公开(公告)号：US20080282042A1

公开(公告)日：2008-11-13

申请号：US12151946

申请日：2008-05-09

Applicant: Jin-Hyoung Kwon ,  Han-Gu Sohn ,  Dong-Woo Lee

Inventor： Jin-Hyoung Kwon ,  Han-Gu Sohn ,  Dong-Woo Lee

IPC: G06F12/00

CPC classification number: G06F13/1663 ,  G11C7/1075 ,  G11C11/4094

Abstract: A multiprocessor system includes first and second processors and a multi-path accessible semiconductor memory device including a shared memory area and a pseudo operation execution unit. The shared memory area is accessible by the first and second processors according to a page open policy. The pseudo operation execution unit responds to a virtual active command from one of the first and second processors to close a last-opened page. The virtual active command is generated with a row address not corresponding to any row of the shared memory area. For example, bit-lines of a last accessed row are pre-charged for closing the last-opened page.

Abstract translation: 多处理器系统包括第一和第二处理器以及包括共享存储器区域和伪操作执行单元的多路径可访问半导体存储器件。 根据页面打开策略，共享存储器区域可由第一和第二处理器访问。 伪操作执行单元响应来自第一和第二处理器之一的虚拟活动命令以关闭最后打开的页面。 生成虚拟活动命令，其中行地址不对应于共享存储器区域的任何行。 例如，最后访问的行的位线是预先关闭最后打开的页面的。

公开(公告)号：US20080256305A1

公开(公告)日：2008-10-16

申请号：US12053742

申请日：2008-03-24

Applicant: Jin-Hyoung KWON ,  Han-Gu SOHN ,  Dong-Woo LEE

Inventor： Jin-Hyoung KWON ,  Han-Gu SOHN ,  Dong-Woo LEE

IPC: G06F12/02

CPC classification number: G06F15/167 ,  G06F2212/2022

Abstract: A multipath accessible semiconductor memory device provides an interfacing function between multiple processors which indirectly controls a flash memory. The multipath accessible semiconductor memory device comprises a shared memory area, an internal register and a control unit. The shared memory area is accessed by first and second processors through different ports and is allocated to a portion of a memory cell array. The internal register is located outside the memory cell array and is accessed by the first and second processors. The control unit provides storage of address map data associated with the flash memory outside the shared memory area so that the first processor indirectly accesses the flash memory by using the shared memory area and the internal register even when only the second processor is coupled to the flash memory. The control unit also controls a connection path between the shared memory area and one of the first and second processors. The processors share the flash memory and a multiprocessor system is provided that has a compact size, thereby substantially reducing the cost of memory utilized within the multiprocessor system.

Abstract translation: 多路可及半导体存储器件提供间接控制闪速存储器的多个处理器之间的接口功能。 多路径可访问半导体存储器件包括共享存储区域，内部寄存器和控制单元。 共享存储器区域由第一和第二处理器通过不同的端口访问，并被分配给存储单元阵列的一部分。 内部寄存器位于存储单元阵列外部，由第一和第二处理器访问。 控制单元提供与共享存储器区域之外的闪存相关联的地址映射数据的存储，使得即使当仅第二处理器耦合到闪存时，第一处理器也通过使用共享存储器区域和内部寄存器来间接访问闪速存储器 记忆。 控制单元还控制共享存储器区域和第一和第二处理器之一之间的连接路径。 处理器共享闪存，并提供具有紧凑尺寸的多处理器系统，从而显着降低在多处理器系统内使用的存储器的成本。

公开(公告)号：US20080219724A1

公开(公告)日：2008-09-11

申请号：US11779468

申请日：2007-07-18

Applicant: Dong Woo Lee ,  Tae Gyu Kim ,  Su Ho Shin ,  Hwan Guem Kim

Inventor： Dong Woo Lee ,  Tae Gyu Kim ,  Su Ho Shin ,  Hwan Guem Kim

IPC: G03G15/20

CPC classification number: G03G15/2053 ,  G03G2215/2025

Abstract: An image heating apparatus including: a pressure member; a fixing roller to rotate on the pressure member; a heater to heat an external surface of the fixing roller; and a film to be heated by the heater. While passing through a gap between the pressure member and the fixing roller, the film may form a nip with the pressure member. The image heating apparatus may reduce an initial warm-up time through a film heating operation, and may utilize the fixing roller as a heat reservoir by heating the fixing roller.

