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    Dynamic care areas
    61.
    发明授权
    Dynamic care areas 有权
    动态护理领域

    公开(公告)号：US08781781B2

    公开(公告)日：2014-07-15

    申请号：US13174556

    申请日：2011-06-30

    Applicant: Ashok V. Kulkarni ,  Chien-Huei Adam Chen

    Inventor： Ashok V. Kulkarni ,  Chien-Huei Adam Chen

    IPC: G06F19/00 ,  G05B23/02

    CPC classification number: G05B23/0297 ,  G05B19/41875 ,  G05B2219/45031 ,  H01L22/12 ,  H01L22/20 ,  Y02P90/22

    Abstract: Various embodiments for determining dynamic care areas are provided. In one embodiment, a first inspection process is performed on a wafer after a first fabrication step has been performed on the wafer and before a second fabrication process has been performed on the wafer. One embodiment includes determining care areas for a second inspection process based on inspection results generated by the first inspection process. The second inspection process will be performed on the wafer after the second fabrication step has been performed on the wafer.

    Abstract translation: 提供了用于确定动态护理区域的各种实施例。 在一个实施例中，在对晶片执行第一制造步骤之后并且在晶片上执行第二制造工艺之前，在晶片上执行第一检查过程。 一个实施例包括基于由第一检查过程产生的检查结果确定用于第二检查过程的护理区域。 在晶片上执行第二制造步骤之后，将在晶片上进行第二次检查处理。

    Systems and methods for detecting defects on a wafer
    63.
    发明授权
    Systems and methods for detecting defects on a wafer 有权
    用于检测晶片缺陷的系统和方法

    公开(公告)号：US08223327B2

    公开(公告)日：2012-07-17

    申请号：US12359476

    申请日：2009-01-26

    Applicant: Lu Chen ,  Jason Kirkwood ,  Mohan Mahadevan ,  James A. Smith ,  Lisheng Gao ,  Junqing (Jenny) Huang ,  Tao Luo ,  Richard Wallingford

    Inventor： Lu Chen ,  Jason Kirkwood ,  Mohan Mahadevan ,  James A. Smith ,  Lisheng Gao ,  Junqing (Jenny) Huang ,  Tao Luo ,  Richard Wallingford

    IPC: G01N21/00

    CPC classification number: G01N21/9501 ,  G01N2021/887 ,  H01L22/12

    Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

    Abstract translation: 提供了用于检测晶片上的缺陷的系统和方法。 一种方法包括通过使用检查系统的第一和第二光学状态的检查系统扫描晶片来产生晶片的输出。 第一和第二光学状态由检查系统的至少一个光学参数的不同值来定义。 该方法还包括使用使用第二光学状态产生的输出使用第一光学状态产生的输出和晶片的第二图像数据为晶片产生第一图像数据。 此外，该方法包括将第一图像数据和对应于晶片上基本相同位置的第二图像数据组合，从而产生用于晶片的附加图像数据。 该方法还包括使用附加图像数据检测晶片上的缺陷。

    Combined modulated optical reflectance and electrical system for ultra-shallow junctions applications
    66.
    发明授权
    Combined modulated optical reflectance and electrical system for ultra-shallow junctions applications 有权
    用于超浅结合应用的组合调制光学反射和电气系统

    公开(公告)号：US07499168B2

    公开(公告)日：2009-03-03

    申请号：US11656610

    申请日：2007-01-23

    Applicant: Alex Salnik ,  Lena Nicolaides ,  Jon Opsal

    Inventor： Alex Salnik ,  Lena Nicolaides ,  Jon Opsal

    IPC: G01N21/00

    CPC classification number: G01N21/1717 ,  G01N21/55 ,  G01N2021/1719

    Abstract: A metrology tool for semiconductor wafers is disclosed which combines modulated reflectivity measurement with junction photovoltage measurements. The tool includes an intensity modulated pump beam for periodically exciting the sample. A separate probe beam is used to monitor changes in optical reflectivity of the sample. In addition, capacitive electrodes are provided to measure modulated changes in the voltage across the electrodes. These measurements are combined to evaluate the wafer. These measurement can be particularly useful in characterizing ultrashallow junctions.

