Electronic device powering
    631.
    发明授权

    公开(公告)号:US11914450B2

    公开(公告)日:2024-02-27

    申请号:US17838157

    申请日:2022-06-10

    CPC classification number: G06F1/3296 G06F1/3203

    Abstract: In an embodiment, an electronic device includes a first near field communication module, at least one second communication module, at least one portion of a volatile memory, at least one register, and at least one first circuit configured to activate the near field communication module, wherein the at least one second communication module is configured to power the at least one portion of the volatile memory, the at least one register and the at least one first circuit with a first supply voltage when the electronic device is in an on state and when the first near field communication module is in a standby mode.

    Power supply circuit, corresponding device and method

    公开(公告)号:US11906994B2

    公开(公告)日:2024-02-20

    申请号:US17836524

    申请日:2022-06-09

    CPC classification number: G05F1/468 G06F1/3296

    Abstract: A voltage regulator is embedded in a circuit intermediate a first node (coupled to a battery) and a second node (supplying power to an external memory). The voltage regulator is activatable in a first mode of operation for startup during which an voltage is applied to the second node that increases towards a supply threshold. In response to the voltage at the second node reaching the supply threshold, the voltage regulator transitions to a second mode of operation where a programmable regulated voltage (higher than the supply threshold) is applied to the second node. In response to receipt of a low-power operation request, a first high-drive regulator circuitry is deactivated and a second low-power regulator circuitry is activated to provide a third mode of operation at low power.

    READ ONLY MEMORY
    634.
    发明公开
    READ ONLY MEMORY 审中-公开

    公开(公告)号:US20240040781A1

    公开(公告)日:2024-02-01

    申请号:US18484906

    申请日:2023-10-11

    CPC classification number: H10B20/367 H01L23/57

    Abstract: The present description concerns a ROM including at least one first rewritable memory cell. In an embodiment, a method of manufacturing a read-only memory (ROM) comprising a plurality of memory cells is proposed. Each of the plurality of memory cells includes a rewritable first transistor and a rewritable second transistor. An insulated gate of the rewritable first transistor is connected to an insulated gate of the rewritable second transistor. The method includes successively depositing, on a semiconductor structure, a first insulating layer and a first gate layer, wherein the first insulating layer is arranged between the semiconductor structure and the first gate layer, wherein the rewritable second transistor further includes a well-formed between an associated first insulating layer and the semiconductor structure, and wherein the rewritable first insulating layer is in direct contact with the semiconductor structure; and successively depositing a second insulating layer and a second gate layer.

    Priority management for a transponder

    公开(公告)号:US11863248B2

    公开(公告)日:2024-01-02

    申请号:US18159813

    申请日:2023-01-26

    CPC classification number: H04B5/0031 H04B5/0043 H04B5/0062 H04B5/0087

    Abstract: A device includes a first circuit that includes a near-field emission circuit, a second circuit, and a hardware connection linking the first circuit to the second circuit. The hardware connection is dedicated to a priority management between the first circuit and the second circuit. In addition, priority management information can be communicated between a near-field emission circuit and a second circuit. The communicating occurs between a dedicated hardware connection connecting the near-field emission circuit to the second circuit.

    Time domains synchronization in a system on chip

    公开(公告)号:US11856080B2

    公开(公告)日:2023-12-26

    申请号:US18059784

    申请日:2022-11-29

    CPC classification number: H04L7/0012

    Abstract: A method for synchronizing a first time domain with a second time domain of a system on chip includes a detection of at least one periodic trigger event generated in the first time domain, the second time domain or in a third time domain; acquisitions, made at the instants of the at least one trigger event, of the current timestamp values representative of the instantaneous states of the time domain(s) other than the trigger time domain; a comparison, made in the third time domain, between differential durations between current timestamp values which are respectively acquired successively; and a synchronization of the second time domain with the first time domain, on the basis of the comparison.

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