Abstract translation: 一种图像加热装置，包括：压力构件; 定影辊，用于在压力构件上旋转; 用于加热定影辊的外表面的加热器; 以及由加热器加热的薄膜。 当通过压力构件和定影辊之间的间隙时，膜可以与压力构件形成压区。 图像加热装置可以通过膜加热操作来减少初始预热时间，并且可以通过加热定影辊来将定影辊用作储热器。

公开(公告)号：US07423704B2

公开(公告)日：2008-09-09

申请号：US11123200

申请日：2005-05-06

Applicant: Jin-woo Cho ,  Seong-woon Booh ,  Young-ki Kim ,  Dong-woo Lee ,  Dong-ok Kwak ,  Ki-taek Kim

Inventor： Jin-woo Cho ,  Seong-woon Booh ,  Young-ki Kim ,  Dong-woo Lee ,  Dong-ok Kwak ,  Ki-taek Kim

IPC: G02F1/1333 ,  H04M1/02

CPC classification number: G02F1/133308 ,  G02F2001/133317 ,  G02F2201/465 ,  G02F2201/503

Abstract: An LCD module is provided for use in a hand-held portable phone, which is eminently improved in impact-resistant property. The LCD module includes an LCD panel, a mold frame for receiving and supporting the LCD panel, and a chassis for reinforcing the rigidity of the mold frame, wherein the mold frame and the chassis are integrally insert-molded.

Abstract translation: 提供了用于手持便携式电话中的LCD模块，其在抗冲击性方面得到了显着改善。 LCD模块包括LCD面板，用于接收和支撑LCD面板的模架，以及用于增强模架刚性的底座，其中模框和底座被一体地嵌入成型。

公开(公告)号：US20080123431A1

公开(公告)日：2008-05-29

申请号：US11871371

申请日：2007-10-12

Applicant: Jong-In CHOI ,  Dong-Woo LEE

Inventor： Jong-In CHOI ,  Dong-Woo LEE

IPC: G11C16/04

CPC classification number: G11C16/24 ,  G11C16/10

Abstract: A flash memory device and a method of programming a flash memory device include selecting bit lines connected to program cells of multiple memory cells coupled to a selected word line. The selected bit lines are driven to a bit line program voltage through a write driver circuit connected to first ends of the selected bit lines. The selected bit lines are also driven to the bit line program voltage through a bit line detecting/driving circuit connected to second ends of the selected bit lines. The bit line detecting/driving circuit activates the selected bit lines synchronously with voltage variations of the selected bit lines.

Abstract translation: 快闪存储器件和闪速存储器件的编程方法包括：选择连接到与选定字线耦合的多个存储器单元的编程单元的位线。 所选择的位线通过连接到所选位线的第一端的写入驱动器电路被驱动到位线编程电压。 所选择的位线也通过与选定位线的第二端连接的位线检测/驱动电路驱动到位线编程电压。 位线检测/驱动电路与所选位线的电压变化同步地激活所选择的位线。

公开(公告)号：US20080090112A1

公开(公告)日：2008-04-17

申请号：US11692533

申请日：2007-03-28

Applicant: Dong-Woo Lee ,  Tae-Sang Park

Inventor： Dong-Woo Lee ,  Tae-Sang Park

IPC: H01M8/18 ,  H01M8/04

CPC classification number: B01J8/0496 ,  B01J8/0411 ,  B01J2208/00504 ,  C01B3/384 ,  C01B3/48 ,  C01B2203/0233 ,  C01B2203/0283 ,  C01B2203/066 ,  C01B2203/0816 ,  C01B2203/1005 ,  C01B2203/1241 ,  H01M8/0618 ,  H01M8/0631

