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    Polishing slurry and polishing method
    51.
    发明申请
    Polishing slurry and polishing method 审中-公开
    抛光浆和抛光方法

    公开(公告)号：US20070295934A1

    公开(公告)日：2007-12-27

    申请号：US11808038

    申请日：2007-06-06

    申请人： Yasushi Kurata ,  Katsuyuki Masuda ,  Hiroshi Ono ,  Yasuo Kamigata ,  Kazuhiro Enomoto

    发明人： Yasushi Kurata ,  Katsuyuki Masuda ,  Hiroshi Ono ,  Yasuo Kamigata ,  Kazuhiro Enomoto

    IPC分类号： C09K13/00

    CPC分类号： B24B37/0056 ,  B24B37/044 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1463 ,  H01L21/3212

    摘要： A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from one or more acids (A-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more compounds selected from one or more acids (B-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.

    摘要翻译： 包括氧化剂，金属氧化物溶解器，金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的化合物（A-group），所述酸选自： 其中第一离解酸基团的解离常数Ka（pKa）的对数的负值小于3.7，并且排除了乳酸，邻苯二甲酸，富马酸，马来酸和氨基乙酸的五种酸，铵盐 的A基团和A基团的酯，以及一种或多种选自一种或多种酸（B族）的化合物，所述酸选自其中解离常数Ka（pKa）的对数的负值为 第一离解酸基团为3.7以上，B族的5种酸，铵盐和B族的酯。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架，咪唑骨架，胍等任意一种的化合物的一种或多种的一种或多种 骨架，噻唑骨架和吡唑骨架。 具有高金属抛光速率，降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。

    Method of producing a single crystal of a rare-earth silicate
    54.
    发明授权
    Method of producing a single crystal of a rare-earth silicate 失效
    制备稀土硅酸盐单晶的方法

    公开(公告)号：US5667583A

    公开(公告)日：1997-09-16

    申请号：US413287

    申请日：1995-03-30

    申请人： Yasushi Kurata ,  Kazuhisa Kurashige ,  Hiroyuki Ishibashi

    发明人： Yasushi Kurata ,  Kazuhisa Kurashige ,  Hiroyuki Ishibashi

    IPC分类号： C30B15/00 ,  C30B33/00 ,  C30B15/36

    CPC分类号： C30B15/00 ,  C30B29/34 ,  C30B33/00 ,  Y10S117/902 ,  Y10T117/1044

    摘要： A method of growing a single crystal of a rare-earth silicate is disclosed which comprises heating raw materials in a crucible to thereby obtain a melt of the raw materials, contacting a lower end of a seed crystal with the melt and pulling the seed crystal to thereby grow a single crystal, and wherein the pulling is conducted along an axis of pulling having a gradient of at least 30.degree. from the b-axis ([010] axis) of the single crystal and a gradient of at least 25.degree. from the c-axis ([001] axis) of the single crystal. The invention also provides a method of machining a single crystal of a rare-earth silicate into a cylindrical form, comprising grinding a cylinder whose axis is directed so as to have a gradient of 0.degree. to 65.degree. from the c-axis ([001] axis) of the single crystal. Further, the invention provides a single crystal of a rare-earth silicate machined into a configuration having at least one plane, wherein the plane most close to the (100) plane of the single crystal has a gradient of at least 5.degree. from the (100) plane.

