公开(公告)号：US09163997B2

公开(公告)日：2015-10-20

申请号：US13985498

申请日：2012-02-14

申请人： Simon Vassant ,  Fabrice Pardo ,  Jean-Luc Pelouard ,  Jean-Jacques Greffet ,  Alexandre Archambault ,  François Marquier

发明人： Simon Vassant ,  Fabrice Pardo ,  Jean-Luc Pelouard ,  Jean-Jacques Greffet ,  Alexandre Archambault ,  François Marquier

IPC分类号： G01J5/20 ,  H01L31/09 ,  H01L31/08 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/036

CPC分类号： G01J5/20 ,  H01L31/03046 ,  H01L31/035209 ,  H01L31/036 ,  H01L31/08 ,  H01L31/09 ,  Y02E10/544

摘要： According to a first aspect of the invention, the invention relates to a terahertz detection cell for detecting radiations having frequencies within a given spectral detection band, said cell comprising: a polar semi-conductor crystal structured such that it forms at least one slab of crystal, said crystal (330) having a Reststrahlen band covering said spectral detection band, and comprising at least one interface with a dielectric means; coupling means obtained by the slab structure (330), each slab forming an optical antenna, enabling the resonant coupling of an interface phonon polariton (IPhP) supported by said interface and an incident radiation having a frequency within the spectral detection band; and at least one first and one second connection terminal (301, 302) that are in electrical contact respectively with a first and a second end of the interface, said ends opposing each other, and said connection terminals to be connected to an electrical reading circuit for measuring the variation of the impedance of the crystal between the opposing ends of the interface.

摘要翻译： 根据本发明的第一方面，本发明涉及一种用于检测具有给定光谱检测带内的频率的辐射的太赫兹检测单元，所述单元包括：极化半导体晶体，其结构使得其形成至少一个晶体板 ，所述晶体（330）具有覆盖所述光谱检测带的Reststrahlen带，并且包括具有电介质装置的至少一个界面; 通过平板结构（330）获得的每个平板形成光学天线的耦合装置能够使由所述界面支撑的界面声子极化子（IPhP）和在频谱检测带内具有频率的入射辐射的谐振耦合; 以及至少一个第一和第二连接端子（301,302），其分别与所述接口的第一端和所述第二端电接触，所述端部彼此相对，并且所述连接端子将连接到电读取电路 用于测量界面的相对端之间的晶体的阻抗的变化。

公开(公告)号：US20150255660A1

公开(公告)日：2015-09-10

申请号：US14721272

申请日：2015-05-26

申请人： Alion Science and Technology Corporation

发明人： Joseph T. Siewick ,  Allen Frank

IPC分类号： H01L31/08 ,  G01V3/08

CPC分类号： H01L31/08 ,  G01V3/081

摘要： A system of having a circuit having an electrical coil configured to generate a magnetic field based on properties of a surrounding space and an object presented to the electrical coil and a sensor configured to sense inductance and resistance of the electrical coil and to discriminate the object presented to the electrical coil in accordance with the sensing. A precision variable resistor to control resistance of an in-loop photoresistor with an out-loop photoresistor that are located parallel to each other.

摘要翻译： 一种具有电气线圈的电路的系统，其被配置为基于周围空间的特性和呈现给电线圈的物体产生磁场;以及传感器，其被配置为感测电线圈的电感和电阻并且区分所呈现的物体 根据感应到电线圈。 一个精密可变电阻器，用于控制带有外环光敏电阻的并联光栅的电阻。

公开(公告)号：US09130104B2

公开(公告)日：2015-09-08

申请号：US13858722

申请日：2013-04-08

申请人： Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

发明人： Jun-Ku Liu ,  Guan-Hong Li ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L31/08 ,  H01L31/09 ,  H01L31/0224

CPC分类号： H01L31/09 ,  H01L31/0224 ,  H01L31/022466 ,  H01L51/444 ,  Y02E10/549

摘要： A photoresistor includes a first electrode layer, a photosensitive material layer, and a second electrode layer. The first electrode layer, photosensitive material layer and second electrode layer are stacked with each other. The first electrode layer is located on a first surface of the photosensitive material layer. The second electrode layer is located on a second surface of the photosensitive material layer. The first surface and second surface of the photosensitive material layer are opposite to each other. The first electrode layer includes a carbon nanotube film structure.

