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    WAVELENGTH TUNABLE SEMICONDUCTOR LASER
    1.
    发明申请
    WAVELENGTH TUNABLE SEMICONDUCTOR LASER 审中-公开
    波长半导体激光器

    公开(公告)号：US20110292960A1

    公开(公告)日：2011-12-01

    申请号：US13117541

    申请日：2011-05-27

    申请人： Hajime Shoji ,  Takuya Fujii ,  Tsutomu Ishikawa

    发明人： Hajime Shoji ,  Takuya Fujii ,  Tsutomu Ishikawa

    IPC分类号： H01S5/026

    CPC分类号： H01S5/0287 ,  H01S5/0261 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0283 ,  H01S5/0602 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/1212

    摘要： A wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more; a second facet; a wavelength selection portion between the first facet and the second facet; and an optical absorption region between the first facet and the wavelength selection portion. Another wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more to inside of the semiconductor laser; a second facet for output; a wavelength selection portion having diffraction gratings and positioned between the first and the second facet; an optical absorption region located between the first facet and the wavelength selection portion.

    摘要翻译： 一种波长可调谐半导体激光器包括：反射率为10％以上的第一面; 第二个方面 第一面和第二面之间的波长选择部分; 以及第一面和波长选择部之间的光吸收区域。 另一种波长可调谐半导体激光器包括：对半导体激光器内部的反射率为10％以上的第一面; 产出的第二个方面; 具有衍射光栅并位于第一和第二面之间的波长选择部分; 位于第一面和波长选择部之间的光吸收区。

    OPTICAL SEMICONDUCTOR ELEMENT AND OPTICAL SEMICONDUCTOR DEVICE
    3.
    发明申请
    OPTICAL SEMICONDUCTOR ELEMENT AND OPTICAL SEMICONDUCTOR DEVICE 审中-公开
    光学半导体元件和光学半导体器件

    公开(公告)号：US20100091805A1

    公开(公告)日：2010-04-15

    申请号：US12640897

    申请日：2009-12-17

    申请人： Tsutomu Ishikawa ,  Takuya Fujii

    发明人： Tsutomu Ishikawa ,  Takuya Fujii

    IPC分类号： H01S5/026 ,  H01S5/06

    CPC分类号： H01S5/06256 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01S5/02276 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0612 ,  H01S5/06258 ,  H01S5/1209 ,  H01L2924/00014

    摘要： An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and has a heater for changing a refractive index of the second optical waveguide region. The metal pattern is provided on an area to be thermally coupled to a temperature control device. The thermal conductive material couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element. The thermal conductive material is electrically separated from the first optical waveguide region.

    摘要翻译： 光学半导体器件包括光学半导体元件，金属图案和至少一种导热材料。 光半导体元件具有第一光波导区域和第二光波导区域。 第二光波导区域光耦合到第一光波导区域并且具有用于改变第二光波导区域的折射率的加热器。 金属图案设置在要耦合到温度控制装置的区域上。 导热材料将金属图案与光半导体元件的第一光波导区域的上表面相连。 导热材料与第一光波导区域电分离。

    Optical semiconductor device and controlling method of the same
    4.
    发明申请
    Optical semiconductor device and controlling method of the same 有权
    光半导体器件及其控制方法

    公开(公告)号：US20070230521A1

    公开(公告)日：2007-10-04

    申请号：US11727953

    申请日：2007-03-29

    申请人： Tsutomu Ishikawa ,  Takuya Fujii

    发明人： Tsutomu Ishikawa ,  Takuya Fujii

    IPC分类号： H01S3/10 ,  H01S3/04 ,  H01S5/00

    CPC分类号： H01S5/02276 ,  G02F1/0147 ,  H01L2224/48091 ,  H01S5/024 ,  H01S5/0261 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/06804 ,  H01S5/1209 ,  H01S5/125 ,  H01L2924/00014

    摘要： An optical semiconductor device includes a wavelength-tunable semiconductor laser chip, a mount carrier, a first temperature sensor and a wire. The wavelength-tunable semiconductor laser chip has a first optical waveguide and a second optical waveguide. The second optical waveguide has a heater on a surface thereof and is optically coupled to the first optical waveguide. The mount carrier is for mounting the wavelength-tunable semiconductor laser chip, and has a first area arranged at a surface of the mount carrier of the first optical waveguide side when the wavelength-tunable semiconductor laser chip is mounted. The first temperature sensor is mounted on the first area. The wire couples between the heater and a second area arranged at a surface of the mount carrier of the second optical waveguide side when the wavelength-tunable semiconductor laser chip is mounted.

