Abstract:
A transmissive organic light emitting diode (OLED) with improved external light efficiency and a transmissive lighting device including the same are provided. The OLED includes a transparent anode formed on a substrate, an organic emission layer formed on the transparent anode, a cathode formed on the organic emission layer, and a light extraction enhancing layer formed on the transparent cathode, and configured to change a path of light generated from the organic emission layer to enhance light extraction efficiency of the OLED. The external light extraction efficiency is enhanced in both-sided or single-sided emission of the OLED and the external light extraction efficiencies of bottom and top surfaces of the OLED are selectively or simultaneously enhanced. An external light extraction ratio between the bottom and top surfaces in both-sided emission is controlled.
Abstract:
Provided are an organic-light-emitting-diode (OLED) flat-panel light-source apparatus and a method of manufacturing the same. The device includes an anode and a cathode, to which externally applied power is supplied, disposed on a substrate, an organic emission layer (EML) interposed between the anode and the cathode and configured to emit light due to power supplied through the anode and the cathode, and a subsidiary electrode layer including a plurality of subsidiary electrodes bonded to the anode or the cathode and configured to supply power to the anode or the cathode or electrically insulated from the anode or the cathode and configured to supply power to other emission regions.
Abstract:
Provided is a composition for an oxide semiconductor thin film and a field effect transistor (FET) using the composition. The composition includes from about 50 to about 99 mol % of a zinc oxide (ZnO); from about 0.5 to 49.5 mol % of a tin oxide (SnOx); and remaining molar percentage of an aluminum oxide (AlOx). The thin film formed of the composition remains in amorphous phase at a temperature of 400° C. or less. The FET includes an active layer formed of the composition and has improved electrical characteristics. The FET can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.
Abstract:
An organic light emitting diode (OLED) device is provided. The OLED device includes: a substrate; an anode formed on the substrate; a first organic thin layer formed on the anode; an organic emission layer formed on the first organic thin layer; a second organic thin layer formed on the organic emission layer; and a cathode formed on the second organic thin layer, wherein the first and second organic thin layers are formed in a single layer or a multi-layer, and at least a part of the first or second organic thin layer is doped with or formed of an insulator. The OLED device provides excellent durability, long life-time, and increased luminous efficiency by balanced charge injection caused by doping or stacking the insulator into or on the organic thin layer.
Abstract:
A stacked organic light-emitting device is provided. The stacked organic light-emitting device includes a first electrode, first and second light-emitting units formed under and on the first electrode respectively, transparent or semi-transparent second and third electrodes formed under the first light-emitting unit and on the second light-emitting unit respectively, and having the same polarity, and a drive controller electrically connected with the first, second and third electrodes to connect the first and second light-emitting units in parallel, and capable of controlling at least one of the first and second light-emitting units to emit light. Accordingly, the organic light-emitting device has a lower driving voltage than a conventional stacked light-emitting device in which light-emitting units are serially connected.
Abstract:
Provided are a hybrid white organic light emitting diode (OLED) and a method of fabricating the same. A HOMO level difference between a fluorescent emission layer and an electron transport layer in an organic emission layer (OLED) becomes higher than that between the other layers or a LUMO level difference between a fluorescent emission layer and a hole transport layer is higher than that between the other layers, so that a recombination region is restricted to a part of an emission layer to obtain high-efficiency fluorescent light emission. In addition, triplet excitons that are not used in a fluorescent emission layer are transferred to an auxiliary emission layer formed to be spaced apart from a recombination region by a predetermined distance to emit light in a different color from the fluorescent emission layer, so that both singlet and triplet excitons formed in the OLED are used to obtain high-efficiency white light emission.
Abstract:
Provided are a thin film transistor, to which a boron-doped oxide semiconductor thin film is applied as a channel layer, and a method of fabricating the same. The thin film transistor includes source and drain electrodes, a channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The channel layer is an oxide semiconductor thin film doped with boron. Therefore, it is possible to remarkably improve electrical characteristics and high temperature stability of the thin film transistor.
Abstract:
An organic light emitting diode (OLED) device is provided. The OLED device includes: a substrate; an anode formed on the substrate; a first organic thin layer formed on the anode; an organic emission layer formed on the first organic thin layer; a second organic thin layer formed on the organic emission layer; and a cathode formed on the second organic thin layer, wherein the first and second organic thin layers are formed in a single layer or a multi-layer, and at least a part of the first or second organic thin layer is doped with or formed of an insulator. The OLED device provides excellent durability, long life-time, and increased luminous efficiency by balanced charge injection caused by doping or stacking the insulator into or on the organic thin layer.
Abstract:
Provided are compounds having molecular components capable of transporting/injecting hole and an organic EL device having a self-assembled monolayer comprising the same. The compound has the following formula: Ar—R—SiX3 wherein Ar is a functional group having hole transporting or injecting capability, R is a C1 to C22 alkyl group, and X is an alkoxy group or halogen.
Abstract:
A method of manufacturing a polarization switching surface-emitting laser in which a laser resonance wavelength depends on changing the polarization of the laser, by changing the refractivity of a compound semiconductor mirror layer of the laser depending on polarizations using an electro-optic effect of compound semiconductor materials such as GsAs and applying an electric field thereto.