Upright piano for constant key-touch regardless of manipulation of soft
pedal
    61.
    发明授权
    Upright piano for constant key-touch regardless of manipulation of soft pedal 失效
    直立钢琴用于恒定的键触式,无论操纵软踏板

    公开(公告)号:US5287787A

    公开(公告)日:1994-02-22

    申请号:US925793

    申请日:1992-08-04

    Applicant: Satoshi Inoue

    Inventor: Satoshi Inoue

    CPC classification number: G10C3/161

    Abstract: A jack on a whippen incorporated in an upright piano drives a hammer assembly to rotate toward musical strings for producing sound, and a soft pedal causes the hammer assembly to become closer to the musical strings, wherein the upright piano comprises an adjusting mechanism operative to move the whippen upon manipulation of the soft pedal for eliminating gap between the jack and the butt as well as modifying rotating distance of the whippen, and a driving link assembly coupled between an associated key and a damper mechanism so that the whippen moved by the adjusting mechanism has no influence of action of the damper mechanism, thereby keeping key-touch ordinary under the manipulation of the soft pedal.

    Abstract translation: 竖立钢琴上的一个吊杆上的一个插孔驱动一个琴槌组件朝向琴弦转动以产生声音,而一个柔软的踏板使琴槌组件变得更靠近琴弦,其中直立钢琴包括一个调节机构, 在操纵软踏板以消除千斤顶和对接座之间的间隙以及修改旋翼的旋转距离的摇动,以及耦合在相关键和减震机构之间的驱动连杆组件,使得由调节机构移动的摇动 没有阻尼器机构的作用的影响,从而使键盘普通在软踏板的操纵下。

    Electrophotographic toner composition
    62.
    发明授权
    Electrophotographic toner composition 失效
    电子照相色调剂组成

    公开(公告)号:US5192637A

    公开(公告)日:1993-03-09

    申请号:US710617

    申请日:1991-06-05

    CPC classification number: G03G9/09716

    Abstract: An electrophotographic toner composition comprising a toner particle and an additive is disclosed, the toner particle comprising at least a binder resin and a colorant, and the additive being an amorphous titania fine particle subjected to a surface treatment using a coupling agent.

    Abstract translation: 公开了包含调色剂颗粒和添加剂的电子照相调色剂组合物,所述调色剂颗粒至少包含粘合剂树脂和着色剂,所述添加剂是使用偶联剂进行表面处理的无定形二氧化钛细颗粒。

    Semiconductor memory device and its fabricating method
    63.
    发明授权
    Semiconductor memory device and its fabricating method 失效
    半导体存储器件及其制造方法

    公开(公告)号:US5144579A

    公开(公告)日:1992-09-01

    申请号:US578608

    申请日:1990-09-07

    CPC classification number: H01L27/10852 H01L27/10808

    Abstract: A semiconductor memory device wherein at least one of a storage node contact hole and a bit line contact hole includes a first contact hole made in a first inter-layer insulating film formed over a gate electrode and a second contact hole made in a second inter-layer insulating film formed over an electrically conductive material embedded up to a level higher than the gate electrode in the first contact hole which is contacted with the electrically conductive material, the conductive material being exposed by etching a part of the second inter-layer insulating film, whereby the size of the memory device can be made small and the reliability can be improved. Further, a capacitor is formed in a layer higher than a bit line thereby to facilitate the processing of a storage node electrode to increase the capacitor area and to improve the reliability since it is unnecessary to carry out patterning a plate electrode within a cell array. With the above construction, a short-circuiting between the embedded layers is removed and a good quality of the second inter-layer insulating film is formed.

    Abstract translation: 一种半导体存储器件,其中存储节点接触孔和位线接触孔中的至少一个包括在形成在栅电极上的第一层间绝缘膜中形成的第一接触孔和在第二互连孔中形成的第二接触孔, 在导电材料上形成的层间绝缘膜,该导电材料在与导电材料接触的第一接触孔中嵌入高于栅电极的电平,通过蚀刻第二层间绝缘膜的一部分而露出导电材料 从而可以使存储器件的尺寸小并且可以提高可靠性。 此外,在高于位线的层中形成电容器,从而不需要对单元阵列内的平板电极进行图案化,便于存储节点电极的处理以增加电容器面积并提高可靠性。 利用上述结构,去除了嵌入层之间的短路,形成了第二层间绝缘膜的良好质量。

    Waste disposal method and apparatus
    64.
    发明授权
    Waste disposal method and apparatus 失效
    废物处理方法和装置

    公开(公告)号:US5081940A

    公开(公告)日:1992-01-21

    申请号:US610212

    申请日:1990-11-07

    Abstract: Waste is combusted by an incinerator and becomes an ash. The ash is transferred to a melting furnace to be melt therein. The ash contains unburned carbon and the melting at the melting furnace is influenced by an amount of the unburned carbon. The amount of unburned carbon largely depends on a gas temperature at an waste inlet of the incinerator and an waste burn-out point in the incinerator. The waste disposal method, using the incinerator and the melting furnace, comprises the steps of detecting the gas temperature at the waste inlet of the incinerator, detecting the burn-out point of waste combustion in the incinerator, controlling a waste transfer speed in the incinerator and controlling a flow rate of air fed into the incinerator such that the detected temperature and burn-out point remain within repsective predetermined ranges, which in turn brings the amount of the unburned carbon remaining in the ash to a desired value, whereby the melting at the melting furnace is controlled to a desired melting.

