摘要:
A method of semiconductor fabrication including providing a semiconductor wafer and dispensing a first chemical spray onto the wafer using a first nozzle and dispensing a second chemical spray using a second nozzle onto the wafer. These dispensing may be performed simultaneously. The method may further include moving the first and second nozzle. The first and second nozzle may provide the first and second chemical spray having at least one different property. For example, different chemical compositions, concentrations, temperatures, angles of dispensing, or flow rate. A chemical dispersion apparatus providing two nozzles which are operable to be separately controlled is also provided.
摘要:
A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.
摘要:
The present disclosure provides a method and apparatus for cleaning a semiconductor wafer. In an embodiment of the method, a single wafer cleaning apparatus is provided and a wafer is positioned in the apparatus. A first chemical spray is dispensed onto a front surface of the wafer. A back surface of the wafer is cleaned while dispensing the first chemical spray. The cleaning of the back surface may include a brush and spray of cleaning fluids. An apparatus operable to clean the front surface and the back surface of a single semiconductor wafer is also described.
摘要:
The present disclosure provides a method and apparatus for cleaning a semiconductor wafer. In an embodiment of the method, a single wafer cleaning apparatus is provided and a wafer is positioned in the apparatus. A first chemical spray is dispensed onto a front surface of the wafer. A back surface of the wafer is cleaned while dispensing the first chemical spray. The cleaning of the back surface may include a brush and spray of cleaning fluids. An apparatus operable to clean the front surface and the back surface of a single semiconductor wafer is also described.
摘要:
The present disclosure provides a method including providing a chamber having a first inlet and a second inlet. A solution of a de-ionized (DI) water and an acid (e.g., a dilute acid) is provided to the chamber via the first inlet. A carrier gas (e.g., N2) is provided to the chamber via the second inlet. The solution and the carrier gas are in the chamber and then from the chamber onto a single semiconductor wafer. In an embodiment, the solution includes a dilute HCl and DI water.
摘要:
A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.
摘要:
In a wafer processing method and a wafer processing system, a first property on a back side of a wafer is measured. The back side of the wafer is supported on a multi-zone chuck having a plurality of zones with controllable clamping forces. The wafer is secured to the multi-zone chuck by controlling the clamping forces in the corresponding zones in accordance with measured values of the first property in the zones.
摘要:
The present invention provides a method for forming a transistor having a stacked gate electrode structure with two gates; a lower floating gate and an upper control gate. The floating gate is formed of three polysilicon layers--undoped/doped/undoped polysilicon layers. A substrate is provided having a tunnel oxide layer 20. Then sequentially a first undoped, first doped, and second undoped polysilicon layers 22,24,26 are formed over the tunnel oxide layer thereby forming a lower floating gate layer 22, 24, 26. An intergate dielectric layer 28,30,32 is then formed over the second undoped polysilicon layer 26. Next, an upper control gate 36 and a cap oxide layer are formed over the intergate dielectric layer 28,30,32. The stacked two gate electrode structure is formed by patterning the above mentioned layers. Then spaced source and drain regions 44 are formed on opposite sides of the stacked gate structure thereby completing the transistor.
摘要:
The use of flavone derivatives of formula (I) in which R1, R2, R3, R4 and R5 independently represent hydrogen, hydroxy or an ester group; R6 represents hydrogen, hydroxy, an ester group or an O-glycoside group such as O-rhamnose, O-glucoside, O-retinoside or O-xyloside; and represents a single bond or a double bond; or the pharmaceutically acceptable salts thereof as TNFα antagonists or inhibitors.
摘要翻译:使用式(I)的黄酮衍生物,其中R 1,R 2,R 3,R 4, >和R 5独立地表示氢,羟基或酯基; R 6表示氢,羟基,酯基或O-糖苷基,例如O-鼠李糖,O-葡萄糖苷,O-鲸蜡酮或O-木糖苷; “img id =”custom-character-00001“he =”2.79mm“wi =”6.35mm“file =”US20060105967A1-20060518-P00900.TIF“alt =”custom character“img-content =”character“img- format =“tif”/>表示单键或双键; 或其药学上可接受的盐作为TNFα拮抗剂或抑制剂。
摘要:
The present invention provides a method for treating arthritic disorders, skin inflammatory disorders and pain, comprising administering to a subject an extract of Andrographis paniculata Nees, and also provides a herbal composition used therefor that comprises the extract of Andrographis paniculata Nees.