公开(公告)号：US5939729A

公开(公告)日：1999-08-17

申请号：US976776

申请日：1997-11-24

申请人： Hye Yong Chu ,  Kyu-Suk Lee ,  Byueng-Su Yoo ,  Hyo-Hoon Park

发明人： Hye Yong Chu ,  Kyu-Suk Lee ,  Byueng-Su Yoo ,  Hyo-Hoon Park

IPC分类号： H01S3/00 ,  H01L31/0352 ,  H01L31/103 ,  H01L29/06

CPC分类号： B82Y20/00 ,  H01L31/035236 ,  H01L31/1035

摘要： The present invention relates to a semiconductor photoelectric device including a InAs layer formed to monoatomic thickness sandwiched between spacer layers adjacent to an emitter to maximize a difference in energy between two quantum states in accumulation layer of a resonant tunneling diode having a double barrier structure, resulting in separating the resonant tunneling current determined by two quantum states of the triangular well in accumulation layer of resonant tunneling diode, even when light of a low intensity is irradiated to the surface of the resonant tunneling diode. Thus, there is provided an optical controlled resonant tunneling diode, making it possible to manufacturing a switching device for controlling an electric signal using light source by adjusting, using light, the resonant tunneling determined by an excited state of the triangular well.

摘要翻译： 本发明涉及一种半导体光电器件，其包括形成为单原子厚度的InAs层，夹在与发射极相邻的间隔层之间，以使具有双重屏障结构的谐振隧道二极管的累积层中的两个量子态之间的能量差最大化，从而产生 在谐振隧道二极管的累积层中分离由三角形阱的两个量子态确定的谐振隧穿电流，即使当低强度的光照射到谐振隧穿二极管的表面时。 因此，提供了一种光控谐振隧道二极管，使得可以通过使用光调节由三角形阱的激发状态确定的谐振隧穿来制造用于使用光源控制电信号的开关装置。

公开(公告)号：US06343090B1

公开(公告)日：2002-01-29

申请号：US09141794

申请日：1998-08-28

申请人： Byueng Su Yoo ,  Hye Yong Chu ,  Hyo Hoon Park ,  Kyung Sook Hyun ,  El Hang Lee

发明人： Byueng Su Yoo ,  Hye Yong Chu ,  Hyo Hoon Park ,  Kyung Sook Hyun ,  El Hang Lee

IPC分类号： H10S308

CPC分类号： H01S5/18388 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/205 ,  H01S2301/166 ,  H01S2301/176

摘要： A single mode surface emitting laser and its manufacturing method are provided. The surface emitting laser which has a characteristic of single transverse mode radiation in the broad region using reflectivity distribution of a reflector layer with an antiguide clad is provided. The single mode surface emitting laser comprises an n-type semiconductor substrate having an n-type lower electrode and an antireflection film thereunder, a laser pillar formed on the semiconductor substrate, the laser pillar having a bottom DBR, an active layer and a top DBR, a control layer formed on said laser pillar, the control layer consisting of a compound semiconductor of which energy gap is larger than radiation wavelength, an antiguide clad layer covering an outer portion of the laser pillar including the control layer and has higher reflective index than those of the active layer or the top DBR forming the laser pillar, a top electrode formed on the antiguide clad layer and the control layer, and an insulation film between the antiguide clad layer and the top electrode.

摘要翻译： 提供单模表面发射激光器及其制造方法。 提供了具有使用具有防反射层的反射层的反射率分布的广域中具有单横模辐射特性的表面发射激光器。 单模面发光激光器包括在其上具有n型下电极和抗反射膜的n型半导体衬底，形成在半导体衬底上的激光柱，具有底部DBR的激光柱，有源层和顶部DBR 形成在所述激光柱上的控制层，所述控制层由能隙大于辐射波长的化合物半导体构成，覆盖所述控制层的所述激光柱的外部的反射覆盖层具有比所述控制层更高的反射指数 形成激光柱的有源层或顶部DBR，形成在防反射覆层和控制层上的顶部电极，以及在防反射覆盖层和顶部电极之间的绝缘膜。

公开(公告)号：US06482665B1

公开(公告)日：2002-11-19

申请号：US09718188

申请日：2000-11-21

申请人： Hye Yong Chu ,  Byueng-Su Yoo ,  Hyo-Hoon Park

发明人： Hye Yong Chu ,  Byueng-Su Yoo ,  Hyo-Hoon Park

IPC分类号： H01L2100

CPC分类号： H01S5/18302 ,  H01S5/0614 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18355

摘要： A method of manufacturing a polarization switching surface-emitting laser in which a laser resonance wavelength depends on changing the polarization of the laser, by changing the refractivity of a compound semiconductor mirror layer of the laser depending on polarizations using an electro-optic effect of compound semiconductor materials such as GsAs and applying an electric field thereto.

