Reflectance spectrophotometric apparatus with toroidal mirrors
    51.
    发明授权
    Reflectance spectrophotometric apparatus with toroidal mirrors 失效
    具有环形镜的反射分光光度计

    公开(公告)号:US5991022A

    公开(公告)日:1999-11-23

    申请号:US79875

    申请日:1998-05-15

    Abstract: An apparatus uses reflectance spectrophotometry to characterize a sample having any number of thin films. The apparatus uses two toroidal mirrors in an optical relay to direct light reflected by the sample to a spectrophotometer. A computer then analyzes the reflected spectrum to characterize the optical properties of the sample. The optical relay allows a range of angles of reflection from the sample, and has no chromatic aberration. The optical relay is also arranged so that the non-chromatic aberration is minimized. The sample is mounted on a movable stage so that different areas of the sample may be characterized. Furthermore, a deflector and a viewer are used to allow the operator of the apparatus to view the region of the sample under study.

    Abstract translation: 一种装置使用反射分光光度法来表征具有任何数量薄膜的样品。 该装置在光学继电器中使用两个环形反射镜将由样品反射的光引导到分光光度计。 然后计算机分析反射光谱以表征样品的光学性质。 光学继电器允许来自样品的一定范围的反射角度,并且没有色差。 光学继电器也被布置成使得非色差最小化。 将样品安装在可移动的载物台上,以便可以对样品的不同区域进行表征。 此外,偏转器和观察器用于允许装置的操作者观察正在研究的样品的区域。

    Semiconductor surface measurement system and method
    52.
    发明授权
    Semiconductor surface measurement system and method 失效
    半导体表面测量系统及方法

    公开(公告)号:US5956148A

    公开(公告)日:1999-09-21

    申请号:US989904

    申请日:1997-12-12

    Inventor: Francis G. Celii

    CPC classification number: G01B11/0641

    Abstract: A semiconductor surface measurement system (100) is disclosed. In this system, a plurality of wafers (106), each having an exposed surface, are held by a wafer positioning system (104), which sequentially moves the wafers into a measurement zone. A wafer position detection system (124) detects the position of a selected wafer, and generates an output signal indicating the position of the selected wafer. A surface measurement apparatus (114 through 121, 130 through 142) measures a property of the exposed surface of the selected wafer (106) in response to the output signal of the wafer position detection system (124) when the selected wafer is in the measurement zone. The disclosed surface measurement system (100)may be used to gather real-time data concerning surface properties such as composition, roughness and epilayer thickness during multi-wafer semiconductor processing.

    Abstract translation: 公开了半导体表面测量系统(100)。 在该系统中,每个具有暴露表面的多个晶片(106)由晶片定位系统(104)保持,晶片定位系统(104)将晶片顺序地移动到测量区域中。 晶片位置检测系统(124)检测所选晶片的位置,并产生指示所选晶片的位置的输出信号。 当所选晶片处于测量状态时,表面测量装置(114至121,130至142)响应于晶片位置检测系统(124)的输出信号测量所选晶片(106)的暴露表面的性质 区。 公开的表面测量系统(100)可以用于收集关于多晶片半导体处理期间的表面特性(例如组成,粗糙度和外延层厚度)的实时数据。

    Thin film optical measurement system and method with calibrating
ellipsometer

    公开(公告)号:US5798837A

    公开(公告)日:1998-08-25

    申请号:US890697

    申请日:1997-07-11

    CPC classification number: G01B11/0641 G01J4/00 G01N21/211

    Abstract: An optical measurement system for evaluating a reference sample that has at least a partially known composition. The optical measurement system includes a reference ellipsometer and at least one non-contact optical measurement device. The reference ellipsometer includes a light generator, an analyzer and a detector. The light generator generates a beam of quasi-monochromatic light having a known wavelength and a known polarization for interacting with the reference sample. The beam is directed at a non-normal angle of incidence relative to the reference sample to interact with the reference sample. The analyzer creates interference between the S and P polarized components in the light beam after the light beam has interacted with reference sample. The detector measures the intensity of the light beam after it has passed through the analyzer. A processor determines the polarization state of the light beam entering the analyzer from the intensity measured by the detector, and determines an optical property of the reference sample based upon the determined polarization state, the known wavelength of light from the light generator and the composition of the reference sample. The processor also operates the optical measurement device to measure an optical parameter of the reference sample. The processor calibrates the optical measurement device by comparing the measured optical parameter from the optical measurement device to the determined optical property from the reference ellipsometer.

