公开(公告)号：US20130113073A1

公开(公告)日：2013-05-09

申请号：US13289666

申请日：2011-11-04

申请人： Chi-Wen Liu ,  Chao-Hsiung Wang

发明人： Chi-Wen Liu ,  Chao-Hsiung Wang

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L27/0629 ,  H01L23/5223 ,  H01L27/1203 ,  H01L27/1211 ,  H01L28/40 ,  H01L28/60 ,  H01L28/90 ,  H01L29/94 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit can include a MOM capacitor formed simultaneously with other devices, such as finFETs. A dielectric layer formed on a substrate has a first semiconductor fin therein and a second semiconductor fin therein. Respective top portions of the fins are removed to form respective recesses in the dielectric layer. First and second electrodes are formed in the recesses. The first and second electrodes and the interjacent dielectric layer form a MOM capacitor.

摘要翻译： 集成电路可以包括与其它器件（例如finFET）同时形成的MOM电容器。 形成在基板上的电介质层具有第一半导体鳍片和第二半导体鳍片。 除去翅片的各顶部以形成电介质层中的相应凹部。 第一和第二电极形成在凹槽中。 第一和第二电极和中间介电层形成MOM电容器。

公开(公告)号：US08383938B2

公开(公告)日：2013-02-26

申请号：US12853276

申请日：2010-08-09

申请人： Chin-Lai Lin ,  Chih-Ming Fan ,  Chi-Wen Liu

发明人： Chin-Lai Lin ,  Chih-Ming Fan ,  Chi-Wen Liu

IPC分类号： H02G3/14

CPC分类号： G06F1/181

摘要： A sliding cover faceplate and an electronic device using the same are provided. The sliding cover faceplate includes a sliding cover, a cover plate, and a sliding structure. The cover plate is provided on the electronic device, and the sliding cover is disposed on one side of the cover plate. The sliding structure includes a guiding portion and an elastic positioning portion. The guiding portion is disposed on the cover plate and is connected to the sliding cover to guide the sliding cover to slide between a first location and a second location on the cover plate. The elastic positioning portion connects the cover plate with the sliding cover to provide an elastic force to the sliding cover, such that when the sliding cover slides close to the first location or the second location, the sliding cover is automatically positioned on the first location or the second location.

摘要翻译： 提供一种滑盖面板和使用其的电子装置。 滑盖面板包括滑盖，盖板和滑动结构。 盖板设置在电子设备上，滑盖位于盖板的一侧。 滑动结构包括引导部分和弹性定位部分。 引导部分设置在盖板上并连接到滑盖上，以引导滑盖在盖板上的第一位置和第二位置之间滑动。 弹性定位部分将盖板与滑动盖连接，以向滑动盖提供弹性力，使得当滑动盖滑动靠近第一位置或第二位置时，滑动盖自动定位在第一位置或 第二个位置。

公开(公告)号：US20130034966A1

公开(公告)日：2013-02-07

申请号：US13198420

申请日：2011-08-04

申请人： Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chi-Wen Liu ,  Chin-Hsiang Lin

发明人： Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chi-Wen Liu ,  Chin-Hsiang Lin

IPC分类号： H01L21/306 ,  B05B1/00

CPC分类号： H01L21/32134 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/6708

摘要： A method of semiconductor fabrication including providing a semiconductor wafer and dispensing a first chemical spray onto the wafer using a first nozzle and dispensing a second chemical spray using a second nozzle onto the wafer. These dispensing may be performed simultaneously. The method may further include moving the first and second nozzle. The first and second nozzle may provide the first and second chemical spray having at least one different property. For example, different chemical compositions, concentrations, temperatures, angles of dispensing, or flow rate. A chemical dispersion apparatus providing two nozzles which are operable to be separately controlled is also provided.

摘要翻译： 一种半导体制造方法，包括提供半导体晶片并使用第一喷嘴将第一化学喷雾分配到晶片上，并且使用第二喷嘴将第二化学喷雾分配到晶片上。 这些分配可以同时进行。 该方法还可以包括移动第一和第二喷嘴。 第一和第二喷嘴可以提供具有至少一种不同性质的第一和第二化学喷雾。 例如，不同的化学成分，浓度，温度，分配角度或流速。 还提供了提供可分开控制的两个喷嘴的化学分散装置。

公开(公告)号：US07481910B2

公开(公告)日：2009-01-27

申请号：US10880675

申请日：2004-06-30

申请人： Hsien-Ping Feng ,  Ming-Yuang Cheng ,  Si-Kwua Cheng ,  Steven Lin ,  Jung-Chih Tsao ,  Chen-Peng Fan ,  Chi-Wen Liu

发明人： Hsien-Ping Feng ,  Ming-Yuang Cheng ,  Si-Kwua Cheng ,  Steven Lin ,  Jung-Chih Tsao ,  Chen-Peng Fan ,  Chi-Wen Liu

IPC分类号： C25D17/00 ,  B01D29/56

CPC分类号： H01L21/2885 ,  C25D21/06 ,  C25D21/18

摘要： A method of stabilizing plating film impurities in an electrochemical plating bath solution is disclosed. The method includes providing an electrochemical plating machine in which an electrochemical plating process is carried out. A by-product bath solution is formed by continually removing a pre-filtered bath solution from the machine and removing an additive from the pre-filtered bath solution. A clean bath solution is formed by removing an additive by-product from the by-product bath solution. An additive bath solution is formed by adding a fresh additive to the clean bath solution. The additive bath solution is added to the electrochemical plating machine. An apparatus for stabilizing film impurities in an electrochemical plating bath solution is also disclosed.

摘要翻译： 公开了一种在电化学镀浴溶液中稳定镀膜杂质的方法。 该方法包括提供其中进行电化学电镀处理的电化学电镀机。 通过从机器中连续除去预过滤的浴液并从预过滤的浴液中除去添加剂形成副产物浴溶液。 通过从副产物浴溶液中除去添加剂副产物形成清洁浴溶液。 通过向清洁浴溶液中加入新鲜添加剂形成添加浴溶液。 将添加浴溶液加入到电化学电镀机中。 还公开了一种用于稳定电化学镀浴溶液中的膜杂质的装置。

公开(公告)号：US20060105565A1

公开(公告)日：2006-05-18

申请号：US10987713

申请日：2004-11-12

申请人： Chi-Wen Liu ,  Hsien-Ping Feng ,  Jung-Chih Tsao

发明人： Chi-Wen Liu ,  Hsien-Ping Feng ,  Jung-Chih Tsao

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76877 ,  C25D3/38 ,  C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  H01L21/2885

摘要： The disclosure relates to a method and apparatus for enhancing copper film quality with a two-step deposition. The two step deposition may include depositing a first copper film by electrochemical plating, annealing the first copper film at a desired temperature for a duration of time to remove any impurities, depositing a second copper film and annealing the second copper film for a duration of time to remove impurities. The second copper film can be deposited by electrochemical plating without HCl/C-based additive. The second copper film can also be deposited by sputtering to avoid impurities including C, Cl and S.

摘要翻译： 本发明涉及一种通过两步沉积来提高铜膜质量的方法和装置。 两级沉积可以包括通过电化学电镀沉积第一铜膜，在所需温度下将第一铜膜退火一段时间以除去任何杂质，沉积第二铜膜并使第二铜膜退火一段时间 去除杂质。 第二个铜膜可以通过不含HCl / C基添加剂的电化学电镀沉积。 也可以通过溅射沉积第二铜膜以避免包括C，Cl和S在内的杂质。