公开(公告)号：US07928438B2

公开(公告)日：2011-04-19

申请号：US11984467

申请日：2007-11-19

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Akiharu Miyanaga ,  Yasushi Ogata

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Akiharu Miyanaga ,  Yasushi Ogata

IPC分类号： H01L29/04 ,  H01L29/76

CPC分类号： H01L29/78675 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/3221 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78654 ,  Y10S438/973

摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.

摘要翻译： 在通过利用催化剂元素使无定形半导体薄膜结晶之后，通过在含有卤素元素的气氛中进行热处理来除去催化剂元素。 得到的晶体半导体薄膜显示{110}取向。 由于单个晶粒具有大致相等的取向，所以晶体半导体薄膜基本上不具有晶界，并且具有被认为是单晶的结晶度或者被认为是如此。

公开(公告)号：US20080087894A1

公开(公告)日：2008-04-17

申请号：US11984467

申请日：2007-11-19

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Akiharu Miyanaga ,  Yasushi Ogata

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Akiharu Miyanaga ,  Yasushi Ogata

IPC分类号： H01L29/04

CPC分类号： H01L29/78675 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/3221 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78654 ,  Y10S438/973

摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.

摘要翻译： 在通过利用催化剂元素使无定形半导体薄膜结晶之后，通过在含有卤素元素的气氛中进行热处理来除去催化剂元素。 得到的晶体半导体薄膜显示{110}取向。 由于单个晶粒具有大致相等的取向，所以晶体半导体薄膜基本上不具有晶界，并且具有被认为是单晶的结晶度或者被认为是如此。

公开(公告)号：US07202119B2

公开(公告)日：2007-04-10

申请号：US10914117

申请日：2004-08-10

申请人： Shunpei Yamazaki ,  Toru Mitsuki

发明人： Shunpei Yamazaki ,  Toru Mitsuki

IPC分类号： H01L21/84

CPC分类号： H01L27/12 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： An orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is increased, a distortion thereof is suppressed, and a TFT using such a crystalline semiconductor film is provided. At the time of formation of the amorphous semiconductor film (102) or after the formation thereof, a noble gas element, typically, argon is included in the film and crystallization is performed therefor. Thus, an orientation ratio of the semiconductor film (104) can be increased and a distortion present in the semiconductor film (104) after the crystallization is suppressed as compared with that present in the semiconductor film before the crystallization. Then, the noble gas element in the film is removed or reduced by laser light irradiation performed later.

摘要翻译： 通过使非晶半导体膜结晶而获得的结晶半导体膜的取向比增加，其变形被抑制，并且提供使用这种结晶半导体膜的TFT。 在形成非晶半导体膜（102）或其形成之后，薄膜中包含通常为氩的惰性气体元素，并进行结晶。 因此，与结晶前的半导体膜中存在的结果相比，可以提高半导体膜（104）的取向比，结晶后存在于半导体膜（104）中的变形。 然后，通过稍后进行的激光照射，去除或还原膜中的惰性气体元素。

公开(公告)号：US20060172471A1

公开(公告)日：2006-08-03

申请号：US11393764

申请日：2006-03-31

申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Toru Mitsuki ,  Hisashi Ohtani

发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Toru Mitsuki ,  Hisashi Ohtani

IPC分类号： H01L21/84

CPC分类号： H01L29/78603 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/3226 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621

摘要： An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating film 103 is flattened to form the under insulating layer 104. By this flattening process, the distance L1, L2, . . . , Ln between the recesses 106a, 106b, 106d of the under insulating layer 104 is made 0.3 μm or more, and the depth of the respective recesses is made 10 nm or less. The root-mean-square surface roughness of the surface of the under insulating film 104 is made 0.3 nm or less. By this, in the recesses 106a, 106b, 106d, it can be avoided to block crystal growth of the semiconductor thin film, and crystal grain boundaries can be substantially disappeared.

