公开(公告)号：US20070032683A1

公开(公告)日：2007-02-08

申请号：US11336869

申请日：2006-01-23

申请人： Xinde Xu ,  Bin Shao ,  Di Zhou ,  Shuangming Ye ,  Yanfeng Wang ,  Boqiu Chen

发明人： Xinde Xu ,  Bin Shao ,  Di Zhou ,  Shuangming Ye ,  Yanfeng Wang ,  Boqiu Chen

IPC分类号： C07C35/21 ,  C07C35/06

CPC分类号： C07C403/24

摘要： A process for isolation and purification of xanthophylls crystals from plant oleoresin is disclosed. The organic solvents involved in the process is no other than food grade alcohol. The process includes saponifying the plant oleoresin containing xanthophyll diesters, neutralizing the saponified reaction mixture with an acid and washing water-soluble impurities and other fat-soluble oil with warm water and alcohol, respectively. The process can improve purity and yield of products, by which the content and the recovery of xanthophylls are as high as 90% and 80% respectively. And the process is economical and easy to perform in industrial production.

公开(公告)号：US20140001570A1

公开(公告)日：2014-01-02

申请号：US13537101

申请日：2012-06-29

申请人： MaryJane Brodsky ,  Michael P. Chudzik ,  Min Dai ,  Joseph F. Shepard, JR. ,  Shahab Siddiqui ,  Yanfeng Wang ,  Jinping Liu

发明人： MaryJane Brodsky ,  Michael P. Chudzik ,  Min Dai ,  Joseph F. Shepard, JR. ,  Shahab Siddiqui ,  Yanfeng Wang ,  Jinping Liu

IPC分类号： H01L27/088 ,  H01L21/31

CPC分类号： H01L21/02321 ,  H01L21/28194 ,  H01L21/3115 ,  H01L21/823462 ,  H01L29/513 ,  H01L29/517

摘要： A composite high dielectric constant (high-k) gate dielectric includes a stack of a doped high-k gate dielectric and an undoped high-k gate dielectric. The doped high-k gate dielectric can be formed by providing a stack of a first high-k dielectric material layer and a dopant metal layer and annealing the stack to induce the diffusion of the dopant metal into the first high-k dielectric material layer. The undoped high-k gate dielectric is formed by subsequently depositing a second high-k dielectric material layer. The composite high-k gate dielectric can provide an increased gate-leakage oxide thickness without increasing inversion oxide thickness.

摘要翻译： 复合高介电常数（high-k）栅极电介质包括掺杂的高k栅极电介质和未掺杂的高k栅极电介质的堆叠。 可以通过提供第一高k电介质材料层和掺杂剂金属层的堆叠来形成掺杂的高k栅极电介质，并且对叠层进行退火以引起掺杂剂金属扩散到第一高k电介质材料层中。 通过随后沉积第二高k电介质材料层形成未掺杂的高k栅极电介质。 复合高k栅极电介质可以提供增加的栅极 - 漏极氧化物厚度，而不增加反转氧化物厚度。

公开(公告)号：US08619060B2

公开(公告)日：2013-12-31

申请号：US12578717

申请日：2009-10-14

申请人： Yanfeng Wang

发明人： Yanfeng Wang

IPC分类号： G06F3/042

CPC分类号： G06F3/0421 ,  G06F3/0428 ,  G06F2203/04808

摘要： The present invention relates to a multi-touch positioning method and a multi-touch screen. The multi-touch positioning method comprising: emitting, by a first infrared ray generator set at a first angle of a display panel, infrared rays at a first wavelength; emitting, by a second infrared ray generator set at a second angle, infrared rays at a second wavelength; receiving the infrared rays of the first wavelength and generating a first infrared ray image by a first infrared ray image sensor set at an opposite angle of the first angle; receiving the infrared rays of the second wavelength and generating a second infrared ray image by a second infrared ray image sensor set at an opposite angle of the second angle; and performing processings for the first infrared ray image and the second infrared ray image to determine at least one touch point.