    Abstract translation: 公开了一种用于半导体晶片的计量工具，其将调制反射率测量与结光电压测量相结合。 该工具包括用于周期性激发样品的强度调制泵浦光束。 单独的探针光束用于监测样品光学反射率的变化。 此外，提供电容电极以测量电极两端的电压的调制变化。 将这些测量结合起来以评估晶片。 这些测量在表征超小结点方面特别有用。

    Shape metric based scoring of wafer locations
    67.
    发明授权
    Shape metric based scoring of wafer locations 有权

    公开(公告)号：US10714366B2

    公开(公告)日：2020-07-14

    申请号：US16375851

    申请日：2019-04-04

    Applicant: KLA-Tencor Corporation

    Inventor： Saibal Banerjee ,  Jagdish Chandra Saraswatula

    IPC: G03F7/20 ,  H01L21/67 ,  G01N21/95 ,  H01J37/22 ,  G01N21/956 ,  G06F30/398

    Abstract: Methods and systems for shape metric based scoring of wafer locations are provided. One method includes selecting shape based grouping (SBG) rules for at least two locations on a wafer. For one of the wafer locations, the selecting step includes modifying distances between geometric primitives in a design for the wafer with metrology data for the one location and determining metrical complexity (MC) scores for SBG rules associated with the geometric primitives in a field of view centered on the one location based on the distances. The selecting step also includes selecting one of the SBG rules for the one location based on the MC scores. The method also includes sorting the at least two locations on the wafer based on the SBG rule selected for the at least two locations.

    Active learning for defect classifier training
    68.
    发明授权
    Active learning for defect classifier training 有权

    公开(公告)号：US10713769B2

    公开(公告)日：2020-07-14

    申请号：US16424431

    申请日：2019-05-28

    Applicant: KLA-Tencor Corporation

    Inventor： Jing Zhang ,  Yujie Dong ,  Brian Duffy ,  Richard Wallingford ,  Michael Daino ,  Kris Bhaskar

    IPC: G06T7/00 ,  G06N3/08 ,  G06K9/62 ,  G06N3/04 ,  G06N7/00 ,  G06N20/00 ,  G06F17/18

    Abstract: Methods and systems for performing active learning for defect classifiers are provided. One system includes one or more computer subsystems configured for performing active learning for training a defect classifier. The active learning includes applying an acquisition function to data points for the specimen. The acquisition function selects one or more of the data points based on uncertainty estimations associated with the data points. The active learning also includes acquiring labels for the selected one or more data points and generating a set of labeled data that includes the selected one or more data points and the acquired labels. The computer subsystem(s) are also configured for training the defect classifier using the set of labeled data. The defect classifier is configured for classifying defects detected on the specimen using the images generated by the imaging subsystem.

    Training a learning based defect classifier
    69.
    发明授权
    Training a learning based defect classifier 有权

    公开(公告)号：US10713534B2

    公开(公告)日：2020-07-14

    申请号：US16109631

    申请日：2018-08-22

    Applicant: KLA-Tencor Corporation

    Inventor： Bjorn Brauer

    IPC: G06K9/00 ,  H01L21/00 ,  G06K9/62 ,  G06T7/00

    Abstract: Methods and systems for training a learning based defect classifier are provided. One method includes training a learning based defect classifier with a training set of defects that includes identified defects of interest (DOIs) and identified nuisances. The DOIs and nuisances in the training set include DOIs and nuisances identified on at least one training wafer and at least one inspection wafer. The at least one training wafer is known to have an abnormally high defectivity and the at least one inspection wafer is expected to have normal defectivity.

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