公开(公告)号：US5939729A

公开(公告)日：1999-08-17

申请号：US976776

申请日：1997-11-24

Applicant: Hye Yong Chu ,  Kyu-Suk Lee ,  Byueng-Su Yoo ,  Hyo-Hoon Park

Inventor： Hye Yong Chu ,  Kyu-Suk Lee ,  Byueng-Su Yoo ,  Hyo-Hoon Park

IPC: H01S3/00 ,  H01L31/0352 ,  H01L31/103 ,  H01L29/06

CPC classification number: B82Y20/00 ,  H01L31/035236 ,  H01L31/1035

Abstract: The present invention relates to a semiconductor photoelectric device including a InAs layer formed to monoatomic thickness sandwiched between spacer layers adjacent to an emitter to maximize a difference in energy between two quantum states in accumulation layer of a resonant tunneling diode having a double barrier structure, resulting in separating the resonant tunneling current determined by two quantum states of the triangular well in accumulation layer of resonant tunneling diode, even when light of a low intensity is irradiated to the surface of the resonant tunneling diode. Thus, there is provided an optical controlled resonant tunneling diode, making it possible to manufacturing a switching device for controlling an electric signal using light source by adjusting, using light, the resonant tunneling determined by an excited state of the triangular well.

Abstract translation: 本发明涉及一种半导体光电器件，其包括形成为单原子厚度的InAs层，夹在与发射极相邻的间隔层之间，以使具有双重屏障结构的谐振隧道二极管的累积层中的两个量子态之间的能量差最大化，从而产生 在谐振隧道二极管的累积层中分离由三角形阱的两个量子态确定的谐振隧穿电流，即使当低强度的光照射到谐振隧穿二极管的表面时。 因此，提供了一种光控谐振隧道二极管，使得可以通过使用光调节由三角形阱的激发状态确定的谐振隧穿来制造用于使用光源控制电信号的开关装置。

公开(公告)号：US06343090B1

公开(公告)日：2002-01-29

申请号：US09141794

申请日：1998-08-28

Applicant: Byueng Su Yoo ,  Hye Yong Chu ,  Hyo Hoon Park ,  Kyung Sook Hyun ,  El Hang Lee

Inventor： Byueng Su Yoo ,  Hye Yong Chu ,  Hyo Hoon Park ,  Kyung Sook Hyun ,  El Hang Lee

IPC: H10S308

CPC classification number: H01S5/18388 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/205 ,  H01S2301/166 ,  H01S2301/176

Abstract: A single mode surface emitting laser and its manufacturing method are provided. The surface emitting laser which has a characteristic of single transverse mode radiation in the broad region using reflectivity distribution of a reflector layer with an antiguide clad is provided. The single mode surface emitting laser comprises an n-type semiconductor substrate having an n-type lower electrode and an antireflection film thereunder, a laser pillar formed on the semiconductor substrate, the laser pillar having a bottom DBR, an active layer and a top DBR, a control layer formed on said laser pillar, the control layer consisting of a compound semiconductor of which energy gap is larger than radiation wavelength, an antiguide clad layer covering an outer portion of the laser pillar including the control layer and has higher reflective index than those of the active layer or the top DBR forming the laser pillar, a top electrode formed on the antiguide clad layer and the control layer, and an insulation film between the antiguide clad layer and the top electrode.

Abstract translation: 提供单模表面发射激光器及其制造方法。 提供了具有使用具有防反射层的反射层的反射率分布的广域中具有单横模辐射特性的表面发射激光器。 单模面发光激光器包括在其上具有n型下电极和抗反射膜的n型半导体衬底，形成在半导体衬底上的激光柱，具有底部DBR的激光柱，有源层和顶部DBR 形成在所述激光柱上的控制层，所述控制层由能隙大于辐射波长的化合物半导体构成，覆盖所述控制层的所述激光柱的外部的反射覆盖层具有比所述控制层更高的反射指数 形成激光柱的有源层或顶部DBR，形成在防反射覆层和控制层上的顶部电极，以及在防反射覆盖层和顶部电极之间的绝缘膜。

公开(公告)号：US5770851A

公开(公告)日：1998-06-23

申请号：US713535

申请日：1996-09-13

Applicant: Hyo-Hoon Park ,  Kwang-Joon Kim ,  Kyung-Sook Hyun ,  O-Kyun Kwon ,  Seok-Ho Song ,  Byueng-Su Yoo ,  Hye-Yong Chu