    Method of stable combustion for a fluidized bed incinerator
    65.
    发明授权
    Method of stable combustion for a fluidized bed incinerator 失效
    流化床焚烧炉稳定燃烧方法

    公开(公告)号:US4753180A

    公开(公告)日:1988-06-28

    申请号:US1062

    申请日:1987-01-07

    CPC classification number: F23G5/30 F23C10/18

    Abstract: A method of stable combustion in a fluidized bed incinerator for burning and decomposing refuse such as municipal wastes while fluidizing them is disclosed. A number of air diffuser tubes are provided inside the incinerator body for fluidizing the refuse and the fluidizing medium. The fluidizing air from the air diffuser tubes is supplied at high speed or low speed from each of the tubes respectively. By alternately forming more and less fluidized areas inside the fluidized bed, the refuse is stably burned. Because of the stable combustion of the refuse, the combustion air ratio can be reduced and the combustion chamber temperature inside the incinerator can be maintained at a high level.

    Abstract translation: 公开了一种在流化床焚烧炉中稳定燃烧的方法,用于在使其流化时燃烧和分解垃圾,例如城市废物。 焚烧炉主体内设有多个空气扩散管,用于使垃圾和流化介质流化。 来自空气扩散管的流化空气分别以高速或低速从每个管供应。 通过在流化床内部交替地形成流化区域,垃圾被稳定地燃烧。 由于垃圾的稳定燃烧,可以降低燃烧空气比,并且能够将焚烧炉内的燃烧室温度保持在高水平。

    Method of catalystless denitrification for fluidized bed incinerators
    66.
    发明授权
    Method of catalystless denitrification for fluidized bed incinerators 失效
    流化床焚烧炉无催化脱氮方法

    公开(公告)号:US4708067A

    公开(公告)日:1987-11-24

    申请号:US942135

    申请日:1986-12-16

    CPC classification number: F23G5/30 F23J7/00

    Abstract: A method of catalystless denitrification for a fluidized bed incinerator to remove NOx generated in burning refuse such as municipal wastes as the refuse is fluidized in a fluidized bed incinerator is disclosed. The refuse is fluidized together with fluidizing medium such as sand along with primary air, and is thermally decomposed and/or burned. The combustible gases generated by pyrolysis are burned with the secondary air blown into the incinerator in a lattice work arrangement. A denitrification agent is mixed in a part of the secondary air, and the NOx present in the combustion gas is removed without using catalysts.

    Abstract translation: 公开了一种用于流化床焚化炉的无催化剂脱氮方法,用于在流化床焚化炉中流化废气时除去诸如城市垃圾的燃烧垃圾中产生的NOx。 垃圾与流化介质如沙子一起与一次空气一起流化,并被热分解和/或燃烧。 通过热解产生的可燃气体以二次空气燃烧,并以格子工作方式吹入焚化炉。 在二次空气的一部分中混合脱氮剂,不使用催化剂除去存在于燃烧气体中的NOx。

    Manufacturing device and manufacturing method for organic EL element
    68.
    发明授权
    Manufacturing device and manufacturing method for organic EL element 有权
    有机EL元件的制造装置及制造方法

    公开(公告)号:US09231210B2

    公开(公告)日:2016-01-05

    申请号:US13696585

    申请日:2011-05-02

    Abstract: A vapor deposition source (60), a plurality of limiting plates (81) and a vapor deposition mask (70) are disposed in this order. A substrate spaced apart from the vapor deposition mask at a fixed interval is moved relative to the vapor deposition mask. Vapor deposition particles (91) discharged from vapor deposition source openings (61) of the vapor deposition source pass through between neighboring limiting plates, pass through mask openings (71) formed in the vapor deposition mask, and adhere to the substrate, whereby coating films (90) are formed. The limiting plates limit the incidence angle of the vapor deposition particles that enter the mask openings, as viewed in the relative movement direction of the substrate. In this way, an organic EL element can be formed on a large-sized substrate without increasing the pixel pitch or reducing the aperture ratio.

    Abstract translation: 蒸镀源(60),多个限制板(81)和气相沉积掩模(70)按此顺序设置。 以固定间隔与蒸镀掩模间隔开的基板相对于蒸镀掩模移动。 从气相沉积源的蒸镀源开口(61)排出的蒸镀颗粒(91)通过相邻的限制板之间通过形成在蒸镀掩模中的掩模开口(71),并附着在基板上, (90)。 限制板限制了进入掩模开口的气相沉积颗粒的入射角,如在基板的相对移动方向上所看到的。 以这种方式,可以在大尺寸基板上形成有机EL元件,而不增加像素间距或降低开口率。

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