摘要:
Subsets of isolated communications networks are selectively merged without merging the entire isolated communications networks, and devices are imported across isolated communications networks without merging the isolated communications networks. The presently disclosed technology provides for improved scalability, performance, and security in logical networks spanning two or more physical communications networks.
摘要:
A Layer 2 network switch is partitionable into a plurality of switch fabrics. The single-chassis switch is partitionable into a plurality of logical switches, each associated with one of the virtual fabrics. The logical switches behave as complete and self-contained switches. A logical switch fabric can span multiple single-chassis switch chassis. Logical switches are connected by inter-switch links that can be either dedicated single-chassis links or logical links. An extended inter-switch link can be used to transport traffic for one or more logical inter-switch links. Physical ports of the chassis are assigned to logical switches and are managed by the logical switch. Legacy switches that are not partitionable into logical switches can serve as transit switches between two logical switches.
摘要:
A Layer 2 network switch is partitionable into a plurality of switch fabrics. The single-chassis switch is partitionable into a plurality of logical switches, each associated with one of the virtual fabrics. The logical switches behave as complete and self-contained switches. A logical switch fabric can span multiple single-chassis switch chassis. Logical switches are connected by inter-switch links that can be either dedicated single-chassis links or logical links. An extended inter-switch link can be used to transport traffic for one or more logical inter-switch links. Physical ports of the chassis are assigned to logical switches and are managed by the logical switch. Legacy switches that are not partitionable into logical switches can serve as transit switches between two logical switches.
摘要:
A display device that requires less manufacturing time is presented. The display device includes a light blocking member formed on a substrate, a semiconductor layer formed on the light blocking member, and a gate insulating layer formed on the semiconductor layer. Gate conductors, a first interlayer insulating layer, data conductors, a second interlayer insulating layer, and a pixel electrode are formed. A third interlayer insulating layer is deposited with an opening that extends to the pixel electrode. An organic light emitting member is formed in the opening, and a common electrode is formed. The light blocking member contains nickel and silicon oxide. The presence of nickel-and-silicon-oxide light blocking member below the semiconductor improves the crystallizing speed for the semiconductor layer, reducing the overall manufacturing time. Further, the light blocking member is disposed under the pixel electrodes to prevent light leakage, improving the contrast ratio and image quality.
摘要:
A method for fabricating a device isolation structure of a semiconductor device includes the steps of forming a pad oxide layer and a pad nitride layer over a semiconductor substrate including a cell region and a dummy region, etching a portion of the pad nitride layer, the pad oxide layer and the semiconductor substrate to form a trench, forming a sidewall oxide layer over the sidewalls of the trench; removing the sidewall oxide layer in the dummy region, forming a silicon nitride layer over the sidewalls of the sidewall oxide layer both in the cell region and in the dummy region, filling the trench with an insulating layer, polishing the insulating layer to expose the pad nitride layer, and removing the pad nitride layer.
摘要:
The present invention discloses a high-speed flat panel display with a long lifetime, wherein thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, have different resistance values than each other or have different geometric structures than each other. The flat panel display comprises a pixel array portion where a plurality of pixels are arranged, and a driving circuit portion for driving the pixels of the pixel array portion. The thin film transistors in the pixel array portion and the driving circuit portion have different resistance values in their gate regions or drain regions than each other, or have different geometric structures than each other. One of the thin film transistors in the pixel array portion and the thin film transistors in the driving circuit has zigzag shape in its gate region or drain region or has an offset region.
摘要:
The present invention relates to a flat panel display device comprising a polycrystalline silicon thin film transistor and provides a flat panel display device having improved characteristics by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a driving circuit portion and active channel regions of pixel portion. This may be achieved by having a different number of grain boundaries included in the polycrystalline silicon thin film formed in active channel regions of a switching thin film transistor and a driving thin film transistor formed in the pixel portion, and by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a thin film transistor for driving the pixel portion for each red, green and blue of the pixel portion. Further, this may be achieved by having a different number of grain boundaries included in polycrystalline silicon formed in active channel regions of an NMOS thin film transistor and a PMOS thin film transistor for forming CMOS transistor used in flat panel display device, thereby constructing a thin film transistor to obtain the improved characteristics for each transistor.
摘要:
Provided is a flat panel display in which no stripes appear on a screen, thereby improving image quality. The flat panel display has a matrix-type array of sub-pixels, each of which includes a driving thin film transistor, a first electrode driven by the driving thin film transistor, and a second electrode driving a light emission unit together with the first electrode. The driving thin film transistor includes semiconductor channels which are derived from a semiconductor layer. Heterogeneous straight lines are separated from each other on the semiconductor layer. An imaginary line connecting the semiconductor channels of one column is not parallel to the heterogeneous straight lines.
摘要:
A flat panel display capable of lowering an on-current of a driving thin film transistor (TFT), maintaining high switching properties of a switching TFT, maintaining uniform brightness using the driving TFT, and maintaining a life span of a light emitting device while the same voltages are applied to the switching TFT and the driving TFT without changing a size of an active layer. The flat panel display includes a light emitting device, a switching thin film transistor including a semiconductor active layer having a channel area for transferring a data signal to the light emitting device, and a driving thin film transistor including a semiconductor active layer having a channel area for driving the light emitting device. A predetermined amount of current flows through the light emitting device according to the data signal. The channel area of the switching thin film transistor has crystal grains with at least one of different sized or different shaped crystal grains than the crystal grains in the channel area of the driving thin film transistor.
摘要:
A solid titanium complex catalyst for polymerization and copolymerization of ethylene is prepared by the process comprising: (1) preparing a magnesium solution by reacting a halogenated magnesium compound with an alcohol; (2) reacting the magnesium solution with an ester compound having at least one hydroxyl group and a boron compound having at least one alkoxy group to produce a magnesium composition; and (3) producing a solid titanium catalyst through recrystallization by reacting the magnesium composition solution with a mixture of a titanium compound and a haloalkane compound; and optionally reacting the solid titanium catalyst with an additional titanium compound. The solid titanium complex catalyst for polymerization and copolymerization of ethylene according to present invention exhibits high catalytic activity and can be advantageously used in the polymerization and copolymerization of ethylene to produce polymers of high bulk density, narrow particle size distribution and small amount of fine particles.