摘要翻译： 光敏电阻包括第一电极层，感光材料层和第二电极层。 第一电极层，感光材料层和第二电极层彼此堆叠。 第一电极层位于感光材料层的第一表面上。 第二电极层位于感光材料层的第二表面上。 感光材料层的第一表面和第二表面彼此相对。 第一电极层包括碳纳米管薄膜结构。

公开(公告)号：US09130082B2

公开(公告)日：2015-09-08

申请号：US14063361

申请日：2013-10-25

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Kyung Hyun Park ,  Sang-Pil Han ,  Jeong Woo Park ,  Han-Cheol Ryu ,  Kiwon Moon ,  Namje Kim ,  Hyunsung Ko

IPC分类号： H01Q13/08 ,  H01L31/028 ,  H01L31/08

CPC分类号： H01L31/028 ,  H01L31/085

摘要： Provided is a terahertz wave generating/detecting apparatus and a method for manufacturing the same. The terahertz wave generating/detecting apparatus includes; a substrate having an active region and a transmitting region; a lower metal layer extending in a first direction on the active region and the transmitting region of the substrate; a graphene layer disposed on the lower metal layer on the active region; and upper metal layers extending in the first direction on the graphene layer of the active region and the substrate in the transmission region, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by beated laser light applied to the graphene layer and the metal layer.

摘要翻译： 提供一种太赫兹波发生/检测装置及其制造方法。 太赫兹波发生/检测装置包括： 具有有源区和发射区的衬底; 在所述有源区域和所述基板的透射区域上沿第一方向延伸的下金属层; 设置在有源区上的下金属层上的石墨烯层; 以及在有源区域的石墨烯层和透射区域中的衬底在第一方向上延伸的上金属层，其中通过在石墨烯层和石墨烯层之间的边界表面上诱导的表面等离子体激元产生或放大太赫兹波 通过施加到石墨烯层和金属层上的激光的下部金属层。

公开(公告)号：US09123837B2

公开(公告)日：2015-09-01

申请号：US13906655

申请日：2013-05-31

申请人： Oxford Instruments Analytical Oy

发明人： Hans Andersson ,  Pasi Kostamo ,  Veikko Kämäräinen ,  Seppo Nenonen

IPC分类号： H01L31/0216 ,  H01L31/08 ,  H01L23/552 ,  G01T1/24 ,  H01L31/115 ,  H01L31/0224

CPC分类号： H01L31/0216 ,  G01T1/241 ,  H01L23/552 ,  H01L31/02164 ,  H01L31/022416 ,  H01L31/085 ,  H01L31/115 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor radiation detector includes a bulk layer of semiconductor material. On a first side of said bulk layer is an arrangement of field electrodes and a collection electrode for collecting radiation-induced signal charges from said bulk layer. A radiation shield exists on a second side of said bulk layer, opposite to said first side, which radiation shield selectively overlaps the location of said collection electrode.

摘要翻译： 半导体辐射检测器包括半导体材料的体层。 在所述体层的第一侧上是场电极和收集电极的布置，用于收集来自所述体层的辐射信号电荷。 辐射屏蔽存在于所述主体层的与所述第一侧相对的第二侧上，该辐射屏蔽选择性地与所述收集电极的位置重叠。

