公开(公告)号：US20210159158A1

公开(公告)日：2021-05-27

申请号：US16698680

申请日：2019-11-27

Applicant: Applied Materials, Inc.

Inventor： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Giback PARK ,  Kyuil CHO ,  Kurtis LESCHKIES ,  Roman GOUK ,  Chintan BUCH ,  Vincent DICAPRIO

IPC: H01L23/498 ,  H01L23/14 ,  H01L21/48

Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

公开(公告)号：US20190237345A1

公开(公告)日：2019-08-01

申请号：US16378140

申请日：2019-04-08

Applicant: Applied Materials, Inc.

Inventor： Jean DELMAS ,  Steven VERHAVERBEKE ,  Kurtis LESCHKIES

IPC: H01L21/67 ,  H01L21/677 ,  F27B9/36 ,  H01L21/324

CPC classification number: H01L21/67109 ,  F27B9/36 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/67748 ,  H01L21/67754

Abstract: Embodiments of the disclosure relate to an apparatus and method for annealing one or more semiconductor substrates. In one embodiment, a processing chamber is disclosed. The processing chamber includes a chamber body enclosing an internal volume, a substrate support disposed in the internal volume and configured to support a substrate during processing, a gas panel configured to provide a processing fluid into the internal volume, and a temperature-controlled fluid circuit configured to maintain the processing fluid at a temperature above a condensation point of the processing fluid. The temperature-controlled fluid circuit includes a gas conduit fluidly coupled to a port on the chamber body at a first end and to the gas panel at a second end.

公开(公告)号：US20190189435A1

公开(公告)日：2019-06-20

申请号：US16201095

申请日：2018-11-27

Applicant: Applied Materials, Inc.

Inventor： Shishi JIANG ,  Kurtis LESCHKIES ,  Pramit MANNA ,  Abhijit Basu MALLICK ,  Steven VERHAVERBEKE

IPC: H01L21/02 ,  C23C8/10

Abstract: Implementations described herein generally relate to methods for forming a low-k dielectric material on a semiconductor substrate. More specifically, implementations described herein relate to methods of forming a silicon oxide film at high pressure and low temperatures. In one implementation, a method of forming a silicon oxide film is provided. The method comprises loading a substrate having a silicon-containing film formed thereon into a processing region of a high-pressure vessel. The method further comprises forming a silicon oxide film on the silicon-containing film. Forming the silicon oxide film on the silicon-containing film comprises exposing the silicon-containing film to a processing gas comprising steam at a pressure greater than about 1 bar and maintaining the high-pressure vessel at a temperature between about 100 degrees Celsius and about 500 degrees Celsius.

公开(公告)号：US20190018189A1

公开(公告)日：2019-01-17

申请号：US15647348

申请日：2017-07-12

Applicant: Applied Materials, Inc.

Inventor： Rutger MEYER TIMMERMAN THIJSSEN ,  Steven VERHAVERBEKE ,  Joseph R. JOHNSON

IPC: G02B6/122 ,  G02B6/136

Abstract: Embodiments described herein generally relate to a wave guide and a method of creating a wave guide. In one embodiment, a method of forming a wave guide is disclosed herein. An inverse master substrate having a plurality of projections extending therefrom is formed. A high refractive index material is formed on a top surface of the inverse master substrate. A glass layer is positioned on a top surface of the high refractive index material. The inverse master substrate is removed from the high refractive index material.

公开(公告)号：US20180350593A1

公开(公告)日：2018-12-06

申请号：US16039224

申请日：2018-07-18

Applicant: Applied Materials, Inc.

Inventor： Roman GOUK ,  Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Jean DELMAS

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/67

Abstract: A substrate support apparatus is provided. The apparatus includes a circular base plate and one or more spacers disposed about a circumference of the base plate. The spacers may extend from a top surface of the base plate and a ring body may be coupled to the spacers. The ring body may be spaced from the base plate to define apertures between the base plate and the ring body. One or more support posts may be coupled to the base plate and extend therefrom. The support posts may be coupled to the base plate at positions radially inward from an inner surface of the ring body.

公开(公告)号：US20180323063A1

公开(公告)日：2018-11-08

申请号：US15586208

申请日：2017-05-03

Applicant: Applied Materials, Inc.

Inventor： Jean DELMAS ,  Steven VERHAVERBEKE

IPC: H01L21/02 ,  H01L21/67 ,  B08B7/00 ,  F25J3/02

CPC classification number: H01L21/02101 ,  B08B7/0021 ,  F25J3/0266 ,  F25J2220/02 ,  H01L21/67023

Abstract: A method and apparatus for processing a substrate is provided. A feed stream of carbon dioxide liquid is supplied under pressure from a feed supply to a purification vessel. The carbon dioxide liquid in the purification vessel is distilled to form a purified carbon dioxide gas in a single stage distillation process. The processing method includes condensing the purified carbon dioxide gas in the condenser by heat exchange with a refrigerant from a refrigeration system to form a purified carbon dioxide liquid. The purified carbon dioxide liquid is heated to a target temperature above a critical point to change the purified carbon dioxide liquid to a supercritical carbon dioxide fluid. The processing method includes using the supercritical carbon dioxide fluid to clean a substrate disposed in a processing chamber.