摘要翻译： 本发明涉及多点触摸定位方法和多点触摸屏。 所述多点触摸定位方法包括：通过由显示面板的第一角度设置的第一红外线发生器发射第一波长的红外线; 通过以第二角度设置的第二红外线发生器发射第二波长的红外线; 接收第一波长的红外线并通过设置在与第一角度相反的角度的第一红外线图像传感器产生第一红外线图像; 接收第二波长的红外线，并且以与第二角度相反的角度设置的第二红外线图像传感器产生第二红外线图像; 以及对所述第一红外线图像和所述第二红外线图像执行处理以确定至少一个触摸点。

公开(公告)号：US20130162363A1

公开(公告)日：2013-06-27

申请号：US13400129

申请日：2012-02-20

申请人： Peng Han ,  Dawei Guo ,  Jiazhou Liu ,  Yanfeng Wang

发明人： Peng Han ,  Dawei Guo ,  Jiazhou Liu ,  Yanfeng Wang

IPC分类号： H03C1/00 ,  G06G7/12

CPC分类号： H03C1/36 ,  H03D7/1441 ,  H03D7/1458 ,  H03D7/1491 ,  H03D2200/0033 ,  H03D2200/0052 ,  H04L27/04

摘要： An ASK modulator includes a baseband unit which obtains a sequence comprising at least one amplitude value and adds an additional value to each of the at least one amplitude value to generate a modified sequence; a digital-to-analog converter coupled to the baseband unit, the digital-to-analog converter converts the modified sequence to generate a first signal, the additional value is determined based on a half scale of the digital-analog converter; and a mixer which receives the first signal and a second signal and generate a modulated signal by mixing the first signal with the second signal.

摘要翻译： ASK调制器包括：基带单元，其获得包括至少一个幅度值的序列，并且对所述至少一个幅度值中的每一个增加附加值以生成修改的序列; 耦合到所述基带单元的数模转换器，所述数模转换器转换所述经修改的序列以产生第一信号，所述附加值基于所述数模转换器的半标度来确定; 以及混合器，其接收第一信号和第二信号，并通过将第一信号与第二信号混合来产生调制信号。

公开(公告)号：US20120168874A1

公开(公告)日：2012-07-05

申请号：US13409693

申请日：2012-03-01

申请人： Sunfei Fang ,  Brian J. Greene ,  Effendi Leobandung ,  Qingqing Liang ,  Edward P. Maciejewski ,  Yanfeng Wang

发明人： Sunfei Fang ,  Brian J. Greene ,  Effendi Leobandung ,  Qingqing Liang ,  Edward P. Maciejewski ,  Yanfeng Wang

IPC分类号： H01L27/092 ,  H01L29/78

CPC分类号： H01L21/823857 ,  H01L21/28247 ,  H01L21/823842 ,  H01L21/823864 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/66636

摘要： Threshold voltage controlled semiconductor structures are provided in which a conformal nitride-containing liner is located on at least exposed sidewalls of a patterned gate dielectric material having a dielectric constant of greater than silicon oxide. The conformal nitride-containing liner is a thin layer that is formed using a low temperature (less than 500° C.) nitridation process.

摘要翻译： 提供了阈值电压控制的半导体结构，其中共形含氮化物的衬垫位于具有大于氧化硅的介电常数的图案化栅极电介质材料的至少暴露的侧壁上。 含氮氮化物的内衬是使用低温（小于500℃）的氮化工艺形成的薄层。

公开(公告)号：US07750414B2

公开(公告)日：2010-07-06

申请号：US12128772

申请日：2008-05-29

申请人： Huilong Zhu ,  Yanfeng Wang ,  Daewon Yang ,  Huajie Chen

发明人： Huilong Zhu ,  Yanfeng Wang ,  Daewon Yang ,  Huajie Chen

IPC分类号： H01L31/062 ,  H01L21/336

CPC分类号： H01L23/3192 ,  H01L21/8238 ,  H01L21/823807 ,  H01L21/823828 ,  H01L2924/0002 ,  H01L2924/3025 ,  H01L2924/00

摘要： A structure comprises at least one transistor on a substrate, an insulator layer over the transistor, and an ion stopping layer over the insulator layer. The ion stopping layer comprises a portion of the insulator layer that is damaged and has either argon ion damage or nitrogen ion damage.

摘要翻译： 一种结构包括在衬底上的至少一个晶体管，晶体管上的绝缘体层，以及绝缘体层上的离子阻挡层。 离子停止层包括被破坏并具有氩离子损伤或氮离子损伤的绝缘体层的一部分。

公开(公告)号：US20090085905A1

公开(公告)日：2009-04-02

申请号：US12126431

申请日：2008-05-23

申请人： Guangliang Shang ,  Yanfeng Wang ,  Changlin Leng ,  Liang Zhang

发明人： Guangliang Shang ,  Yanfeng Wang ,  Changlin Leng ,  Liang Zhang

IPC分类号： G06F3/038 ,  G09G3/36

CPC分类号： G09G3/3688 ,  G09G2310/027 ,  G09G2320/0673

摘要： The present invention relates to a Gamma-voltage generation device and a Liquid Crystal Display (LCD) device, wherein the Gamma-voltage generation device comprises: a voltage series generation unit for generating a plurality of groups of voltage series; and a multi-path selection unit for selecting one voltage value from each group of voltage series, respectively, according to a voltage selection signal and outputting the same to generate a needed Gamma-voltage series. The LCD device comprises a display panel, a row driver and a column driver, a timing controller, an image analyzing and processing unit, and a Gamma-voltage series generation device. The present invention achieves dynamic Gamma-voltage generation by choosing among a plurality of groups of voltages to output the needed Gamma-voltage series. Further, the plurality of groups of Gamma-voltage series could be obtained with resistor networks and such devices in the existing art as DAC and the like are unnecessary, thereby the response rate is improved and the cost is reduced.