Inventor： Hyo-Hoon Park ,  Kwang-Joon Kim ,  Kyung-Sook Hyun ,  O-Kyun Kwon ,  Seok-Ho Song ,  Byueng-Su Yoo ,  Hye-Yong Chu

IPC: G02B6/43 ,  G02F3/02 ,  H01J40/14

CPC classification number: G02F3/028 ,  G02B6/43

Abstract: An improved parallel optical logic operator provides a path for light to pass through substrates in which a light source and an optical logic device are arranged. An optical logic device operates by transmission of light forwarded to a predetermined direction. This increases integration efficiency of the system by eliminating optical parts for changing the light path. A unit chip includes a laser array for generating a predetermined light in accordance with an electrical signal for a logic process, a laser array substrate on which via holes are formed for passing light, a microlens array for converting the light beam emitted from each laser device of the laser array into a parallel light beam for passing through the via hole, and an optical logic circuit array formed with a combination of an S-SEED which performs a logic function by transmission of the light signal through an optical window in S-SEED. A plurality of unit chips are laminated so that the light emitted from the laser device of one of the unit chips passes through an optical logic circuit of a corresponding unit chip and can be made incident on the optical logic circuit in the next unit chip through a via hole.

Abstract translation: 改进的并行光逻辑运算器提供光通过其中布置光源和光逻辑器件的衬底的路径。 光逻辑器件通过传输转发到预定方向的光来操作。 这通过消除用于改变光路的光学部件来提高系统的集成效率。 单元芯片包括用于根据用于逻辑处理的电信号产生预定光的激光阵列，其上形成有用于通过光的通孔的激光阵列基板，用于转换从每个激光装置发射的光束的微透镜阵列 的激光器阵列的平行光束通过通孔;以及光学逻辑电路阵列，其形成有S-SEED的组合，S-SEED通过S-SEED中的光学窗口传输光信号来执行逻辑功能 。 多个单位芯片被层叠，使得从单个芯片之一的激光装置发射的光通过相应的单元芯片的光学逻辑电路，并且可以通过一个单元芯片入射到下一个单元芯片中的光学逻辑电路上 通孔。

公开(公告)号：US06727109B2

公开(公告)日：2004-04-27

申请号：US10210668

申请日：2002-07-31

Applicant: Young Gu Ju ,  Won Seok Han ,  O Kyun Kwon ,  Jae Heon Shin ,  Byueng Su Yoo ,  Jung Rae Ro

Inventor： Young Gu Ju ,  Won Seok Han ,  O Kyun Kwon ,  Jae Heon Shin ,  Byueng Su Yoo ,  Jung Rae Ro

IPC: H01L2100

CPC classification number: H01S5/18308 ,  H01L33/145 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2063

Abstract: The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes forming a layer having a high resistance near the surface by implanting heavy ions such as silicon (Si), so that the minimum current injection diameter is made very smaller unlike implantation of a proton. Further, the present invention includes regrowing crystal so that current can flow the epi surface in parallel to significantly reduce the resistance up to the current injection part formed by silicon (Si) ions. Therefore, the present invention can not only effectively reduce the current injection diameter but also significantly reduce the resistance of a device to reduce generation of a heat. Further, the present invention can further improve dispersion of a heat using InP upon regrowth and thus improve the entire performance of the device.

Abstract translation: 本发明涉及一种垂直腔表面发射激光器的制造方法，该激光器被视为用于长波长通信的光源。 本发明包括通过注入诸如硅（Si）的重离子在表面附近形成具有高电阻的层，使得最小电流注入直径不像植入质子那样非常小。 此外，本发明包括再生晶体，使得电流可以平行地流动外延表面，以显着降低直到由硅（Si）离子形成的电流注入部分的电阻。 因此，本发明不仅可以有效地降低电流注入直径，而且可以显着降低器件的电阻以减少发热。 此外，本发明可以进一步改善在再生后使用InP的散热分散，从而提高装置的整体性能。

