-
公开(公告)号：US08448034B2
公开(公告)日：2013-05-21
申请号：US12888822
申请日：2010-09-23
CPC分类号： G11C29/52 , G06F11/1008 , G06F11/1068
摘要： According to one embodiment, a semiconductor memory device includes semiconductor memory chips in which data requested to be written. The data has one or more pieces of first data in a predetermined unit. The device includes a write controller that writes the first data and redundancy information calculated by using a predetermined number of pieces of the first data and used for correcting an error in the predetermined number of pieces of the first data into different semiconductor memory chips; and a storage unit that stores identification information and region specifying information so as to be associated with each other. The identification information associates the first data and the redundancy information, and the region specifying information specifies a plurality of storage regions in the semiconductor memory chips to which the pieces of the first data and the redundancy information associated with each other are written.
-
公开(公告)号：US08423709B2
公开(公告)日：2013-04-16
申请号：US12716547
申请日：2010-03-03
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F3/0611 , G06F3/064 , G06F3/0679 , G06F2212/7201 , G06F2212/7205
摘要： A controller stores therein a sector address set indicating logical storage positions within a nonvolatile-memory storage area; page addresses indicating, in units of pages, physical storage positions within the nonvolatile-memory storage area; and pieces of management information each indicating whether one or more special sectors each being either a bad sector or a trimmed sector trimmed by a TRIM command are present in the corresponding page, while associating them with each other. When an access to a specified sector address is requested, the device refers to the piece of management information and judges whether any special sector is present in the page identified by the page address corresponding to the sector address. The device generates predetermined response data if the page contains one or more special sectors and accesses the nonvolatile-memory storage position corresponding to the sector address if the page contains no special sector.
摘要翻译： 控制器在其中存储指示非易失性存储器存储区域内的逻辑存储位置的扇区地址集合; 页面地址，以页为单位指示非易失性存储器存储区域内的物理存储位置; 以及各管理信息，每个管理信息指示在相应的页面中是否存在各自为坏扇区的一个或多个特殊扇区或由TRIM命令修剪的修剪扇区，同时将它们相互关联。 当请求对指定的扇区地址的访问时，设备参考管理信息，并判断由扇区地址对应的页地址所标识的页面中是否存在特殊扇区。 如果页面包含一个或多个特殊扇区，则该设备产生预定的响应数据，并且如果页面不包含特殊扇区，则访问对应于扇区地址的非易失性存储器存储位置。
-
公开(公告)号：US20120246383A1
公开(公告)日：2012-09-27
申请号：US13217461
申请日：2011-08-25
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F11/1068
摘要： According to an embodiment, a memory system includes semiconductor memories each having a plurality of blocks; a first table; a receiving unit; a generating unit; a second table; and a writing unit. The first table includes a plurality of memory areas each associated with each block and in each of which defect information is stored. The generating unit generates a set of blocks by selecting one block to which data are to be written in each semiconductor memory based on an index number indicating one of a plurality of rows in the first table and the first table. In the second table, an index number and a channel number are stored for each logical block address in association with one another. When a write command is received by the receiving unit, the writing unit writes data to a block associated with a selected channel number among blocks constituting the set.
摘要翻译： 根据一个实施例，存储器系统包括每个具有多个块的半导体存储器; 第一张桌子 接收单元; 发电机组; 第二个表 和书写单位。 第一表包括多个存储区，每个存储区与每个块相关联，并且每个存储区存储缺陷信息。 生成单元基于指示第一表和第一表中的多行的索引号，选择要在每个半导体存储器中写入数据的一个块来生成一组块。 在第二表中，对于每个逻辑块地址彼此相关联地存储索引号和通道号。 当接收单元接收到写入命令时，写入单元将数据写入与构成该组的块中的所选频道号相关联的块。
-
公开(公告)号：US20120226957A1
公开(公告)日：2012-09-06
申请号：US13218812
申请日：2011-08-26
CPC分类号： G06F11/1048
摘要： According to an embodiment of a controller, a bit string manipulating unit manipulates a bit string of manipulation target data based on a predetermined rule. A special data setting unit generates a magic number based on a special data setting request from a host interface, obtains an error detecting code for the magic number, and sends the magic number and the error detecting code as manipulation target data to the bit string manipulating unit to obtain a manipulated manipulation target data. The special data setting unit also extracts logical block address information from the special data setting request, and instructs an access unit to write the magic number in the manipulated manipulation target data to a user data storage area and to write the error detecting code in the manipulated manipulation target data to a redundant area in a storage area located by the logical block address information.