摘要翻译： 用于制造下绝缘层104的绝缘膜103形成在石英或半导体衬底100上。 在绝缘膜103的表面上形成与基板100的凹部101a〜101d对应的凹部105a〜105d。 该绝缘膜103的表面被平坦化以形成下绝缘层104。 通过该平坦化处理，距离L 1，L 2，... 。 。 在下绝缘层104的凹部106a，106b，106d之间的Ln为0.3μm以上，各凹部的深度为10nm以下。 下绝缘膜104的表面的均方根表面粗糙度为0.3nm以下。 由此，在凹部106a，106b，106d中，可以避免阻挡半导体薄膜的晶体生长，并且晶粒边界可以基本消失。

公开(公告)号：US06720575B2

公开(公告)日：2004-04-13

申请号：US10263730

申请日：2002-10-04

申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Toru Mitsuki ,  Hisashi Ohtani

发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Toru Mitsuki ,  Hisashi Ohtani

IPC分类号： H01L2940

CPC分类号： H01L29/78603 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/3226 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621

摘要： An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating film 103 is flattened to form the under insulating layer 104. By this flattening process, the distance L1, L2, . . . , Ln between the recesses 106a, 106b, 106d of the under insulating layer 104 is made 0.3 &mgr;m or more, and the depth of the respective recesses is made 10 nm or less. The root-mean-square surface roughness of the surface of the under insulating film 104 is made 0.3 nm or less. By this, in the recesses 106a, 106b, 106d, it can be avoided to block crystal growth of the semiconductor thin film, and crystal grain boundaries can be substantially disappeared.

摘要翻译： 在石英或半导体基板100上形成用于制造绝缘层104的绝缘膜103.形成在绝缘膜103的表面上的与基板100的凹部101a〜101d对应的凹部105a〜105d。 绝缘膜103被平坦化以形成下部绝缘层104.通过该平坦化处理，距离L1，L2， 。 。 下绝缘层104的凹部106a，106b，106d之间的Ln为0.3μm以上，各凹部的深度为10nm以下。 下绝缘膜104的表面的均方根表面粗糙度为0.3nm以下。 由此，在凹部106a，106b，106d中，可以避免阻止半导体薄膜的晶体生长，并且晶粒边界可以基本消失。

公开(公告)号：US06693299B1

公开(公告)日：2004-02-17

申请号：US09115094

申请日：1998-07-13

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Toru Mitsuki ,  Takeshi Fukunaga

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Toru Mitsuki ,  Takeshi Fukunaga

IPC分类号： H01L2776

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78696

摘要： In a semiconductor device using a crystalline semiconductor film on a substrate 106 having an insulating surface, impurities are locally implanted into an active region 102 to form a pinning region 104. The pinning region 104 suppresses the spread of a depletion layer from the drain side to effectively prevent the short-channel effect. Also, since a channel forming region 105 is intrinsic or substantially intrinsic, a high mobility is realized.

摘要翻译： 在具有绝缘表面的衬底106上使用结晶半导体膜的半导体器件中，将杂质局部注入到有源区102中以形成钉扎区104.钉扎区104抑制耗尽层从漏极侧扩散到 有效防止短路效应。 此外，由于沟道形成区域105是固有的或基本上固有的，因此实现高迁移率。

公开(公告)号：US06388270B1

公开(公告)日：2002-05-14

申请号：US09275930

申请日：1999-03-24

申请人： Shunpei Yamazaki ,  Toru Mitsuki

发明人： Shunpei Yamazaki ,  Toru Mitsuki

IPC分类号： H01L2904

CPC分类号： H01L29/045 ,  G02F1/13454 ,  H01L27/1251 ,  H01L27/1277 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78684

摘要： To provide a semiconductor device utilizing a semiconductor film having a high crystallinity by a production process having a high mass productivity. Upon crystallizing an amorphous silicon film 106, germanium is used as a catalyst element for accelerating the crystallization. A heat treatment is conducted in a condition in that a germanium film 107 is formed on the amorphous silicon film 106, and thus a polysilicon film 108 is obtained by the catalytic function of germanium. The polysilicon film 108 thus obtained has crystallinity that can be substantially regarded as a single crystal.

摘要翻译： 通过具有高质量生产率的制造方法提供利用具有高结晶度的半导体膜的半导体器件。在结晶非晶硅膜106时，使用锗作为促进结晶的催化剂元素。 在非晶硅膜106上形成锗膜107的条件下进行热处理，由此通过锗的催化功能获得多晶硅膜108。 由此获得的多晶硅膜108具有基本上被认为是单晶的结晶度。

公开(公告)号：US06294815B1

公开(公告)日：2001-09-25

申请号：US09553488

申请日：2000-04-20

申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Toru Mitsuki ,  Hisashi Ohtani

发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Toru Mitsuki ,  Hisashi Ohtani

IPC分类号： H01L2701

CPC分类号： H01L29/78675 ,  G02F1/13454 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78603

摘要： A semiconductor device comprising a substrate having an insulating surface layer and an active layer comprising a semiconductor thin film formed thereon, wherein the substrate and the insulating surface layer in contact with the substrate each has at least one concave part, and the influence of the concave part is removed by conducting a flattening treatment and heat treatment of the undercoat film of the semiconductor thin film.

