Abstract:
A scanning transmission electron microscope (STEM) offering substantially the same ease of operation as that of a scanning electron microscope (SEM) and providing substantially the same degree of resolution as that of a transmission electron microscope (TEM). The STEM of the invention is constituted based on the constitution of the SEM. The STEM comprises: an electron source for generating a primary electron beam; an electron illuminating lens system for converging the primary electron beam from the electron source onto a specimen for illumination; an electron deflecting system for scanning the specimen with the primary electron beam emitted thereto; a scattered electron detector for detecting scattered electrons transmitted through the specimen; a projection lens system for projecting the scattered electrons onto a detection surface of the scattered electron detector; an image displaying device for displaying a scanning transmission electron microscope image of the specimen using a detection signal from the scattered electron detector; and a detection angle changing device for variably establishing a range of scattering angle of the scattered electrons detected by the scattered electron detector. This structure enhances a contrast of a desired portion of the specimen under observation for a scanning transmitted image by selective establishment of detection angle ranges for the scattered electron detector.
Abstract:
In order that the deflection scanning position can be corrected at a time point within a period for fetching information from a subject to be inspected and improvements in accuracy of chip comparison inspection and an inspection near the wafer outer periphery where distortion is large can be assured by correcting the inspection position and biased distortion at a high speed with high accuracy, a digital deflection control scheme is employed in which the deflection scanning signal and correction are all calculated digitally in a deflection controller for deflecting and controlling a charged particle beam irradiated onto a subject to be inspected and the digital value is sequentially converted into an analog value by a time-series train of digital control signal to form a deflection scanning waveform.
Abstract:
A particle beam apparatus with a source for generating a primary particle beam, means for focussing the primary particle beam onto a specimen, a detection system for detecting particles released at the specimen, first means to accelerate the primary particle beam to a first energy, first means to decelerate the primary particle beam before the detection system from the first energy to a second lower energy, second means to accelerate the primary particle beam after the detection system from the second energy to a third higher energy and second means to decelerate the primary particle beam from the third energy to a final beam energy. The detection system further comprises a converter to convert particles released at the specimen into converted secondary particles which will be detected by the detector.
Abstract:
An operator-free and fully automated semiconductor inspection system with high throughput is realized. All conditions required for capturing and inspection are generated from design information such as CAD data. In order to perform actual inspection under the conditions, a semiconductor inspection system is composed of a navigation system for generating all the conditions required for capturing and inspection from the design information and a scanning electron microscope system for actually performing capturing and inspection. Moreover, in the case of performing a matching process between designed data and a SEM image, deformed parts are corrected by use of edge information in accordance with multiple directions and smoothing thereof. Furthermore, a SEM image corresponding to a detected position is re-registered as a template, and the matching process is thereby performed.
Abstract:
To correct delay time of an electronic circuit of a scanning type charged particle beam microscope, in a scanning type charged particle beam microscope using electron beam, when a scanned image is sampled to a storing apparatus in synchronism with a scanning signal, the scanned image is sampled after correcting delay of an electronic circuit by a shift register having a variable stage number.
Abstract:
A specimen inspection instrument has a specimen-moving mechanism mounted within a specimen chamber. An electrical current, induced across the specimen by the mechanism, is detected with a detector. The specimen is examined based on the obtained detector output signal. An amplifier for amplifying the detector output signal is placed outside the specimen chamber. A first lead wire passes the detector output signal to the outside amplifier through the wall of the specimen chamber. A second lead wire connects a conductive partition member with a conducting member and with a reference input terminal of the amplifier that determines a reference potential for the output from the amplifier.
Abstract:
In a circuit pattern inspection apparatus, while an electron beam is irradiated onto a surface of a substrate having a plurality of chips where circuit patterns have been formed, a signal produced from the irradiated substrate is detected so as to form an image, and then, the formed image is compared with another image in order to detect a defect on the circuit patterns. Before the electron beam is irradiated onto either the chip or the plurality of chips so as to acquire the image for an inspection purpose, an electron beam is previously irradiated onto the region to be irradiated, so that charging conditions of the substrate to be inspected are arbitrarily controlled.
Abstract:
Electron microscopes (e.g., scanning electron microscopes, mapping SEMs) are disclosed in which the amount of charging of the specimen is controlled to between a minimum amount needed to view an image and a maximum amount beyond which a viewable image cannot be obtained, and such that the image has low distortion and the specimen is not damaged. Multiple irradiation-electron beams, or multiple segments of a single irradiation-electron beam, are directed to a specimen surface. The irradiation beams (or segments) are decelerated by a retarding voltage applied by a cathode lens and are incident on the specimen surface. The respective current and incident energy of each irradiation beam (or segment thereof) are controlled independently to a predetermined relationship so as to impart predetermined amounts of charging to different insulator regions of the specimen.
Abstract:
In a substrate testing device, a testing unit acquires a tested result of a substrate by scanning of an electron beam. An alignment mark detecting unit optically detects an alignment mark on the substrate. A substrate position calculating unit calculates a substrate position within the substrate testing device from a position of the alignment mark. A position aligning unit aligns a position of the tested result with the calculated substrate position.
Abstract:
A structure of an electron beam apparatus having shielding properties for shielding against an environmental magnetic field is provided. The electron beam apparatus comprises a mirror barrel for housing a magnetic lens for converging an electron beam onto a specimen and a specimen chamber for housing the specimen, wherein a non-magnetic material having conductivity is used as a material for at least one of the mirror barrel and a main body of the specimen chamber. The material for the mirror barrel or the main body of the specimen chamber is an aluminum alloy and a thickness of a sidewall of the mirror barrel or the main body of the specimen chamber is 10 mm or more. A magnetic plate having a thickness smaller than that of the sidewall of the mirror barrel or the main body of the specimen chamber is provided on an inner sidewall of the mirror barrel or the main body of the specimen chamber.