摘要翻译： 根据控制器的实施例，位串操作单元基于预定规则来操纵操作对象数据的位串。 专用数据设定部基于来自主机接口的特殊数据设定请求生成魔术数，获得魔术数的错误检测码，将魔术号码和错误检测码作为操作对象数据发送到位串操作 单位以获得操纵的操纵目标数据。 特殊数据设定单元还从特殊数据设定请求中提取逻辑块地址信息，并指示访问单元将操作操作目标数据中的魔术数字写入用户数据存储区域，并将错误检测码写入被操纵的 将操作对象数据提供给由逻辑块地址信息定位的存储区域中的冗余区域。
-
公开(公告)号：US20120072644A1
公开(公告)日：2012-03-22
申请号：US13037970
申请日：2011-03-01
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F12/1009 , G06F2212/7201 , G06F2212/7205
摘要： According to one embodiment, upon request from an information processor, a semiconductor storage controller writes pieces of data in predetermined units into storage locations in which no data has been written in erased areas within a semiconductor chip's storage area. A third table and a second table which is a subset thereof include physical addresses each indicating a storage location of each of pieces of the data within the semiconductor chip. The first table includes either information specifying a second table entry or information specifying a third table entry. The semiconductor storage controller records the first and the second tables into a volatile memory or records the first table into a volatile memory and the third table into a nonvolatile memory.
摘要翻译： 根据一个实施例，根据信息处理器的要求，半导体存储控制器以预定单位将多条数据写入在半导体芯片的存储区域内的擦除区域中没有数据写入的存储位置。 作为其子集的第三表和第二表包括各自表示半导体芯片内的每个数据的存储位置的物理地址。 第一表包括指定第二表条目的信息或指定第三表条目的信息。 半导体存储控制器将第一和第二表记录到易失性存储器中，或将第一表记录到易失性存储器中，将第三表记录到非易失性存储器中。
-
公开(公告)号：US20110231624A1
公开(公告)日：2011-09-22
申请号：US12883796
申请日：2010-09-16
CPC分类号： G06F12/0246 , G06F3/0608 , G06F3/061 , G06F3/0611 , G06F3/0631 , G06F3/0638 , G06F3/064 , G06F3/0644 , G06F3/0659 , G06F3/0665 , G06F3/0679 , G06F3/0688 , G06F12/00 , G06F12/16 , G06F2212/1016 , G06F2212/214 , G06F2212/7202 , G06F2212/7205
摘要： According to one embodiment, a write instructing unit instructs a data access unit to write, in a storage area of a data storage unit indicated by a first physical address, write object data, instructs a management information access unit to update address conversion information, and instructs a first access unit to update the first physical address. A compaction unit extracts a physical address of compaction object data, instructs the data access unit to read the compaction object data stored in a storage area of the data storage unit indicated by the physical address, instructs the data access unit to write the compaction object data in a storage area of the data storage unit indicated by a second physical address, instructs the management information access unit to update the address conversion information, and instructs a second access unit to update the second physical address.
摘要翻译： 根据一个实施例，写指令单元指示数据存取单元在由第一物理地址指示的数据存储单元的存储区中写入对象数据，指示管理信息访问单元更新地址转换信息，以及 指示第一个访问单元更新第一个物理地址。 压缩单元提取压缩对象数据的物理地址，指示数据存取单元读取存储在由物理地址指示的数据存储单元的存储区域中的压缩对象数据，指示数据存取单元写入压缩对象数据 在由第二物理地址指示的数据存储单元的存储区域中，指示管理信息存取单元更新地址转换信息，并指示第二存取单元更新第二物理地址。
-
公开(公告)号：US20090327802A1
公开(公告)日：2009-12-31
申请号：US12398608
申请日：2009-03-05
IPC分类号： G06F11/20
CPC分类号： G06F11/108 , G06F11/1068
摘要： When data in one semiconductor memory device is corrupted during a padding process by a padding unit and the data cannot be recovered even by using an error correcting code for correcting a data error, a storage control device issues a data recovery request to a data recovery device. The data recovery device reads the data from other semiconductor memory device in response to the data recovery request to recover the data, and returns a recovery result to the padding unit in the storage control device to perform the padding process.
