公开(公告)号：US20090159870A1

公开(公告)日：2009-06-25

申请号：US11961478

申请日：2007-12-20

Applicant: Hung-Cheng Lin ,  Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Hung-Cheng Lin ,  Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L33/00

CPC classification number: H01L33/10 ,  H01L33/20

Abstract: The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.

Abstract translation: 本发明公开了一种发光二极管（LED）元件及其制造方法，其可以提高LED的光提取效率，其中蚀刻基板以获得具有倾斜的自然晶体面的池，并且LED外延结构选择性地 形成在盆地内。 由此，得到具有多个倾斜的LED元件。 通过倾斜，全内反射的概率降低，LED的光提取效率得到提升。

公开(公告)号：US07456423B2

公开(公告)日：2008-11-25

申请号：US11500935

申请日：2006-08-09

Applicant: Wei-Sheng Liu ,  Jen-Inn Chyi

Inventor： Wei-Sheng Liu ,  Jen-Inn Chyi

IPC: H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: H01L29/127 ,  B82Y10/00 ,  H01L29/20 ,  H01L33/06 ,  H01L33/32

Abstract: A quantum dot optoelectronic device has an overgrown layer containing antimony (Sb). The optical characteristics and thermal stability of the optoelectronic device are thus greatly enhanced due to the improved crystal quality and carrier confinement of the quantum dot structure.

Abstract translation: 量子点光电子器件具有含有锑（Sb）的杂交层。 由于量子点结构的晶体质量和载流子限制，光电子器件的光学特性和热稳定性因此大大提高。

公开(公告)号：US20080274573A1

公开(公告)日：2008-11-06

申请号：US11984335

申请日：2007-11-16

Applicant: Jin-Wei Shi ,  Jinn-Kong Sheu ,  Mao-Jen Wu ,  Chun-Kai Wang ,  C.-H. Chen ,  Jen-Inn Chyi

Inventor： Jin-Wei Shi ,  Jinn-Kong Sheu ,  Mao-Jen Wu ,  Chun-Kai Wang ,  C.-H. Chen ,  Jen-Inn Chyi

IPC: H01L33/00

CPC classification number: H01L27/153 ,  H01L33/025 ,  H01L33/32

Abstract: Green light emitting diodes (LED) of gallium arsenide (GaAs) are series-connected. The series connection has a small transmission attenuation and a wide bandwidth. The GaAs LED has a big forward bias and so neither extra driving current nor complex resonant-cavity epitaxy layer is needed. Hence, the present invention has a high velocity, a high efficiency and a high power while an uneven current distribution is avoided.

Abstract translation: 砷化镓（GaAs）的绿色发光二极管（LED）串联连接。 串联连接具有较小的传输衰减和宽带宽。 GaAs LED具有很大的正向偏压，因此不需要额外的驱动电流和复杂的谐振腔外延层。 因此，本发明具有高速度，高效率和高功率，同时避免了不均匀的电流分布。

公开(公告)号：US20080173874A1

公开(公告)日：2008-07-24

申请号：US11808271

申请日：2007-06-07

Applicant: Sheng-Yu Wang ,  Jen-Inn Chyi ,  Shu-Han Chen

Inventor： Sheng-Yu Wang ,  Jen-Inn Chyi ,  Shu-Han Chen

IPC: H01L29/15

CPC classification number: H01L29/7371 ,  H01L29/201 ,  H01L29/205

Abstract: A hetero junction bipolar transistor (HBT) has a (In)(Al)GaAsSb/InGaAs base-collector structure. A discontinuous base-collector conduction band forms a built-in electric field to infuse electrons into a collector structure effectively, while a discontinuous base-collector valence band prevents holes from spreading into the collector structure at the same time. Thus, a current density is increased. In addition, the small offset voltage of the base-emitter and base-collector junctions reduce a power consumption.

