01R15/18 ,  G01R19/00 ,  H01L23/544

    CPC classification number: G01R15/183 ,  G01R19/0092 ,  H01L23/544 ,  H01L23/49805

    Abstract: A current-sensing system includes a conductor for carrying a first electrical current generating a first magnetic field. A device, spaced from the conductor by a clearance, includes a semiconductor integrated circuit die in a package. The semiconductor integrated circuit die includes at least one elongated bar of a first ferromagnetic material magnetized by the first magnetic field; a sensor comprising a first coil wrapped around the at least one elongated bar to sense the bar's magnetization; and an electronic driver creating a second electrical current flowing through a second coil wrapped around the at least one elongated bar generating a second magnetic field to compensate the at least one bar's magnetization. The package has a first outer surface free of device terminals. A discrete plate of a second ferromagnetic material is positioned in the clearance and is conformal with the first outer surface of the package.

    Semiconductor integrated fluxgate device shielded by discrete magnetic plate
    57.
    发明授权
    Semiconductor integrated fluxgate device shielded by discrete magnetic plate 有权

    公开(公告)号：US11619658B2

    公开(公告)日：2023-04-04

    申请号：US15836534

    申请日：2017-12-08

    Applicant: Texas Instruments Incorporated

    Inventor： Dok Won Lee

    IPC: G01R15/18 ,  G01R19/00 ,  H01L23/544 ,  H01L23/498 ,  H01L23/31

    Abstract: A current-sensing system includes a conductor for carrying a first electrical current generating a first magnetic field. A device, spaced from the conductor by a clearance, includes a semiconductor integrated circuit die in a package. The semiconductor integrated circuit die includes at least one elongated bar of a first ferromagnetic material magnetized by the first magnetic field; a sensor comprising a first coil wrapped around the at least one elongated bar to sense the bar's magnetization; and an electronic driver creating a second electrical current flowing through a second coil wrapped around the at least one elongated bar generating a second magnetic field to compensate the at least one bar's magnetization. The package has a first outer surface free of device terminals. A discrete plate of a second ferromagnetic material is positioned in the clearance and is conformal with the first outer surface of the package.

    MULTI-SITE CONCURRENT WAFER PROBE MAGNETIC CIRCUIT TESTING
    58.
    发明申请
    MULTI-SITE CONCURRENT WAFER PROBE MAGNETIC CIRCUIT TESTING 有权

    公开(公告)号：US20210356497A1

    公开(公告)日：2021-11-18

    申请号：US17313657

    申请日：2021-05-06

    Applicant: Texas Instruments Incorporated

    Inventor： Xinkun Huang ,  Dok Won Lee ,  Christopher Michael Ledbetter ,  Bret Alan Dahl ,  Roy Deidrick Solomon

    IPC: G01R1/073 ,  G01R1/04 ,  G01R33/07

    Abstract: A wafer probe test system having a probe card with a probe head, a rotary magnet, a magnetic sensor positioned to sense the magnetic field of the rotary magnet and a controller coupled to the probe card, where the probe head has probe needles to engage features of test sites of a wafer in a wafer plane of orthogonal first and second directions, and the rotary magnet is rotatable around an axis of a third direction to provide a magnetic field to the wafer, in which the controller includes a model of magnetic flux density in the first, second and third directions at the respective test sites of the wafer as a function of a rotational angle of the rotary magnet, a probe needle height along the third direction and a measured magnetic flux density of the magnetic sensor.

    High performance fluxgate device
    59.
    发明授权
    High performance fluxgate device 有权

    公开(公告)号：US10718826B2

    公开(公告)日：2020-07-21

    申请号：US14557611

    申请日：2014-12-02

    Applicant: Texas Instruments Incorporated

    Inventor： Mona M. Eissa ,  Dok Won Lee

    IPC: G01R33/04 ,  G01R33/00

    Abstract: An integrated circuit includes a fluxgate magnetometer. The magnetic core of the fluxgate magnetometer is encapsulated with a layer of encapsulant of a nonmagnetic metal or a nonmagnetic alloy. The layer of encapsulate provides stress relaxation between the magnetic core material and the surrounding dielectric. A method for forming an integrated circuit has the magnetic core of a fluxgate magnetometer encapsulated with a layer of a nonmagnetic metal or nonmagnetic alloy to eliminate delamination and to substantially reduce cracking of the dielectric that surrounds the magnetic core.

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