    摘要翻译： 公开了一种生长稀土硅酸盐的单晶的方法，其包括在坩埚中加热原料，从而获得原料的熔体，使晶种的下端与熔体接触并将晶种拉到 从而生长单晶，并且其中沿着具有从单晶的b轴（[010]轴）至少30°的梯度的拉伸轴进行拉伸，并且从该晶体的至少25°的梯度 c轴（[001]轴）。 本发明还提供了将稀土硅酸盐的单晶加工成圆筒状的方法，其特征在于，将从所述c轴取向为0°〜65°的圆柱体（[001] ]轴）。 此外，本发明提供了一种加工成具有至少一个平面的构造的稀土硅酸盐的单晶，其中最接近单晶的（100）面的平面具有至少比（ 100）飞机。

    Polishing slurry for chemical mechanical polishing and method for polishing substrate
    57.
    发明申请
    Polishing slurry for chemical mechanical polishing and method for polishing substrate 有权
    用于化学机械抛光的抛光浆料和抛光底物的方法

    公开(公告)号：US20080176982A1

    公开(公告)日：2008-07-24

    申请号：US11905279

    申请日：2007-09-28

    申请人： Kouji Haga ,  Yuto Ootsuki ,  Yasushi Kurata ,  Kazuhiro Enomoto

    发明人： Kouji Haga ,  Yuto Ootsuki ,  Yasushi Kurata ,  Kazuhiro Enomoto

    IPC分类号： C09G1/16 ,  B24B1/00

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

    摘要： The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate with the polishing slurry. In a CMP (chemical mechanical polishing) technique for flattening inter layer dielectrics, insulating films for shallow trench isolation and the like in a manufacturing process of semiconductor devices, the present invention enables the effective and high-speed polishing.

    摘要翻译： 本发明涉及包含氧化铈颗粒，具有乙炔键（碳与碳之间的三键）和水的有机化合物的CMP抛光浆料，以及用于抛光基材的方法，该方法包括将膜研磨成为 用抛光浆抛光基材。 在半导体器件的制造工艺中，在用于平坦化层间电介质的CMP（化学机械抛光）技术，用于浅沟槽隔离的绝缘膜等中，本发明能够进行有效和高速的抛光。

    CMP POLISHING SLURRY AND METHOD OF POLISHING SUBSTRATE
    59.
    发明申请
    CMP POLISHING SLURRY AND METHOD OF POLISHING SUBSTRATE 审中-公开
    CMP抛光浆料和抛光底材的方法

    公开(公告)号：US20070218811A1

    公开(公告)日：2007-09-20

    申请号：US11576010

    申请日：2005-09-25

    申请人： Yasushi Kurata ,  Kazuhiro Enomoto ,  Naoyuki Koyama ,  Masato Fukasawa

    发明人： Yasushi Kurata ,  Kazuhiro Enomoto ,  Naoyuki Koyama ,  Masato Fukasawa

    IPC分类号： C09G1/00

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

    摘要： A CMP polishing slurry of the present invention, contains cerium oxide particles, a dispersant, a polycarboxylic acid, a strong acid having a pKa of its first dissociable acidic group at 3.2 or less, and water, the pH of the polishing slurry is 4.0 or more and 7.5 or less, wherein the strong acid is contained 100 to 1,000 ppm or 50 to 1,000 ppm, or the strong acid is a monovalent strong acid contained 50 to 500 ppm or is a bivalent strong acid contained 100 to 1,000 ppm. The preferable polycarboxylic acid is a polyacrylic acid. The present invention allows polishing in the CMP methods of surface-smoothening an interlayer dielectric film, a BPSG film and a shallow-trench-isolation insulation film with high speed operation efficiently and easier process management and cause smaller fluctuation in film thickness due to difference in pattern density.

    摘要翻译： 本发明的CMP抛光浆料含有氧化铈颗粒，分散剂，多元羧酸，其第一离解酸性基团的pKa为3.2以下的强酸和水，研磨浆料的pH为4.0或 更优选为7.5以下，其中强酸含量为100〜1000ppm或50〜1000ppm，强酸为50〜500ppm的一价强酸，或二价强酸为100〜1000ppm。 优选的多元羧酸是聚丙烯酸。 本发明允许在CMP方法中对具有高速操作的层间电介质膜，BPSG膜和浅沟槽隔离绝缘膜的表面平滑化进行抛光，从而有效地且更容易地进行工艺管理，并且由于差异导致膜厚度的变动较小 图案密度。