    摘要翻译： 光学半导体器件包括波长可调谐半导体激光器芯片，安装载体，第一温度传感器和导线。 波长可调半导体激光器芯片具有第一光波导和第二光波导。 第二光波导在其表面上具有加热器，并且光耦合到第一光波导。 安装载体用于安装波长可调半导体激光器芯片，并且当安装波长可调谐半导体激光器芯片时，具有布置在第一光波导侧的安装载体的表面处的第一区域。 第一温度传感器安装在第一区域上。 当安装波长可调谐半导体激光器芯片时，线耦合在加热器和布置在第二光波导侧的安装载体的表面处的第二区域之间。

    Optical semiconductor device and controlling method of the same
    5.
    发明授权
    Optical semiconductor device and controlling method of the same 有权
    光半导体器件及其控制方法

    公开(公告)号：US07362782B2

    公开(公告)日：2008-04-22

    申请号：US11727953

    申请日：2007-03-29

    申请人： Tsutomu Ishikawa ,  Takuya Fujii

    发明人： Tsutomu Ishikawa ,  Takuya Fujii

    IPC分类号： H01S3/10 ,  H01S3/13 ,  H01S3/00

    CPC分类号： H01S5/02276 ,  G02F1/0147 ,  H01L2224/48091 ,  H01S5/024 ,  H01S5/0261 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/06804 ,  H01S5/1209 ,  H01S5/125 ,  H01L2924/00014

    摘要： An optical semiconductor device includes a wavelength-tunable semiconductor laser chip, a mount carrier, a first temperature sensor and a wire. The wavelength-tunable semiconductor laser chip has a first optical waveguide and a second optical waveguide. The second optical waveguide has a heater on a surface thereof and is optically coupled to the first optical waveguide. The mount carrier is for mounting the wavelength-tunable semiconductor laser chip, and has a first area arranged at a surface of the mount carrier of the first optical waveguide side when the wavelength-tunable semiconductor laser chip is mounted. The first temperature sensor is mounted on the first area. The wire couples between the heater and a second area arranged at a surface of the mount carrier of the second optical waveguide side when the wavelength-tunable semiconductor laser chip is mounted.

    摘要翻译： 光学半导体器件包括波长可调谐半导体激光器芯片，安装载体，第一温度传感器和导线。 波长可调半导体激光器芯片具有第一光波导和第二光波导。 第二光波导在其表面上具有加热器，并且光耦合到第一光波导。 安装载体用于安装波长可调半导体激光器芯片，并且当安装波长可调谐半导体激光器芯片时，具有布置在第一光波导侧的安装载体的表面处的第一区域。 第一温度传感器安装在第一区域上。 当安装波长可调谐半导体激光器芯片时，线耦合在加热器和布置在第二光波导侧的安装载体的表面处的第二区域之间。

    Optical semiconductor element and optical semiconductor device
    6.
    发明申请
    Optical semiconductor element and optical semiconductor device 有权
    光半导体元件和光半导体器件

    公开(公告)号：US20070228551A1

    公开(公告)日：2007-10-04

    申请号：US11730260

    申请日：2007-03-30

    申请人： Tsutomu Ishikawa ,  Takuya Fujii

    发明人： Tsutomu Ishikawa ,  Takuya Fujii

    IPC分类号： H01L33/00 ,  H01L23/053 ,  H01L23/14 ,  H01L31/12 ,  H01L23/12

    CPC分类号： H01S5/06256 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01S5/02276 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0612 ,  H01S5/06258 ,  H01S5/1209 ,  H01L2924/00014

    摘要： An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and has a heater for changing a refractive index of the second optical waveguide region. The metal pattern is provided on an area to be thermally coupled to a temperature control device. The thermal conductive material couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element. The thermal conductive material is electrically separated from the first optical waveguide region.

