公开(公告)号：US06603160B1

公开(公告)日：2003-08-05

申请号：US09582683

申请日：2000-08-28

申请人： Hongyong Zhang

发明人： Hongyong Zhang

IPC分类号： H01L2978

CPC分类号： G02F1/13454 ,  G02F1/136213 ,  H01L27/0629 ,  H01L27/0805 ,  H01L27/1255 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/94

摘要： A MOS capacitor used in an active matrix liquid crystal display is manufactured by a process comprising the steps of forming capacitor electrodes with a dielectric layer between them in a semiconductor layer, forming a p+ diffused region and an n+ diffused region adjacent to the capacitor electrodes in the semiconductor layer, and making a complementary connection between the regions.

摘要翻译： 在有源矩阵液晶显示器中使用的MOS电容器通过以下步骤制造，该方法包括以下步骤：在半导体层中形成具有介电层的电容器电极，形成p +扩散区域和邻近电容器电极的n +扩散区域 半导体层，并且在区域之间形成互补连接。

公开(公告)号：US06538708B2

公开(公告)日：2003-03-25

申请号：US09316757

申请日：1999-05-21

申请人： Hongyong Zhang

发明人： Hongyong Zhang

IPC分类号： G02F11333

CPC分类号： G02F1/136204 ,  H01L27/12

摘要： A liquid crystal display includes a pixel cell array formed on a substrate. The pixel cell array includes rows and columns of pixel cells and each pixel cell has a pixel TFT. Gate control lines extend along the respective rows of the pixel cell array and connect the pixel TFTs to a gate control circuit. A termination unit is located near one end of the gate control lines. The termination unit is made up of antenna TFTs, respectively connected to the gate control lines. The antenna TFTs have a size which is much larger than a size of the pixel TFTs and are preferably CMOS type TFTs. The termination unit discharges a static charge which may build up on the gate control lines so that damage to the pixel TFTs caused by the static charge is prevented.

摘要翻译： 液晶显示器包括形成在基板上的像素单元阵列。 像素单元阵列包括像素单元的行和列，并且每个像素单元具有像素TFT。 栅极控制线沿着像素单元阵列的相应行延伸，并将像素TFT连接到栅极控制电路。 终端单元位于门控制线的一端附近。 终端单元由分别连接到栅极控制线的天线TFT构成。 天线TFT的尺寸远大于像素TFT的尺寸，并且优选地是CMOS型TFT。 终端单元放电可能积聚在栅极控制线上的静电荷，从而防止由静电引起的像素TFT的损坏。

公开(公告)号：US06509212B1

公开(公告)日：2003-01-21

申请号：US09236620

申请日：1999-01-26

申请人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

IPC分类号： H01L2100

CPC分类号： G02F1/13454 ,  H01L27/1285 ,  H01L27/1296 ,  Y10S148/092

摘要： A linear laser light which has an energy and is to be scanned is irradiated to a semiconductor device formed on a substrate, and then the substrate is rotated to irradiate to the semiconductor device a linear laser light which has a higher energy than that of the irradiated linear laser light and is to be scanned. Also, in a semiconductor device having an analog circuit region and a remaining circuit region wherein the analog circuit region is smaller than the remaining circuit region, a linear laser light having an irradiation area is irradiated to the analog circuit region without moving the irradiation area so as not to overlap the laser lights by scanning. On the other hand, the linear laser light to be scanned is irradiated to the remaining circuit region.

公开(公告)号：US06475839B2

公开(公告)日：2002-11-05

申请号：US09779826

申请日：2001-02-09

申请人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

IPC分类号： H01L2100

CPC分类号： H01L27/1251 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621

摘要： A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film on a semiconductor layer, forming a gate electrode on the insulating film, pattering the first insulating film into a second insulating film so that a portion of the semiconductor layer is exposed while the second insulating film has extensions which extend beyond the side edges of the gate electrode, and performing ion introduction for forming impurity regions using the gate electrode and extensions of the gate insulating film as a mask. The condition of the ion introduction is varied in order to control the regions of the semiconductor layer to be added with the impurity and the concentration of the impurity therein.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体层上形成第一绝缘膜，在绝缘膜上形成栅电极，将第一绝缘膜图案化为第二绝缘膜，以使半导体层的一部分露出 而第二绝缘膜具有延伸超过栅电极的侧边缘的延伸，并且使用栅极电极和栅极绝缘膜的延伸作为掩模来执行用于形成杂质区域的离子引入。 离子引入的条件是变化的，以便控制加入杂质的半导体层的区域和其中杂质的浓度。

