摘要:
A semiconductor memory apparatus includes a clock generator configured to generate an internal clock signal, an asynchronous data input buffer configured to buffer a data input signal through a data pad to output a buffered data signal, and a synchronous data input buffer configured to buffer the buffered data signal synchronously with the internal clock signal, wherein a length of a line, through which the internal clock signal is transmitted to the synchronous data input buffer, is configured to be substantially the same with a length of a line, through which the buffered data is transmitted to the synchronous data input buffer.
摘要:
The input buffer circuit of a semiconductor apparatus includes a first buffering unit that that is activated by a voltage level difference between a first voltage terminal and a second voltage terminal, and generates a first compare signal and a second compare signal by comparing the voltage levels of reference voltage and an input signal; a control unit that controls the amount of current flowing between the second voltage terminal and a ground terminal by comparing the voltage levels of the reference voltage and the second compare signal; and a second buffering unit that generates an output signal by comparing the voltage levels of the input signal and the first compare signal.
摘要:
A buffer circuit of a semiconductor memory apparatus includes a buffering section configured to increase or decrease a voltage level of an output node by comparing a voltage level of an input signal with a voltage level of a reference voltage. A voltage compensation section applies a voltage to the output node in proportion to a variation of the reference voltage when the level of the reference voltage is lower than a target level.
摘要:
A power noise detecting device includes a plurality of power lines, and a power noise detecting part configured to detect power noise by rectifying voltages of the plurality of power lines and converting the rectified voltages into effective voltages.
摘要:
A data receiver of a semiconductor integrated circuit includes an amplifier that outputs an amplified signal by detecting and amplifying received data using equalization function according to feedback data, a detecting unit that detects a period when data is not received in the amplifier and outputs a detecting signal, and an equalization function control unit that stops the equalization function of the amplifier in response to the detecting signal.
摘要:
A delay locked loop circuit includes a phase detecting unit for detecting a phase difference between a reference clock signal and a feedback clock signal, and for producing a phase difference detection signal, a code generating unit for producing a digital code signal according to the phase difference detection signal, a control current generating unit for generating a control current using the digital code signal, and a current controlled delay line for producing the feedback clock signal by delaying the reference clock signal by a delay time varied by the control current.
摘要:
An apparatus for removing crosstalk in a semiconductor memory device includes pads for receiving externally provided signals, transmission lines for delivering the signals received by each of the pads to corresponding elements in the apparatus, and capacitors, coupled between adjacent ones of the lines, for adjusting the transmission delay of the signals depending on a signal transmission mode between the adjacent lines.
摘要:
An output driving device capable of improving a slew rate is provided. The output driving device includes a push-pull type driving unit configured with a pull-up PMOS transistor and a pull-down NMOS transistor, wherein body biases of the pull-up PMOS transistor and the pull-down NMOS transistor are controlled for control of a slew rate of an output signal of the driving unit.
摘要:
A duty cycle correction circuit includes a phase splitter configured to control a phase of a DLL clock signal to generate a rising clock signal and a falling clock signal, a clock delay unit configured to delay the rising clock signal and the falling clock signal in response to control signals to generate a delayed rising clock signal and a delayed falling clock signal, a duty ratio correction unit configured to generate a correction rising clock signal and a correction falling clock signal that toggle in response to an edge timing of the delayed rising clock signal and the delayed falling clock signal, and a delay control unit configured to detect duty cycles of the correction rising clock signal and the correction falling clock signal to generate the control signals.
摘要:
A duty ratio correction circuit including a reference clock generation block configured to generate first and second reference clocks that synchronize with rising and falling edges of an external clock and have a primarily corrected duty ratio, and a duty ratio adjustment block for generating first and second internal clocks in response to the first and second reference clocks, and secondarily correcting a duty ratio of the first and second reference clocks by adjusting phases of the first and second reference clocks by means of plural digital control signals generated according to phase difference between the first and second internal clocks.