公开(公告)号：US20070000330A1

公开(公告)日：2007-01-04

申请号：US11516237

申请日：2006-09-06

申请人： Steven Tysoe ,  Mark D'Evelyn ,  Charles Becker ,  Abasifreke Ebong ,  Stephen Arthur ,  Steven LeBoeuf ,  Robert Wojnarowski ,  Samhita Dasgupta ,  Vinayak Tilak ,  Kanakasabapathi Subramanian ,  Jeffrey Fortin

发明人： Steven Tysoe ,  Mark D'Evelyn ,  Charles Becker ,  Abasifreke Ebong ,  Stephen Arthur ,  Steven LeBoeuf ,  Robert Wojnarowski ,  Samhita Dasgupta ,  Vinayak Tilak ,  Kanakasabapathi Subramanian ,  Jeffrey Fortin

IPC分类号： G01L7/00

CPC分类号： H01L21/31111

摘要： A pressure sensor is provided. The pressure sensor includes a multi-layer laminate comprising a substrate and a semiconductor layer, wherein the substrate comprises single crystal or quasi-single crystal aluminum oxide, and a portion of the substrate that is spaced from a peripheral edge is wet etched to form an inwardly facing sidewall that defines a volume; and a substrate to which the multi-layer laminate is secured. The volume is an enclosed volume further defined by a substrate surface.

摘要翻译： 提供压力传感器。 压力传感器包括多层层压体，其包括基底和半导体层，其中基底包括单晶或准单晶氧化铝，并且与周边边缘间隔开的部分基底被湿蚀刻以形成 限定体积的面向内的侧壁; 以及固定有多层层叠体的基板。 体积是由衬底表面进一步限定的封闭体积。

公开(公告)号：US20060118920A1

公开(公告)日：2006-06-08

申请号：US11337249

申请日：2006-01-23

申请人： Kanakasabapathi Subramanian ,  Jeffrey Fortin ,  Wei-Cheng Tian

发明人： Kanakasabapathi Subramanian ,  Jeffrey Fortin ,  Wei-Cheng Tian

IPC分类号： H01L29/04 ,  H01L23/48 ,  H01L29/06

CPC分类号： H01L21/30617 ,  H01L21/76898 ,  H01L23/481 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming smooth walled, prismatically-profiled through-wafer vias and articles formed through the method. An etch stop material is provided on a wafer, which may be a silicon wafer. A mask material is provided on the etch stop material and patterned in such a way as to lead to the formation of vias that have at least one pair of opposing side walls that run parallel to a plane in the wafer. A wet etchant, such as potassium hydroxide, is used to etch vias in the wafer. The use of a wet etchant leads to the formation of smooth side walls. This method allows an aspect ratio of height versus width of the vias of greater than 75 to 1.

公开(公告)号：US20050199069A1

公开(公告)日：2005-09-15

申请号：US10799053

申请日：2004-03-12

申请人： Jeffrey Fortin ,  Kuna Kishore ,  Kanakasabapathi Subramanian

发明人： Jeffrey Fortin ,  Kuna Kishore ,  Kanakasabapathi Subramanian

IPC分类号： G01L1/14 ,  G01L9/00 ,  G01M9/00

CPC分类号： G01L1/148 ,  G01L9/0073

摘要： According to some embodiments, an apparatus includes a substrate that defines a plane. The apparatus also includes a first conducting plate that is substantially normal to the substrate and a second conducting plate that is (i) substantially normal to the substrate and (ii) deformable in response to a pressure.

摘要翻译： 根据一些实施例，一种装置包括限定平面的基板。 该设备还包括基本上垂直于衬底的第一导电板和第二导电板，其是（i）基本上垂直于衬底和（ii）响应于压力而变形的。

公开(公告)号：US08916995B2

公开(公告)日：2014-12-23

申请号：US12629309

申请日：2009-12-02

申请人： Lincoln Mamoru Fujita ,  Kanakasabapathi Subramanian

发明人： Lincoln Mamoru Fujita ,  Kanakasabapathi Subramanian

IPC分类号： H02H3/00 ,  G01D4/00 ,  H01H1/00 ,  H01H59/00

CPC分类号： G01D4/004 ,  H01H1/0036 ,  H01H59/0009 ,  Y02B90/242 ,  Y02B90/244 ,  Y04S20/322 ,  Y04S20/327 ,  Y10T307/74 ,  Y10T307/832 ,  Y10T307/865

摘要： A current control device is described. The current control device includes at least one line socket configured to couple to a first power system. The current control device also includes at least one load socket configured to couple to a second power system and at least one micro-electromechanical system (MEMS) switching device coupled between the at least one line socket and the at least one load socket. The at least one MEMS switching device is configured to selectably couple the first power system to the second power system.