公开(公告)号：US09006010B2

公开(公告)日：2015-04-14

申请号：US13302835

申请日：2011-11-22

申请人： Arie Shahar ,  Eliezer Traub ,  Diego Sclar ,  Peter Rusian

发明人： Arie Shahar ,  Eliezer Traub ,  Diego Sclar ,  Peter Rusian

IPC分类号： H01L21/00 ,  H01L31/08 ,  H01L31/115 ,  H01L31/18

CPC分类号： H01L31/085 ,  H01L31/115 ,  H01L31/18 ,  Y10S438/959

摘要： Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps, wherein a last polishing step of the polishing sequence includes polishing with a slurry having a grain size smaller than about 0.1 μm to create a polished first surface. The method also includes applying (i) an encapsulation layer on a top of the polished first surface to seal the polished first surface and (ii) a photoresist layer on top of the encapsulation layer on the polished first surface. The method further includes creating undercuts of the encapsulation layer under the photoresist layer. The method additionally includes partially etching the polished first surface of the semiconductor via the openings in the photoresist layer and in the encapsulation layer to partially etch the semiconductor creating etched regions.

摘要翻译： 提供辐射探测器和制造辐射探测器的方法。 一种方法包括使用包括多个抛光步骤的抛光顺序对半导体晶片的至少第一表面进行机械抛光，其中抛光顺序的最后抛光步骤包括用粒径小于约0.1μm的浆料抛光以产生 抛光的第一个表面。 该方法还包括在抛光的第一表面的顶部上应用（i）封装层以密封抛光的第一表面和（ii）在抛光的第一表面上的封装层的顶部上的光致抗蚀剂层。 该方法还包括在光致抗蚀剂层下面形成封装层的底切。 该方法另外包括通过光致抗蚀剂层和封装层中的开口部分地蚀刻半导体的经抛光的第一表面，以部分蚀刻形成蚀刻区域的半导体。

公开(公告)号：US08963064B2

公开(公告)日：2015-02-24

申请号：US13239754

申请日：2011-09-22

申请人： Takeshi Yonekura ,  Toshio Miyazawa ,  Atsushi Hasegawa ,  Terunori Saitou ,  Kozo Yasuda

发明人： Takeshi Yonekura ,  Toshio Miyazawa ,  Atsushi Hasegawa ,  Terunori Saitou ,  Kozo Yasuda

IPC分类号： H01L27/00 ,  H01L27/146 ,  H01L31/08 ,  H01L31/103

CPC分类号： H01L27/14649 ,  H01L27/1461 ,  H01L31/08 ,  H01L31/103

摘要： A photosensor array includes plural photosensor pixels. Each of the photosensor pixels includes a lower electrode, an amorphous silicon film, an n-type amorphous silicon film, and an upper electrode. The photosensor array includes plural scanning lines connected to the upper electrodes, plural read lines connected to the lower electrodes, a scanning circuit that is connected to the plural scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines, a first unit that inputs a second voltage higher than the first voltage to the plural read lines in a blanking period of one horizontal scanning period, and thereafter puts the plural read lines into the floating state, and a second unit that outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel.

摘要翻译： 光传感器阵列包括多个光电传感器像素。 每个光传感器像素包括下电极，非晶硅膜，n型非晶硅膜和上电极。 光传感器阵列包括连接到上电极的多个扫描线，连接到下电极的多个读取线，连接到多个扫描线的扫描电路，并且将扫描线顺序地提供给各扫描线的第一电压的选择扫描信号 第一单元，在一个水平扫描周期的消隐期间，将多个读取行的第二电压输入到多个读取行，之后将多条读取线置于浮置状态，第二单元输出电压变化 在一个水平扫描周期内的每个读取行中，作为光电传感器像素的传感器输出电压。

公开(公告)号：US20140355745A1

公开(公告)日：2014-12-04

申请号：US14373436

申请日：2013-01-25

申请人： Hitachi, Ltd.

发明人： Shinya Kominami

IPC分类号： G01T1/24 ,  A61B6/00 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/08

CPC分类号： G01T1/244 ,  A61B6/4258 ,  A61B6/4266 ,  G01T1/24 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/085

摘要： Provided are a thallium bromide semiconductor radiation detector having stable measurement performance with little noise increase even during prolonged measurement, and a nuclear medicine diagnosis device employing the same. In a semiconductor radiation detector using thallium bromide as a semiconductor crystal sandwiched between cathode and anode electrodes, a remaining surface, among surfaces of the semiconductor crystal, which is other than a surface covered with the cathode or anode electrode, is covered with a passivation layer including any one of two materials, that is, fluoride of thallium and chloride of thallium, or a mixture of any one of the two materials and bromide of thallium.

