SELECTIVE NETWORK MERGING
    61.
    发明申请
    SELECTIVE NETWORK MERGING 有权
    选择性网络合并

    公开(公告)号:US20110103258A1

    公开(公告)日:2011-05-05

    申请号:US12610044

    申请日:2009-10-30

    IPC分类号: H04L12/28

    摘要: Subsets of isolated communications networks are selectively merged without merging the entire isolated communications networks, and devices are imported across isolated communications networks without merging the isolated communications networks. The presently disclosed technology provides for improved scalability, performance, and security in logical networks spanning two or more physical communications networks.

    摘要翻译: 隔离通信网络的子集选择性地合并而不合并整个隔离的通信网络,并且设备在隔离的通信网络中导入,而不会合并隔离的通信网络。 目前公开的技术提供跨越两个或多个物理通信网络的逻辑网络中的改进的可扩展性,性能和安全性。

    Virtual and Logical Inter-Switch Links
    62.
    发明申请
    Virtual and Logical Inter-Switch Links 有权
    虚拟和逻辑交换机间链路

    公开(公告)号:US20110085558A1

    公开(公告)日:2011-04-14

    申请号:US12575608

    申请日:2009-10-08

    IPC分类号: H04L12/56

    摘要: A Layer 2 network switch is partitionable into a plurality of switch fabrics. The single-chassis switch is partitionable into a plurality of logical switches, each associated with one of the virtual fabrics. The logical switches behave as complete and self-contained switches. A logical switch fabric can span multiple single-chassis switch chassis. Logical switches are connected by inter-switch links that can be either dedicated single-chassis links or logical links. An extended inter-switch link can be used to transport traffic for one or more logical inter-switch links. Physical ports of the chassis are assigned to logical switches and are managed by the logical switch. Legacy switches that are not partitionable into logical switches can serve as transit switches between two logical switches.

    摘要翻译: 二层网络交换机可分割成多个交换结构。 单机箱交换机可分割成多个逻辑交换机,每个逻辑交换机与虚拟结构之一相关联。 逻辑交换机表现为完整和自包含的交换机。 逻辑交换矩阵可以跨多个单机箱交换机机箱。 逻辑交换机通过可以是专用单机箱链路或逻辑链路的交换机间链路连接。 可以使用扩展的交换机间链路来传输一个或多个逻辑交换机间链路的业务。 机箱的物理端口分配给逻辑交换机,由逻辑交换机管理。 不可分割到逻辑交换机的旧式交换机可以用作两个逻辑交换机之间的转接交换机。

    Display device with rapidly crystallizing light blocking layer and method of manuacturing the same
    64.
    发明授权
    Display device with rapidly crystallizing light blocking layer and method of manuacturing the same 有权
    具有快速结晶的阻光层的显示装置及其制造方法

    公开(公告)号:US07888679B2

    公开(公告)日:2011-02-15

    申请号:US11924403

    申请日:2007-10-25

    申请人: Ji-Yong Park

    发明人: Ji-Yong Park

    IPC分类号: H01L27/14 H01L29/18

    摘要: A display device that requires less manufacturing time is presented. The display device includes a light blocking member formed on a substrate, a semiconductor layer formed on the light blocking member, and a gate insulating layer formed on the semiconductor layer. Gate conductors, a first interlayer insulating layer, data conductors, a second interlayer insulating layer, and a pixel electrode are formed. A third interlayer insulating layer is deposited with an opening that extends to the pixel electrode. An organic light emitting member is formed in the opening, and a common electrode is formed. The light blocking member contains nickel and silicon oxide. The presence of nickel-and-silicon-oxide light blocking member below the semiconductor improves the crystallizing speed for the semiconductor layer, reducing the overall manufacturing time. Further, the light blocking member is disposed under the pixel electrodes to prevent light leakage, improving the contrast ratio and image quality.

    摘要翻译: 提出了一种需要较少制造时间的显示设备。 显示装置包括形成在基板上的遮光部件,形成在遮光部件上的半导体层,以及形成在半导体层上的栅极绝缘层。 形成栅极导体,第一层间绝缘层,数据导体,第二层间绝缘层和像素电极。 第三层间绝缘层沉积有延伸到像素电极的开口。 在开口部形成有机发光部件,形成公共电极。 遮光构件包含镍和氧化硅。 在半导体下方存在镍 - 硅氧化物阻光元件改善了半导体层的结晶速度,从而缩短了整个制造时间。 此外,遮光构件设置在像素电极下方以防止漏光,提高对比度和图像质量。

    Method for fabricating semiconductor device having trench isolation layer
    65.
    发明授权
    Method for fabricating semiconductor device having trench isolation layer 有权
    制造具有沟槽隔离层的半导体器件的方法

    公开(公告)号:US07655535B2

    公开(公告)日:2010-02-02

    申请号:US11647929

    申请日:2006-12-29

    IPC分类号: H01L21/76

    摘要: A method for fabricating a device isolation structure of a semiconductor device includes the steps of forming a pad oxide layer and a pad nitride layer over a semiconductor substrate including a cell region and a dummy region, etching a portion of the pad nitride layer, the pad oxide layer and the semiconductor substrate to form a trench, forming a sidewall oxide layer over the sidewalls of the trench; removing the sidewall oxide layer in the dummy region, forming a silicon nitride layer over the sidewalls of the sidewall oxide layer both in the cell region and in the dummy region, filling the trench with an insulating layer, polishing the insulating layer to expose the pad nitride layer, and removing the pad nitride layer.

