公开(公告)号：US08101957B2

公开(公告)日：2012-01-24

申请号：US11727496

申请日：2007-03-27

申请人： Tsutomu Ishikawa

发明人： Tsutomu Ishikawa

IPC分类号： H01L27/15

CPC分类号： H01S5/0612 ,  H01S5/02453 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S2301/173

摘要： An optical semiconductor device has a semiconductor substrate, an optical semiconductor region and a heater. The optical semiconductor region is provided on the semiconductor substrate and has a width smaller than that of the semiconductor substrate. The heater is provided on the optical semiconductor region. The optical semiconductor region has a cladding region, an optical waveguide layer and a low thermal conductivity layer. The optical waveguide layer is provided in the cladding region and has a refractive index higher than that of the cladding region. The low thermal conductivity layer is provided between the optical waveguide layer and the semiconductor substrate and has a thermal conductivity lower than that of the cladding region.

摘要翻译： 光学半导体器件具有半导体衬底，光学半导体区域和加热器。 光半导体区域设置在半导体衬底上，其宽度小于半导体衬底的宽度。 加热器设置在光学半导体区域上。 光学半导体区域具有包层区域，光波导层和低热导率层。 光波导层设置在包层区域中，折射率高于包层区域的折射率。 低导热率层设置在光波导层与半导体基板之间，其热导率低于包层区域。

公开(公告)号：US20110300009A1

公开(公告)日：2011-12-08

申请号：US13148033

申请日：2009-02-04

申请人： Kiyoto Kikuchi ,  Junya Satou ,  Hiroyuki Endou ,  Tsutomu Ishikawa

发明人： Kiyoto Kikuchi ,  Junya Satou ,  Hiroyuki Endou ,  Tsutomu Ishikawa

IPC分类号： F04B49/22 ,  B24B1/00 ,  B05D1/02 ,  B23K26/00

CPC分类号： F04B27/1081 ,  F04B39/1066

摘要： [Object of the Invention] An object of the present invention is to provide a method for processing contact portions between a valve plate and a suction valve and/or discharge valve of a reciprocating compressor to prevent the suction valve and/or the discharge valve from sticking on the valve plate at the portions contacting the valve plate, the productivity thereof being higher than that of the conventional method.[Disclosure of the Invention] A method for processing contact portions between a valve plate 8 and a suction valve 10a and/or discharge valve 10b of a reciprocating compressor to prevent the suction valve 10a and/or the discharge valve 10b from sticking on the valve plate 8 at the portions contacting the valve plate 8 comprises the steps of quenching the portion of the end face of the valve plate 8 contacting the suction valve 10a near the suction hole 8a and/or the portion of the end face of the valve plate 8 contacting the discharge valve 10b near the discharge hole 8b by laser beam machining without melting them, and grinding the end face of the valve plate 8 contacting the suction valve 10a and/or the end face of the valve plate 8 contacting the discharge valve 10b to project the quenched portions from the remaining unquenched portions.

摘要翻译： 发明内容本发明的目的是提供一种用于处理往复式压缩机的阀板与吸入阀和/或排出阀之间的接触部分的方法，以防止吸入阀和/或排出阀 在与阀板接触的部分处贴在阀板上，其生产率高于常规方法。 发明内容一种用于处理往复式压缩机的阀板8和吸入阀10a和/或排出阀10b之间的接触部分的方法，以防止吸入阀10a和/或排出阀10b粘附在阀 在与阀板8接触的部分的板8包括以下步骤：在接近吸气孔8a和/或阀板8的端面部分的阀板8的接触部分的部分骤冷 通过激光加工使排出孔10b靠近排出孔10b而不熔化，并且与接触排出阀10b的阀板8接触的阀板8和/或接触排出阀10b的端面的端面磨削到 从剩余的未淬火部分突出淬火部分。

公开(公告)号：US20110292960A1

公开(公告)日：2011-12-01

申请号：US13117541

申请日：2011-05-27

申请人： Hajime Shoji ,  Takuya Fujii ,  Tsutomu Ishikawa

发明人： Hajime Shoji ,  Takuya Fujii ,  Tsutomu Ishikawa

IPC分类号： H01S5/026

CPC分类号： H01S5/0287 ,  H01S5/0261 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0283 ,  H01S5/0602 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/1212

摘要： A wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more; a second facet; a wavelength selection portion between the first facet and the second facet; and an optical absorption region between the first facet and the wavelength selection portion. Another wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more to inside of the semiconductor laser; a second facet for output; a wavelength selection portion having diffraction gratings and positioned between the first and the second facet; an optical absorption region located between the first facet and the wavelength selection portion.

