FLEXIBLE TRANSISTORS WITH NEAR-JUNCTION HEAT DISSIPATION

    公开(公告)号:US20210343618A1

    公开(公告)日:2021-11-04

    申请号:US16862825

    申请日:2020-04-30

    Abstract: Flexible transistors and electronic circuits incorporating the transistors are provided. The flexible transistors promote heat dissipation from the active regions of the transistors while preserving their mechanical flexibility and high-frequency performance. The transistor designs utilize thru-substrate vias (TSVs) beneath the active regions of thin-film type transistors on thin flexible substrates. To promote rapid heat dissipation, the TSVs are coated with a material having a high thermal conductivity that transfers heat from the active region of the transistor to a large-area ground.

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