公开(公告)号：US20100142878A1

公开(公告)日：2010-06-10

申请号：US12504607

申请日：2009-07-16

Applicant: Jeong Woo PARK ,  Jongbum You ,  Gyungock Kim

Inventor： Jeong Woo PARK ,  Jongbum You ,  Gyungock Kim

IPC: G02F1/01 ,  G02B6/12 ,  H01L21/22

CPC classification number: G02F1/025 ,  G02F2001/0156 ,  G02F2201/063 ,  G02F2201/12 ,  G02F2202/105 ,  G02F2202/32

Abstract: An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure.

Abstract translation: 提供吸收调制器。 吸收调制器包括基板，设置在基板上的绝缘层，以及在绝缘层上具有P-I-N二极管结构的波导。 当调制输入到波导的光时，P-I-N二极管结构中的本征区域的吸收变化。 吸收调制器由于大大降低了P-I-N二极管结构的截面面积而获得了高速，低功耗，小尺寸等改进的特性。

公开(公告)号：US07728327B2

公开(公告)日：2010-06-01

申请号：US11011878

申请日：2004-12-13

Applicant: Hyun Tak Kim ,  Doo Hyeb Youn ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yong Sik Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Hyun Kim

Inventor： Hyun Tak Kim ,  Doo Hyeb Youn ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yong Sik Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Hyun Kim

IPC: H01L29/04

CPC classification number: H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625

Abstract: Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

Abstract translation: 提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的空穴层中的孔，以及设置在突发上的第二电极层 MIT半导体有机或无机材料层。 通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。

公开(公告)号：US20090261383A1

公开(公告)日：2009-10-22

申请号：US12441381

申请日：2007-08-17

Applicant: Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

Inventor： Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

IPC: H01L29/80

CPC classification number: G02F1/025 ,  G02F1/2257 ,  H01L33/0037

Abstract: Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.

Abstract translation: 提供了具有应变埋入通道区域的光学装置。 该光学器件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的栅极绝缘层; 形成在栅极绝缘层上的与第一导电类型相反的第二导电类型的栅极; 形成在所述半导体衬底下的高密度掺杂剂扩散区，并且掺杂有比所述半导体衬底更高密度的第一导电型掺杂剂; 由半导体材料形成的应变掩埋沟道区域，具有与形成半导体衬底的材料不同的晶格参数，并且在栅极绝缘层和半导体衬底之间延伸以接触高密度掺杂剂扩散区域; 以及形成在栅绝缘层和应变埋入沟道区之间的半导体盖层。

公开(公告)号：US20080131054A1

公开(公告)日：2008-06-05

申请号：US11856498

申请日：2007-09-17

Applicant: Duk Jun Kim ,  Jong Moo Lee ,  Junghyung Pyo ,  Gyungock Kim

Inventor： Duk Jun Kim ,  Jong Moo Lee ,  Junghyung Pyo ,  Gyungock Kim

IPC: G02B6/26

CPC classification number: G02B6/12028 ,  G02B6/12011

Abstract: An optical filter module for wavelength multiplexing and demultiplexing and a method of manufacturing the same are provided. The optical filter module for wavelength multiplexing and demultiplexing includes: at least one or more input waveguides; an input-stage star coupler in the form of a slab waveguide connected to the input waveguides; array waveguide which is connected to the input-stage star coupler and in which a plurality of individual waveguides, each of which has an optical path having a predetermined length different to those of the other waveguides and has a heterogeneous waveguide interval formed of a material having a different refraction index from that of a core of the waveguides, are sequentially arranged; an output-stage star coupler in the form of a slab waveguide connected to the array waveguides; and at least one or more output waveguides connected to the output-stage star coupler. According to the optical filter module and the method of manufacturing the same, heterogeneous waveguide intervals having core materials different from those of conventional waveguides are introduced in predetermined areas of array waveguides, thereby reducing polarized light and temperature dependency and at the same time effectively removing optical coupling loss, which can occur at both ends of a heterogeneous waveguide interval, without an additional process of forming waveguides.

Abstract translation: 提供了一种用于波分复用和解复用的滤光器模块及其制造方法。 用于波长复用和解复用的滤光器模块包括：至少一个或多个输入波导; 输入级星形耦合器，其形式为连接到输入波导的平板波导; 阵列波导，其连接到输入级星形耦合器，并且其中多个单独的波导具有与其它波导的预定长度不同的预定长度的光路，并且具有由具有 依次布置与波导的芯的折射率不同的折射率; 输出级星形耦合器，其形式为连接到阵列波导的平板波导; 以及连接到输出级星形耦合器的至少一个或多个输出波导。 根据光滤波器模块及其制造方法，在阵列波导的预定区域中引入具有与常规波导不同的芯材料的异质波导间隔，从而降低偏振光和温度依赖性，同时有效地去除光 耦合损耗，其可以发生在异质波导间隔的两端，而没有形成波导的附加工艺。

公开(公告)号：US06987290B2

公开(公告)日：2006-01-17

申请号：US10866274

申请日：2004-06-10

Applicant: Hyun Tak Kim ,  Doo Hyeb Youn ,  Kwang Yong Kang ,  Byung Gyu Chae ,  Yong Sik Lim ,  Seong Hyun Kim ,  Sungyul Maeng ,  Gyungock Kim

Inventor： Hyun Tak Kim ,  Doo Hyeb Youn ,  Kwang Yong Kang ,  Byung Gyu Chae ,  Yong Sik Lim ,  Seong Hyun Kim ,  Sungyul Maeng ,  Gyungock Kim

IPC: H01L39/16

CPC classification number: H01L45/00

Abstract: A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.