    摘要翻译: 一种制造半导体器件的器件隔离结构的方法包括以下步骤:在包括单元区域和虚拟区域的半导体衬底上形成衬垫氧化物层和衬垫氮化物层,蚀刻衬垫氮化物层的一部分,衬垫 氧化物层和半导体衬底以形成沟槽,在沟槽的侧壁上形成侧壁氧化物层; 去除虚设区域中的侧壁氧化物层,在单元区域和虚拟区域中的侧壁氧化物层的侧壁上形成氮化硅层,用绝缘层填充沟槽,抛光绝缘层以露出衬垫 氮化物层,以及去除衬垫氮化物层。

    Flat panel display
    66.
    发明授权
    Flat panel display 有权
    平板显示器

    公开(公告)号:US07417252B2

    公开(公告)日:2008-08-26

    申请号:US10823713

    申请日:2004-04-14

    IPC分类号: H01L31/036 H01L29/04

    摘要: The present invention discloses a high-speed flat panel display with a long lifetime, wherein thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, have different resistance values than each other or have different geometric structures than each other. The flat panel display comprises a pixel array portion where a plurality of pixels are arranged, and a driving circuit portion for driving the pixels of the pixel array portion. The thin film transistors in the pixel array portion and the driving circuit portion have different resistance values in their gate regions or drain regions than each other, or have different geometric structures than each other. One of the thin film transistors in the pixel array portion and the thin film transistors in the driving circuit has zigzag shape in its gate region or drain region or has an offset region.

    摘要翻译: 本发明公开了一种寿命长的高速平板显示器,其中排列有多个像素的像素阵列部分中的薄膜晶体管和用于驱动像素阵列部分的像素的驱动电路部分具有不同的 电阻值彼此相差或具有彼此不同的几何结构。 平板显示器包括其中布置有多个像素的像素阵列部分和用于驱动像素阵列部分的像素的驱动电路部分。 像素阵列部分和驱动电路部分中的薄膜晶体管在其栅极区域或漏极区域中具有彼此不同的电阻值,或者具有彼此不同的几何结构。 像素阵列部分中的薄膜晶体管之一和驱动电路中的薄膜晶体管在其栅极区域或漏极区域中具有锯齿形状或具有偏移区域。

    FLAT PANEL DISPLAY DEVICE WITH POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR
    67.
    发明申请
    FLAT PANEL DISPLAY DEVICE WITH POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR 有权
    具有多晶硅薄膜晶体管的平板显示器件

    公开(公告)号:US20080067514A1

    公开(公告)日:2008-03-20

    申请号:US11942460

    申请日:2007-11-19

    IPC分类号: H01L29/04

    摘要: The present invention relates to a flat panel display device comprising a polycrystalline silicon thin film transistor and provides a flat panel display device having improved characteristics by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a driving circuit portion and active channel regions of pixel portion. This may be achieved by having a different number of grain boundaries included in the polycrystalline silicon thin film formed in active channel regions of a switching thin film transistor and a driving thin film transistor formed in the pixel portion, and by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a thin film transistor for driving the pixel portion for each red, green and blue of the pixel portion. Further, this may be achieved by having a different number of grain boundaries included in polycrystalline silicon formed in active channel regions of an NMOS thin film transistor and a PMOS thin film transistor for forming CMOS transistor used in flat panel display device, thereby constructing a thin film transistor to obtain the improved characteristics for each transistor.

    摘要翻译: 本发明涉及一种包括多晶硅薄膜晶体管的平板显示装置,通过在驱动电路的有源沟道区域中形成的多晶硅薄膜中包含不同数量的晶界,提供具有改进特性的平板显示装置 像素部分和有源沟道区域。 这可以通过在形成在像素部分中的开关薄膜晶体管和驱动薄膜晶体管的有源沟道区域中形成的多晶硅薄膜中包含不同数量的晶界,并且通过具有不同数量的晶粒来实现 包括在形成在用于驱动像素部分的每个红,绿和蓝的像素部分的薄膜晶体管的有源沟道区域中的多晶硅薄膜中的边界。 此外,这可以通过在NMOS薄膜晶体管的有源沟道区域中形成的多晶硅中包含不同数量的晶界和用于形成用于平板显示器件的CMOS晶体管的PMOS薄膜晶体管来实现,从而构造薄的 以获得每个晶体管的改进特性。

    Flat panel display comprising semiconductor layer with heterogeous lines
    68.
    发明授权
    Flat panel display comprising semiconductor layer with heterogeous lines 有权
    平板显示器包括具有异质线的半导体层