Abstract translation: 异质结双极晶体管（HBT）具有（In）（Al）GaAsSb / InGaAs基极集电器结构。 不连续的基极集电极导带形成内置的电场，以有效地将电子注入集电极结构，而不连续的基极集电极价带同时防止空穴扩散到集电极结构。 因此，电流密度增加。 此外，基极 - 基极 - 集电极结的小偏移电压降低功耗。

公开(公告)号：US20070295951A1

公开(公告)日：2007-12-27

申请号：US11474878

申请日：2006-06-26

Applicant: Jen-Inn Chyi ,  Chia-Ming Lee ,  Jui-Cheng Chang ,  Tsung-Liang Chen ,  Shih-Ling Chen

Inventor： Jen-Inn Chyi ,  Chia-Ming Lee ,  Jui-Cheng Chang ,  Tsung-Liang Chen ,  Shih-Ling Chen

IPC: H01L31/00

CPC classification number: H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L2933/0083

Abstract: A light-emitting diode includes an optical layer formed in an array of substantially equidistant light extracting spots integrated to its multi-layer structure. The array of light extracting spots includes a distribution of juxtaposed hexagon patterns. The layer thickness of the light extracting spots is less than 800 Å, and preferably around 500 Å.

Abstract translation: 发光二极管包括形成为与其多层结构集成的基本上等距的光提取点的阵列的光学层。 光提取点的阵列包括并列六边形图案的分布。 光提取点的层厚小于800，优选为约500。

公开(公告)号：US20070015300A1

公开(公告)日：2007-01-18

申请号：US11181756

申请日：2005-07-15

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: H01L33/62 ,  H01L24/05 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/81192 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/12041 ,  H05K1/189 ,  H05K3/328 ,  H05K3/4007 ,  H05K2201/0367 ,  H05K2201/10106 ,  H01L2924/00

Abstract: The present invention discloses a method for fabricating a light-emitting device, wherein a thermosonic bonding process is utilized to join the contacts on a substrate with bond pads on the light-emitting element. Thereby, the deterioration of the substrate can be reduced, and the yield can also be promoted. Further, in the present invention, it is unnecessary to redesign the element specially, and thus, the cost can be lowered.

Abstract translation: 本发明公开了一种用于制造发光器件的方法，其中使用热键合工艺将基片上的触点与发光元件上的接合焊盘接合。 由此，能够降低基板的劣化，能够提高成品率。 此外，在本发明中，不需要特别重新设计元件，因此可以降低成本。

公开(公告)号：US20070012930A1

公开(公告)日：2007-01-18

申请号：US11524869

申请日：2006-09-21

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L33/00 ,  H01L31/12 ,  H01L27/15 ,  H01L29/26

CPC classification number: H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure. One electrode pad is formed through the opening of the reflector layer and the passivation layer to connect with the multi-layer structure

Abstract translation: 发光装置包括多层结构，其包括响应于电信号的施加而被配置为照射光的一个或多个有源层，布置在多层堆叠的最外表面上的透明钝化层，反射层 铺设在钝化层上，以及与多层结构耦合的多个电极焊盘。 在发光器件的制造工艺中，对反射层和钝化层进行构图以形成暴露多层结构区域的至少一个开口。 一个电极焊盘通过反射层的开口和钝化层形成，以与多层结构连接

公开(公告)号：US20060121642A1

公开(公告)日：2006-06-08

申请号：US11339342

申请日：2006-01-25

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: H01L33/508 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A light-emitting device includes a multi-layer structure configured to emit a first light radiation, and a cap layer covering a surface area of the multi-layer structure while leaving exposed electrode areas defined thereon, wherein the cap layer is made of a material capable of emitting at least one second light radiation when stimulated by the first light radiation. The cap layer, being made of a material blend incorporating a passivation material and a luminescent material compound, is coated on the multi-layer structure.

Abstract translation: 发光器件包括被配置为发射第一光辐射的多层结构，以及覆盖多层结构的表面区域同时留下限定在其上的暴露的电极区域的覆盖层，其中，盖层由材料制成 能够在被第一光辐射刺激时发射至少一个第二光辐射。 覆盖层由包含钝化材料和发光材料化合物的材料混合物制成，涂覆在多层结构上。