摘要翻译： 当一个半导体存储器件中的数据在填补单元的填充处理期间被破坏时，即使通过使用用于校正数据错误的纠错码也不能恢复数据，存储控制装置向数据恢复装置发出数据恢复请求 。 数据恢复装置响应于数据恢复请求从其他半导体存储装置读取数据以恢复数据，并将恢复结果返回到存储控制装置中的填充单元以执行填充处理。
-
公开(公告)号：US20090327604A1
公开(公告)日：2009-12-31
申请号：US12396006
申请日：2009-03-02
IPC分类号： G06F12/06
CPC分类号： G06F3/0656 , G06F3/0614 , G06F3/0688
摘要： A size storage unit stores therein a block size of a memory element. A buffering unit executes buffer processing configured to store data received from a RAID (Redundant Arrays of Inexpensive/Independent Disks) controller into a buffer, and to write the data stored in the buffer into the memory element. A stripe-size receiving unit receives a stripe size that indicates a size of a unit of access at time of access to the memory element by the RAID controller. Writing processing is configured to write data received from the RAID controller into the memory element without executing the buffer processing by the buffering unit, when the stripe size is n times of the block size (n is a positive integer).
摘要翻译： 大小存储单元存储存储元件的块大小。 缓冲单元执行缓冲处理，其被配置为将从RAID（廉价/独立磁盘的冗余阵列）控制器接收的数据存储到缓冲器中，并且将存储在缓冲器中的数据写入存储器元件。 条形尺寸接收单元接收指示由RAID控制器访问存储器元件时的访问单元的大小的条带大小。 写入处理被配置为当条带大小是块大小的n倍（n为正整数）时，将从RAID控制器接收的数据写入存储元件，而不执行缓冲单元的缓冲器处理。
-
公开(公告)号：US20130238838A1
公开(公告)日：2013-09-12
申请号：US13603989
申请日：2012-09-05
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F12/02 , G06F12/0802 , G06F12/0859 , G06F12/0868 , G06F12/0871 , G06F12/0873 , G06F2212/604 , G06F2212/7202 , G06F2212/7203
摘要： According to an embodiment, a controller is connected to an external storage device and controls access to a semiconductor storage device including blocks each including memory cell groups each having memory cells. The block includes pages associated with each memory cell group. A writing process for each memory cell group includes writing stages. The controller includes a determining unit configured to determine data to be transferred to the page required in the writing process for a first memory cell group before the writing stage first starts when the writing stage is performed; a reading unit configured to read the determined data from the semiconductor storage device and to store the read data in the external storage device before the writing stage starts; and a writing unit configured to perform the writing process using the data stored in the external storage device when the writing stage is performed.
摘要翻译： 根据实施例，控制器连接到外部存储装置，并且控制对包括各自包含存储单元的存储单元组的块的半导体存储装置的访问。 该块包括与每个存储器单元组相关联的页面。 每个存储单元组的写入过程包括写入阶段。 控制器包括：确定单元，被配置为在执行写入阶段时，在写入阶段首先开始之前，确定要传送到第一存储单元组的写入处理所需的页面的数据; 读取单元，其被配置为从所述半导体存储装置读取所确定的数据，并且在所述写入阶段开始之前将读取的数据存储在所述外部存储装置中; 以及写入单元，被配置为当执行写入阶段时，使用存储在外部存储装置中的数据执行写入处理。
-
公开(公告)号：US08453033B2
公开(公告)日：2013-05-28
申请号：US12885962
申请日：2010-09-20
IPC分类号： H03M13/09
CPC分类号： G06F11/1048
摘要： According to one embodiment, a semiconductor memory device includes semiconductor memory chips having writable storage regions in which data is written. The data has one or more pieces of first data, and one or more pieces of the first data includes second data. The device includes a determining unit that determines a prescribed number or fewer of semiconductor memory chips to which the first data is written; a write controller that writes the the first data and redundant information calculated from the second data and used for correcting an error in the second data into the writable storage regions in the determined semiconductor memory chips; and a storage unit that stores identification information and region specifying information associated with each other. The identification information associates the second data and the redundant information, and the region specifying information specifies the storage regions in the semiconductor memory chips to which the first data included in the second data and the redundant information are written.
摘要翻译： 根据一个实施例，半导体存储器件包括具有可写入存储区域的数据被写入的半导体存储器芯片。 数据具有一个或多个第一数据，并且一个或多个第一数据包括第二数据。 该装置包括：确定单元，其确定写入第一数据的半导体存储器芯片的规定数量以下; 写入控制器，其将从第二数据计算出的第一数据和冗余信息写入第二数据中的错误，并将其写入到所确定的半导体存储器芯片中的可写入存储区域中; 以及存储单元，其存储彼此相关联的识别信息和区域指定信息。 所述识别信息将所述第二数据和所述冗余信息相关联，并且所述区域指定信息指定在所述第二数据中包含的所述第一数据和所述冗余信息被写入的所述半导体存储器芯片中的存储区域。
-
-
-
-
-
-
-
-
-
搜索结果
122 条记录 (耗时 0.037 秒)
