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公开(公告)号：US08207593B2
公开(公告)日：2012-06-26
申请号：US12510589
申请日：2009-07-28
IPC分类号： H01L29/00
CPC分类号： H01L45/04 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/146 , Y10S977/773
摘要： A memristor includes a first electrode having a first surface, at least one electrically conductive nanostructure provided on the first surface, in which the at least one electrically conductive nanostructure is relatively smaller than a width of the first electrode, a switching material positioned upon said first surface, in which the switching material covers the at least one electrically conductive nanostructure, and a second electrode positioned upon the switching material substantially in line with the at least one electrically conductive nanostructure, in which an active region in the switching material is formed substantially between the at least one electrically conductive nanostructure and the first electrode.
摘要翻译： 忆阻器包括具有第一表面的第一电极，设置在第一表面上的至少一个导电纳米结构，其中至少一个导电纳米结构相对小于第一电极的宽度，开关材料位于所述第一表面上 其中所述开关材料覆盖所述至少一个导电纳米结构，以及位于所述开关材料上的基本上与所述至少一个导电纳米结构一致的第二电极，其中所述开关材料中的有源区域基本上形成在所述至少一个导电纳米结构之间 所述至少一个导电纳米结构和所述第一电极。
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52.发明申请公开(公告)号：US20120104345A1
公开(公告)日：2012-05-03
申请号：US12914935
申请日：2010-10-28
CPC分类号： H01L27/2463 , H01L45/06 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1616
摘要： Memristor systems and method for fabricating memristor system are disclosed. In one aspect, a memristor includes a first electrode, a second electrode, and a junction disposed between the first electrode and the second electrode. The junction includes at least one layer such that each layer has a plurality of dopant sub-layers disposed between insulating sub-layers. The sub-layers are oriented substantially parallel to the first and second electrodes.
摘要翻译： 记忆体系统和制造忆阻器系统的方法被公开。 一方面，忆阻器包括第一电极，第二电极和设置在第一电极和第二电极之间的结。 该结包括至少一个层，使得每个层具有设置在绝缘子层之间的多个掺杂剂子层。 子层的取向基本上平行于第一和第二电极。
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公开(公告)号：US20120074378A1
公开(公告)日：2012-03-29
申请号：US12889389
申请日：2010-09-23
申请人： Wei Wu , Jianhua Yang , Zhiyong Li , Shih-Yuan Wang , Dmitri Strukov , Alexandre Bratkovski
发明人： Wei Wu , Jianhua Yang , Zhiyong Li , Shih-Yuan Wang , Dmitri Strukov , Alexandre Bratkovski
CPC分类号： H01L27/10 , B82Y10/00 , G11C13/0016 , G11C13/0069 , G11C2013/0095 , H01L27/0688 , H01L27/105 , H01L27/115 , H01L27/11551 , H01L27/2472 , H01L27/2481 , H01L29/86 , H01L45/04 , H01L45/1233 , H01L45/14 , H01L45/146
摘要： A memory element is provided that includes a first electrode, a second electrode, and an active region disposed between the first electrode and the second electrode, wherein at least a portion of the active region comprises an elastically deformable material, and wherein deformation of the elastically deformable material causes said memory element to change from a lower conductive state to a higher conductive state. A multilayer structure also is provided that includes a base and a multilayer circuit disposed above the base, where the multilayer circuit includes at least of the memory elements including the elastically deformable material.