摘要翻译： 一种制造偏振切换表面发射激光器的方法，其中激光谐振波长取决于改变激光器的偏振，通过使用化合物的电光效应根据偏振改变激光的化合物半导体镜层的折射率 半导体材料如GsAs并向其施加电场。

公开(公告)号：US5888842A

公开(公告)日：1999-03-30

申请号：US919620

申请日：1997-08-28

申请人： Hye Yong Chu ,  Byueng-Su Yoo ,  Hyo-Hoon Park

发明人： Hye Yong Chu ,  Byueng-Su Yoo ,  Hyo-Hoon Park

IPC分类号： H01S3/00 ,  H01S5/183 ,  H01S5/42 ,  H01L21/20

CPC分类号： H01S5/18355 ,  H01S2301/176 ,  H01S5/0425 ,  H01S5/18352 ,  H01S5/2086 ,  H01S5/3202 ,  H01S5/423

摘要： A method for manufacturing a surface-emitting laser array device is disclosed. In order to control the polarization characteristics of the surface-emitting laser, the surface-emitting laser array device according to the present invention can be manufactured by alternately arranging the surface-emitting laser formed by inclining a cavity in the and direction in accordance with the row or the column direction of the surface-emitting laser, so that the polarization characteristics of the surface-emitting laser in two directions which are relatively perpendicular to each other may be obtained. According to the present invention, it has an advantageous effect that the interaction between the adjacent laser beams can be minimized with maintaining the symmetric feature of the lasing beam when manufacturing an integrated surface-emitting laser array device. Further, since the traveling direction of the lasing beam can be controlled depending upon the polarization characteristics, not only the optical interconnection or optical switching can easily be performed, but also the device can effectively be applied to the device, for example, the magneto-optic disk which is sensitive to the polarization characteristics.

摘要翻译： 公开了一种用于制造表面发射激光器阵列器件的方法。 为了控制表面发射激光器的偏振特性，根据本发明的表面发射激光器阵列器件可以通过将通过将空腔倾斜而形成的表面发射激光器交替布置在<110>和<1 + E，ov 1 + EE 0>方向，从而可以获得表面发射激光器在彼此相对垂直的两个方向上的偏振特性 。 根据本发明，具有这样的有利效果：当制造集成的表面发射激光器阵列器件时，可以通过保持激光束的对称特征来最小化相邻激光束之间的相互作用。 此外，由于可以根据极化特性来控制激光束的行进方向，不仅可以容易地进行光互连或光切换，而且可以有效地将器件应用于器件，例如， 对偏振特性敏感的光盘。

公开(公告)号：US08409935B2

公开(公告)日：2013-04-02

申请号：US13590768

申请日：2012-08-21

申请人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

发明人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

IPC分类号： H01L21/00

CPC分类号： H01L29/66742 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869

摘要： A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.

摘要翻译： 一种制造透明晶体管的方法，所述透明晶体管包括形成在所述基板上的基板，源极和漏极，每个具有下透明层，金属层和上透明层的多层结构，在所述源极和漏极之间形成的沟道 电极和与通道对准的栅电极。 下透明层或上透明层由与通道相同的透明半导体层形成。

公开(公告)号：US20100006837A1

公开(公告)日：2010-01-14

申请号：US12496558

申请日：2009-07-01

申请人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

发明人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01B1/08

CPC分类号： H01L29/7869 ,  C23C14/08 ,  H01L29/247

摘要： Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.

摘要翻译： 提供了一种用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造场效应晶体管的方法。 该组合物包括氧化铝，氧化锌，氧化铟和氧化锡。 由组合物形成的薄膜是非晶相。 具有由组合物形成的有源层的场效应晶体管可以具有改进的电特性并通过低温工艺制造。

公开(公告)号：US20060127697A1

公开(公告)日：2006-06-15

申请号：US11183207

申请日：2005-07-15

申请人： Hyoyoung Lee ,  Hye Yong Chu

发明人： Hyoyoung Lee ,  Hye Yong Chu

IPC分类号： H01L51/50 ,  H05B33/12

CPC分类号： H01L51/5088 ,  H01L51/0067 ,  H01L51/5052 ,  H01L51/5092 ,  Y10S428/917

摘要： An organic electroluminescent element including an organic compound layer which is composed of a C—F compound (PFPT) having a triazine group is provided. The organic electroluminescent element includes: two electrodes; and at least one organic compound layer formed between the two electrodes, in which the organic compound layer is doped with a triazine derivative compound represented by the following Formula: where each of R1, R2 and R3 is a perfluorophenylene derivative.

摘要翻译： 提供了包含由具有三嗪基的C-F化合物（PFPT）组成的有机化合物层的有机电致发光元件。 有机电致发光元件包括：两个电极; 以及形成在两个电极之间的至少一个有机化合物层，其中有机化合物层掺杂有由下式表示的三嗪衍生物化合物：其中R 1，R 2， R 3和R 3是全氟亚苯基衍生物。

公开(公告)号：US06933063B2

公开(公告)日：2005-08-23

申请号：US10007169

申请日：2001-11-30

申请人： Jeong Ik Lee ,  Hyoyoung Lee ,  Jiyoung Oh ,  Hye Yong Chu ,  Lee-Mi Do ,  Seong Hyun Kim ,  Taehyoung Zyung

发明人： Jeong Ik Lee ,  Hyoyoung Lee ,  Jiyoung Oh ,  Hye Yong Chu ,  Lee-Mi Do ,  Seong Hyun Kim ,  Taehyoung Zyung