Abstract: A hydrogen generator and a method of operating the hydrogen generator. The hydrogen generator includes: a cylindrical reformer catalyst; and a cylindrical shift catalyst disposed inside of the reformer catalyst; a separation wall provided between the reformer catalyst and the shift catalyst; a cylinder that is disposed inside of the reformer catalyst, and comprises, on an outer surface thereof, a plurality of first nozzles to direct a plurality of flames to the reformer catalyst and a plurality of second nozzles to direct a plurality of flames to the shift catalyst; and a combustion fuel supply valve that selectively guides a combustion fuel to the first nozzles and or the second nozzles. The method includes heating the shift catalyst by supplying a combustion fuel to the second nozzles, making flames by igniting the combustion fuel that passes through the second nozzles, and directing the flames towards the shift catalyst, and stopping the heating of the shift catalyst by blocking the supply of the combustion fuel to the second nozzles when the temperature of the shift catalyst reaches the shift reaction temperature.

Abstract translation: 氢发生器和操作氢发生器的方法。 氢气发生器包括：圆筒形重整器催化剂; 以及设置在所述重整器催化剂内部的圆筒形变速催化剂; 设置在重整器催化剂和变换催化剂之间的分隔壁; 设置在重整器催化剂内部的圆筒，在其外表面上包括多个第一喷嘴以将多个火焰引导至重整器催化剂，以及多个第二喷嘴将多个火焰引导到换挡 催化剂; 以及燃烧燃料供给阀，其选择性地将燃料燃料引导到第一喷嘴和/或第二喷嘴。 该方法包括通过向第二喷嘴提供燃烧燃料来加热变换催化剂，通过点燃通过第二喷嘴的燃烧燃料产生火焰，并将火焰引向变换催化剂，并通过阻塞来停止加热变换催化剂 当变换催化剂的温度达到转变反应温度时，向第二喷嘴供应燃烧燃料。

公开(公告)号：US20080049520A1

公开(公告)日：2008-02-28

申请号：US11730800

申请日：2007-04-04

Applicant: Shin-wook Kang ,  Dong-woo Lee

Inventor： Shin-wook Kang ,  Dong-woo Lee

IPC: G11C11/40

CPC classification number: G11C16/10

Abstract: Provided are a flash memory system and a programming method performed in the flash memory system. The flash memory system includes a buffer unit including a plurality of buffers, and temporarily storing data transmitted by a host; a plurality of channel units each including at least one flash memory chip that includes a plurality of memory cell arrays; and a control unit which controls the data stored in the buffer unit to be sequentially transmitted to the channel units and the transmitted data to be recorded to the memory cell arrays of the flash memory chips in the channel units.

Abstract translation: 提供了一种在闪存系统中执行的闪存系统和编程方法。 闪速存储器系统包括：缓冲单元，包括多个缓冲器，并临时存储主机发送的数据; 多个通道单元，每个通道单元包括至少一个包括多个存储单元阵列的闪存芯片; 以及控制单元，其将存储在缓冲器单元中的数据顺序地发送到频道单元，并将发送的数据记录到频道单元中的闪存芯片的存储单元阵列。

公开(公告)号：US20080049513A1

公开(公告)日：2008-02-28

申请号：US11713638

申请日：2007-03-05

Applicant: Seong-hun Jeong ,  Houng-sog Min ,  Dong-woo Lee ,  Shin-wook Kang ,  Hyang-suk Park

Inventor： Seong-hun Jeong ,  Houng-sog Min ,  Dong-woo Lee ,  Shin-wook Kang ,  Hyang-suk Park

IPC: G11C16/10

CPC classification number: G11C16/102 ,  G11C2216/14

Abstract: A method and apparatus are provided for programming a non-volatile data storage device, in which a fast write operation can be performed using a plurality of page buffers included in the non-volatile data storage device when the write operation is performed in a way of using interleaving for each channel in a multi-channel system using a plurality of non-volatile data storage devices. The method includes programming data in a memory cell array included in the non-volatile data storage device using a page buffer selected from among a plurality of page buffers included in the non-volatile data storage device and performing a setup operation for loading data using another page buffer, which is different from the page buffer selected during the programming.