公开(公告)号：US20160133515A1

公开(公告)日：2016-05-12

申请号：US14896854

申请日：2014-05-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Roman GOUK ,  Steven VERHAVERBEKE

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  C23C18/1653 ,  C23C18/34 ,  C25D3/38 ,  C25D3/40 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76847 ,  H01L21/76898

Abstract: A method and apparatus for processing a substrate are provided. In some implementations, the method comprises providing a silicon substrate having an aperture containing an exposed silicon contact surface at a bottom of the aperture, depositing a metal seed layer on the exposed silicon contact surface and exposing the substrate to an electroplating process by flowing a current through a backside of the substrate to form a metal layer on the metal seed layer.

Abstract translation: 提供了一种用于处理衬底的方法和设备。 在一些实施方式中，该方法包括提供硅衬底，该硅衬底具有在孔的底部包含暴露的硅接触表面的孔，在暴露的硅接触表面上沉积金属晶种层，并通过流过电流来将衬底暴露于电镀工艺 通过衬底的背面以在金属种子层上形成金属层。

公开(公告)号：US20140264354A1

公开(公告)日：2014-09-18

申请号：US14203433

申请日：2014-03-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Kurtis LESCHKIES ,  Steven VERHAVERBEKE ,  Robert VISSER ,  John M. WHITE ,  Yan YE ,  Dong-Kil YIM

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/4908

Abstract: The present invention generally relates to a thin film semiconductor device having a buffer layer formed between the semiconductor layer and one or more layers. In one embodiment, a thin film semiconductor device includes a semiconductor layer having a first work function and a first electron affinity level, a buffer layer having a second work function greater than the first work function and a second electron affinity level that is less than the first electron affinity level; and a gate dielectric layer having a third work function less than the second work function and a third electron affinity level that is greater than the second electron affinity level.

Abstract translation: 本发明一般涉及一种在半导体层与一层或多层之间形成缓冲层的薄膜半导体器件。 在一个实施例中，薄膜半导体器件包括具有第一功函数和第一电子亲和度的半导体层，具有大于第一功函数的第二功函数的缓冲层和小于第一功函数的第二电子亲和度 第一电子亲和力水平; 以及具有小于第二功函数的第三功函数和大于第二电子亲和度的第三电子亲和度的栅介质层。

公开(公告)号：US20140017518A1

公开(公告)日：2014-01-16

申请号：US14029248

申请日：2013-09-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Steven VERHAVERBEKE ,  Omkaram NALAMASU ,  Majeed A. FOAD ,  Mahalingam VENKATESAN ,  Nety M. KRISHNA

IPC: G11B5/84

CPC classification number: G11B5/84 ,  C23C14/185 ,  C23C14/48 ,  C23C14/5826 ,  C23C14/5833 ,  G11B5/855 ,  H01J2237/3365

Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.

Abstract translation: 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。

公开(公告)号：US20130102110A1

公开(公告)日：2013-04-25

申请号：US13656485

申请日：2012-10-19

Applicant: Applied Materials, Inc.

Inventor： Kurtis LESCHKIES ,  Steven VERHAVERBEKE ,  Robert VISSER

IPC: H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/03921 ,  Y02E10/50

Abstract: The present invention generally includes an apparatus and process of forming a conductive layer on a surface of a host substrate, which can be directly used to form a portion of an electronic device. More specifically, one or more of the embodiments disclosed herein include a process of forming a conductive layer on a surface of a substrate using an electrospinning type deposition process. Embodiments of the conductive layer forming process described herein can be used to reduce the number of processing steps required to form the conductive layer, improve the electrical properties of the formed conductive layer and reduce the conductive layer formation process complexity over current state-of-the-art conductive layer formation techniques. Typical electronic device formation processes that can benefit from one or more of the embodiments described herein include, but are not limited to processes used to form solar cells, electronic visual display devices and touchscreen type technologies.

Abstract translation: 本发明通常包括在主基板的表面上形成导电层的装置和工艺，其可以直接用于形成电子器件的一部分。 更具体地，本文公开的一个或多个实施例包括使用静电纺丝型沉积工艺在基板的表面上形成导电层的工艺。 本文所述的导电层形成方法的实施方案可用于减少形成导电层所需的处理步骤的数量，改善所形成的导电层的电性能，并降低导电层形成工艺的复杂性，超过目前的状态 - 导电层形成技术。 可以受益于本文所述的一个或多个实施方案的典型的电子器件形成方法包括但不限于用于形成太阳能电池的方法，电子视觉显示装置和触摸屏型技术。