摘要翻译： 一种半导体器件，包括具有绝缘表面层的衬底和在其上形成的半导体薄膜的有源层，其中所述衬底和与所述衬底接触的绝缘表面层各自具有至少一个凹部，并且所述凹部 通过对半导体薄膜的底涂层进行扁平化处理和热处理来除去部分。

公开(公告)号：US06979632B1

公开(公告)日：2005-12-27

申请号：US08678591

申请日：1996-07-11

申请人： Hisashi Ohtani ,  Takeshi Fukunaga ,  Toru Mitsuki

发明人： Hisashi Ohtani ,  Takeshi Fukunaga ,  Toru Mitsuki

IPC分类号： H01L21/20 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/336

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/3065 ,  H01L29/66757

摘要： The present invention has as its object to provide a technique of forming a surface of a thin-film semiconductor having corrugations and smoothing the same. This is achieved by a fabrication method for thin-film semiconductors which smooths a surface of a silicon film having corrugations, comprising the steps of forming an oxidized silicon film on the surface of the silicon film, removing the oxidized silicon film which has been formed in protruding portions among the corrugations and exposing at least part of protruding portions in the silicon film, and removing the protrusions in the silicon film exposed in the previous step. In the above structure, the silicon film having corrugations has an average thickness of about 100 Å to 1000 Å (e.g. an amorphous silicon film or a crystalline silicon film crystallized by thermal processing) which is irradiated by a laser beam and crystallized or a silicon layer promoting crystallization.

摘要翻译： 本发明的目的是提供一种形成具有波纹并使其光滑的薄膜半导体的表面的技术。 这是通过对具有波纹的硅膜的表面进行平滑化的薄膜半导体的制造方法实现的，包括以下步骤：在硅膜的表面上形成氧化硅膜，除去已形成的氧化硅膜 在波纹之间突出并暴露硅膜中的至少一部分突出部分，以及去除在前一步骤中暴露的硅膜中的突起。 在上述结构中，具有波纹的硅膜具有通过激光束照射并结晶化或结晶化的硅层的平均厚度（例如通过热加工结晶的非晶硅膜或结晶硅膜） 促进结晶。

公开(公告)号：US06337235B1

公开(公告)日：2002-01-08

申请号：US09534152

申请日：2000-03-24

申请人： Akiharu Miyanaga ,  Toru Mitsuki

发明人： Akiharu Miyanaga ,  Toru Mitsuki

IPC分类号： H01L2176

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2022 ,  H01L27/1214 ,  H01L27/1277 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863

摘要： The object of the present invention is to develop a manufacturing process for fabricating thin film transistors by using a crystalline semiconductor film appropriately for the purpose, in which the crystalline semiconductor film is formed by using a catalyst which enables crystallization at a low temperature and is easily gettered. Low temperature crystallization is realized by introducing Cu, a catalyst, on the amorphous semiconductor film and performing a heat treatment. Cu is gettered by immersing the polycrystalline semiconductor film which slightly includes Cu into a chemical fluid selected from a group consisting of a chemical including oxygen namely sulfuric acid. nitric acid, oxalic acid and nitrohydrochloric acid, and a chemical not including oxygen namely hydrochrolic acid and hydrofluoric acid

摘要翻译： 本发明的目的是开发一种用于制造薄膜晶体管的制造方法，该方法是通过使用适合于此目的的结晶半导体膜，其中通过使用能够在低温下结晶并容易结晶的催化剂形成结晶半导体膜 通过在非晶半导体膜上引入Cu，催化剂并进行热处理来实现低温结晶。 通过将稍微包含Cu的多晶半导体膜浸入选自包括氧的化学物质即硫酸的化学流体中来吸收Cu。 硝酸，草酸和硝基盐酸，以及不含氧的化学物质，即氢氯酸和氢氟酸