摘要:
A solid-state image pickup device for preventing crosstalk between adjacent pixels by providing an overflow barrier at the deep potion of a substrate. A partial P type region is provided at the predetermined position of a lower layer region of the vertical transfer register and a channel stop region. This P type region adjusts potential in the lower layer region of the vertical transfer register and the channel stop region. Accordingly, since the potential in the lower layer region of the vertical transfer register and the channel stop region at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily.
摘要:
An object of the present invention is to provide an information processing apparatus which is provided with a fingerprint verification function with a high security and a high operability. When a fingerprint is inputted from a fingerprint reading surface of a display/fingerprint reading unit, a fingerprint data sensing control unit reads fingerprint data and coordinate data, and stores the data into a storage unit. The fingerprint data is verified against fingerprint data previously registered and stored in a storage unit, to determine whether or not there is a matching fingerprint. In an information processing apparatus, a fingerprint verification function is thus implemented. Further, based on the coordinate data related to fingerprint input, the operation of the information processing apparatus is controlled. Accordingly, with such simple control as coordinate designation by touching the fingerprint reading surface with a finger at the time of fingerprint verification, the operation of the information processing apparatus can be controlled.
摘要:
To control the positional relation between semiconductor regions formed on an epitaxial layer after the epitaxial layer is formed with high accuracy in a method for manufacturing semiconductor devices in which a plurality of semiconductor regions are formed selectively on the epitaxial layer on the semiconductor surface having a semiconductor region formed selectively on the semiconductor surface, a first wafer alignment mark is formed on the semiconductor substrate surface to be served as the under layer of an epitaxial layer which will be formed subsequently, and the wafer alignment mark is used as an index for wafer alignment for forming selectively a semiconductor region, and a second wafer alignment mark is formed on the surface of the epitaxial layer after the epitaxial layer is formed, and the second wafer alignment mark is used as an index for wafer alignment for forming respective semiconductor regions on the epitaxial layer.
摘要:
A CCD solid state imaging device (21), which is comprised of an imaging section (24) formed of a plurality of light receiving portions (22), each serving as a pixel, and of a vertical transfer register (23) corresponding to each column of light receiving portions, first and second storage sections (26A) and (26B) capable of storing a charge from the imaging section (24), a horizontal transfer register (27) and a smear drain region (28), is employed, wherein after a first smear component charge (I) in the vertical transfer register (23) is swept away to the smear drain region , the vertical transfer register is operated at a high speed under such a state that a signal charge of the light receiving portion (22) is not read to the vertical transfer register (23) to store a second smear component charge (II) generated during the high speed transfer in the first storage section (26A), then the signal charge of the light receiving portion (22) is read to the vertical transfer register (23), the same is transferred at a high speed, an added charge of the second smear component charge (II) generated during the high speed transfer and the signal charge is stored in the first storage section (26A), and at the same time the second smear component charge (II) in the first storage section (26A) is transferred to the second storage section (26B) to be stored therein; and a difference between a signal of the second smear component charge (II) and a signal of the added charge is outputted in an outside.
摘要:
A solid-state imaging apparatus in which the dynamic range can be increased and its magnification factor can be made variable without lowering the sensitivity. A plurality of photosensors are formed on the obverse surface of a semiconductor substrate. A vertical register and a read-out channel are disposed at one side of each of the photosensors. A read-out electrode of the read-out channel and a transfer electrode of the vertical register are formed of different conductive layers. A reading method used in the solid-state imaging apparatus is also included.
摘要:
A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).
摘要:
A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is not formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).
摘要:
A wire clamper for wire bonding apparatuses including a pair of clamping arms provided with clamping elements at the terminal ends of the clamping arms that are opened and closed by the electrostrictive strain effect or magnetstrictive strain effect of a piezoelectric element, and a temperature compensation component is connected to the piezoelectric element so as to correct the fluctuation in the clamping load in the clamping elements that are caused by temperature changes in the clamper.
摘要:
A display system for a compact electronic apparatus uses a multi-level display means with a plurality of display lines. When the result of a computation is not displayed, all these display lines are available for displaying a computation expression. When the result of a computation is desired, that portion of the expression on the line on which the result of the computation is displayed is cleared. As a result, the user may be able to see the entire expression at a single glance and distinction between the expression and the result of the computation is clear so as to prevent misrecognition by the user.
摘要:
Disclosed herein is a photographing device that includes a number of light-receiving elements, a number of vertical transfer registers, a first drive-voltage applying electrode, and a second drive-voltage applying electrode. The light-receiving elements are arranged in a horizontal direction and a vertical direction. The vertical transfer registers transfers the electric charges accumulated in the light-receiving elements in the vertical direction. The first drive-voltage applying electrode is arranged parallel to the vertical transfer registers, for applying a drive voltage to a specific one of the vertical transfer registers. The second drive-voltage applying electrode is arranged perpendicular to the vertical transfer registers, for applying a second drive voltage to the vertical transfer registers at the same time. The electric charges accumulated in the light-receiving elements are transferred to the vertical transfer registers, due to the voltage output from the first drive-voltage applying electrode or the second drive-voltage applying electrode, or the voltages output from both electrodes. Therefore, the light-receiving elements can have different sensitivities, and the photographing device can photograph dynamic scenes in a broad dynamic range.