摘要翻译： 一种波长可调谐半导体激光器包括：反射率为10％以上的第一面; 第二个方面 第一面和第二面之间的波长选择部分; 以及第一面和波长选择部之间的光吸收区域。 另一种波长可调谐半导体激光器包括：对半导体激光器内部的反射率为10％以上的第一面; 产出的第二个方面; 具有衍射光栅并位于第一和第二面之间的波长选择部分; 位于第一面和波长选择部之间的光吸收区。

公开(公告)号：US20110290348A1

公开(公告)日：2011-12-01

申请号：US13129975

申请日：2009-11-18

申请人： Kanetaka Miyazawa ,  Norio Kitajima ,  Tsutomu Ishikawa ,  Youko Yamagata

发明人： Kanetaka Miyazawa ,  Norio Kitajima ,  Tsutomu Ishikawa ,  Youko Yamagata

IPC分类号： F16K15/00

CPC分类号： F04B27/0839 ,  F04B27/1036 ,  F04B39/1066 ,  Y10T137/7837

摘要： Provided is a specific structure for a compressor valve plate device, which can ensure smooth operation of a suction valve in terms of suction valve sticking force due to lubricant oil, and can be mass-produced at low cost with high efficiency. The compressor valve plate device comprises; a valve plate having a suction hole and a discharge hole; a suction valve; and a discharge valve. At least a part of a gas filling chamber capable of introducing and filling gas with a higher pressure than suction gas pressure in a suction chamber between the valve plate and the suction valve is constituted in the valve plate, while a communication hole communicating with a surface at the valve closing side of the suction valve is provided to the valve plate. At least a part of a gas introduction route for introducing the higher-pressure gas into the communication hole is formed on the discharge valve formed from a thin plate. In addition, a part of the gas introduction route formed on the discharge valve is sealed by a member disposed on a surface facing the discharge valve.

摘要翻译： 提供一种用于压缩机阀板装置的具体结构，其可以确保吸入阀在润滑油的吸入阀粘附力方面的平稳运行，并且可以以低成本高效率批量生产。 压缩机阀板装置包括： 具有吸入孔和排出孔的阀板; 吸入阀; 和排气阀。 在阀板和吸入阀之间的吸入室中，能够引入和填充压力高于吸入气体压力的气体的气体填充室的至少一部分，而与表面连通的连通孔 在阀门的阀关闭侧设置有阀板。 在由薄板形成的排出阀上形成有用于将高压气体引入连通孔的气体导入路径的至​​少一部分。 此外，形成在排出阀上的气体导入路径的一部分被设置在面向排出阀的表面上的部件密封。

公开(公告)号：US20110020158A1

公开(公告)日：2011-01-27

申请号：US12935245

申请日：2009-03-11

申请人： Hiroshi Ikeda ,  Tsutomu Ishikawa

发明人： Hiroshi Ikeda ,  Tsutomu Ishikawa

IPC分类号： A61M1/00

CPC分类号： F04B27/1009 ,  F04B39/1066 ,  F04B39/1073 ,  Y10T137/7843

摘要： A compressor includes a cylinder block including cylinder bores and pistons within the cylinder bores. A front housing opposes a first cylinder block end face to form a crank chamber accommodating a piston driving mechanism. A valve plate opposes a second cylinder block end face and includes suction and discharge holes. A rear housing includes suction and discharge chambers and opposes the second cylinder block end face with the valve plate there between. Strap-shaped suction valves on the valve plate end face oppose the cylinder block, thereby opening and closing the suction holes at tip portions. Discharge valves on the valve plate end face oppose the rear housing to open and close the discharge holes. Through-bolts join the front housing, the crank chamber, the cylinder block, the valve plate, and the rear housing. The valve plate includes grooves extending from holes accommodating the through-bolts to portions abutting the suction valves.

摘要翻译： 压缩机包括在气缸孔内包括气缸孔和活塞的气缸体。 前壳体与第一气缸体端面相对，以形成容纳活塞驱动机构的曲柄室。 阀板与第二气缸体端面相对，并且包括吸入孔和排出孔。 后壳体包括吸入和排出室，并且与其间的阀板相对的第二气缸体端面。 阀板端面上的带状抽吸阀与气缸​​体相对，从而在尖端部分处打开和关闭吸入孔。 阀板端面上的排放阀与后壳体相对，以打开和关闭排放孔。 通过螺栓连接前壳体，曲轴室，气缸体，阀板和后壳体。 阀板包括从容纳贯穿螺栓的孔延伸到与吸入阀邻接的部分的槽。

公开(公告)号：US20100040101A1

公开(公告)日：2010-02-18

申请号：US12571846

申请日：2009-10-01

申请人： Tsutomu Ishikawa

发明人： Tsutomu Ishikawa

IPC分类号： H01S5/00

CPC分类号： H01S5/0612 ,  H01S5/024 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/125

摘要： An optical semiconductor device has a semiconductor substrate, a semiconductor region and heater. The semiconductor region has a stripe shape demarcated with a top face and a side face thereof. The stripe shape has a width smaller than a width of the semiconductor substrate. An optical waveguide layer is located in the semiconductor region. A distance from a lower end of the side face of the semiconductor region to the optical waveguide layer is more than half of the width of the semiconductor region. The heater is provided above the optical waveguide layer.