Abstract translation: 提出了包括突变金属 - 绝缘体相变装置的电流跳跃控制电路，并且包括源极，突变金属 - 绝缘体相变装置和电阻元件。 突变金属 - 绝缘体相变装置包括连接到源极的第一和第二电极，并且当在第一电极和第二电极之间施加电场时，显示出电流跳跃的突变金属 - 绝缘体相变特性。 电阻元件连接在源极和突变金属 - 绝缘体相变器件之间，以控制流过突发金属 - 绝缘体相变器件的跳跃电流。 根据上述电流控制电路，能够防止突变金属 - 绝缘体相变装置由于大量的电流而发生故障，因此电流跳跃控制电路可以应用于各种应用领域。

公开(公告)号：US08928107B2

公开(公告)日：2015-01-06

申请号：US13284818

申请日：2011-10-28

Applicant: Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L31/06 ,  H01L31/102 ,  H01L31/18

CPC classification number: H01L31/102 ,  H01L31/18

Abstract: Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively.

Abstract translation: 提供了光检测装置及其制造方法。 光检测装置包括在基板的表面上的第一导电图案，在基板上的绝缘图案，并且具有露出第一导电图案的至少一部分的开口，填充绝缘图案的开口的光吸收层，并且具有 设置在基本上高于绝缘图案的顶表面的高度的顶表面，在光吸收层上的第二导电图案，以及分别电连接到第一和第二导电图案的连接端子。

公开(公告)号：US08823121B2

公开(公告)日：2014-09-02

申请号：US13550364

申请日：2012-07-16

Applicant: Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

Inventor： Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

IPC: H01L31/00 ,  G02B6/12 ,  H01L31/0352 ,  G02B6/13 ,  G02B6/136

CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。

公开(公告)号：US08698271B2

公开(公告)日：2014-04-15

申请号：US12404275

申请日：2009-03-13

Applicant: Dongwoo Suh ,  Sang Hoon Kim ,  Gyungock Kim ,  JiHo Joo

Inventor： Dongwoo Suh ,  Sang Hoon Kim ,  Gyungock Kim ,  JiHo Joo

IPC: H01L33/00 ,  H01L21/20

CPC classification number: H01L31/028 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L31/103 ,  H01L31/1808 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.

Abstract translation: 提供了具有不使用缓冲层形成的锗外延层的锗光电检测器及其制造方法。 在该方法中，在基板上形成无定形锗层。 将非晶锗层加热至高温以形成结晶的锗层。 在结晶的锗层上形成锗外延层。

公开(公告)号：US08394705B2

公开(公告)日：2013-03-12

申请号：US12783216

申请日：2010-05-19

Applicant: In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

Inventor： In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

IPC: H01L21/76

CPC classification number: G02B6/136 ,  G02B6/132 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2203/15 ,  H01L27/1203

Abstract: Provided is a method of manufacturing a semiconductor device. According to the method, a first buried oxide layer is formed in the semiconductor substrate in a first region, such that a first semiconductor layer is defined on the first buried oxide layer. An active portion is defined by forming a trench in the semiconductor substrate in a second region. A capping semiconductor pattern is formed on a top surface and an upper portion of a sidewall of the active portion. An oxide layer is formed by oxidizing the capping semiconductor pattern and an exposed lower portion of the sidewall of the active portion, such that the oxide layer surrounds a non-oxidized portion of the active portion. The non-oxidized portion of the active portion is a core and one end of the core is connected to a first optical device formed at the first semiconductor.

Abstract translation: 提供一种制造半导体器件的方法。 根据该方法，在第一区域中的半导体衬底中形成第一掩埋氧化物层，使得第一半导体层被限定在第一掩埋氧化物层上。 通过在第二区域中在半导体衬底中形成沟槽来限定有源部分。 在有源部分的侧壁的顶表面和上部形成封盖半导体图案。 通过氧化覆盖半导体图案和有源部分的侧壁的暴露下部来形成氧化物层，使得氧化物层包围有源部分的未氧化部分。 有源部分的未氧化部分是芯，并且芯的一端连接到形成在第一半导体处的第一光学器件。

公开(公告)号：US08242571B2

公开(公告)日：2012-08-14

申请号：US12763990

申请日：2010-04-20

Applicant: Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

Inventor： Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

IPC: H01L31/0232 ,  G02B6/42

CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。