摘要翻译： 提供一种具有稳定的测量性能的铊溴化物半导体辐射检测器，即使在长时间的测量期间也几乎没有噪声增加，以及使用其的核医学诊断装置。 在使用溴化铊作为夹在阴极和阳极电极之间的半导体晶体的半导体辐射检测器中，除了被阴极或阳极电极覆盖的表面之外的半导体晶体的表面之中的剩余表面被钝化层 包括两种材料中的任何一种，即铊的氟化物和铊的氯化物，或两种材料中的任何一种和铊的溴化物的混合物。

公开(公告)号：US20140312442A1

公开(公告)日：2014-10-23

申请号：US14167075

申请日：2014-01-29

申请人： Takehisa SASAKI

发明人： Takehisa SASAKI

IPC分类号： H01L31/08

CPC分类号： H01L31/085 ,  G01T1/2018 ,  G01T1/249 ,  H01L31/1085 ,  H01L31/115

摘要： There has been such a problem that radiation detecting elements using semiconductor elements have a low radiation detection efficiency, since the radiation detecting elements easily transmit radiation, even though the radiation detecting elements have merits, such as small dimensions and light weight. Disclosed are a radiation detecting element and a radiation detecting device, wherein a film formed of a metal, such as tungsten, is formed on the radiation incident surface of the radiation detecting element, and the incident energy of the radiation is attenuated. The efficiency of generating carriers by way of radiation incidence is improved by attenuating the incident energy, the thickness of the metal film is optimized, and the radiation detection efficiency is improved.

摘要翻译： 存在使用半导体元件的放射线检测元件具有低辐射检测效率的问题，因为即使辐射检测元件具有尺寸小，重量轻等优点，因为辐射检测元件容易发射辐射。 公开了一种放射线检测元件和放射线检测装置，其中由诸如钨的金属形成的膜形成在辐射检测元件的辐射入射表面上，并且辐射的入射能量被衰减。 通过衰减入射能量，通过辐射入射发生载流子的效率得到改善，金属膜的厚度被优化，辐射检测效率得到提高。

公开(公告)号：US08829460B2

公开(公告)日：2014-09-09

申请号：US13552307

申请日：2012-07-18

申请人： Rebecca J. Nikolic ,  Adam M. Conway ,  Robert T. Graff ,  Joshua D. Kuntz ,  Catherine Reinhardt ,  Lars F. Voss ,  Chin Li Cheung ,  Daniel Heineck

发明人： Rebecca J. Nikolic ,  Adam M. Conway ,  Robert T. Graff ,  Joshua D. Kuntz ,  Catherine Reinhardt ,  Lars F. Voss ,  Chin Li Cheung ,  Daniel Heineck

IPC分类号： G01T3/00 ,  H01L31/08 ,  H01L31/18 ,  G01T3/08

CPC分类号： H01L31/085 ,  G01T3/08 ,  H01L31/115 ,  H01L31/18

摘要： Three-dimensional boron particle loaded thermal neutron detectors utilize neutron sensitive conversion materials in the form of nano-powders and micro-sized particles, as opposed to thin films, suspensions, paraffin, etc. More specifically, methods to infiltrate, intersperse and embed the neutron nano-powders to form two-dimensional and/or three-dimensional charge sensitive platforms are specified. The use of nano-powders enables conformal contact with the entire charge-collecting structure regardless of its shape or configuration.

摘要翻译： 三维硼粒子热中子检测器利用与纳米粉末和微尺寸颗粒形式相比的中子敏感转换材料，与薄膜，悬浮液，石蜡等相反。更具体地说，渗透，散布和嵌入的方法 规定了形成二维和/或三维电荷敏感平台的中子纳米粉末。 使用纳米粉末能够与整个电荷收集结构保形接触，而不管其形状或构型如何。