公开(公告)号：US20110297992A1

公开(公告)日：2011-12-08

申请号：US13213988

申请日：2011-08-19

申请人： Pun Jae CHOI ,  Ki Yeol Park ,  Sang Bum LEE ,  Seon Young MYOUNG ,  Myong Soo CHO

发明人： Pun Jae CHOI ,  Ki Yeol Park ,  Sang Bum LEE ,  Seon Young MYOUNG ,  Myong Soo CHO

IPC分类号： H01L33/60

CPC分类号： H01L33/382 ,  H01L33/20

摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

公开(公告)号：US20110233623A1

公开(公告)日：2011-09-29

申请号：US12965649

申请日：2010-12-10

申请人： Ki Yeol PARK ,  Woo Chul Jeon ,  Young Hwan Park ,  Jung Hee Lee

发明人： Ki Yeol PARK ,  Woo Chul Jeon ,  Young Hwan Park ,  Jung Hee Lee

IPC分类号： H01L29/778 ,  H01L21/336

CPC分类号： H01L29/7786 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/365 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/78681

摘要： There is provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer having a receiving groove, a protrusion part, a first carrier injection layer, at least two insulating patterns, and a second carrier injection layer provided on the base substrate, the insulating patterns being disposed to traverse the first carrier injection layer and the second carrier injection layer being spaced apart from the first carrier injection layer and disposed on a lower portion of the protrusion part; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part recessed into the receiving groove, wherein a lowest portion of the receiving groove contacts an uppermost layer of the first carrier injection layer or is disposed above the uppermost layer thereof, and an insulating pattern, disposed at an innermost portion of the semiconductor layer among the insulating patterns, traverses the first carrier injection layer and is disposed at the outside of both sides of the receiving groove in a thickness direction thereof.

摘要翻译： 提供了一种半导体器件及其制造方法。 半导体器件包括：基底; 具有接收槽的半导体层，突起部分，第一载流子注入层，至少两个绝缘图案和设置在基底基板上的第二载流子注入层，绝缘图案设置成穿过第一载流子注入层和 第二载体注入层与第一载体注入层间隔开并设置在突出部分的下部; 源电极和漏电极，设置成在半导体层上彼此间隔开; 以及与源电极和漏电极绝缘的栅电极，并且具有凹入到所述接收槽中的凹部，其中所述接收槽的最下部接触所述第一载流子注入层的最上层，或者设置在所述第一载流子注入层的最上层 并且绝缘图案设置在绝缘图案中的半导体层的最内部，穿过第一载流子注入层，并且沿着其厚度方向设置在容纳槽的两侧的外侧。

公开(公告)号：US20110233613A1

公开(公告)日：2011-09-29

申请号：US12965640

申请日：2010-12-10

申请人： Woo Chul JEON ,  Ki Yeol Park ,  Young Hwan Park ,  Jung Hee Lee

发明人： Woo Chul JEON ,  Ki Yeol Park ,  Young Hwan Park ,  Jung Hee Lee

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/66462

摘要： There are provided a semiconductor device and a method for manufacturing the same. The semiconductor device according to the present invention includes a base substrate; a semiconductor layer that includes a receiving groove and a protrusion part formed on the base substrate, a first carrier injection layer and at least two insulating layers formed to traverse the first carrier injection layer formed in the semiconductor layer, and a second carrier injection layer spaced apart from the first carrier injection layer formed on the protrusion part; a source electrode and a drain electrode that are disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode that is insulated from the source electrode and the drain electrode and has a recess part recessed into the receiving groove, wherein the lowest end portion of the receiving groove contacts the uppermost layer of the first carrier injection layer and the insulating pattern disposed at the innermost side of the semiconductor layer among the insulating patterns traverses the entire layer forming the first carrier injection layer and is disposed at the outer side of both side end portions in the thickness direction of the receiving groove.

摘要翻译： 提供了一种半导体器件及其制造方法。 根据本发明的半导体器件包括：基底; 半导体层，其包括形成在所述基底基板上的接收槽和突出部，第一载流子注入层和形成为穿过形成在所述半导体层中的所述第一载流子注入层形成的至少两个绝缘层，以及间隔开的第二载流子注入层 除了形成在突出部上的第一载流子注入层之外; 源电极和漏电极，其设置成在半导体层上彼此间隔开; 以及与源电极和漏电极绝缘并且具有凹入到接收槽中的凹部的栅电极，其中接收槽的最低端部接触第一载流子注入层的最上层，并且布置的绝缘图案 在绝缘图案中的半导体层的最内侧穿过形成第一载流子注入层的整个层，并且设置在接收槽的厚度方向上的两个侧端部的外侧。

公开(公告)号：US20110057233A1

公开(公告)日：2011-03-10

申请号：US12591409

申请日：2009-11-18

申请人： Ki Yeol Park ,  Jung Hee Lee ,  Ki Won Kim ,  Young Hwan Park ,  Woo Chul Jeon

发明人： Ki Yeol Park ,  Jung Hee Lee ,  Ki Won Kim ,  Young Hwan Park ,  Woo Chul Jeon

IPC分类号： H01L29/778 ,  H01L29/772 ,  H01L21/335

CPC分类号： H01L29/7786 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7788

摘要： The present invention provides a semiconductor component. The semiconductor component in accordance with the present invention includes a lower layer including a low resistance layer and a high resistance layer with higher resistivity than the low resistance layer while surrounding a lateral surface of the low resistance layer; a source electrode disposed on a front surface of the high resistance layer; a gate structure disposed on a front surface of the low resistance layer; a drain structure disposed on a rear surface of the low resistance layer; and a base substrate surrounding the drain structure on a rear surface of the high resistance layer.

摘要翻译： 本发明提供一种半导体元件。 根据本发明的半导体部件包括具有低电阻层和比低电阻层高的电阻率的低电阻层的下层，同时围绕低电阻层的侧表面; 设置在所述高电阻层的前表面上的源电极; 栅极结构，其设置在所述低电阻层的前表面上; 排列结构，设置在所述低电阻层的后表面上; 以及在高电阻层的后表面上包围漏极结构的基底基板。

公开(公告)号：US07795054B2

公开(公告)日：2010-09-14

申请号：US11987712

申请日：2007-12-04

申请人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

发明人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

IPC分类号： H01L21/00 ,  H01L21/50 ,  H01L21/48 ,  H01L21/44

CPC分类号： H01L33/0079

摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.

摘要翻译： 一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层 成长 将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来 金属接合层与接合界面接触。

公开(公告)号：US20100193828A1

公开(公告)日：2010-08-05

申请号：US12756824

申请日：2010-04-08

申请人： Pun Jae CHOI ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

发明人： Pun Jae CHOI ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

IPC分类号： H01L33/62

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。