公开(公告)号：US06429843B1

公开(公告)日：2002-08-06

申请号：US09736561

申请日：2000-12-12

申请人： Hongyong Zhang ,  Kenji Otsuka ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Kenji Otsuka ,  Satoshi Teramoto

IPC分类号： G09G336

CPC分类号： G09G3/3655

摘要： There is disclosed an active matrix liquid crystal display that suppresses formation of a stripe pattern on the displayed image. An active matrix circuit, a peripheral drive circuit, and A image data signal lines for supplying image data signals are all integrated on a common substrate. The liquid crystal display includes a sampling circuit to which sampling circuit input lines are connected. These sampling circuit input lines are in contact with the image data signal lines and include dummy conducting lines extending to a buffer circuit. These dummy lines average out impedances of the individual image data signal lines, thus making uniform the amounts of image data signals lost from the image data signal lines. Thus, the formation of the stripe pattern is suppressed.

摘要翻译： 公开了一种有源矩阵液晶显示器，其抑制所显示的图像上的条纹图案的形成。 用于提供图像数据信号的有源矩阵电路，外围驱动电路和A图像数据信号线都被集成在公共基板上。 液晶显示器包括采样电路，采样电路输入线连接到该采样电路。 这些采样电路输入线与图像数据信号线接触，并且包括延伸到缓冲电路的虚拟导线。 这些虚拟线将各个图像数据信号线的阻抗平均化，从而使从图像数据信号线丢失的图像数据信号的量均匀。 因此，抑制条形图案的形成。

公开(公告)号：US06421101B1

公开(公告)日：2002-07-16

申请号：US09546636

申请日：2000-04-07

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： G02F11343

CPC分类号： G02F1/136227 ,  G02F1/136209 ,  G02F1/136213

摘要： The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.

摘要翻译： 本发明提供一种具有高开口率的有源矩阵型显示装置和所需的辅助电容器。 源极线和栅极线与像素电极的一部分重叠。 该重叠区域用作黑矩阵。 此外，通过利用像素电极设置由与像素电极相同材料制成的电极图案以形成辅助电容器。 允许在不降低开口率的情况下获得所需的辅助电容值。 此外，它允许电极图案用作用于抑制源极和栅极线和像素电极之间的串扰的电屏蔽膜。

公开(公告)号：US06396470B1

公开(公告)日：2002-05-28

申请号：US09431596

申请日：1999-11-01

申请人： Hongyong Zhang ,  Noriko Uchida ,  Takatoshi Mayama ,  Tetsuya Kobayashi ,  Kazutaka Hanaoka ,  Seiji Tanuma ,  Yuichi Inoue

发明人： Hongyong Zhang ,  Noriko Uchida ,  Takatoshi Mayama ,  Tetsuya Kobayashi ,  Kazutaka Hanaoka ,  Seiji Tanuma ,  Yuichi Inoue

IPC分类号： G90G336

CPC分类号： H01L27/124 ,  G02F1/133509 ,  G02F1/13454 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0408 ,  G09G2300/0814 ,  G09G2310/0281 ,  G09G2310/0297 ,  G09G2352/00 ,  H01L27/1214

摘要： A liquid crystal display apparatus has a display section formed on a first substrate. The display section including a plurality of pixels disposed in a matrix pattern, a plurality of scan lines extending in a row direction and a plurality of signal lines extending in a column direction. One pixel is connected at each cross point between the scan and signal lines and each pixel includes a semiconductor active element and a pixel electrode. A signal line driver circuit is disposed at opposite end portions in the row direction and includes semiconductor active elements for driving the scan lines. A scan line driver circuit is disposed at opposite end portions in the column direction and includes semiconductor active elements for driving the signal lines. A transparent second substrate is disposed opposing the first substrate and a liquid crystal layer is sandwiched between the first and second substrates. An insulating black color shading film is formed on an inner surface of the second substrate and covers at least a partial area of the signal line driver circuit.