摘要翻译： 提供了一种存储元件，其包括第一电极，第二电极和设置在第一电极和第二电极之间的有源区，其中有源区的至少一部分包括可弹性变形的材料，并且其中弹性变形 可变形材料使得所述存储元件从较低的导电状态变为较高的导电状态。 还提供了一种多层结构，其包括设置在基底之上的基底和多层电路，其中多层电路至少包括包括可弹性变形的材料的存储元件。
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公开(公告)号：US20120002267A1
公开(公告)日：2012-01-05
申请号：US13256256
申请日：2009-06-30
申请人： Jianhua Yang , R. Stanley William , William Tong
发明人： Jianhua Yang , R. Stanley William , William Tong
IPC分类号： G02B26/00
CPC分类号： F03G7/005
摘要： An addressable nano-scale mechanical actuator is formed at the intersection of two nanowires. The actuator has an active region disposed between the two nanowires, which form the electrodes of the actuator. The active region contains an electrolytically decomposable material. When an activation voltage is applied to the electrodes, the material releases a gas that forms a bubble at one electrode, causing a bulging of a top surface of the actuator. The bulging may be used, via mechanical coupling, to provide mechanical actuation on a nanometer scale. The nanowires may be arranged in a two-dimensional array to provide an array of individually addressable actuators.
摘要翻译： 在两个纳米线的交叉处形成可寻址的纳米级机械致动器。 致动器具有设置在两个纳米线之间的有源区域，其形成致动器的电极。 活性区域含有电解质的材料。 当激活电压施加到电极时，材料释放在一个电极处形成气泡的气体，导致致动器的顶表面膨胀。 可以通过机械耦合使用凸起来提供纳米尺度的机械致动。 纳米线可以被布置成二维阵列以提供单独可寻址致动器的阵列。
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公开(公告)号：US20110240952A1
公开(公告)日：2011-10-06
申请号：US12753715
申请日：2010-04-02
CPC分类号： H01L27/101 , H01L27/1021 , H01L27/2418 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： A programmable crosspoint device with an integral diode includes a first crossbar, a second crossbar, a metallic interlayer, and a switching oxide layer interposed between the first crossbar and the metallic interlayer. The switching oxide layer has a low resistance state and high resistance state. The programmable crosspoint device also includes an integral diode which is interposed between the second crossbar layer and the metallic interlayer, the integral diode being configured to limit the flow of leakage current through the programmable crosspoint device in one direction. A method for forming a programmable crosspoint device with an integrated diode is also provided.
摘要翻译： 具有整体二极管的可编程交叉点装置包括插入第一横杆和金属中间层之间的第一横杆，第二横杆，金属中间层和开关氧化物层。 开关氧化物层具有低电阻状态和高电阻状态。 可编程交叉点装置还包括插入在第二横梁层和金属中间层之间的整体二极管，整体二极管被配置为在一个方向上限制通过可编程交叉点装置的泄漏电流的流动。 还提供了一种用于形成具有集成二极管的可编程交叉点器件的方法。
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公开(公告)号：US20110227031A1
公开(公告)日：2011-09-22
申请号：US13130799
申请日：2009-01-06
CPC分类号： H01L29/0665 , B82Y10/00 , H01L27/2472 , H01L29/0673 , H01L29/068 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： Various embodiments of the present invention are direct to nanoscale, reconfigurable, two-terminal memristor devices. In one aspect, a device (400) includes an active region (402) for controlling the flow of charge carriers between a first electrode (104) and a second electrode (106). The active region is disposed between the first electrode and the second electrode and includes a storage material. Excess mobile oxygen ions formed within the active region are stored in the storage material by applying a first voltage.
摘要翻译： 本发明的各种实施例直接涉及纳米尺度，可重新配置的两端忆阻器件。 一方面，装置（400）包括用于控制第一电极（104）和第二电极（106）之间的电荷载流子的有源区（402）。 有源区域设置在第一电极和第二电极之间，并且包括存储材料。 通过施加第一电压，在活性区域内形成的多余的移动氧离子被储存在存储材料中。
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公开(公告)号：US20110024716A1
公开(公告)日：2011-02-03
申请号：US12510589
申请日：2009-07-28
CPC分类号： H01L45/04 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/146 , Y10S977/773
摘要： A memristor includes a first electrode having a first surface, at least one electrically conductive nanostructure provided on the first surface, in which the at least one electrically conductive nanostructure is relatively smaller than a width of the first electrode, a switching material positioned upon said first surface, in which the switching material covers the at least one electrically conductive nanostructure, and a second electrode positioned upon the switching material substantially in line with the at least one electrically conductive nanostructure, in which an active region in the switching material is formed substantially between the at least one electrically conductive nanostructure and the first electrode.