    APPARATUS TO CHARACTERIZE SUBSTRATES AND FILMS

    公开(公告)号:US20240027186A1

    公开(公告)日:2024-01-25

    申请号:US17871384

    申请日:2022-07-22

    CPC classification number: G01B11/0641 G01N21/21 G01B2210/56

    Abstract: Various examples include an apparatus to characterize substrate and film thicknesses of the substrate and films formed thereon. The apparatus uses one or more wavelengths of light from a light source (e.g., a swept laser) to interrogate the substrate. The light is directed substantially orthogonally to an upper surface of the substrate. A polarizer and an analyzer element are coupled between the light source and the substrate. Therefore, the polarizer and the analyzer are both located in the beam propagation path from the light source to the substrate. An optical detector is arranged substantially orthogonally to the upper surface of the substrate. The optical detector receives light returned back from the substrate. The apparatus is capable of determining the thickness of the substrate and one or more films contained thereon, regardless of substrates having optical anisotropies, such as chiral characteristics or stress-induced films. Other apparatuses and methods are also disclosed.

    SUBSTRATE PROCESSING APPARATUS AND METHOD OF MEASURING FILM THICKNESS

    公开(公告)号:US20230160688A1

    公开(公告)日:2023-05-25

    申请号:US17955660

    申请日:2022-09-29

    CPC classification number: G01B11/0625 G01B11/0641

    Abstract: A substrate processing apparatus includes a chamber including an accommodation space, a stage disposed in the accommodation space and provided with a substrate disposed thereon, a deposition part disposed under the stage and spraying at least one deposition material to the substrate, and a measurement part disposed adjacent to the deposition part. The measurement part includes an accommodation portion provided with an opening defined through at least one surface thereof, a light source disposed in the accommodation portion and irradiating a first light, at least one transmission portion disposed in the opening, facing the light source, and receiving the first light, and a reception portion facing the at least one transmission portion and receiving the first light reflected from the at least one deposition material as a second light.

    Method And System For Real-Time In-Process Measurement Of Coating Thickness

    公开(公告)号:US20180045507A1

    公开(公告)日:2018-02-15

    申请号:US15790181

    申请日:2017-10-23

    CPC classification number: G01B11/065 G01B11/0633 G01B11/0641

    Abstract: The present disclosure is generally directed to methods and systems for measuring the thickness of coatings or thin films on various substrates. For example, one disclosed method includes the steps of providing and directing light waves of varying wavelengths toward a moving substrate comprising a coating, linearly polarizing the light waves, converting the linearly polarized light waves to circularly polarized light waves, analyzing elliptically polarized light waves reflected by the moving substrate, capturing analyzed light waves, generating light wave data based on the captured light waves, and determining a thickness of the coating based on the light wave data.

    Apparatus and method for optical metrology with optimized system parameters

    公开(公告)号:US09879977B2

    公开(公告)日:2018-01-30

    申请号:US14073538

    申请日:2013-11-06

    CPC classification number: G01B11/02 G01B11/0641 G01B11/065

    Abstract: Methods and systems for achieving a small measurement box size specification across a set of metrology system parameters are presented. The small measurement box size specification is achieved by selectively constraining one or more of the sets of system parameters during measurement. A subset of measurement system parameters such as illumination wavelength, polarization state, polar angle of incidence, and azimuth angle of incidence is selected for measurement to maintain a smaller measurement box size than would otherwise be achievable if the full, available range of measurement system parameters were utilized in the measurement. In this manner, control of one or more factors that affect measurement box size is realized by constraining the measurement system parameter space. In addition, a subset of measurement signals may be selected to maintain a smaller measurement box size than would otherwise be achievable if all available measurement signals were utilized in the measurement.

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