Abstract translation: 提供了一种用于对非易失性数据存储装置进行编程的方法和装置，其中当以非法数据存储装置的方式执行写入操作时，可以使用包括在非易失性数据存储装置中的多个页缓冲器执行快速写入操作 使用多个非易失性数据存储设备在多信道系统中对每个信道进行交织。 该方法包括使用从非易失性数据存储装置中包括的多个页缓冲器中选择的页缓冲器来编程包括在非易失性数据存储装置中的存储单元阵列中的数据，并执行用于使用另一个装载数据加载数据的设置操作 页面缓冲区，与编程期间选择的页面缓冲区不同。

公开(公告)号：US20070297260A1

公开(公告)日：2007-12-27

申请号：US11811601

申请日：2007-06-11

Applicant: Dong-Woo Lee ,  Jung-Yong Choi

Inventor： Dong-Woo Lee ,  Jung-Yong Choi

IPC: G11C11/34 ,  G11C7/00 ,  G11C8/00 ,  G11C7/04

CPC classification number: G11C11/406 ,  G11C7/04 ,  G11C7/1045 ,  G11C7/1048 ,  G11C7/1051 ,  G11C7/1069 ,  G11C11/40603 ,  G11C11/40626 ,  G11C11/4093

Abstract: A semiconductor memory device includes a mode register, an additional function executer, and an additional function controller. The mode register activates an additional function control signal when a mode register set code indicates that an additional function is to be executed concurrently with a refresh operation. The additional function controller controls the additional function executer to carry out the additional function concurrently with the refresh operation when the additional function control signal is activated.

Abstract translation: 半导体存储器件包括模式寄存器，附加功能执行器和附加功能控制器。 当模式寄存器组代码指示要与刷新操作同时执行附加功能时，模式寄存器激活附加功能控制信号。 当附加功能控制信号被激活时，附加功能控制器控制附加功能执行器与刷新操作同时执行附加功能。

公开(公告)号：US20070171146A1

公开(公告)日：2007-07-26

申请号：US11657083

申请日：2007-01-24

Applicant: Dong Woo Lee ,  Soo Ryong Hwang ,  Moo Youn Park

Inventor： Dong Woo Lee ,  Soo Ryong Hwang ,  Moo Youn Park

IPC: G09G3/14

CPC classification number: H05B33/0851 ,  G09G3/3406 ,  G09G2320/041

Abstract: An LED driving apparatus having a temperature compensation function includes a reference voltage generator for generating a first reference voltage and a non-inversion amplification unit for performing non-inversion amplification to a difference voltage between the first reference voltage and a forward voltage with a preset gain. A driving unit adjusts a supply voltage in response to the voltage from the non-inversion amplification unit to supply the adjusted supply voltage to a light source having light emitting diodes. A forward voltage detector detects the forward voltage at an anode of the light emitting diodes of the light source to supply the forward voltage to the non-inversion amplification unit. Luminance variation can be compensated according to temperature changes by using a forward voltage of an LED light source so that the forward voltage of the LED light source can be controlled in association with a target current value of ambient temperature.

Abstract translation: 具有温度补偿功能的LED驱动装置包括用于产生第一参考电压的参考电压发生器和用于对第一参考电压和正向电压之间的差电压执行非反相放大的预设增益 。 驱动单元响应于来自非反相放大单元的电压调节电源电压，以将经调整的电源电压提供给具有发光二极管的光源。 正向电压检测器检测光源的发光二极管的阳极处的正向电压，以向非反相放大单元提供正向电压。 可以通过使用LED光源的正向电压根据温度变化来补偿亮度变化，使得可以与目标电流值环境温度相关联地控制LED光源的正向电压。