IPC分类号： C07F7/30 ,  C08G61/02 ,  C08G61/10 ,  C09K11/06 ,  H01L51/30 ,  H01L51/50 ,  H05B33/14 ,  C07C43/03

CPC分类号： C09K11/06 ,  C08G61/02 ,  C08G61/10 ,  H01L51/0039 ,  H01L51/50 ,  Y10S428/917

摘要： Provided are spirobifluorene compounds which can provide excellent processibility with improved solubility in organic solvents, an electroluminescence (EL) polymer obtained therefrom and an EL element having the same. The EL polymer comprising repeating units of the following formula: wherein R1 and R2 are identical or different and are independently a straight-chain or branched alkyl group having from 1 to 22 carbon atoms or an aryl group substituted by C1-C22 alkyl, and at least one of the R1 and R2 contains one or more atoms selected from the group consisting of O, N, S, Si and Ge.

摘要翻译： 提供了可以提供优异的加工性的螺二芴化合物，其在有机溶剂中的溶解度提高，由其获得的电致发光（EL）聚合物和具有该溶剂的EL元件。 包含下式的重复单元的EL聚合物：其中R 1和R 2相同或不同，并且独立地为具有1至 22个碳原子或被C 1 -C 22烷基取代的芳基，以及R 1和R 2中的至少一个， 2 含有一个或多个选自O，N，S，Si和Ge的原子。

公开(公告)号：US06590125B2

公开(公告)日：2003-07-08

申请号：US09826027

申请日：2001-04-03

申请人： Do Hoon Hwang ,  Tae Hyoung Zyung ,  Lee Mi Do ,  Hye Yong Chu

发明人： Do Hoon Hwang ,  Tae Hyoung Zyung ,  Lee Mi Do ,  Hye Yong Chu

IPC分类号： C07F928

CPC分类号： H01L51/0036 ,  C08G61/02 ,  C08G61/10 ,  C08G73/0672 ,  C09K11/06 ,  H01L51/0035 ,  H01L51/0038 ,  H01L51/0043 ,  H01L51/5012 ,  Y10S428/917

摘要： A light-emitting polymer and its preparation method, the polymer being excellent in electron injection and transport ability as well as hole injection and transport ability in an EL device, the EL device manufactured from the polymer being also emittable in the blue emission region, in which the EL device from an inorganic material is not mostly emittable. The light-emitting polymer of the invention is an alternated copolymer having repeated units (arylenevinylene units) excellent in hole injection and transport ability and repeated units (fluorinated tetraphenyl units) excellent in electron injection and transport ability with alternated order, as shown in formula (II). An EL device manufactured from the light-emitting polymer, a fluorinated tetraphenyl derivative of formula (I), which is used as a monomer to prepare the light-emitting polymer, and their preparation methods.

摘要翻译： 一种发光聚合物及其制备方法，在EL器件中，电子注入和输送能力以及空穴注入和输送能力优异的聚合物，由聚合物制造的EL器件也可在蓝色发射区域中发射， 来自无机材料的EL器件不是大多数可发射的。 本发明的发光聚合物是具有优异的空穴注入和输送能力的重复单元（亚芳基亚乙烯基单元）和交替顺序优异的电子注入和输送能力的重复单元（氟化四苯基单元）的交替共聚物，如式 II）。 由发光聚合物制造的EL器件，用作制备发光聚合物的单体的式（I）的氟化四苯基衍生物及其制备方法。

公开(公告)号：US08685768B2

公开(公告)日：2014-04-01

申请号：US13494532

申请日：2012-06-12

申请人： Jin Woo Huh ,  Jeong Ik Lee ,  Chul Woong Joo ,  Doo-Hee Cho ,  Jin Wook Shin ,  Jaehyun Moon ,  Jun-Han Han ,  Joo Hyun Hwang ,  Hye Yong Chu ,  Byoung Gon Yu

发明人： Jin Woo Huh ,  Jeong Ik Lee ,  Chul Woong Joo ,  Doo-Hee Cho ,  Jin Wook Shin ,  Jaehyun Moon ,  Jun-Han Han ,  Joo Hyun Hwang ,  Hye Yong Chu ,  Byoung Gon Yu

IPC分类号： H01L21/00

CPC分类号： H01L51/5268 ,  H01L51/5275

摘要： The inventive concept provides organic light emitting diodes and methods of manufacturing an organic light emitting diode. The organic light emitting diode includes a substrate, a first electrode layer and a second electrode layer formed on the substrate, an organic light emitting layer disposed between the first electrode layer and the second electrode layer and generating light, and a scattering layer between the first electrode layer and the substrate or between the first electrode layer and the organic light emitting layer. The scattering layer scatters the light.

摘要翻译： 本发明构思提供有机发光二极管和制造有机发光二极管的方法。 有机发光二极管包括基板，第一电极层和形成在基板上的第二电极层，设置在第一电极层和第二电极层之间并产生光的有机发光层和在第一电极层之间的散射层 电极层和基板之间或第一电极层和有机发光层之间。 散射层散射光。