摘要翻译： 本发明涉及一种伽马电压产生装置和液晶显示器（LCD）装置，其中，伽马电压产生装置包括：电压序列产生单元，用于产生多组电压系列; 以及多路径选择单元，用于根据电压选择信号分别从每组电压序列中选择一个电压值，并输出该电压值以产生所需的伽马电压系列。 LCD装置包括显示面板，行驱动器和列驱动器，时序控制器，图像分析处理单元和伽玛电压系列生成装置。 本发明通过选择多组电压来实现动态伽马电压的产生，以输出所需的伽玛电压系列。 此外，可以使用电阻网络获得多组伽马电压系列，并且在现有技术中这样的装置不需要DAC等，从而提高响应速率并降低成本。

公开(公告)号：US20080277311A1

公开(公告)日：2008-11-13

申请号：US11815520

申请日：2005-02-05

申请人： Wilson Wang ,  Hewei Li ,  Yanfeng Wang ,  Hongfei Wang

发明人： Wilson Wang ,  Hewei Li ,  Yanfeng Wang ,  Hongfei Wang

IPC分类号： A61J1/03

CPC分类号： A61J1/03 ,  A61J1/035 ,  B65D83/0445

摘要： A packaging box for medicaments, which can comprise: a bottom panel (1); a first-top panel (4); a second-top panel (5); a first-side panel (3a), being between said bottom panel (1) and first-top panel (4) and connected to them; a second-side panel (3b), being between said bottom panel (1) and second-top panel (5) and connected to them; a third-top panel (6), being connected to the second-top panel (5) and being opposing to said second-side panel (3b); some blisters (8) for the storage of medicaments, being provide don the third-top panel (6) and protruding therefrom; and supporting means (2) being provided on the internal surface of said bottom panel (1) so as to support said third-top panel (6).

摘要翻译： 一种用于药物的包装盒，其可以包括：底板（1）; 第一面板（4）; 第二顶板（5）; 第一侧板（3a），位于所述底板（1）和第一顶板（4）之间，并与其连接; 第二侧板（3b），位于所述底板（1）和第二顶板（5）之间并连接到它们; 第三顶板（6），连接到第二顶板（5）并与所述第二侧板（3b）相对; 一些用于储存药物的水疱（8），提供第三顶板（6）并从其突出; 以及在所述底板（1）的内表面上设置以支撑所述第三顶板（6）的支撑装置（2）。

公开(公告)号：US07145877B2

公开(公告)日：2006-12-05

申请号：US10403396

申请日：2003-03-31

申请人： Sriram Natarajan ,  Sharat Prasad ,  Yu Deng ,  Yanfeng Wang

发明人： Sriram Natarajan ,  Sharat Prasad ,  Yu Deng ,  Yanfeng Wang

IPC分类号： H04L12/26

CPC分类号： H04L47/10 ,  H04J3/1617 ,  H04L47/30 ,  H04L47/39

摘要： The Fibre-Channel flow control mechanism is augmented to facilitate efficient data exchange between Fibre-Channel ports over extended distances. A supplemental buffer mechanism may be maintained as part of an interface to a transport network used to carry Fibre-Channel traffic. The transport network interface makes a remote Fibre-Channel port aware of the augmented local receiver buffer capacity by intercepting certain frames used in link establishment and substituting an enhanced buffer capacity for the local Fibre-Channel port's internal buffer capacity. This technique provides improved throughput and readily accommodates large distances and large frame sizes.

摘要翻译： 增加了光纤通道流量控制机制，以便在更长距离的光纤通道端口之间实现有效的数据交换。 补充缓冲机制可以被维持为用于承载光纤通道业务的传输网络的接口的一部分。 传输网络接口使远程光纤通道端口通过拦截链路建立中使用的某些帧，并将本地光纤通道端口的内部缓冲区容量的增强缓冲区容量替换，来识别增强的本地接收器缓冲区容量。 这种技术提高了产量，并且容易适应大距离和大的框架尺寸。