公开(公告)号：US20120149147A1

公开(公告)日：2012-06-14

申请号：US13399369

申请日：2012-02-17

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroki OHARA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroki OHARA

IPC分类号： H01L21/36

CPC分类号： H01L21/465 ,  H01L21/02565 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/477 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

摘要翻译： 一种用于大功率应用的半导体器件，其中提供了具有高质量生产率的新型半导体材料。 形成氧化物半导体膜，然后对暴露的氧化物半导体膜进行第一热处理，以便减少氧化物半导体膜中的杂质如水分或氢。 接下来，为了进一步减少氧化物半导体膜中的杂质，例如水分或氢气，通过离子注入法，离子掺杂法等将氧添加到氧化物半导体膜中，之后，第二热处理为 在暴露的氧化物半导体膜上进行。

公开(公告)号：US20110210328A1

公开(公告)日：2011-09-01

申请号：US13104548

申请日：2011-05-10

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

摘要： A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

公开(公告)号：US20110210324A1

公开(公告)日：2011-09-01

申请号：US12869327

申请日：2010-08-26

申请人： Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA

发明人： Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA

IPC分类号： H01L33/16

CPC分类号： H01L27/1225 ,  H01L27/322 ,  H01L27/3262

摘要： It is an object to provide a light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors corresponding to characteristics of the plural kinds of circuits are provided. An inverted coplanar thin film transistor in which an oxide semiconductor layer overlaps with a source electrode layer and a drain electrode layer is used for a pixel, and a channel-etched thin film transistor is used for a driver circuit. A color filter layer is provided between the pixel thin film transistor and a light-emitting element which is electrically connected to the pixel thin film transistor so as to overlap with the light-emitting element.

摘要翻译： 本发明的目的是提供一种在一个衬底上形成多种电路的发光器件，并且提供与多种电路的特性对应的多种薄膜晶体管。 将其中与源电极层和漏电极层重叠的氧化物半导体层用于像素的反转共面薄膜晶体管，并且将沟道蚀刻薄膜晶体管用于驱动器电路。 像素薄膜晶体管和与像素薄膜晶体管电连接以与发光元件重叠的发光元件设置滤色器层。

公开(公告)号：US20110124153A1

公开(公告)日：2011-05-26

申请号：US12948222

申请日：2010-11-17

申请人： Miyuki HOSOBA ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

发明人： Miyuki HOSOBA ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC分类号： H01L21/20

CPC分类号： H01L29/78696 ,  G02F1/133528 ,  G02F1/1339 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/167 ,  G02F2001/133302 ,  G02F2001/133531 ,  G02F2201/121 ,  G02F2201/123 ,  G09G3/3677 ,  G09G2310/0286 ,  G09G2310/08 ,  H01L21/02107 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02672 ,  H01L21/324 ,  H01L21/477 ,  H01L21/67115 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869

摘要： An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.

摘要翻译： 目的在于提供一种使用氧化物半导体的具有稳定电特性的半导体器件。 在氮气或惰性气体气氛（例如氩气或氦气）或减压下对氧化物半导体层进行脱水或脱氢处理的热处理，并进行用于在 氧气和氮气气氛或空气（露点优选低于或等于-40℃，更优选低于或等于-50℃）气氛。 因此，氧化物半导体层被高度纯化，从而形成i型氧化物半导体层。 制造包括具有氧化物半导体层的薄膜晶体管的半导体器件。

公开(公告)号：US20110114942A1

公开(公告)日：2011-05-19

申请号：US12943558

申请日：2010-11-10

申请人： Kengo AKIMOTO ,  Junichiro SAKATA ,  Yoshiaki OIKAWA ,  Shunpei YAMAZAKI

发明人： Kengo AKIMOTO ,  Junichiro SAKATA ,  Yoshiaki OIKAWA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/45

摘要： It is an object to provide a method for manufacturing a highly reliable semiconductor device having a thin film transistor formed using an oxide semiconductor and having stable electric characteristics. The semiconductor device includes an oxide semiconductor film overlapping with a gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode which are in contact with the oxide semiconductor film. The source electrode and the drain electrode include a mixture, metal compound, or alloy containing one or more of a metal with a low electronegativity such as titanium, magnesium, yttrium, aluminum, tungsten, and molybdenum. The concentration of hydrogen in the source electrode and the drain electrode is 1.2 times, preferably 5 times or more as high as that of hydrogen in the oxide semiconductor film.

摘要翻译： 本发明的目的是提供一种用于制造具有使用氧化物半导体形成并且具有稳定的电特性的薄膜晶体管的高度可靠的半导体器件的方法。 半导体器件包括与栅电极重叠的氧化物半导体膜，其间插入有栅极绝缘膜; 以及与氧化物半导体膜接触的源电极和漏电极。 源电极和漏极包括含有一种或多种具有低电负性的金属如钛，镁，钇，铝，钨和钼的混合物，金属化合物或合金。 源电极和漏电极中的氢浓度是氧化物半导体膜中的氢的浓度的1.2倍，优选为5倍以上。

公开(公告)号：US20110084271A1

公开(公告)日：2011-04-14

申请号：US12899962

申请日：2010-10-07

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Kosei NODA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Kosei NODA

IPC分类号： H01L29/12 ,  H01L33/08 ,  B82Y99/00

CPC分类号： H01L27/1225 ,  B82Y30/00 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/4908

摘要： Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a switching element. The semiconductor device includes a driver circuit portion and a pixel portion over one substrate, and the pixel portion comprises a light-transmitting bottom-gate transistor. The light-transmitting bottom-gate transistor comprises: a transparent gate electrode layer; an oxide semiconductor layer over the gate electrode layer, a superficial layer of the oxide semiconductor layer including comprising a microcrystal group of nanocrystals; and source and drain electrode layers formed over the oxide semiconductor layer, the source and drain electrode layers comprising a light-transmitting oxide conductive layer.

