Semiconductor devices
    51.
    发明授权

    公开(公告)号:US11996414B2

    公开(公告)日:2024-05-28

    申请号:US17123782

    申请日:2020-12-16

    摘要: A device comprising a stack of layers defining one or more electronic elements, wherein the stack comprises at least: one or more semiconductor channels; a dielectric; a first conductor pattern defining one or more coupling conductors, wherein the one or more coupling conductors are capacitively coupled to the one or one or more semiconductor channels via the dielectric; a planarisation layer; a second conductor pattern defining one or more routing conductors, wherein the second conductor pattern is in contact with the first conductor pattern via through holes in at least the planarisation layer, and wherein the semiconductor channel regions are at least partly outside the through hole regions.

    DISPLAY PANEL AND MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS

    公开(公告)号:US20240114750A1

    公开(公告)日:2024-04-04

    申请号:US17769179

    申请日:2021-04-28

    发明人: Yuanjie XU Wei ZHANG

    IPC分类号: H10K59/80

    CPC分类号: H10K59/80518 H10K71/621

    摘要: A display panel and a manufacturing method thereof, and a display apparatus are disclosed. The display panel has a display region, the display region including: a first display region and a second display region; light transmittance of the first display region is greater than light transmittance of the second display region; and the display panel includes: a substrate having a plurality of first sub-pixels located in the first display region; the plurality of first sub-pixels include a plurality of first anodes, and each of the first anodes includes: a first transparent conductive layer on the substrate, a first reflective layer on a side of the first transparent conductive layer away from the substrate, and a second transparent conductive layer on a side of the first reflective layer away from the substrate; the plurality of first anodes include at least one first-type first anode.

    MANUFACTURING METHOD OF DISPLAY DEVICE
    57.
    发明公开

    公开(公告)号:US20230255097A1

    公开(公告)日:2023-08-10

    申请号:US18165978

    申请日:2023-02-08

    IPC分类号: H10K71/60 H10K71/00 H10K71/20

    摘要: According to one embodiment, a manufacturing method of a display device includes providing a processing substrate in which a lower electrode is formed on a stage inside a chamber, forming a first insulating layer overlapping the lower electrode in a state where a first distance is formed between the stage and a counter-electrode, and subsequently forming a second insulating layer on the first insulating layer in a state where a second distance greater than the first distance is formed between the stage and the counter-electrode, forming a rib by patterning the first insulating layer and the second insulating layer, forming a partition, forming an organic layer, forming an upper electrode, forming a cap layer, and forming a sealing layer.