    公开(公告)号:US07196747B2

    公开(公告)日:2007-03-27

    申请号:US10754546

    申请日:2004-01-12

    IPC分类号: G02F1/136

    摘要: Provided is a flat panel display in which no stripes appear on a screen, thereby improving image quality. The flat panel display has a matrix-type array of sub-pixels, each of which includes a driving thin film transistor, a first electrode driven by the driving thin film transistor, and a second electrode driving a light emission unit together with the first electrode. The driving thin film transistor includes semiconductor channels which are derived from a semiconductor layer. Heterogeneous straight lines are separated from each other on the semiconductor layer. An imaginary line connecting the semiconductor channels of one column is not parallel to the heterogeneous straight lines.

    摘要翻译: 提供一种平板显示器,其中屏幕上不出现条纹,从而提高图像质量。 平板显示器具有矩阵型子像素阵列,每个子像素包括驱动薄膜晶体管,由驱动薄膜晶体管驱动的第一电极和与第一电极一起驱动发光单元的第二电极 。 驱动薄膜晶体管包括衍生自半导体层的半导体沟道。 不均匀的直线在半导体层上彼此分离。 连接一列的半导体通道的假想线不平行于异质直线。

    Flat panel display with thin film transistor
    69.
    发明申请
    Flat panel display with thin film transistor 有权
    带薄膜晶体管的平板显示器

    公开(公告)号:US20050087744A1

    公开(公告)日:2005-04-28

    申请号:US10989643

    申请日:2004-11-17

    摘要: A flat panel display capable of lowering an on-current of a driving thin film transistor (TFT), maintaining high switching properties of a switching TFT, maintaining uniform brightness using the driving TFT, and maintaining a life span of a light emitting device while the same voltages are applied to the switching TFT and the driving TFT without changing a size of an active layer. The flat panel display includes a light emitting device, a switching thin film transistor including a semiconductor active layer having a channel area for transferring a data signal to the light emitting device, and a driving thin film transistor including a semiconductor active layer having a channel area for driving the light emitting device. A predetermined amount of current flows through the light emitting device according to the data signal. The channel area of the switching thin film transistor has crystal grains with at least one of different sized or different shaped crystal grains than the crystal grains in the channel area of the driving thin film transistor.

    摘要翻译: 一种平板显示器,其能够降低驱动薄膜晶体管(TFT)的导通电流,保持开关TFT的高开关特性,使用驱动TFT保持均匀的亮度,并且保持发光器件的使用寿命,同时 在不改变有源层的尺寸的情况下,向开关TFT和驱动TFT施加相同的电压。 平板显示器包括发光器件,包括具有用于将数据信号传输到发光器件的沟道区域的半导体有源层的开关薄膜晶体管,以及包括具有沟道面积的半导体有源层的驱动薄膜晶体管 用于驱动发光装置。 预定量的电流根据数据信号流过发光器件。 开关薄膜晶体管的沟道区域具有与驱动薄膜晶体管的沟道区域中的晶粒不同尺寸或不同形状的晶粒中的至少一种的晶粒。

    Catalyst for polymerization and copolymerization of ethylene
    70.
    发明授权
    Catalyst for polymerization and copolymerization of ethylene 有权
    用于乙烯聚合和共聚的催化剂

    公开(公告)号:US06881696B2

    公开(公告)日:2005-04-19

    申请号:US10399193

    申请日:2002-06-20

    摘要: A solid titanium complex catalyst for polymerization and copolymerization of ethylene is prepared by the process comprising: (1) preparing a magnesium solution by reacting a halogenated magnesium compound with an alcohol; (2) reacting the magnesium solution with an ester compound having at least one hydroxyl group and a boron compound having at least one alkoxy group to produce a magnesium composition; and (3) producing a solid titanium catalyst through recrystallization by reacting the magnesium composition solution with a mixture of a titanium compound and a haloalkane compound; and optionally reacting the solid titanium catalyst with an additional titanium compound. The solid titanium complex catalyst for polymerization and copolymerization of ethylene according to present invention exhibits high catalytic activity and can be advantageously used in the polymerization and copolymerization of ethylene to produce polymers of high bulk density, narrow particle size distribution and small amount of fine particles.

    摘要翻译: 一种用于乙烯聚合和共聚的固体钛络合物催化剂是通过以下方法制备的:(1)通过使卤代镁化合物与醇反应制备镁溶液; (2)使镁溶液与具有至少一个羟基的酯化合物和具有至少一个烷氧基的硼化合物反应以制备镁组合物; 和(3)通过使镁组合物溶液与钛化合物和卤代烷烃化合物的混合物反应,通过重结晶制备固体钛催化剂; 并且任选地使固体钛催化剂与另外的钛化合物反应。 用于本发明的乙烯聚合和共聚的固体钛络合物催化剂显示出高的催化活性,并且可以有利地用于乙烯的聚合和共聚合以产生高堆积密度,窄粒度分布和少量细颗粒的聚合物。