摘要翻译： 描述电流控制装置。 电流控制装置包括配置成耦合到第一电力系统的至少一个线路插座。 电流控制装置还包括配置成耦合到第二电力系统的至少一个负载插座和耦合在所述至少一个线路插座和所述至少一个负载插座之间的至少一个微机电系统（MEMS）开关装置。 所述至少一个MEMS开关装置被配置为将所述第一电力系统可选择地耦合到所述第二电力系统。

公开(公告)号：US08610519B2

公开(公告)日：2013-12-17

申请号：US11961737

申请日：2007-12-20

申请人： Christopher Fred Keimel ,  Xuefeng Wang ,  Marco Francesco Aimi ,  Kanakasabapathi Subramanian

发明人： Christopher Fred Keimel ,  Xuefeng Wang ,  Marco Francesco Aimi ,  Kanakasabapathi Subramanian

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H9/40 ,  H01H2001/0084 ,  H01H2057/006

摘要： In accordance with one aspect of the present invention, a MEMS switch is provided. The MEMS switch includes a substrate, a first and a second actuating element electrically coupled together, an anchor mechanically coupled to the substrate and supporting at least one of the first and second actuating elements, and a gate driver configured to actuate the first and second actuating elements.

摘要翻译： 根据本发明的一个方面，提供一种MEMS开关。 MEMS开关包括基板，电耦合在一起的第一和第二致动元件，机械耦合到基板并支撑第一和第二致动元件中的至少一个的锚固件，以及配置成致动第一和第二致动元件的栅极驱动器 元素。

公开(公告)号：US20110005910A1

公开(公告)日：2011-01-13

申请号：US12500212

申请日：2009-07-09

申请人： Lincoln Mamoru Fujita ,  Kanakasabapathi Subramanian

发明人： Lincoln Mamoru Fujita ,  Kanakasabapathi Subramanian

IPC分类号： H01H13/72

CPC分类号： H01H9/0011 ,  H01H59/0009

摘要： An on-load tap changer (OLTC) for a transformer winding is disclosed. The OLTC includes a first MEMS switch coupled in series with a first tap on the transformer winding and a neutral terminal. The OLTC also includes a second MEMS switch coupled in series with a second tap on the transformer winding and the neutral terminal. The OLTC further includes a controller coupled to the first MEMS switch and the second MEMS switch, the controller configured to coordinate the switching operations of the first MEMS switch module and the second MEMS switch module to obtain a first predetermined turns ratio or a second predetermined turns ratio for the transformer winding.

摘要翻译： 公开了一种用于变压器绕组的有载分接开关（OLTC）。 OLTC包括与变压器绕组上的第一抽头和中性端子串联耦合的第一MEMS开关。 OLTC还包括与变压器绕组和中性端子上的第二抽头串联耦合的第二MEMS开关。 OLTC还包括耦合到第一MEMS开关和第二MEMS开关的控制器，该控制器被配置成协调第一MEMS开关模块和第二MEMS开关模块的开关操作，以获得第一预定匝数比或第二预定匝数 变压器绕组的比例。

公开(公告)号：US07808764B2

公开(公告)日：2010-10-05

申请号：US11931353

申请日：2007-10-31

申请人： Kathleen Ann O'Brien ,  Kanakasabapathi Subramanian ,  Nicole Christine Reeves Hedges ,  Michael Solomon Idelchik ,  Owen Jannis Schelenz

发明人： Kathleen Ann O'Brien ,  Kanakasabapathi Subramanian ,  Nicole Christine Reeves Hedges ,  Michael Solomon Idelchik ,  Owen Jannis Schelenz

IPC分类号： H01H47/00

CPC分类号： H01H59/0009 ,  H01H2059/0018 ,  H01H2071/008

摘要： A system that includes micro-electromechanical system switching circuitry, such as may be made up of a plurality of micro-electromechanical switches, is provided. The plurality of micro-electromechanical switches may generally operate in a closed switching condition during system operation. A controller is coupled to the electromechanical switching circuitry. The controller may be configured to actuate at least one of the micro-electromechanical switches to a temporary open switching condition while a remainder of micro-electromechanical switches remains in the closed switching condition to conduct a load current and avoid interrupting system operation. The temporary open switching condition of the switch is useful to avoid a tendency of switch contacts to stick to one another.

摘要翻译： 提供了一种包括诸如可由多个微机电开关组成的微机电系统切换电路的系统。 在系统操作期间，多个微机电开关通常可以在闭合的开关状态下工作。 控制器耦合到机电开关电路。 控制器可以被配置为致动微机电开关中的至少一个到临时开路切换状态，而其余的微机电开关保持在闭合开关状态以进行负载电流并避免中断系统操作。 交换机的暂时开放切换条件对于避免开关触点彼此粘合的趋势是有用的。

公开(公告)号：US07527742B2

公开(公告)日：2009-05-05

申请号：US11167719

申请日：2005-06-27

申请人： Steven Alfred Tysoe ,  Steven Francis LeBoeuf ,  Mark Philip D'Evelyn ,  Venkat Subramaniam Venkataramani ,  Vinayak Tilak ,  Jeffrey Bernard Fortin ,  Charles Adrian Becker ,  Stephen Daley Arthur ,  Samhita Dasgupta ,  Kanakasabapathi Subramanian ,  Robert John Wojnarowski ,  Abasifreke Udo Ebong

