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61.发明申请公开(公告)号：US20180130795A1
公开(公告)日：2018-05-10
申请号：US15865774
申请日：2018-01-09
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Nevada J. Sanchez , Susan A. Alie
IPC: H01L27/06 , H01L27/092 , A61B8/00 , B06B1/02 , B81B3/00 , H01L23/528 , H01L23/522 , H01L21/8238 , H01L21/768 , H01L21/56 , H01L21/3213 , B81C1/00 , B81B7/00
CPC classification number: H01L27/0617 , A61B8/00 , A61B8/4494 , B06B1/02 , B06B1/0292 , B06B2201/51 , B81B3/0021 , B81B7/0006 , B81B2201/0271 , B81C1/00158 , B81C1/00246 , B81C2203/0735 , B81C2203/0771 , H01L21/32134 , H01L21/56 , H01L21/768 , H01L21/76838 , H01L21/823871 , H01L23/5226 , H01L23/528 , H01L27/0688 , H01L27/092 , H01L2224/16225
Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
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62.发明授权公开(公告)号：US09944514B2
公开(公告)日：2018-04-17
申请号：US15626801
申请日：2017-06-19
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC classification number: B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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公开(公告)号：US09910018B2
公开(公告)日：2018-03-06
申请号：US15177977
申请日：2016-06-09
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Susan A. Alie , Keith G. Fife , Nevada J. Sanchez , Tyler S. Ralston
CPC classification number: G01N29/2406 , A61B8/4483 , B06B1/0292 , B81B7/007 , B81B2201/0271 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/036 , B81C2203/0792 , H01L2224/4813 , H01L2924/0002 , H01L2924/146 , H01L2924/1461
Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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公开(公告)号：US09910017B2
公开(公告)日：2018-03-06
申请号：US15177899
申请日：2016-06-09
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Susan A. Alie , Keith G. Fife , Nevada J. Sanchez , Tyler S. Ralston
CPC classification number: G01N29/2406 , A61B8/4483 , B06B1/0292 , B81B7/007 , B81B2201/0271 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/036 , B81C2203/0792 , H01L2224/4813 , H01L2924/0002 , H01L2924/146 , H01L2924/1461
Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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公开(公告)号：US20180003678A1
公开(公告)日：2018-01-04
申请号：US15689863
申请日：2017-08-29
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Susan A. Alie , Keith G. Fife , Nevada J. Sanchez , Tyler S. Ralston
CPC classification number: G01N29/2406 , A61B8/4483 , B06B1/0292 , B81B7/007 , B81B2201/0271 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/036 , B81C2203/0792 , H01L2224/4813 , H01L2924/0002 , H01L2924/146 , H01L2924/1461
Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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Patent Agency Ranking
公开(公告)号：US20170225196A1
公开(公告)日：2017-08-10
申请号：US15581511
申请日：2017-04-28
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC classification number: B06B1/02 , B06B1/0292 , B81B3/0021 , B81B7/0077 , B81B2203/0127 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C2201/013 , B81C2203/0118 , B81C2203/0735 , B81C2203/0771 , G10K9/12 , G10K11/18
Abstract: CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
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公开(公告)号：US20170163225A1
公开(公告)日：2017-06-08
申请号：US14957395
申请日：2015-12-02
Applicant: Butterfly Network, Inc.
Inventor： Kailiang Chen , Keith G. Fife , Nevada J. Sanchez , Andrew J. Casper , Tyler S. Ralston
CPC classification number: H03F3/16 , A61B5/6801 , A61B8/4444 , A61B8/5207 , G01S7/52025 , H03F1/086 , H03F3/45183 , H03F2200/408 , H03F2200/555 , H03F2203/45471 , H03F2203/45504 , H03F2203/45631 , H03F2203/45634 , H03F2203/45646 , H03F2203/45648 , H03F2203/45674 , H03F2203/45686 , H03F2203/45692 , H03F2203/45726
Abstract: A variable current trans-impedance amplifier (TIA) for an ultrasound device is described. The TIA may be coupled to an ultrasonic transducer to amplify an output signal of the ultrasonic transducer representing an ultrasound signal received by the ultrasonic transducer. During acquisition of the ultrasound signal by the ultrasonic transducer, one or more current sources in the TIA may be varied.
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公开(公告)号：US09499392B2
公开(公告)日：2016-11-22
申请号：US14172383
申请日：2014-02-04
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC classification number: B06B1/0292 , B06B1/02 , B81B3/0021 , B81B2203/0127 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C2201/013 , B81C2203/0118 , B81C2203/0735 , B81C2203/0771 , G10K9/12 , G10K11/18
Abstract: CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
Abstract translation: 描述了CMOS超声波传感器及其制造方法。 所述方法可以包括在第一晶片上形成空腔并将第一晶片接合到第二晶片。 可以处理第二晶片以形成用于空腔的膜。 可以提供对腔的电接入。
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69.发明申请公开(公告)号：US20160207760A1
公开(公告)日：2016-07-21
申请号：US15042931
申请日：2016-02-12
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC classification number: B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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70.发明申请公开(公告)号：US20150084053A1
公开(公告)日：2015-03-26
申请号：US14561384
申请日：2014-12-05
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
IPC: B06B1/02
CPC classification number: B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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