摘要翻译： 公开了一种高可靠性的半导体器件及其制造方法，其通过使用具有良好的电特性和高可靠性的晶体管作为开关元件来实现。 半导体器件包括驱动电路部分和一个衬底上的像素部分，并且像素部分包括透光底栅晶体管。 透光底栅晶体管包括：透明栅极电极层; 在所述栅极电极层上的氧化物半导体层，所述氧化物半导体层的表面层包括微晶纳米晶体组; 以及形成在所述氧化物半导体层上的源极和漏极电极层，所述源极和漏极电极层包括透光氧化物导电层。

公开(公告)号：US20110032444A1

公开(公告)日：2011-02-10

申请号：US12848404

申请日：2010-08-02

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI ,  Hotaka MARUYAMA ,  Masashi TSUBUKU

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI ,  Hotaka MARUYAMA ,  Masashi TSUBUKU

IPC分类号： G02F1/136 ,  H01L27/12 ,  H01L21/34 ,  H01L21/84

CPC分类号： H01L27/1225 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/133528 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/13454 ,  G02F1/136204 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/133357 ,  G02F2201/123 ,  G11C19/28 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.

摘要翻译： 目的是提高半导体器件的可靠性。 提供了包括驱动电路部分和在相同基板上的显示部分（也称为像素部分）的半导体器件。 驱动器电路部分和显示部分包括其中半导体层包括氧化物半导体的薄膜晶体管; 第一布线 和第二布线。 薄膜晶体管各自包括源极电极层和漏极电极层。 在驱动电路部分的薄膜晶体管中，半导体层夹在栅电极层和导电层之间。 第一布线和第二布线在通过氧化物导电层设置在栅极绝缘膜中的开口中彼此电连接。

公开(公告)号：US20110031497A1

公开(公告)日：2011-02-10

申请号：US12848397

申请日：2010-08-02

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Miyuki HOSOBA ,  Eriko NISHIDA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Miyuki HOSOBA ,  Eriko NISHIDA

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L29/45 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124

摘要： One object of the present invention is to increase an aperture ratio of a semiconductor device. A pixel portion and a driver circuit are provided over one substrate. The first thin film transistor (TFT) in the pixel portion includes: a gate electrode layer over the substrate; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain electrode layers over the oxide semiconductor layer; over the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, a protective insulating layer which is in contact with part of the oxide semiconductor layer; and a pixel electrode layer over the protective insulating layer. The pixel portion has light-transmitting properties. Further, a material of source and drain electrode layers of a second TFT in the driver circuit is different from a material of those of the first TFT.

摘要翻译： 本发明的一个目的是增加半导体器件的开口率。 像素部分和驱动电路设置在一个基板上。 像素部中的第一薄膜晶体管（TFT）包括：在基板上的栅电极层; 栅电极层上的栅极绝缘层; 栅极绝缘层上的氧化物半导体层; 氧化物半导体层上的源极和漏极电极层; 栅极绝缘层，氧化物半导体层，源极和漏极电极层上的与氧化物半导体层的一部分接触的保护绝缘层; 以及保护绝缘层上的像素电极层。 像素部分具有透光性。 此外，驱动电路中的第二TFT的源极和漏极电极层的材料与第一TFT的材料不同。

公开(公告)号：US20110012117A1

公开(公告)日：2011-01-20

申请号：US12835906

申请日：2010-07-14

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/7869

摘要： An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor.

摘要翻译： 目的是降低半导体器件的制造成本。 目的是提高半导体器件的开口率。 目的是使半导体器件的显示部分显示更高清晰度的图像。 目的在于提供一种可以高速运转的半导体装置。 该半导体器件包括一个基板上的驱动电路部分和显示部分。 驱动器电路部分包括：使用金属形成源电极和漏极的驱动电路TFT，并且使用氧化物半导体形成沟道层; 以及使用金属形成的驱动电路布线。 显示部分包括：使用氧化物导体形成源极和漏极的像素TFT，并且使用氧化物半导体形成半导体层; 以及使用氧化物导体形成的显示布线。

公开(公告)号：US20110012106A1

公开(公告)日：2011-01-20

申请号：US12835119

申请日：2010-07-13

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Mari TERASHIMA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Mari TERASHIMA

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L27/124 ,  G02F1/13454 ,  G02F2201/40 ,  G02F2202/10 ,  H01L27/1225

摘要： A semiconductor device is provided in which a pixel portion and a driver circuit each including a thin film transistor are provided over one substrate; the thin film transistor in the pixel portion includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer having an end region with a small thickness, an oxide insulating layer in contact with part of the oxide semiconductor layer, source and drain electrode layers, and a pixel electrode layer; the thin film transistor in the pixel portion has a light-transmitting property; and source and drain electrode layers of the thin film transistor in the driver circuit portion are formed using a conductive material having lower resistance than a material of the source and drain electrode layer in the pixel portion.

摘要翻译： 提供一种半导体器件，其中在一个衬底上设置每个包括薄膜晶体管的像素部分和驱动器电路; 像素部分中的薄膜晶体管包括栅极电极层，栅极绝缘层，具有小厚度的端部区域的氧化物半导体层，与氧化物半导体层的一部分接触的氧化物绝缘层，源极和漏极 层和像素电极层; 像素部分中的薄膜晶体管具有透光性; 并且使用具有比像素部分中的源极和漏极电极层的材料更低的电阻的导电材料形成驱动电路部分中的薄膜晶体管的源极和漏极电极层。