发明人： Steven Alfred Tysoe ,  Steven Francis LeBoeuf ,  Mark Philip D'Evelyn ,  Venkat Subramaniam Venkataramani ,  Vinayak Tilak ,  Jeffrey Bernard Fortin ,  Charles Adrian Becker ,  Stephen Daley Arthur ,  Samhita Dasgupta ,  Kanakasabapathi Subramanian ,  Robert John Wojnarowski ,  Abasifreke Udo Ebong

IPC分类号： C03C15/00 ,  C03C25/68

CPC分类号： H01L21/31111

摘要： An etchant including a halogenated salt, such as Cryolite (Na3AlF6) or potassium tetrafluoro borate (KBF4), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (Na3AlF6), potassium tetrafluoro borate (KBF4), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.

摘要翻译： 提供包括卤化盐的蚀刻剂，例如冰晶石（Na 3 AlF 6）或四氟硼酸钾（KBF 4）。 盐可以以足以蚀刻基材的量存在于蚀刻剂中，并且可以具有大于约200摄氏度的熔体温度。 湿蚀刻的方法可以包括使蚀刻剂与多层层压体的支撑层的至少一个表面接触，其中所述支撑层可以包括氧化铝; 或使蚀刻剂与多层层压体的支撑层的至少一个表面接触，其中所述蚀刻剂可以包括冰晶石（Na 3 AlF 6），四氟硼酸钾（KBF 4）或两者; 并蚀刻所述支撑层的至少一部分。 该方法可以提供通过将结晶生长到氧化铝载体层上并通过湿蚀刻化学去除至少一部分载体层而制备的层压体。 提供了包括层压板的电子设备，光学设备或组合设备。

公开(公告)号：US20080190748A1

公开(公告)日：2008-08-14

申请号：US11674189

申请日：2007-02-13

申请人： Stephen Daley Arthur ,  Ahmed Elasser ,  Joshua Isaac Wright ,  Kanakasabapathi Subramanian ,  Christopher Fred Keimel ,  Arun Virupaksha Gowda

发明人： Stephen Daley Arthur ,  Ahmed Elasser ,  Joshua Isaac Wright ,  Kanakasabapathi Subramanian ,  Christopher Fred Keimel ,  Arun Virupaksha Gowda

IPC分类号： H01H57/00 ,  H01H11/00

CPC分类号： H01H59/0009 ,  H01H9/52 ,  H01L24/24 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92144 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  Y10T29/49105 ,  H01L2924/00

摘要： One embodiment of the invention comprises a MEMS structure further comprising: a MEMS device (240) having a first surface with one or more contact structures (244, 245 and 246) thereon connected to functional elements of the MEMS device (240), a dielectric layer (100) overlying the first surface defining openings therein through which the contact structures (244, 245 and 246) are exposed, a patterned metallization layer (254, 255 and 256) comprising conductive material extending from the contact structures (244, 245 and 246) through the openings in the dielectric layer (100) and onto a surface of the dielectric layer and a first heat sink (190) in thermal communication with the metallization layer (254, 255 and 256).

摘要翻译： 本发明的一个实施例包括一种MEMS结构，其进一步包括：MEMS器件（240），其具有其上连接到所述MEMS器件（240）的功能元件的一个或多个接触结构（244,245和246）的第一表面， 覆盖所述第一表面的层（100），所述第一表面限定其中所述接触结构（244,245和246）暴露于其中的开口;图案化金属化层（254,255和256），包括从所述接触结构（244,245和255）延伸的导电材料 246）通过介电层（100）中的开口并延伸到电介质层的表面上，以及与金属化层（254,255和256）热连通的第一散热器（190）。

公开(公告)号：US07101789B2

公开(公告)日：2006-09-05

申请号：US10938247

申请日：2004-09-13

申请人： Kanakasabapathi Subramanian ,  Jeffrey Bernard Fortin ,  Wei-Cheng Tian

发明人： Kanakasabapathi Subramanian ,  Jeffrey Bernard Fortin ,  Wei-Cheng Tian

IPC分类号： H01L21/44

CPC分类号： H01L21/30617 ,  H01L21/76898 ,  H01L23/481 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming smooth walled, prismatically-profiled through-wafer vias and articles formed through the method. An etch stop material is provided on a wafer, which may be a silicon wafer. A mask material is provided on the etch stop material and patterned in such a way as to lead to the formation of vias that have at least one pair of opposing side walls that run parallel to a plane in the wafer. A wet etchant, such as potassium hydroxide, is used to etch vias in the wafer. The use of a wet etchant leads to the formation of smooth side walls. This method allows an aspect ratio of height versus width of the vias of greater than 75 to 1.