Abstract:
A polishing apparatus includes a platen to hold a polishing pad having a plurality of optical apertures, a carrier head to hold a substrate against the polishing pad, a motor to generate relative motion between the carrier head and the platen, and an optical monitoring system. The optical monitoring system includes at least one light source, a common detector, and an optical assembly configured to direct light from the at least one light source to each of a plurality of separated positions in the platen, to direct light from each position of the plurality of separated positions to the substrate as the substrate passes over said each position, to receive reflected light from the substrate as the substrate passes over said each position, and to direct the reflected light from each of the plurality of separated positions to the common detector.
Abstract:
Methods, systems, and apparatus for spectrographic monitoring of a substrate during chemical mechanical polishing are described. In one aspect, a computer-implemented method includes storing a library having a plurality of reference spectra, each reference spectrum of the plurality of reference spectra having a stored associated index value, measuring a sequence of spectra in-situ during polishing to obtain measured spectra, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, determining the associated index value for each best matching spectrum from the sequence of best matching reference spectra to generate a sequence of index values, fitting a linear function to the sequence of index values, and halting the polishing either when the linear function matches or exceeds a target index or when the associated index value from the determining step matches or exceeds the target index.
Abstract:
A computer implemented method of monitoring a polishing process includes, for each sweep of a plurality of sweeps of an optical sensor across a substrate undergoing polishing, obtaining a plurality of current spectra, each current spectrum of the plurality of current spectra being a spectrum resulting from reflection of white light from the substrate, for each sweep of the plurality of sweeps, determining a difference between each current spectrum and each reference spectrum of a plurality of reference spectra to generate a plurality of differences, for each sweep of the plurality of sweeps, determining a smallest difference of the plurality of differences, thus generating a sequence of smallest difference, and determining a polishing endpoint based on the sequence of smallest differences.
Abstract:
A method of controlling a polishing operation includes measuring a plurality of spectra at a plurality of different positions on a substrate to provide a plurality of measured spectra. For each measured spectrum of the plurality of measured spectra, a characterizing value is generated based on the measured spectrum. For each characterizing value, a goodness of fit of the measured spectrum to another spectrum used in generating the characterizing value is determined. A wafer-level characterizing value map is generated by applying a regression to the plurality of characterizing values with the plurality of goodnesses of fit used as weighting factors in the regression. A polishing endpoint or a polishing parameter of the polishing apparatus is adjusted based on the wafer-level characterizing map, and the substrate or a subsequent substrate is polished in the polishing apparatus with the adjusted polishing endpoint or polishing parameter.
Abstract:
A polishing apparatus includes a plurality of stations supported on a platform, the plurality of stations including at least two polishing stations and a transfer station, each polishing station including a platen to support a polishing pad, a plurality of carrier heads suspended from and movable along a track such that each polishing station is selectively positionable at the stations, and a controller configured to control motion of the carrier heads along the track such that during polishing at each polishing station only a single carrier head is positioned in the polishing station.
Abstract:
A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the current parameters and the target parameters have a pre defined relationship.
Abstract:
Methods of determining a polishing endpoint are described using spectra obtained during a polishing sequence. In particular, techniques for using only desired spectra, faster searching methods and more robust rate determination methods are described.
Abstract:
A method of classification of a film non-uniformity on a substrate includes obtaining a color image of a substrate with the color image comprising a plurality of color channels, obtaining a standard color for the color image of the substrate, for each respective pixel along a path in the color image determining a difference vector between the a color of the respective pixel and the standard color to generate a sequence of difference vectors, sorting the pixels along the path into a plurality of regions including at least one normal region and at least one abnormal region based on the sequence of difference vectors, and classifying the at least one abnormal region as overpolished or underpolished based on at least one difference vector of a pixel at a boundary between the abnormal region and an adjacent normal region.
Abstract:
A chemical mechanical polishing system includes a support configured to hold a substrate face-up, a polishing article having a polishing surface smaller than an exposed surface of the substrate, a port for dispensing a polishing liquid, one or more actuators to bring the polishing surface into contact with a first portion of the exposed surface of the substrate and to generate relative motion between the substrate and the polishing pad and optically transmissive polymer window, an in-situ optical monitoring system, and a controller configured to receive a signal from the optical in-situ monitoring system and to modifying a polishing parameter based on the signal. The optical monitoring system includes a light source and a detector, the in-situ optical monitoring system configured to direct a light beam from above the support to impinge a non-overlapping second portion of the exposed surface of the substrate.
Abstract:
A chemical mechanical polishing apparatus includes a platen supporting a polishing pad, a carrier head to hold a surface of a substrate against the polishing pad, an acoustic sensor supported on the platen, and a motor to generate relative motion between the platen and the carrier head so as to polish the substrate. The carrier head includes a retaining ring for holding the substrate, and the acoustic sensor travels in a path below the carrier head and the retaining ring. A controller is configured to analyze a signal from the acoustic sensor and determine a characteristic of the retaining ring based on the signal.