公开(公告)号：US5773319A

公开(公告)日：1998-06-30

申请号：US842960

申请日：1997-04-25

Applicant: Hye-Yong Chu ,  Byueng-Su Yoo ,  Hyo-Hoon Park

Inventor： Hye-Yong Chu ,  Byueng-Su Yoo ,  Hyo-Hoon Park

IPC: H01S5/028 ,  H01S5/183 ,  H01S5/20 ,  H01L21/20 ,  H01S3/19

CPC classification number: H01S5/18308 ,  H01S5/0282 ,  H01S5/2059 ,  H01S5/423

Abstract: A method for producing a vertical-cavity surface-emitting laser, includes the steps of: forming a bottom mirror layer, an active layer and a top mirror layer on a semiconductor substrate; forming an antireflection layer on a rear surface of the semiconductor substrate; selectively etching peripheral portions of the antireflection layer to form a first electrode; defining laser emission portions through etching processing; forming a hydrogenated barrier over an entire surface of the resultant structure; forming a post; forming a passivation layer through the hydrogenating of the exposed top mirror layer and the portions of the active layer; forming a planarization film after the partial exposure of the top mirror and forming a second electrode pad to which the exposed top mirror layer contacts.

Abstract translation: 一种用于制造垂直腔表面发射激光器的方法，包括以下步骤：在半导体衬底上形成底镜层，有源层和顶镜层; 在半导体衬底的后表面上形成抗反射层; 选择性地蚀刻抗反射层的周边部分以形成第一电极; 通过蚀刻处理定义激光发射部分; 在所得结构的整个表面上形成氢化屏障; 组建岗位; 通过暴露的顶镜层和有源层的部分的氢化形成钝化层; 在顶部反射镜部分曝光之后形成平坦化膜，并形成露出的顶部反射镜层与之接触的第二电极焊盘。

公开(公告)号：US20070127533A1

公开(公告)日：2007-06-07

申请号：US11322186

申请日：2005-12-29

Applicant: Byueng Su Yoo ,  Jay Roh ,  Seong Ju Park ,  Ki Hwang Lee

Inventor： Byueng Su Yoo ,  Jay Roh ,  Seong Ju Park ,  Ki Hwang Lee

IPC: H01S5/00

CPC classification number: H01S5/18369 ,  B82Y20/00 ,  H01S5/0422 ,  H01S5/18311 ,  H01S5/3095 ,  H01S5/34306

Abstract: Disclosed herein is a vertical cavity surface emitting laser device. The laser device comprises a semiconductor lower mirror layer, a first semiconductor electrode layer, a gain-activation layer and a semiconductor anode layer sequentially grown on the compound semiconductor substrate, a re-growth pattern formed on the semiconductor anode layer to a width of 10˜100 μm and an etching depth equal to or less than the semiconductor anode layer by etching, a first anode semiconductor buffer layer grown at a low temperature on the pattern, a second anode semiconductor layer grown at the low temperature for formation of an oxide layer, an anode semiconductor layer for tunnel junction, a cathode semiconductor layer for tunnel junction, a second semiconductor electrode layer for injection of electrons, and an upper mirror layer formed on the second semiconductor electrode layer. With this structure, the laser device comprises an effective electric current confining structure.

Abstract translation: 本文公开了一种垂直腔表面发射激光器件。 激光装置包括在化合物半导体衬底上顺序生长的半导体下镜层，第一半导体电极层，增益激活层和半导体阳极层，在半导体阳极层上形成的宽度为10的再生长图案 通过蚀刻等于或小于半导体阳极层的蚀刻深度，在图案上在低温下生长的第一阳极半导体缓冲层，在低温下生长以形成氧化物层的第二阳极半导体层 用于隧道结的阳极半导体层，隧道结的阴极半导体层，用于注入电子的第二半导体电极层以及形成在第二半导体电极层上的上镜层。 利用这种结构，激光装置包括有效的电流限制结构。

公开(公告)号：US06621843B2

公开(公告)日：2003-09-16

申请号：US09842521

申请日：2001-04-25

Applicant: Byueng-Su Yoo ,  O-Kyun Kwon ,  Young-Gu Ju

Inventor： Byueng-Su Yoo ,  O-Kyun Kwon ,  Young-Gu Ju

IPC: H01S500

CPC classification number: B82Y20/00 ,  H01S5/18308 ,  H01S5/18316 ,  H01S5/18333 ,  H01S5/2009 ,  H01S5/2072 ,  H01S5/3054 ,  H01S5/34306 ,  H01S2301/176

Abstract: Disclosed is a surface-emitting laser device which eliminates an absorption loss of a p-type doped layer and reduces a scattering loss in a mirror layer and a carrier loss due to a current induction, comprising a first conductive type of semiconductor substrate; a bottom mirror layer formed on the semiconductor substrate and composed of a first conductive type of semiconductor layer; an active layer formed on the bottom mirror layer; an electron leakage barrier layer formed on the active layer and having an energy gap larger than the active layer; a current induction layer formed on the electron leakage barrier layer and a second conductive type of semiconductor layer; a current extension layer formed on the current induction layer and composed of the second conductive type of semiconductor layer; and a top mirror layer formed on the current extension layer, wherein the top mirror layer includes undoped center portion and its both end having the second conductive type of dopant diffusion region.