    摘要翻译： 光学半导体器件包括光学半导体元件，金属图案和至少一种导热材料。 光半导体元件具有第一光波导区域和第二光波导区域。 第二光波导区域光耦合到第一光波导区域并且具有用于改变第二光波导区域的折射率的加热器。 金属图案设置在要耦合到温度控制装置的区域上。 导热材料将金属图案与光半导体元件的第一光波导区域的上表面相连。 导热材料与第一光波导区域电分离。

    Optical semiconductor element and optical semiconductor device
    7.
    发明授权
    Optical semiconductor element and optical semiconductor device 有权
    光半导体元件和光半导体器件

    公开(公告)号：US07656927B2

    公开(公告)日：2010-02-02

    申请号：US12314350

    申请日：2008-12-09

    申请人： Tsutomu Ishikawa ,  Takuya Fujii

    发明人： Tsutomu Ishikawa ,  Takuya Fujii

    IPC分类号： H01S3/03

    CPC分类号： H01S5/06256 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01S5/02276 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0612 ,  H01S5/06258 ,  H01S5/1209 ,  H01L2924/00014

    摘要： An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and has a heater for changing a refractive index of the second optical waveguide region. The metal pattern is provided on an area to be thermally coupled to a temperature control device. The thermal conductive material couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element. The thermal conductive material is electrically separated from the first optical waveguide region.

    摘要翻译： 光学半导体器件包括光学半导体元件，金属图案和至少一种导热材料。 光半导体元件具有第一光波导区域和第二光波导区域。 第二光波导区域光耦合到第一光波导区域并且具有用于改变第二光波导区域的折射率的加热器。 金属图案设置在要耦合到温度控制装置的区域上。 导热材料将金属图案与光半导体元件的第一光波导区域的上表面相连。 导热材料与第一光波导区域电分离。

    Optical semiconductor element and optical semiconductor device
    8.
    发明授权
    Optical semiconductor element and optical semiconductor device 有权
    光半导体元件和光半导体器件

    公开(公告)号：US07474684B2

    公开(公告)日：2009-01-06

    申请号：US11730260

    申请日：2007-03-30

    申请人： Tsutomu Ishikawa ,  Takuya Fujii

    发明人： Tsutomu Ishikawa ,  Takuya Fujii

    IPC分类号： H01S5/00

    CPC分类号： H01S5/06256 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01S5/02276 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0612 ,  H01S5/06258 ,  H01S5/1209 ,  H01L2924/00014

    摘要： An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and has a heater for changing a refractive index of the second optical waveguide region. The metal pattern is provided on an area to be thermally coupled to a temperature control device. The thermal conductive material couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element. The thermal conductive material is electrically separated from the first optical waveguide region.

    摘要翻译： 光学半导体器件包括光学半导体元件，金属图案和至少一种导热材料。 光半导体元件具有第一光波导区域和第二光波导区域。 第二光波导区域光耦合到第一光波导区域并且具有用于改变第二光波导区域的折射率的加热器。 金属图案设置在要耦合到温度控制装置的区域上。 导热材料将金属图案与光半导体元件的第一光波导区域的上表面相连。 导热材料与第一光波导区域电分离。

    Optical semiconductor device and method of controlling the same
    9.
    发明授权
    Optical semiconductor device and method of controlling the same 有权

    公开(公告)号：US07894693B2

    公开(公告)日：2011-02-22

    申请号：US12062830

    申请日：2008-04-04

    申请人： Takuya Fujii

    发明人： Takuya Fujii

    IPC分类号： G02B6/34

    CPC分类号： H01S5/0612 ,  H01S5/0265 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1039 ,  H01S5/1209 ,  H01S5/1212 ,  H01S5/1215 ,  H01S5/125

    摘要： An optical semiconductor device includes a waveguide having one or more first segments having a region that includes a diffractive grating and another region combined to the region, one or more second segments having a region that includes a diffractive grating and another region combined to the region and a plurality of third segments having a region the includes a diffractive grating and another region combined to the region, a length of the second segment being different from that of the first segment, a length of the third segment being shown as L3=L1+(L2−L1)×K1 in which 0.3≦K1≦0.7, L1 is a length of the first segment, L2 is a length of the second segment and L3 is a length of the third segment; and a refractive index control portion controlling refractive index of the first segment through the third segments.