摘要翻译： 液晶显示装置具有形成在第一基板上的显示部。 显示部分包括以矩阵图案布置的多个像素，沿行方向延伸的多条扫描线和沿列方向延伸的多条信号线。 一个像素连接在扫描信号线和信号线之间的每个交叉点处，并且每个像素包括半导体有源元件和像素电极。 信号线驱动电路设置在行方向的相对端部，并且包括用于驱动扫描线的半导体有源元件。 扫描线驱动电路设置在列方向的相对端部，并且包括用于驱动信号线的半导体有源元件。 透明的第二衬底与第一衬底相对设置，并且液晶层夹在第一和第二衬底之间。 绝缘黑色遮光膜形成在第二基板的内表面上，并且覆盖信号线驱动电路的至少一部分区域。

公开(公告)号：US06358784B1

公开(公告)日：2002-03-19

申请号：US09145543

申请日：1998-09-02

申请人： Hongyong Zhang ,  Shunpei Yamazaki ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Shunpei Yamazaki ,  Yasuhiko Takemura

IPC分类号： H01L21331

CPC分类号： H01L29/66757 ,  B60R25/066 ,  H01L21/223 ,  H01L27/14692 ,  Y10T29/41

摘要： A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article. The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element, a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber, and a means to move said chamber synchronously with the laser irradiation.

摘要翻译： 一种激光加工制品的方法，包括：将待掺杂杂质的预期制品加热到不高于其熔点的温度，所述制品由选自半导体，金属，绝缘体， 及其组合; 并在包含所述杂质的反应性气体气氛中向所述制品照射激光束，从而使所述杂质物理或化学扩散到所述制品中，与之结合或侵入所述制品。 本发明还提供了一种在激光加工工艺中使用的装置，其特征在于，其具有内部样品保持器和用作样品加热装置的装置，由足够透明的材料制成的窗口， 激光束，包括真空抽出装置的腔室和用于引入含有杂质元素的反应性气体的装置，以脉冲模式操作以将激光束照射到所述腔室的激光装置，以及与所述腔室同步地移动所述腔室的装置 激光照射。

公开(公告)号：US06323071B1

公开(公告)日：2001-11-27

申请号：US09233146

申请日：1999-01-19

申请人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Takeshi Fukunaga ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Takeshi Fukunaga ,  Yasuhiko Takemura

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/1251 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757

摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

摘要翻译： 提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。 通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜 或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火， 。 通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管 晶体管，然后通过其热结晶。

公开(公告)号：US06300659B1

公开(公告)日：2001-10-09

申请号：US09459339

申请日：1999-12-13

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

IPC分类号： H01L2900

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L29/66757 ,  H01L29/78675

摘要： A thin-film transistor (TFT) which has a crystalline silicon active layer of excellent reliability and characteristics, and a method of fabricating such a TFT inexpensively are provided. In a TFT which has at least two low density impurity regions and a source/drain adjacent to a channel-forming region, catalyst elements which cause amorphous silicon to crystallize are included in the source/drain, and the density of said catalyst elements in the interface between the channel-forming region and the low-density impurity regions is less than that in the source/drain.

摘要翻译： 提供具有优异的可靠性和特性的晶体硅有源层的薄膜晶体管（TFT）以及廉价地制造这种TFT的方法。 在具有至少两个低密度杂质区域和与沟道形成区域相邻的源极/漏极的TFT中，在源极/漏极中包括引起非晶硅​​结晶的催化剂元件，并且所述催化剂元件的密度在 沟道形成区域和低浓度杂质区域之间的界面小于源极/漏极中的界面。