摘要翻译： 忆阻器包括具有第一表面的第一电极，设置在第一表面上的至少一个导电纳米结构，其中至少一个导电纳米结构相对小于第一电极的宽度，开关材料位于所述第一表面上 其中所述开关材料覆盖所述至少一个导电纳米结构，以及位于所述开关材料上的基本上与所述至少一个导电纳米结构一致的第二电极，其中所述开关材料中的有源区域基本上形成在所述至少一个导电纳米结构之间 所述至少一个导电纳米结构和所述第一电极。
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公开(公告)号：US20100155686A1
公开(公告)日：2010-06-24
申请号：US12342399
申请日：2008-12-23
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1233 , H01L45/1266 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147
摘要： A memristive device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least one of the first and second electrodes is a metal oxide electrode.
摘要翻译： 忆阻装置包括第一电极，第二电极和设置在第一和第二电极之间的有源区。 第一和第二电极中的至少一个是金属氧化物电极。
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59.发明申请公开(公告)号：US20060021213A1
公开(公告)日：2006-02-02
申请号：US10902281
申请日：2004-07-29
申请人： Y. Chang , Jianhua Yang , Peter Ladwig
发明人： Y. Chang , Jianhua Yang , Peter Ladwig
IPC分类号： H01L29/04 , H01L31/112
CPC分类号： H01L43/12 , H01L27/224 , Y10T29/49002 , Y10T29/49021
摘要： Magnetic tunnel junctions and method for making the magnetic tunnel junctions are provided. The magnetic tunnel junctions are characterized by a tunnel barrier oxide layer sandwiched between two ferromagnetic layers. The methods used to fabricate the magnetic tunnel junctions are capable of completely and selectively oxidizing a tunnel junction precursor material using an oxidizing gas containing a mixture of gases to provide a tunnel junction oxide without oxidizing the adjacent ferromagnetic materials. In some embodiments the gas mixture is a mixture of CO and CO2 or a mixture of H2 and H2O.
摘要翻译： 提供磁隧道结以及制造磁隧道结的方法。 磁隧道结的特征在于夹在两个铁磁层之间的隧道势垒氧化层。 用于制造磁隧道结的方法能够使用包含气体混合物的氧化气体完全和选择性地氧化隧道结前体材料，以提供隧道结氧化物而不氧化相邻的铁磁材料。 在一些实施方案中，气体混合物是CO和CO 2的混合物或H 2 H 2和H 2 O 2的混合物。
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公开(公告)号：US06913607B2
公开(公告)日：2005-07-05
申请号：US09847947
申请日：2001-05-02
申请人： Stephen Ainsworth , Jianhua Yang
发明人： Stephen Ainsworth , Jianhua Yang
IPC分类号： A61B17/04 , A61B17/064 , A61B17/11 , A61B17/122 , A61B17/128 , A61B17/08
CPC分类号： A61B17/064 , A61B17/0469 , A61B17/11 , A61B17/1227 , A61B17/1285 , A61B2017/1107 , A61B2017/1135
摘要： A self-closing fastener is described that comprises a clip passable through a tissue opening. The fastener is adapted for holding by a mechanism in an open configuration for passing through the tissue, followed by releasing the fastener from the holding mechanism, allowing the clip to remain in the tissue in a shape that can clip two or more locations on the tissue. The fastener and delivery devices are particularly useful for tissue approximation, such as anastomosis. When used for anastomosis, the inventive clips provide intima-to-intima contact with a minimal amount of intraluminal exposure.
摘要翻译： 描述了一种自闭合紧固件，其包括可穿过组织开口的夹子。 紧固件适于通过机构保持通过组织的开放构型，随后从固定机构释放紧固件，允许夹子保持在组织中，形状可夹住组织上的两个或多个位置 。 紧固件和递送装置对组织近似特别有用，例如吻合。 当用于吻合术时，本发明的夹子提供内膜到内膜的接触，并以最小量的管腔内暴露。
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