摘要翻译： 光半导体器件具有半导体衬底，半导体区域和加热器。 半导体区域具有与顶面和侧面划分的条纹形状。 条纹形状的宽度小于半导体衬底的宽度。 光波导层位于半导体区域中。 从半导体区域的侧面的下端到光波导层的距离为半导体区域的宽度的一半以上。 加热器设置在光波导层上。

公开(公告)号：US20090175306A1

公开(公告)日：2009-07-09

申请号：US11990260

申请日：2006-08-09

申请人： Ken Nakahara ,  Tsutomu Ishikawa

发明人： Ken Nakahara ,  Tsutomu Ishikawa

IPC分类号： H01S5/22

CPC分类号： H01S5/34326 ,  B82Y20/00 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02461 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3213

摘要： Provided is a high-power red semiconductor laser having a laser element in which a temperature rise is suppressed with improved heat dissipation characteristics thereof, and which accordingly needs not be enlarged in heat dissipation area. An n-AlGaInP cladding layer, an AlGaInP optical guide layer, an MQW active layer, an AlGaInP optical guide layer, a p-AlGaInP first cladding layer, an AlGaInP etching stop layer, an n-AlGaInP block layer, a p-AlGaAs second cladding layer, a p-GaAs contact layer and a p-electrode are stacked on the top surface of a tilted n-GaAs substrate. An n-electrode is formed on the back surface of the n-GaAs substrate. The heat dissipation characteristics of the laser element are improved, because the second cladding layer contains AlGaAs, which has a higher heat conductivity.

摘要翻译： 提供一种具有激光元件的高功率红色半导体激光器，其中通过改善其散热特性来抑制温度升高，并且因此不需要在散热面积上扩大。 n-AlGaInP包层，AlGaInP光导层，MQW有源层，AlGaInP光导层，p-AlGaInP第一包层，AlGaInP蚀刻停止层，n-AlGaInP阻挡层，p-AlGaAs第二 覆盖层，p-GaAs接触层和p电极堆叠在倾斜的n-GaAs衬底的顶表面上。 在n-GaAs衬底的背面上形成n电极。 由于第二包层具有较高的导热率的AlGaAs，因此能够提高激光元件的散热特性。

公开(公告)号：US20090103585A1

公开(公告)日：2009-04-23

申请号：US12314350

申请日：2008-12-09

申请人： Tsutomu Ishikawa ,  Takuya Fujii

发明人： Tsutomu Ishikawa ,  Takuya Fujii

IPC分类号： H01S5/00

CPC分类号： H01S5/06256 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01S5/02276 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0612 ,  H01S5/06258 ,  H01S5/1209 ,  H01L2924/00014

摘要： An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and has a heater for changing a refractive index of the second optical waveguide region. The metal pattern is provided on an area to be thermally coupled to a temperature control device. The thermal conductive material couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element. The thermal conductive material is electrically separated from the first optical waveguide region.

公开(公告)号：US20080033182A1

公开(公告)日：2008-02-07

申请号：US11596893

申请日：2005-05-17

申请人： Tsutomu Ishikawa ,  Masatoshi Kawahata

发明人： Tsutomu Ishikawa ,  Masatoshi Kawahata

IPC分类号： C07D233/04

CPC分类号： C07D233/50 ,  C07F3/003

摘要： A new guanidine compound which is a bisguanidine compound represented by the formula (1): (wherein X represents hydrogen or a substituent; the benzene ring may have the same or different substituents bonded thereto; and R1's are the same or different hydrocarbon groups) and has a symmetrical structure. This compound can be a new functional substance such as, e.g., an aid for asymmetric synthesis.

摘要翻译： 作为由式（1）表示的双胍化合物的新的胍化合物：其中X表示氢或取代基;苯环可以具有与之相连的取代基; R 1' s是相同或不同的烃基）并且具有对称结构。 该化合物可以是新的功能物质，例如，用于不对称合成的辅助物质。

公开(公告)号：US20070230523A1

公开(公告)日：2007-10-04

申请号：US11727496

申请日：2007-03-27

申请人： Tsutomu Ishikawa

发明人： Tsutomu Ishikawa

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/0612 ,  H01S5/02453 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S2301/173

摘要： An optical semiconductor device has a semiconductor substrate, an optical semiconductor region and a heater. The optical semiconductor region is provided on the semiconductor substrate and has a width smaller than that of the semiconductor substrate. The heater is provided on the optical semiconductor region. The optical semiconductor region has a cladding region, an optical waveguide layer and a low thermal conductivity layer. The optical waveguide layer is provided in the cladding region and has a refractive index higher than that of the cladding region. The low thermal conductivity layer is provided between the optical waveguide layer and the semiconductor substrate and has a thermal conductivity lower than that of the cladding region.

摘要翻译： 光学半导体器件具有半导体衬底，光学半导体区域和加热器。 光半导体区域设置在半导体衬底上，其宽度小于半导体衬底的宽度。 加热器设置在光学半导体区域上。 光学半导体区域具有包层区域，光波导层和低热导率层。 光波导层设置在包层区域中，折射率高于包层区域的折射率。 低导热率层设置在光波导层与半导体基板之间，其热导率低于包层区域。