公开(公告)号：US06584136B2

公开(公告)日：2003-06-24

申请号：US09882342

申请日：2001-06-15

Applicant: Young-Gu Ju ,  Byueng-Su Yoo ,  O-Kyun Kwon

Inventor： Young-Gu Ju ,  Byueng-Su Yoo ,  O-Kyun Kwon

IPC: H01S308

CPC classification number: B82Y20/00 ,  B82Y10/00 ,  H01S5/005 ,  H01S5/0267 ,  H01S5/18

Abstract: A folded cavity laser for generating a laser beam, includes a substrate provided with a distributed Bragg reflector (DBR); an active medium formed above the DBR for amplifying the laser beam; a first and a second mirrors formed on sides of the active medium, respectively, for making a horizontal cavity and for reflecting the amplified laser beam to the DBR; and a microlens, formed on the substrate opposite the DBR, for making the amplified laser beam astigmatic after passing therethrough.

公开(公告)号：US06482665B1

公开(公告)日：2002-11-19

申请号：US09718188

申请日：2000-11-21

Applicant: Hye Yong Chu ,  Byueng-Su Yoo ,  Hyo-Hoon Park

Inventor： Hye Yong Chu ,  Byueng-Su Yoo ,  Hyo-Hoon Park

IPC: H01L2100

CPC classification number: H01S5/18302 ,  H01S5/0614 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18355

Abstract: A method of manufacturing a polarization switching surface-emitting laser in which a laser resonance wavelength depends on changing the polarization of the laser, by changing the refractivity of a compound semiconductor mirror layer of the laser depending on polarizations using an electro-optic effect of compound semiconductor materials such as GsAs and applying an electric field thereto.

Abstract translation: 一种制造偏振切换表面发射激光器的方法，其中激光谐振波长取决于改变激光器的偏振，通过使用化合物的电光效应根据偏振改变激光的化合物半导体镜层的折射率 半导体材料如GsAs并向其施加电场。

公开(公告)号：US06475818B1

公开(公告)日：2002-11-05

申请号：US09498507

申请日：2000-02-04

Applicant: O Kyun Kwon ,  Byueng Su Yoo ,  Jae Heon Shin ,  Jong Heob Baek

Inventor： O Kyun Kwon ,  Byueng Su Yoo ,  Jae Heon Shin ,  Jong Heob Baek

IPC: G01R3126

CPC classification number: H01L27/1443 ,  H01L27/1462 ,  H01L27/14625 ,  H01L31/0232 ,  Y10S438/942

Abstract: A method for fabricating a multi-channel array optical device having uniform spacing between different wavelengths and for having precise wavelengths by accomplishing wavelength adjustment and by the forming of mirror layers simultaneously through a multi-layer binary mask and a selective oxidization process. This method is especially useful for fabricating multi-channel array optical devices including multi-channel passive filters and multi-channel surface emitting laser arrays. The method includes forming a plurality of semiconductor mirror layers on a semiconductor substrate; forming an oxidization protective layer on the plurality of semiconductor mirror layers; selectively removing the oxidization protective layer by using a binary mask to expose the semiconductor mirror layer which will adjust a wavelength; oxidizing the exposed semiconductor mirror layer.

Abstract translation: 一种通过实现波长调整和通过多层二进制掩模和选择性氧化过程同时形成镜层来制造具有不同波长之间具有均匀间隔并且具有精确波长的多通道阵列光学器件的方法。 该方法对于制造包括多通道无源滤波器和多通道表面发射激光器阵列的多通道阵列光学器件尤其有用。 该方法包括在半导体衬底上形成多个半导体镜层; 在所述多个半导体镜层上形成氧化保护层; 通过使用二元掩模选择性地去除氧化保护层以暴露将调节波长的半导体镜层; 氧化暴露的半导体镜层。